JPH0244317A - Liquid crystal display device with auxiliary capacity - Google Patents

Liquid crystal display device with auxiliary capacity

Info

Publication number
JPH0244317A
JPH0244317A JP63194421A JP19442188A JPH0244317A JP H0244317 A JPH0244317 A JP H0244317A JP 63194421 A JP63194421 A JP 63194421A JP 19442188 A JP19442188 A JP 19442188A JP H0244317 A JPH0244317 A JP H0244317A
Authority
JP
Japan
Prior art keywords
auxiliary
liquid crystal
capacity
electrode
auxiliary capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63194421A
Other languages
Japanese (ja)
Inventor
Akio Mimura
三村 秋男
Takashi Suzuki
隆 鈴木
Masaru Watanabe
大 渡辺
Etsuko Kimura
木村 悦子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP63194421A priority Critical patent/JPH0244317A/en
Publication of JPH0244317A publication Critical patent/JPH0244317A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To sufficiently compensate a leak current of a switching element or a liquid crystal cell and to improve the reliability of a picture quality by constituting an auxiliary capacity by laminating plural capacities and connecting them in parallel. CONSTITUTION:As for an auxiliary capacity 5, the source side is placed in a shape that two pieces of electrodes are arranged in parallel, and a common electrode of the other side is connected by an auxiliary conductor 7, and the potential is fixed. In the auxiliary capacity 5, an auxiliary capacity use transparent electrode 10, an auxiliary capacity use insulating film 13 and an auxiliary capacity use common electrode 14 are formed, and one capacity is formed thereby. Subsequently, a layer insulating film 15 is formed, and by opening a contact window, a picture element use transparent electrode 17 is formed, and by the same material, a signal electrode 1 (drain electrode), a source electrode 16 and the auxiliary capacity use auxiliary conductor 7 are formed. In such a process, a second capacity is formed, and connected in parallel to the capacity which is embedded thereunder. In such a way, a large auxiliary capacity can be formed without increasing the number of processes, and the reliability of a picture quality of a liquid crystal display device can be raised.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は液晶表示装置の1助容量に係り、特に大きな容
量を得るのに好適な補助容量を有する液晶表示装置に関
する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an auxiliary capacitor of a liquid crystal display device, and particularly to a liquid crystal display device having an auxiliary capacitor suitable for obtaining a large capacity.

〔従来の技術〕[Conventional technology]

液晶デイスプレィは、薄型低消費電力という特徴を有し
、最近小型TVとして製品化されている。
Liquid crystal displays are characterized by being thin and low in power consumption, and have recently been commercialized as small TVs.

高精細化した場合、プロジェクタ−で投射拡大する用途
もある。この場合1強い光を使うため、光と熱でスイッ
チング素子のリーク電流が増加する。
When high definition is achieved, there is also a use for projecting and enlarging images using a projector. In this case, 1. Since strong light is used, the leakage current of the switching element increases due to the light and heat.

また、熱により、液晶の抵抗も下がる。これらの理由か
ら、印加された電圧を保持するための補助容量が不可欠
となってくる。
Heat also lowers the resistance of the liquid crystal. For these reasons, an auxiliary capacitor for holding the applied voltage becomes essential.

補助容量を形成する考え方は古いが、具体的な一例は特
開昭61−13228に述べられている。
Although the idea of forming an auxiliary capacity is old, a specific example is described in Japanese Patent Laid-Open No. 13228-1983.

第4図及び第5図において従来例を説明する。A conventional example will be explained with reference to FIGS. 4 and 5.

第4図において、信号線1及び走査線2の各交互点にス
イッチング素子3が配置されており、ソース側には液晶
セル4、補助容量5が並列に接続されている。液晶セル
4は対向基板共通電極6とで構成されている。補助容量
5の他方の共通電極は補助導体7で接続され、電位が固
定されている。
In FIG. 4, switching elements 3 are arranged at each alternating point of the signal line 1 and the scanning line 2, and a liquid crystal cell 4 and an auxiliary capacitor 5 are connected in parallel on the source side. The liquid crystal cell 4 is composed of a common electrode 6 on a counter substrate. The other common electrode of the auxiliary capacitor 5 is connected by an auxiliary conductor 7, and the potential is fixed.

