JPS64471B2 - - Google Patents
Info
- Publication number
- JPS64471B2 JPS64471B2 JP60074381A JP7438185A JPS64471B2 JP S64471 B2 JPS64471 B2 JP S64471B2 JP 60074381 A JP60074381 A JP 60074381A JP 7438185 A JP7438185 A JP 7438185A JP S64471 B2 JPS64471 B2 JP S64471B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- processed
- etching gas
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 description 30
- 238000001312 dry etching Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 150000001728 carbonyl compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明はドライエツチング装置に係り、特に被
処理物のエツチングを均一に行なうことを可能と
したドライエツチング装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a dry etching apparatus, and more particularly to a dry etching apparatus capable of uniformly etching a workpiece.
従来のRIE装置（反応性イオンエツチング装
置）においては、真空容器の内部に一対の平行平
板電極を配置し、上記真空容器には、エツチング
ガスのガス導入管および真空排気装置に接続され
るガス排出管が接続されており、上記一方の電極
に被処理物を固定する。そして、真空排気装置に
より真空容器内の排気を行なつた後、上記ガス導
入管により真空容器内にエツチングガスを導入
し、かつ、上記電極に高周波電力を印加してプラ
ズマを発生させ、エツチングガスをイオン化ある
いはラジカル化することにより被処理物のエツチ
ングを行なうものである。
In a conventional RIE device (reactive ion etching device), a pair of parallel plate electrodes are arranged inside a vacuum container, and the vacuum container has an etching gas inlet pipe and a gas exhaust pipe connected to a vacuum exhaust device. A tube is connected to the electrode, and the object to be treated is fixed to one of the electrodes. After evacuating the inside of the vacuum chamber using a vacuum evacuation device, etching gas is introduced into the vacuum chamber through the gas introduction tube, and high frequency power is applied to the electrodes to generate plasma. The material to be processed is etched by ionizing or radicalizing the material.
しかし、上記手段においては、エツチングガス
の圧力を１〜10Pa程度に維持してエツチングを
行なうものであるが、エツチングガスをCF4のみ
とした場合、被処理物のエツチング速度が安定せ
ず、被処理物を均一にエツチングすることができ
ないという欠点を有しており、エツチングの信頼
性を著しく低下させていた。 However, in the above method, etching is carried out by maintaining the pressure of the etching gas at about 1 to 10 Pa, but if the etching gas is only CF 4 , the etching rate of the object to be processed is unstable and This method has the disadvantage that the processed material cannot be etched uniformly, and the reliability of etching is significantly reduced.
本発明は上記した点に鑑みてなされたもので、
被処理物を均一にエツチングすることのできるド
ライエツチング装置を提供することを目的とする
ものである。
The present invention has been made in view of the above points, and
It is an object of the present invention to provide a dry etching apparatus that can uniformly etch a workpiece.
上記目的を達成するため本発明に係るドライエ
ツチング装置は、真空容器内に一対の平行平板電
極を配設し、この平行平板電極の一方に被処理物
を固定し、上記真空容器内にエツチングガスを導
入しつつ上記電極に高周波電力を印加することに
より上記被処理物のエツチングを行なうドライエ
ツチング装置において、上記エツチングガスとし
てCF4を使用するとともに、このエツチングガス
を導入する導入管の中途部にガス圧力制御装置を
介設し、このガス圧力制御装置により上記真空容
器内の圧力を350〜450Paに制御するようにした
ことを特徴とするものである。
In order to achieve the above object, a dry etching apparatus according to the present invention includes a pair of parallel plate electrodes arranged in a vacuum vessel, a workpiece to be processed is fixed to one of the parallel plate electrodes, and an etching gas is provided in the vacuum vessel. In a dry etching device that etches the object to be processed by applying high-frequency power to the electrode while introducing etching gas, CF 4 is used as the etching gas, and a part of the introduction pipe into which this etching gas is introduced is provided. The present invention is characterized in that a gas pressure control device is provided, and the pressure inside the vacuum container is controlled to 350 to 450 Pa by the gas pressure control device.
以下、本発明の実施例を第１図乃至第３図を参
照して説明する。
Embodiments of the present invention will be described below with reference to FIGS. 1 to 3.
第１図は、本発明をRIE装置に適用した場合の
一実施例を示したもので、真空容器１の内部上面
には、上部電極２が配設されるとともに、内部下
面には、絶縁部材３を介して下部電極４が配設さ
れており、上記真空容器１の上記上部電極２部分
は下方に凹まされ、上記各電極２，４間距離が３
mm以上となるようになされている。また、上記各
電極２，４の内部には、冷却水管５，５が導通さ
れており、上記下部電極４には、マツチング回路
６を介して、RF電源７が接続されている。さら
に、真空容器１には、図示しないガス導入装置か
らエツチングガスを送るガス導入管８および真空
排気装置９に接続されるガス排出管１０がそれぞ
れ接続されており、また、上記ガス導入管８の中
途部には、真空容器１の内部におけるエツチング
ガス圧力を制御するガス圧力制御装置１１が介設
されている。 FIG. 1 shows an embodiment in which the present invention is applied to an RIE apparatus, in which an upper electrode 2 is disposed on the inner upper surface of a vacuum vessel 1, and an insulating member is provided on the inner lower surface. A lower electrode 4 is disposed through the electrode 3, and the upper electrode 2 portion of the vacuum vessel 1 is recessed downward, and the distance between the electrodes 2 and 4 is 3.
