JPH02230126A - Reflection type liquid crystal display device - Google Patents

Reflection type liquid crystal display device

Info

Publication number
JPH02230126A
JPH02230126A JP1050427A JP5042789A JPH02230126A JP H02230126 A JPH02230126 A JP H02230126A JP 1050427 A JP1050427 A JP 1050427A JP 5042789 A JP5042789 A JP 5042789A JP H02230126 A JPH02230126 A JP H02230126A
Authority
JP
Japan
Prior art keywords
liquid crystal
display device
crystal display
switching element
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1050427A
Other languages
Japanese (ja)
Other versions
JPH0752266B2 (en
Inventor
Hiroshi Iwai
岩井 宏
Mamoru Takeda
守 竹田
Ichiro Yamashita
一郎 山下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5042789A priority Critical patent/JPH0752266B2/en
Publication of JPH02230126A publication Critical patent/JPH02230126A/en
Publication of JPH0752266B2 publication Critical patent/JPH0752266B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE:To prevent the leakage current caused by the photoconductivity of a switching element and the lowering in the contrast of a screen and to simplify a production process by providing an opaque insulating substance whose light absorption coefficient is high in an intermediate layer between a reflection picture element electrode and the switching element connected to the electrode. CONSTITUTION:In a reflection type liquid crystal display device, the black insulating body layer 14 constituted of PrMnO3 by sputtering is formed in the intermediate layer between the reflection picture element electrode 15 and a TFT and an auxiliary capacity 13 functioning as the switching element. Therefore, incident light and reflected light are kept from advancing in the inside of the TFT side and the leakage current caused by the photoconductivity of the switching element is prevented. By forming the black insulating body 14 between a substrate 11 on the TFT side and the reflection picture element electrode 15, the stage for forming a back matrix on a opposed transparent substrate 18 is reduced and the alignment of the substrate 11 on the TFT side with the opposed transparent substrate 18 is made needless, thereby simplifying the production process.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、プロジェクシゴン表示デバイスに利用するア
クティブ素子を有した反射型液晶表示デバイスに関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a reflective liquid crystal display device having an active element used in a projection display device.

従来の技術 近年、アクティブ素子を利用した液晶表示デバイスはポ
ケットテレビまたは情報端末として利用されるようにな
ってきた。
2. Description of the Related Art In recent years, liquid crystal display devices using active elements have come to be used as pocket televisions or information terminals.

以下に従来の反射型液晶表示デバイスについて説明する
A conventional reflective liquid crystal display device will be explained below.

第2図は従来の反射型液晶表示デバイスの断面図であり
、1は絶縁基板、2は配線電極、3はスイッチング素子
、4は絶縁体層、5は反射画素電極、6は液晶層、7は
対向共通電極、8は対向透明基板、9はブラックマトリ
ックスである。
FIG. 2 is a cross-sectional view of a conventional reflective liquid crystal display device, in which 1 is an insulating substrate, 2 is a wiring electrode, 3 is a switching element, 4 is an insulating layer, 5 is a reflective pixel electrode, 6 is a liquid crystal layer, and 7 is a cross-sectional view of a conventional reflective liquid crystal display device. 8 is a counter common electrode, 8 is a counter transparent substrate, and 9 is a black matrix.

以上のように構成された反射型液晶表示デバイスについ
て、以下その動作について説明する。
The operation of the reflective liquid crystal display device configured as described above will be described below.

まず、スイッチング素子3がオン状態になると反射画素
電極5に電流が流れる。これにより、反射画素電極5と
対向共通電極7に挟まれた液晶層6に電圧が印加され、
液晶が動作する。このとき、表示を見やすくするための
光は対向透明電極側から照射され、反射画素電極5で入
射光は反射される。ここで、光は液晶層6を通る際に偏
光され、偏光されなかった画素との間にコントラストの
差が生じ、画像が得られる。対向透明電極基板8上のブ
ラックマトリックス9は反射画素電極5部分以外で生じ
る色むらを隠すためのものである。
First, when the switching element 3 is turned on, a current flows through the reflective pixel electrode 5. As a result, a voltage is applied to the liquid crystal layer 6 sandwiched between the reflective pixel electrode 5 and the opposing common electrode 7.
LCD works. At this time, light for making the display easier to see is irradiated from the opposite transparent electrode side, and the incident light is reflected by the reflective pixel electrode 5. Here, the light is polarized when passing through the liquid crystal layer 6, and a difference in contrast occurs between the light and the pixels that are not polarized, and an image is obtained. The black matrix 9 on the opposing transparent electrode substrate 8 is for hiding color unevenness occurring in areas other than the reflective pixel electrode 5 portion.