第5図はスイッチング素子3及び補助容量5の部分の断
面図を示す、多結晶シリコンのゲート19と同時に、補
助容量用透明電極20を形成し、これを酸化してゲート
絶縁膜21と層間絶縁膜22を形成する。この上に再び
多結晶シリコンを形成し、信号電極1(ドレイン)、ソ
ース電極23、画素用透明電極24を形成する。こうし
て補助容量5が形成される。この例では画素用透明電極
241層間絶縁膜22.補助容量用透明電極20で一組
の容量が形成される。
FIG. 5 shows a cross-sectional view of the switching element 3 and auxiliary capacitor 5. At the same time as the polycrystalline silicon gate 19, a auxiliary capacitor transparent electrode 20 is formed, and this is oxidized to form a gate insulating film 21 and an interlayer insulator. A film 22 is formed. Polycrystalline silicon is formed again on this, and the signal electrode 1 (drain), source electrode 23, and pixel transparent electrode 24 are formed. In this way, the auxiliary capacitor 5 is formed. In this example, a pixel transparent electrode 241, an interlayer insulating film 22. A set of capacitors is formed by the transparent electrode 20 for auxiliary capacitance.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上記従来例においては、単一の容量のみで補助容量が構
成されており、特に大きな容量とする場合には、大きな
補助容量を実現できない。
In the above conventional example, the auxiliary capacitor is constituted by only a single capacitor, and a particularly large auxiliary capacitor cannot be realized when the capacitor is large.

本発明の目的は、大きな補助容量を形成する手段を提供
することにある。
An object of the present invention is to provide a means for forming a large storage capacity.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的は、複数の容量を積層して並列に接続すること
によって達成される。
The above object is achieved by stacking a plurality of capacitors and connecting them in parallel.

〔作用〕[Effect]

本発明によって形成された大きな補助容量は。 A large storage capacity is formed by the present invention.

液晶セルに並列に接続される。したがって、スイッチン
グ素子あるいは液晶セルのリーク電流を十分補償し1画
質の信頼性を高めることができる。
Connected in parallel to the liquid crystal cell. Therefore, the leakage current of the switching element or the liquid crystal cell can be sufficiently compensated for, and the reliability of one image quality can be improved.

〔実施例〕〔Example〕

以下本発明の実施例を第1図、第2図により説明する。 Embodiments of the present invention will be described below with reference to FIGS. 1 and 2.

第1図は本発明によるアクライブマトリクスの部分構成
を示す、信号線1.走査線2の交点にスイッチング素子
3が設けられており、ソース側には液晶セル4、補助容
量5が並列に接続されている。液晶セル4は対向基板共
通電極6とで構成されている。補助容量5は、ソース側
が2個の電極が並列された形で配置されており、他方の
共通電極は補助導体7で接続され、電位が固定されてい
る。
FIG. 1 shows a partial configuration of an activate matrix according to the present invention, and shows signal lines 1. A switching element 3 is provided at the intersection of the scanning lines 2, and a liquid crystal cell 4 and an auxiliary capacitor 5 are connected in parallel on the source side. The liquid crystal cell 4 is composed of a common electrode 6 on a counter substrate. The auxiliary capacitor 5 has two electrodes arranged in parallel on the source side, and the other common electrode is connected by an auxiliary conductor 7, so that the potential is fixed.

第2図はスイッチング素子3及び補助容量5の部分の断
面図を示す、ガラス基板8に多結晶シリコン9を形成す
る。この後、補助容量5を形成する部分にはリンをドー
プしておく1次にゲート絶縁膜11.ゲート電極12を
形成する。この過程で、補助容量5には、補助容量用透
明電極10、補助容量用絶縁膜13.補助容量用共通電
極14が形成され、ここで、ひとつの容量が形成される
FIG. 2 shows a cross-sectional view of the switching element 3 and auxiliary capacitor 5. Polycrystalline silicon 9 is formed on a glass substrate 8. As shown in FIG. Thereafter, the primary gate insulating film 11 is doped with phosphorus in the portion where the auxiliary capacitance 5 is to be formed. A gate electrode 12 is formed. In this process, the auxiliary capacitor 5 includes a auxiliary capacitor transparent electrode 10, an auxiliary capacitor insulating film 13. A common electrode 14 for auxiliary capacitance is formed, and one capacitance is formed here.

次に層間絶縁膜15を形成し、コンタクト窓を開けて、
画素用透明電極17を形成する。同一材料で信号電極1
(ドレイン電極)、ソース電極16、補助容量用の補助
導体7が形成される。この過程で、第2の容量が形成さ
れ、下に埋め込まれた容量と並列に接続される。このプ
ロセスで特に必要とされるのは、補助容量用透明電極1
0にドーピングするプロセスのみであり、他はスイッチ
ング素子と同一のプロセスで構成できる。
Next, an interlayer insulating film 15 is formed, a contact window is opened, and
A pixel transparent electrode 17 is formed. Signal electrode 1 made of the same material
(drain electrode), source electrode 16, and auxiliary conductor 7 for auxiliary capacitance are formed. In this process, a second capacitor is formed and connected in parallel with the underlying capacitor. What is particularly required in this process is the transparent electrode 1 for storage capacitance.
The only process required is zero doping, and the rest can be constructed using the same process as the switching element.

第3図は本発明の応用例を示す。スイッチング素子3は
正スタガー型構造である。まずガラス基板8にドープし
た多結晶シリコン又はITOを形成し、信号電極1 (
ドレイン)、ドレイン電極16、画素用透明電極10を
形成する。この」二に、能動層である薄膜半導体層18
.ゲート絶縁膜11、ゲート12を形成する。以下は第
2図に示したと同様に補助容量5を形成できる。
FIG. 3 shows an example of application of the present invention. The switching element 3 has a positive staggered structure. First, doped polycrystalline silicon or ITO is formed on the glass substrate 8, and the signal electrode 1 (
a drain), a drain electrode 16, and a transparent electrode 10 for pixels are formed. Second, the thin film semiconductor layer 18 which is an active layer.
.. A gate insulating film 11 and a gate 12 are formed. Thereafter, the auxiliary capacitor 5 can be formed in the same manner as shown in FIG.

以上の実施例では多結晶シリコンを用いるスイッチング
素子について述べたが、単結晶、非晶質膜を用いるスイ
ッチング素子についても応用できる。また透明電極材料
としては、スイッチング素子を構成する半導体層、IT
O,薄膜メタル、導電性酸化物等を任意に選択できる。
In the above embodiments, switching elements using polycrystalline silicon have been described, but the present invention can also be applied to switching elements using single crystal or amorphous films. In addition, transparent electrode materials include semiconductor layers constituting switching elements, IT
O, thin film metal, conductive oxide, etc. can be arbitrarily selected.

〔発明の効果〕 以上述べた本発明によれば、大きな補助容量を工程を増
すことなく形成でき、液晶表示装置の画質の信頼性を高
めることができる。
[Effects of the Invention] According to the present invention described above, a large auxiliary capacitor can be formed without increasing the number of steps, and the reliability of the image quality of a liquid crystal display device can be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明を説明するためのアクティブマトリクス
部分構成図、第2図及び第3図は本発明を説明するため
のスイッチング素子及び補助容量部の断面図、第4図及
び第5図はそれぞれ従来例を説明するためのアクティブ
マトリクス部分構成図及びスイッチング素子及び補助容
量部を示す図である。 3・・・スイッチング素子、5・・・補助容量、10・
・・補助容量用透明電極、13・・・補助容量用絶縁膜
、14・・・補助容量用共通電極、15・・・層間絶縁
膜、17・・・画素用透明電極。 弔 図
FIG. 1 is a partial configuration diagram of an active matrix for explaining the present invention, FIGS. 2 and 3 are cross-sectional views of a switching element and an auxiliary capacitor section for explaining the present invention, and FIGS. 4 and 5 are FIG. 2 is a partial configuration diagram of an active matrix and a diagram showing a switching element and an auxiliary capacitance section, respectively, for explaining a conventional example. 3... Switching element, 5... Auxiliary capacitor, 10.
... Transparent electrode for auxiliary capacitance, 13... Insulating film for auxiliary capacitance, 14... Common electrode for auxiliary capacitance, 15... Interlayer insulating film, 17... Transparent electrode for pixel. Funeral map

Claims (1)

【特許請求の範囲】 1、補助容量を有する液晶表示装置において、補助容量
が、積層された複数の容量を並列に接続されてなること
を特徴とする補助容量を有する液晶表示装置。 2、第1項において、液晶表示装置を駆動するスイッチ
ング素子のゲート絶縁膜から成る容量と、スイッチング
素子の保護膜から成る容量を並列に接続したことを特徴
とする補助容量を有する液晶表示装置。 3、第1項または第2項において、スイッチング素子の
ゲート電極が、補助容量の共通電極であることを特徴と
する補助容量を有する液晶表示装置。 4、第1項、第2項または第3項において、スイッチン
グ素子の能導層又はゲートと同一材料を、補助容量の透
明電極として用いたことを特徴とする補助容量を有する
液晶表示装置。
[Scope of Claims] 1. A liquid crystal display device having an auxiliary capacitor, characterized in that the auxiliary capacitor is made up of a plurality of stacked capacitors connected in parallel. 2. A liquid crystal display device having an auxiliary capacitor according to item 1, characterized in that a capacitor made of a gate insulating film of a switching element that drives the liquid crystal display device and a capacitor made of a protective film of the switching element are connected in parallel. 3. A liquid crystal display device having an auxiliary capacitor according to item 1 or 2, wherein the gate electrode of the switching element is a common electrode of the auxiliary capacitor. 4. A liquid crystal display device having an auxiliary capacitor according to item 1, 2 or 3, characterized in that the same material as the active layer or gate of the switching element is used as the transparent electrode of the auxiliary capacitor.
JP63194421A 1988-08-05 1988-08-05 Liquid crystal display device with auxiliary capacity Pending JPH0244317A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63194421A JPH0244317A (en) 1988-08-05 1988-08-05 Liquid crystal display device with auxiliary capacity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63194421A JPH0244317A (en) 1988-08-05 1988-08-05 Liquid crystal display device with auxiliary capacity

Publications (1)

Publication Number Publication Date
JPH0244317A true JPH0244317A (en) 1990-02-14

Family

ID=16324326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63194421A Pending JPH0244317A (en) 1988-08-05 1988-08-05 Liquid crystal display device with auxiliary capacity

Country Status (1)

Country Link
JP (1) JPH0244317A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03288824A (en) * 1990-04-05 1991-12-19 Sharp Corp Active matrix display device
US5208690A (en) * 1990-03-24 1993-05-04 Sony Corporation Liquid crystal display having a plurality of pixels with switching transistors
KR950019865A (en) * 1993-03-07 1995-07-24 카나이 쯔또무 LCD and its manufacturing method
WO1999028784A1 (en) * 1997-11-28 1999-06-10 Matsushita Electric Industrial Co., Ltd. Reflection-type display device and image device using reflection-type display device
JP2000284722A (en) * 1999-01-29 2000-10-13 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
US6259117B1 (en) 1994-06-02 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Active matrix display having storage capacitor associated with each pixel transistor
US6404474B1 (en) 1998-07-24 2002-06-11 Nec Corporation Horizontal electric field LCD with increased capacitance between pixel and common electrodes
JP2002182244A (en) * 2000-12-15 2002-06-26 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacturing method
US6566684B1 (en) 1994-06-13 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Active matrix circuit having a TFT with pixel electrode as auxiliary capacitor
US6825496B2 (en) 2001-01-17 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2009003187A (en) * 2007-06-21 2009-01-08 Hitachi Displays Ltd Liquid crystal display device
JP2009058913A (en) * 2007-09-04 2009-03-19 Hitachi Displays Ltd Liquid crystal display device
CN102213880A (en) * 2010-04-05 2011-10-12 精工爱普生株式会社 Electro-optical device and electronic apparatus
JP2013178523A (en) * 2013-03-25 2013-09-09 Japan Display Inc Liquid crystal display device
JP2017116959A (en) * 1999-04-27 2017-06-29 株式会社半導体エネルギー研究所 EL display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132191A (en) * 1981-02-10 1982-08-16 Suwa Seikosha Kk Active matrix substrate
JPS57205778A (en) * 1981-06-12 1982-12-16 Suwa Seikosha Kk Color liquid crystal display body
JPS5933877A (en) * 1982-08-19 1984-02-23 Seiko Epson Corp Active matrix substrate
JPS6370832A (en) * 1986-09-12 1988-03-31 Seiko Epson Corp Active matrix panel

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132191A (en) * 1981-02-10 1982-08-16 Suwa Seikosha Kk Active matrix substrate
JPS57205778A (en) * 1981-06-12 1982-12-16 Suwa Seikosha Kk Color liquid crystal display body
JPS5933877A (en) * 1982-08-19 1984-02-23 Seiko Epson Corp Active matrix substrate
JPS6370832A (en) * 1986-09-12 1988-03-31 Seiko Epson Corp Active matrix panel

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208690A (en) * 1990-03-24 1993-05-04 Sony Corporation Liquid crystal display having a plurality of pixels with switching transistors
JPH03288824A (en) * 1990-04-05 1991-12-19 Sharp Corp Active matrix display device
KR950019865A (en) * 1993-03-07 1995-07-24 카나이 쯔또무 LCD and its manufacturing method
US6495858B1 (en) 1994-06-02 2002-12-17 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device having thin film transistors
US6259117B1 (en) 1994-06-02 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Active matrix display having storage capacitor associated with each pixel transistor
US6297518B1 (en) 1994-06-02 2001-10-02 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
US7459724B2 (en) 1994-06-02 2008-12-02 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
US6885027B2 (en) 1994-06-02 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
US7148506B2 (en) 1994-06-02 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
US7479657B2 (en) 1994-06-13 2009-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including active matrix circuit
US7161178B2 (en) 1994-06-13 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Display device having a pixel electrode through a second interlayer contact hole in a wider first contact hole formed over an active region of display switch
US6566684B1 (en) 1994-06-13 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Active matrix circuit having a TFT with pixel electrode as auxiliary capacitor
WO1999028784A1 (en) * 1997-11-28 1999-06-10 Matsushita Electric Industrial Co., Ltd. Reflection-type display device and image device using reflection-type display device
US6404474B1 (en) 1998-07-24 2002-06-11 Nec Corporation Horizontal electric field LCD with increased capacitance between pixel and common electrodes
JP2000284722A (en) * 1999-01-29 2000-10-13 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
JP2017116959A (en) * 1999-04-27 2017-06-29 株式会社半導体エネルギー研究所 EL display device
JP2002182244A (en) * 2000-12-15 2002-06-26 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacturing method
US7808002B2 (en) 2001-01-17 2010-10-05 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8952385B1 (en) 2001-01-17 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US10263059B2 (en) 2001-01-17 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7242024B2 (en) 2001-01-17 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US9911801B2 (en) 2001-01-17 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6825496B2 (en) 2001-01-17 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US9679955B2 (en) 2001-01-17 2017-06-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US9324775B2 (en) 2001-01-17 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US9171896B2 (en) 2001-01-17 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2009003187A (en) * 2007-06-21 2009-01-08 Hitachi Displays Ltd Liquid crystal display device
US8253873B2 (en) 2007-09-04 2012-08-28 Hitachi Displays, Ltd. Liquid crystal display device having first, second, and third transparent electrodes that form first and second storage capacitors
US10718983B2 (en) 2007-09-04 2020-07-21 Japan Display Inc. Display device comprising a transparent counter electrode having an opening that overlaps with the opening of a first insulating film and a second insulating film
US8879036B2 (en) 2007-09-04 2014-11-04 Japan Display Inc. Liquid crystal display device comprising first and second electrodes wherein the second electrode is connected with a source electrode without passing through a first insulating film
US9261747B2 (en) 2007-09-04 2016-02-16 Japan Display Inc. Liquid crystal display device comprising a transparent pixel electrode connected with a thin film transistor through a contact hole and a transparent counter electrode having multiple slits
US11789327B2 (en) 2007-09-04 2023-10-17 Japan Display Inc. Display device comprising a metal wiring between an organic insulating film and a first inorganic insulating film and having a portion overlapping a drain electrode of a thin film transistor
US8368830B2 (en) 2007-09-04 2013-02-05 Hitachi Displays, Ltd. Liquid crystal display device having first, second, and third transparent electrodes wherein a second region of the second electrode protrudes from a first region
US11385512B2 (en) 2007-09-04 2022-07-12 Japan Display Inc. Display device comprising a metal wiring connected to a transparent counter electrode and overlapping a drain electrode of a thin film transistor
US11016351B2 (en) 2007-09-04 2021-05-25 Japan Display Inc. Liquid crystal display device comprising a transparent pixel electrode and counter electrode and an insular transparent electrode disposed between an organic insulating film and a common wiring
JP2009058913A (en) * 2007-09-04 2009-03-19 Hitachi Displays Ltd Liquid crystal display device
US10409122B2 (en) 2007-09-04 2019-09-10 Japan Display Inc. Liquid crystal display device comprising a metal wiring in contact with a counter electrode and a transparent electrode at a contact hole
CN102213880A (en) * 2010-04-05 2011-10-12 精工爱普生株式会社 Electro-optical device and electronic apparatus
CN102213880B (en) * 2010-04-05 2015-09-02 精工爱普生株式会社 Electro-optical device and electronic equipment
JP2011221071A (en) * 2010-04-05 2011-11-04 Seiko Epson Corp Electro-optic device and electronic equipment
JP2013178523A (en) * 2013-03-25 2013-09-09 Japan Display Inc Liquid crystal display device

Similar Documents

Publication Publication Date Title
JP2924506B2 (en) Pixel structure of active matrix liquid crystal display
TW408244B (en) Liquid crystal displaying apparatus and manufacturing method therefor
JPH0816756B2 (en) Transmissive active matrix liquid crystal display device
CN101236971B (en) Thin film transistor substrate and display device therefor
JPH0244317A (en) Liquid crystal display device with auxiliary capacity
CN109116647B (en) Array substrate, preparation method thereof and display device
US20050190312A1 (en) [pixel structure and manufacturing method thereof]
JP3926879B2 (en) Active matrix type liquid crystal display device and manufacturing method thereof
JPH03280018A (en) Liquid crystal display device
KR960014824B1 (en) Active matrix liquid crystal display apparatus
JPH10153793A (en) Liquid crystal display device
JPH0451120A (en) Liquid crystal display element array driven by thin-film electric field effect type transistor
JP2702294B2 (en) Active matrix substrate
JP2870072B2 (en) Liquid crystal display
JPH0473929B2 (en)
JPH0635004A (en) Liquid crystal display device
JPS58192090A (en) Matrix array
JPH10335671A (en) Driver monolithic driving element
JP2687967B2 (en) Liquid crystal display
JPH02230126A (en) Reflection type liquid crystal display device
JPS61235820A (en) Active matrix panel
JPH0427920A (en) Liquid crystal display device
JPH01277217A (en) Active matrix type liquid crystal display element array
JPH11271804A (en) Liquid crystal display
JPH0281028A (en) Liquid crystal display device