mm or more. Further, cooling water pipes 5, 5 are electrically connected inside each of the electrodes 2, 4, and an RF power source 7 is connected to the lower electrode 4 via a matching circuit 6. Furthermore, a gas introduction pipe 8 for sending etching gas from a gas introduction device (not shown) and a gas exhaust pipe 10 connected to a vacuum evacuation device 9 are connected to the vacuum container 1, respectively. A gas pressure control device 11 for controlling the etching gas pressure inside the vacuum container 1 is interposed in the middle.
本実施例においては、下部電極４の上面にSi基
板上にSiO2膜を形成してなる被処理物Ａを載置
し、真空排気装置９により真空容器１内を真空し
た後、真空容器１内にガス導入管８によりエツチ
ングガスとしてのCF4を導入する。そして、ガス
圧力制御装置１１により真空容器１内のエツチン
グガス圧力を約350Pa〜450Paの高圧に維持し、
RF電源７をONにして下部電極４に高周波電力
を印加することによりプラズマ１２を発生させ、
被処理物Ａのエツチングを行なうものである。こ
のとき、冷却水管５，５に冷却水を循環させ、各
電極２，４および被処理物Ａを冷却するようにな
される。 In this embodiment, a workpiece A consisting of a SiO 2 film formed on a Si substrate is placed on the upper surface of the lower electrode 4, and after the vacuum chamber 1 is evacuated by the evacuation device 9, the vacuum chamber 1 is evacuated. CF 4 as an etching gas is introduced into the chamber through a gas introduction pipe 8. Then, the etching gas pressure in the vacuum container 1 is maintained at a high pressure of about 350 Pa to 450 Pa by the gas pressure control device 11,
Plasma 12 is generated by turning on the RF power source 7 and applying high frequency power to the lower electrode 4,
The object to be processed A is etched. At this time, cooling water is circulated through the cooling water pipes 5, 5 to cool each electrode 2, 4 and the object A to be processed.
また、第２図に示すように、本実施例のように
エツチングガス圧力を350〜450Paと高圧に制御
すると、エツチング速度は低下するがエツチング
の均一性は向上していることがわかり、また、第
３図に示すように、400Paのエツチングガス圧力
では均一性は５％以下と極めて良い値を示してい
る。 Furthermore, as shown in FIG. 2, it was found that when the etching gas pressure was controlled to a high pressure of 350 to 450 Pa as in this example, the etching speed decreased but the etching uniformity improved. As shown in FIG. 3, at an etching gas pressure of 400 Pa, the uniformity is less than 5%, which is an extremely good value.
したがつて、本実施例においては、エツチング
ガス圧力を高圧に維持することにより、エツチン
グ速度が安定し、確実に被処理物を均一にエツチ
ングすることができる。 Therefore, in this embodiment, by maintaining the etching gas pressure at a high pressure, the etching rate is stabilized and the object to be processed can be reliably etched uniformly.
本発明は上記のように、エツチングガスとして
CF4を使用するとともに、このエツチングガスを
導入する導入管の中途部にガス圧力制御装置を介
設し、このガス圧力制御装置により真空容器内の
圧力を350〜450Paに制御するようにしたので、
被処理物のエツチング速度を安定させ、被処理物
のより均一なエツチングを施すとともに、エツチ
ングガスの取扱い及び管理が比較的容易であると
いつた効果がある。
As mentioned above, the present invention uses etching gas as an etching gas.
In addition to using CF 4 , we installed a gas pressure control device in the middle of the introduction pipe that introduces this etching gas, and this gas pressure control device controls the pressure inside the vacuum container at 350 to 450 Pa. ,
The etching rate of the object to be processed is stabilized, the object to be processed is etched more uniformly, and the etching gas is relatively easy to handle and manage.
第１図乃至第３図はそれぞれ本発明の一実施例
を示したもので、第１図はRIE装置の概略構成
図、第２図はエツチング圧力とエツチング速度お
よび均一性との関係を示す線図、第３図は400Pa
の圧力下における被処理物位置とエツチング速度
との関係を示す線図である。
１……真空容器、２……上部電極、３……絶縁
部材、４……下部電極、５……冷却水管、６……
マツチング回路、７……RF電源、８……ガス導
入管、９……真空排気装置、１０……ガス排出
管、１１……ガス圧力制御装置、１２……プラズ
マ。
Figures 1 to 3 each show an embodiment of the present invention. Figure 1 is a schematic diagram of the RIE apparatus, and Figure 2 is a line showing the relationship between etching pressure, etching speed, and uniformity. Figure, Figure 3 is 400Pa
FIG. 2 is a diagram showing the relationship between the position of the object to be processed and the etching rate under pressure. DESCRIPTION OF SYMBOLS 1... Vacuum vessel, 2... Upper electrode, 3... Insulating member, 4... Lower electrode, 5... Cooling water pipe, 6...
Matching circuit, 7...RF power supply, 8...Gas introduction tube, 9...Evacuation device, 10...Gas exhaust pipe, 11...Gas pressure control device, 12...Plasma.
１ 可溶性金属陽極を電解用に使用し、かつカル
ボニル化合物の電解を、支持体電解質及び二酸化
炭素の泡をその中に吹かせる有機溶剤の存在下に
隔膜の無い電解槽中で行なうこと、及び電解に附
された溶液に、電解により得た錯体塩の沈殿を生
じる溶剤を加えて生成物を回収し、これを分離
し、加水分解して所要の酸を得ることを特徴とす
る、カルボニル化合物中に二酸化炭素の分子を挿
入することにより、α−ヒドロキシカルボン酸を
製造するための、電気カルボキシル化法。
２ 上記可溶性金属陽極をアルミニウム又は亜鉛
又はマグネシウム又はそれらの合金から作ること
を特徴とする、特許請求の範囲第１項に記載の方
法。
３ 上記支持体電解質がアルカリ又はアルカリ土
類のハロゲン化物又はアンモニウム、アルキルア
ンモニウム、シクロアルキルアンモニウム又はア
リールアンモニウムのハロゲン化物からなること
を特徴とする、特許請求の範囲第１項に記載の方
1. Using a soluble metal anode for electrolysis and carrying out the electrolysis of the carbonyl compound in an electrolytic cell without a diaphragm in the presence of a support electrolyte and an organic solvent into which bubbles of carbon dioxide are blown; in a carbonyl compound, which is characterized by adding a solvent that causes precipitation of the complex salt obtained by electrolysis to a solution attached to the solution, recovering the product, separating it, and hydrolyzing it to obtain the required acid. Electrocarboxylation method for producing alpha-hydroxycarboxylic acids by inserting a molecule of carbon dioxide into. 2. Process according to claim 1, characterized in that the soluble metal anode is made of aluminum or zinc or magnesium or alloys thereof. 3. The method according to claim 1, wherein the support electrolyte consists of an alkali or alkaline earth halide or an ammonium, alkylammonium, cycloalkylammonium or arylammonium halide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7438185A JPS61235576A (en) | 1985-04-10 | 1985-04-10 | Dry etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7438185A JPS61235576A (en) | 1985-04-10 | 1985-04-10 | Dry etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61235576A JPS61235576A (en) | 1986-10-20 |
| JPS64471B2 true JPS64471B2 (en) | 1989-01-06 |
Family
ID=13545528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7438185A Granted JPS61235576A (en) | 1985-04-10 | 1985-04-10 | Dry etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61235576A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0697676B2 (en) * | 1985-11-26 | 1994-11-30 | 忠弘 大見 | Wafer susceptor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57123978A (en) * | 1980-10-14 | 1982-08-02 | Buranson Intern Purazuma Corp | Alyminum etching method and gas mixture |
-
1985
- 1985-04-10 JP JP7438185A patent/JPS61235576A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57123978A (en) * | 1980-10-14 | 1982-08-02 | Buranson Intern Purazuma Corp | Alyminum etching method and gas mixture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61235576A (en) | 1986-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4431473A (en) | RIE Apparatus utilizing a shielded magnetron to enhance etching | |
| JPH03218627A (en) | Method and device for plasma etching | |
| JPS627272B2 (en) | ||
| Hickling et al. | Glow-discharge electrolysis. Part II. The anodic oxidation of ferrous sulphate | |
| CN111822729B (en) | Device and method for preparing high-nitrogen steel powder by plasma arc smelting | |
| US5356514A (en) | Process and apparatus for etching iron-containing materials | |
| JPS64471B2 (en) | ||
| JPS5832417A (en) | Method and apparatus for plasma etching | |
| JPS64470B2 (en) | ||
| CN114645281B (en) | Method for removing carbon film on surface of metal workpiece | |
| JPH05251400A (en) | Ito dry etching method | |
| JPS6366910B2 (en) | ||
| JPH07130712A (en) | Method for etching pt-based alloy | |
| CN217387077U (en) | Semiconductor etching equipment capable of controlling etching amount of wafer edge and adjusting device thereof | |
| JPH0677170A (en) | High-speed dry etching method | |
| JPH0228597Y2 (en) | ||
| JP2661094B2 (en) | Dry etching method | |
| JPS62286227A (en) | Dry etching apparatus | |
| JPH05166762A (en) | Etching | |
| JPS6015931A (en) | Reactive ion etching process | |
| JP2722861B2 (en) | Dry etching method and apparatus | |
| JPH02275626A (en) | Dry etching method | |
| JPH0586654B2 (en) | ||
| JPH0562935A (en) | Rapid dry-etching device | |
| JPS6039294B2 (en) | Method for producing thin polymer films on substrates |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |