JPS6370832A - Active matrix panel - Google Patents

Active matrix panel

Info

Publication number
JPS6370832A
JPS6370832A JP21541886A JP21541886A JPS6370832A JP S6370832 A JPS6370832 A JP S6370832A JP 21541886 A JP21541886 A JP 21541886A JP 21541886 A JP21541886 A JP 21541886A JP S6370832 A JPS6370832 A JP S6370832A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
electrodes
film
thin film
conductive film
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21541886A
Other versions
JPH0823640B2 (en )
Inventor
Yojiro Matsueda
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136213Storage capacitors associated with the pixel electrode

Abstract

PURPOSE:To decrease flickering without decreasing a contrast ratio even at a high temp. by disposing the same conductive film as the conductive film in the channel part of a thin film transistor (TFT) on or below scanning lines of the preceding stage via a gate insulating film and connecting the conductive film to picture element electrodes. CONSTITUTION:The thin film 2 of polysilicon or amorphous silicon is deposited and patterned on an insulating substrate 1. The thin film acts as the channel part, source and drain electrodes and electrodes for creating the capacity thereof of the TFT. The gate insulating film 3 is then formed and the scanning line 4 in common use as the gate electrodes are formed thereon. An inter-layer insulating film 5 is deposited thereon and contact holes are opened thereto. Another substrate having a common electrodes is opposed via several mum space to the substrate formed with the picture element electrodes 6 and data lines 7. A liquid crystal is sealed into said space to obtain an active matrix panel. The contrast ratio is thereby increased and the flickering is decreased. The image screen having good reproducibility in a wide temp. range is thus obtd.
JP21541886A 1986-09-12 1986-09-12 The liquid crystal display device Expired - Lifetime JPH0823640B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21541886A JPH0823640B2 (en) 1986-09-12 1986-09-12 The liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21541886A JPH0823640B2 (en) 1986-09-12 1986-09-12 The liquid crystal display device

Publications (2)

Publication Number Publication Date
JPS6370832A true true JPS6370832A (en) 1988-03-31
JPH0823640B2 JPH0823640B2 (en) 1996-03-06

Family

ID=16672007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21541886A Expired - Lifetime JPH0823640B2 (en) 1986-09-12 1986-09-12 The liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH0823640B2 (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01227129A (en) * 1988-03-08 1989-09-11 Matsushita Electron Corp Picture display device
JPH01300225A (en) * 1988-05-27 1989-12-04 Seiko Instr Inc Thin film semiconductor device
JPH0244317A (en) * 1988-08-05 1990-02-14 Hitachi Ltd Liquid crystal display device with auxiliary capacity
JPH02176725A (en) * 1988-12-28 1990-07-09 Sony Corp Liquid crystal display device
JPH02245740A (en) * 1989-03-20 1990-10-01 Hitachi Ltd Liquid crystal display device
JPH0389324A (en) * 1989-09-01 1991-04-15 Matsushita Electron Corp Image display device
EP0434161A2 (en) * 1989-12-22 1991-06-26 Philips Electronics N.V. Active matrix electro-optic display device with storage capacitors and projection color apparatus employing same
JPH04335617A (en) * 1991-05-13 1992-11-24 Sharp Corp Active matrix substrate
EP0552045A1 (en) * 1992-01-17 1993-07-21 Sharp Kabushiki Kaisha Method of driving antiferroelectric liquid crystal device
US5305128A (en) * 1989-12-22 1994-04-19 North American Philips Corporation Active matrix electro-optic display device with storage capacitors and projection color apparatus employing same
EP0664473A1 (en) * 1993-12-24 1995-07-26 Kabushiki Kaisha Toshiba Active matrix type display device and manufacturing method thereof
JPH07281211A (en) * 1994-04-11 1995-10-27 Furontetsuku:Kk Electro-optic element
US5546204A (en) * 1994-05-26 1996-08-13 Honeywell Inc. TFT matrix liquid crystal device having data source lines and drain means of etched and doped single crystal silicon
US5917225A (en) * 1992-03-05 1999-06-29 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor having specific dielectric structures
US5962870A (en) * 1991-08-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
JP2008026908A (en) * 2006-07-24 2008-02-07 Samsung Electronics Co Ltd Liquid crystal display device
US8017456B2 (en) 2000-01-26 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895383A (en) * 1981-11-30 1983-06-06 Tokyo Shibaura Electric Co Matrix type display
JPS6236687A (en) * 1985-08-12 1987-02-17 Matsushita Electric Ind Co Ltd Display unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895383A (en) * 1981-11-30 1983-06-06 Tokyo Shibaura Electric Co Matrix type display
JPS6236687A (en) * 1985-08-12 1987-02-17 Matsushita Electric Ind Co Ltd Display unit

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01227129A (en) * 1988-03-08 1989-09-11 Matsushita Electron Corp Picture display device
JPH01300225A (en) * 1988-05-27 1989-12-04 Seiko Instr Inc Thin film semiconductor device
JPH0244317A (en) * 1988-08-05 1990-02-14 Hitachi Ltd Liquid crystal display device with auxiliary capacity
JPH02176725A (en) * 1988-12-28 1990-07-09 Sony Corp Liquid crystal display device
JPH02245740A (en) * 1989-03-20 1990-10-01 Hitachi Ltd Liquid crystal display device
JPH0389324A (en) * 1989-09-01 1991-04-15 Matsushita Electron Corp Image display device
EP0434161A2 (en) * 1989-12-22 1991-06-26 Philips Electronics N.V. Active matrix electro-optic display device with storage capacitors and projection color apparatus employing same
US5929463A (en) * 1989-12-22 1999-07-27 North American Philips Corporation Active matrix electro-optic display device with storage capacitors and projection color apparatus employing same
US5305128A (en) * 1989-12-22 1994-04-19 North American Philips Corporation Active matrix electro-optic display device with storage capacitors and projection color apparatus employing same
US6235546B1 (en) 1989-12-22 2001-05-22 North American Philips Corporation Method of forming an active matrix electro-optic display device with storage capacitors
JPH04335617A (en) * 1991-05-13 1992-11-24 Sharp Corp Active matrix substrate
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US5962870A (en) * 1991-08-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices
US6331723B1 (en) 1991-08-26 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device having at least two transistors having LDD region in one pixel
US5615026A (en) * 1992-01-17 1997-03-25 Sharp Kabushiki Kaisha Method of driving antiferroelectric liquid crystal device
EP0552045A1 (en) * 1992-01-17 1993-07-21 Sharp Kabushiki Kaisha Method of driving antiferroelectric liquid crystal device
US6476447B1 (en) 1992-02-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device including a transistor
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US5917225A (en) * 1992-03-05 1999-06-29 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor having specific dielectric structures
EP0664473A1 (en) * 1993-12-24 1995-07-26 Kabushiki Kaisha Toshiba Active matrix type display device and manufacturing method thereof
JPH07281211A (en) * 1994-04-11 1995-10-27 Furontetsuku:Kk Electro-optic element
US5546204A (en) * 1994-05-26 1996-08-13 Honeywell Inc. TFT matrix liquid crystal device having data source lines and drain means of etched and doped single crystal silicon
US8017456B2 (en) 2000-01-26 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2008026908A (en) * 2006-07-24 2008-02-07 Samsung Electronics Co Ltd Liquid crystal display device
KR101358827B1 (en) * 2006-07-24 2014-02-06 삼성디스플레이 주식회사 Liquid crystal display

Also Published As

Publication number Publication date Type
JPH0823640B2 (en) 1996-03-06 grant

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term