発明が解決しようとする課題 しかしながら上記の従来の構成では、光が液晶層側から
反射電極間の絶縁層を通ってTPT内部に進入するため
、スイッチング素子に光が作用して、スイッチング素子
を構成する半導体層の電気抵抗を減少させる(光伝導)
。これにより画素電極と対向共通電極とに蓄えられた電
荷がスイッチング素子を通して漏れ、結果的に液晶の配
向が変化してコントラストの低下をもたらすという欠点
を有していた。
Problems to be Solved by the Invention However, in the above conventional configuration, light enters the inside of the TPT from the liquid crystal layer side through the insulating layer between the reflective electrodes, so the light acts on the switching element and the switching element is formed. reducing the electrical resistance of the semiconductor layer (photoconduction)
. This has the disadvantage that the charge stored in the pixel electrode and the opposing common electrode leaks through the switching element, resulting in a change in the orientation of the liquid crystal, resulting in a decrease in contrast.

本発明は上記従来の問題点を解決するものでディスプレ
イ画面のコントラスト低下を解消するとともにブラック
マトリックスが同時に形成することができ、工程の簡略
化も実現することのできる反射型液晶表示デバイスを提
供することを目的とする。
The present invention solves the above-mentioned conventional problems, and provides a reflective liquid crystal display device that eliminates the decrease in contrast of a display screen, allows a black matrix to be formed at the same time, and simplifies the process. The purpose is to

課題を解決するための手段 この目的を達成するために本発明の反射型液晶表示デバ
イスは、反射画素電極とこれに接続されたスイッチング
素子との中間層に設けられた光吸収係数の高い、不透明
な絶縁物から構成されている。
Means for Solving the Problems To achieve this object, the reflective liquid crystal display device of the present invention uses an opaque material with a high light absorption coefficient provided in an intermediate layer between a reflective pixel electrode and a switching element connected thereto. It is made of insulating material.

作用 この構成によって、入射光及び反射光が反射電極間の絶
縁層からアレイ内部に進入することを防ぎ、スイッチン
グ素子の光伝導が原因となる漏れ電流を防ぐことができ
る。
Effect: This configuration prevents incident light and reflected light from entering the inside of the array from the insulating layer between the reflective electrodes, and prevents leakage current caused by photoconduction of the switching elements.

実施例 以下本発明の一実施例の反射型液晶表示デバイスについ
て、図面を参照しながら説明する。
EXAMPLE Hereinafter, a reflective liquid crystal display device according to an example of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例における反射型液晶表示デバ
イスの断面構造を示すものである。第1図において、1
1は絶縁基板としてガラス基板、l2は配線電極、13
はスイッチング素子として薄膜トランジスタ(以下、T
PTという)および補助容量、14は黒色絶縁体として
、スパッタにより形成されたP rMnos 、15は
反射画素電極、l6は液晶層、17は対向共通電極とし
て、スバッタにより成膜されたITOであり、18は対
向透明基板としてガラス基板である。
FIG. 1 shows a cross-sectional structure of a reflective liquid crystal display device according to an embodiment of the present invention. In Figure 1, 1
1 is a glass substrate as an insulating substrate, 12 is a wiring electrode, 13
is a thin film transistor (hereinafter referred to as T) as a switching element.
PT) and auxiliary capacitance, 14 is P rMnos formed by sputtering as a black insulator, 15 is a reflective pixel electrode, l6 is a liquid crystal layer, 17 is an ITO film formed by sputtering as a common electrode, 18 is a glass substrate as a counter transparent substrate.

さらに、補助容量は配線電極l2上に形成されている。Furthermore, an auxiliary capacitor is formed on the wiring electrode l2.

以上のように構成された反射型液晶表示デバイスについ
て、その動作は従来例の動作と同様である。
The operation of the reflective liquid crystal display device configured as described above is similar to that of the conventional example.

以上のように本実施例によれば、反射画素電極とスイッ
チング素子の中間層に黒色絶縁体PrMn03で形成す
るにより、光のTPT側内部八の進入を抑えることがで
き、スイッチング素子の光伝導による漏れ電流を防ぐこ
とができる。
As described above, according to this embodiment, by forming the intermediate layer between the reflective pixel electrode and the switching element with the black insulator PrMn03, it is possible to suppress the entry of light into the TPT side, and to prevent light from entering the interior of the TPT side. Leakage current can be prevented.

また、黒色絶縁体をTFT側基板の反射画素電極間に形
成することにより、対向透明基板上にブラックマトリッ
クスの形成工程が削減でき、TFT側基板と対向透明基
板とのアライメントが不用となり、製造工程の簡略化が
図れる。
In addition, by forming a black insulator between the reflective pixel electrodes on the TFT side substrate, the process of forming a black matrix on the opposing transparent substrate can be reduced, and alignment between the TFT side substrate and the opposing transparent substrate is no longer required, and the manufacturing process can be simplified.

なお、黒色絶縁体としてPrMnOsという酸化物を用
いたが、光吸収が高く、絶縁性のよい有機物でもよい。
Although an oxide called PrMnOs was used as the black insulator, an organic material with high light absorption and good insulation properties may be used.

発明の効果 以上のように本発明は反射型液晶表示デバイスにおいて
、反射画素電極とこれに接続されたスイッチング素子と
の中間層に光吸収係数の高い、不透明な絶縁物を設ける
ことにより、液晶層側からの光が絶縁層を通ってアレイ
内部へ進入することを防ぎ、スイッチング素子が光伝導
により抵抗が下がることによる漏れ電流を防ぐことがで
きる.更に、対向透明基板側に形成していたブラックマ
トリックスを不要にすることができ、製造工程の簡略化
に大きく貢献し、生産のコストを低減できるなど、数々
の優れた効果を得ることのできる反射型液晶表示デバイ
スを実現できるものである。
Effects of the Invention As described above, in a reflective liquid crystal display device, the present invention provides a liquid crystal layer by providing an opaque insulator with a high light absorption coefficient in the intermediate layer between a reflective pixel electrode and a switching element connected thereto. This prevents light from entering the array through the insulating layer, and prevents leakage current caused by the reduction in resistance of the switching elements due to photoconduction. Furthermore, it is possible to eliminate the need for the black matrix formed on the opposing transparent substrate side, greatly contributing to the simplification of the manufacturing process and reducing production costs. It is possible to realize a type liquid crystal display device.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例における反射型液晶表示デバ
イスの断面図、第2図は従来の反射型液晶表示デバイス
を示す断面図である。 II・・・・・・ガラス基板、l2・・・・・・配線電
極、13・・・・・・TFT,14・・・・・・PrM
no* 、15・・・・・・反射画素電極、16・・・
・・・液晶層、17・・・・・・対向共通電極、18・
・・・・・対向ガラス基板。 代理人の氏名 弁理士 粟野重孝 はか1名//, t
8−,2y−ラスJ[ l2・一丁線電兆 !3一  丁FTkよひ楕一助界1 14−F r M−yt 03 l5・一反M画桑覧極 l6−・液&1
FIG. 1 is a sectional view of a reflective liquid crystal display device according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional reflective liquid crystal display device. II...Glass substrate, l2...Wiring electrode, 13...TFT, 14...PrM
no*, 15... reflective pixel electrode, 16...
...Liquid crystal layer, 17...Counter common electrode, 18.
...Counter glass substrate. Name of agent: Patent attorney Shigetaka Awano, 1 person//, t
8-, 2y-Las J [l2・Itchosen Dencho! 31 Ding FTkyohi ellipse aid world 1 14-F r M-yt 03 l5・Ittan M picture mulberry list pole l6-・liquid &1

Claims (4)

【特許請求の範囲】[Claims] (1)液晶を表示させるためにマトリックス上に配列さ
れている反射画素電極群と、前記画素電極に信号を供給
するためのスイッチング素子群とを具備した基板と、液
晶を介して一定の間隔を有して前記基板と対向し、共通
電極を有している基板とで構成されており、前記反射画
素電極とこれに接続されたスイッチング素子との中間層
に光吸収係数の高い、不透明な絶縁物とを備えたことを
特徴とする反射型液晶表示デバイス。
(1) A substrate equipped with a group of reflective pixel electrodes arranged in a matrix for displaying liquid crystal, and a group of switching elements for supplying signals to the pixel electrodes, and a substrate provided with a fixed interval through the liquid crystal. and a substrate facing the substrate and having a common electrode, and an opaque insulator with a high light absorption coefficient is provided as an intermediate layer between the reflective pixel electrode and the switching element connected to the reflective pixel electrode. A reflective liquid crystal display device characterized by comprising:
(2)スイッチング素子が薄膜トランジスタ、ダイオー
ド、非線形スイッチング素子で形成されていることを特
徴とする請求項(1)記載の反射型液晶表示デバイス。
(2) The reflective liquid crystal display device according to claim (1), wherein the switching element is formed of a thin film transistor, a diode, or a nonlinear switching element.
(3)スイッチング素子が各画素に複数形成されている
ことを特徴とする請求項(2)記載の反射型液晶表示デ
バイス。
(3) The reflective liquid crystal display device according to claim (2), wherein a plurality of switching elements are formed in each pixel.
(4)反射画素電極群の各表示画素に補助容量が形成さ
れていることを特徴とする請求項(1)記載の反射型液
晶表示デバイス。
(4) The reflective liquid crystal display device according to claim (1), wherein an auxiliary capacitor is formed in each display pixel of the reflective pixel electrode group.
JP5042789A 1989-03-02 1989-03-02 Reflective liquid crystal display device Expired - Fee Related JPH0752266B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5042789A JPH0752266B2 (en) 1989-03-02 1989-03-02 Reflective liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5042789A JPH0752266B2 (en) 1989-03-02 1989-03-02 Reflective liquid crystal display device

Publications (2)

Publication Number Publication Date
JPH02230126A true JPH02230126A (en) 1990-09-12
JPH0752266B2 JPH0752266B2 (en) 1995-06-05

Family

ID=12858571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5042789A Expired - Fee Related JPH0752266B2 (en) 1989-03-02 1989-03-02 Reflective liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH0752266B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04322219A (en) * 1991-04-22 1992-11-12 Matsushita Electric Ind Co Ltd Black matrix and production thereof
WO1997043781A3 (en) * 1996-05-14 1998-02-26 Micron Display Tech Inc Praseodymium-manganese oxide layer for use in field emission displays
US6413577B1 (en) 1996-05-14 2002-07-02 Micron Technology, Inc. Process for operating a field emission display with a layer of praseodymium-manganese oxide material
US6747718B2 (en) 2000-01-21 2004-06-08 Nec Corporation Reflection-type liquid crystal display and method for manufacturing the same
US6784957B2 (en) 2000-01-14 2004-08-31 Nec Corporation Liquid crystal display apparatus with protective insulating film for switching element and production method thereof
KR100548793B1 (en) * 1997-02-06 2006-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Reflection type display device and electronic device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04322219A (en) * 1991-04-22 1992-11-12 Matsushita Electric Ind Co Ltd Black matrix and production thereof
WO1997043781A3 (en) * 1996-05-14 1998-02-26 Micron Display Tech Inc Praseodymium-manganese oxide layer for use in field emission displays
US6413577B1 (en) 1996-05-14 2002-07-02 Micron Technology, Inc. Process for operating a field emission display with a layer of praseodymium-manganese oxide material
KR100548793B1 (en) * 1997-02-06 2006-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Reflection type display device and electronic device
US7176993B2 (en) 1997-02-06 2007-02-13 Semiconductor Energy Laboratory Co., Ltd. Reflection type display device using a light shading film with a light shading material evenly dispersed throughout
US6784957B2 (en) 2000-01-14 2004-08-31 Nec Corporation Liquid crystal display apparatus with protective insulating film for switching element and production method thereof
US7705945B2 (en) 2000-01-14 2010-04-27 Nec Corporation Method of producing a reflective liquid crystal display
US6747718B2 (en) 2000-01-21 2004-06-08 Nec Corporation Reflection-type liquid crystal display and method for manufacturing the same
US7215394B2 (en) 2000-01-21 2007-05-08 Nec Corporation Reflection-type liquid crystal display and method for manufacturing the same
US7450198B2 (en) 2000-01-21 2008-11-11 Nec Corporation Reflection-type liquid crystal display and method for manufacturing the same

Also Published As

Publication number Publication date
JPH0752266B2 (en) 1995-06-05

Similar Documents

Publication Publication Date Title
US4904056A (en) Light blocking and cell spacing for liquid crystal matrix displays
US6091466A (en) Liquid crystal display with dummy drain electrode and method of manufacturing same
US5056895A (en) Active matrix liquid crystal liquid crystal light valve including a dielectric mirror upon a leveling layer and having fringing fields
JP3093604B2 (en) Liquid crystal display
JP3579051B2 (en) Liquid crystal halftone display with uniform gray level
JP2000035591A (en) Active matrix element, and light emitting element using the element, light modulation element, photo-detecting element, exposure element, and display device
US9285647B2 (en) TFT array substrate, E-paper display panel and method for manufacturing the same
US5515187A (en) Liquid crystal display with signal line, storage capacitor and source elongated portions forming storage capacitors between two switching elements
TWI284240B (en) Liquid crystal display device
US5305128A (en) Active matrix electro-optic display device with storage capacitors and projection color apparatus employing same
JP2000323715A (en) Thin film semiconductor element for display and display device
JP3454340B2 (en) Liquid crystal display
JP3376376B2 (en) Liquid crystal display device and electronic device using the same
JPH0244317A (en) Liquid crystal display device with auxiliary capacity
JP2003207794A (en) Active matrix type display device
JPH0713196A (en) Active matrix type liquid crystal display device
JPH02230126A (en) Reflection type liquid crystal display device
EP0209112A2 (en) Light blocking and cell spacing structure for liquid crystal matrix displays
JPH09243999A (en) Liquid crystal display device
JPS6328308B2 (en)
JPH01277217A (en) Active matrix type liquid crystal display element array
JPH10253982A (en) Transverse electric field system active matrix type liquid crystal display device
JPH0427920A (en) Liquid crystal display device
JPH01244426A (en) Reflection type liquid crystal display device
US6235546B1 (en) Method of forming an active matrix electro-optic display device with storage capacitors

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees