JP3376376B2 - Liquid crystal display device and electronic device using the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and an electronic device using the same, and more specifically, a semiconductor active device such as a thin film transistor (hereinafter referred to as "TFT") as a switching element for each pixel. The present invention relates to an active matrix liquid crystal display device provided with an element and an electronic device using the same.

[0002]

2. Description of the Related Art In an active matrix type liquid crystal display device, a plurality of scanning lines are arranged in a row direction and a plurality of signal lines are arranged in a column direction. Pixels are arranged at each intersection of the matrix. Each pixel includes a pixel electrode and a switching element connected to the pixel electrode. The pixel information of the active matrix liquid crystal display device is on / off controlled by a switching element. Liquid crystal is used as the display medium.

A MIM (Met) is used as a switching element.
al-Insulator-Metal) and three-terminal element,
In particular, a field effect thin film transistor (hereinafter referred to as “TFT”) having a gate, a source and a drain is used. In this specification, the current terminal connected to the pixel electrode is called a drain, and the other current terminal connected to the signal line is called a source. A unit cell including a pixel electrode and a thin film transistor is called a pixel, and a large number of pixels are in a matrix.
The image is displayed on the display units arranged in a line.

Scan lines (gate lines) arranged in parallel to rows
Are connected to the gate electrodes of the thin film transistors corresponding to the row. A signal line (source line) arranged in parallel to a column is connected to the source electrode of the thin film transistor corresponding to the column. A circuit that drives a scan line is referred to as a scan line drive circuit, and a circuit that drives a signal line is referred to as a signal line drive circuit. A circuit that includes a scan line driver circuit and a signal line driver circuit and drives a display portion is generically referred to as a peripheral circuit.

An active matrix type liquid crystal display device using a TFT as a switching element for each pixel electrode is suitable for a larger number of pixels than a simple matrix type liquid crystal display device in which cross electrodes are formed on a pair of substrates, and the screen is It is clear. In recent years, active matrix liquid crystal display devices have become the mainstream as display devices such as display screens of personal computers and viewfinders of video cameras.

In this active matrix type liquid crystal display device, it is usually necessary to form a large number of pixel electrodes and thin film transistors on a transparent glass substrate. It is difficult to apply a silicon crystallization process by annealing at a high temperature to a transparent glass substrate. As a thin film transistor used in a liquid crystal display device, an amorphous silicon thin film transistor using amorphous silicon that can be formed even at a low temperature has been used.

However, the mobility of electrons and holes in amorphous silicon is as small as about 1 cm ² / Vs. Amorphous silicon thin film transistors using amorphous silicon as a channel layer are difficult to perform high-speed switching operation. Therefore, a peripheral circuit chip separately formed on a normal single crystal silicon substrate is externally arranged on the glass substrate, or a flexible substrate on which the peripheral circuit chip is arranged is pasted on the glass substrate. The structure is adopted.

Further, a technique of polycrystallizing amorphous silicon by laser annealing has also been used.

[0009]

In order to reduce the manufacturing cost of the liquid crystal display device and to improve the efficiency of the manufacturing process, it is preferable to integrally form the display unit and the peripheral circuit on the same substrate.

An object of the present invention is to provide a liquid crystal display device in which a peripheral circuit is integrated with a display portion while maintaining high speed of the peripheral circuit.

[0011]

According to one aspect of the present invention, a first substrate, a plurality of pixels formed on the first substrate and arranged in a matrix, and arranged in a row direction. Including a plurality of scanning lines extending in a row direction and a plurality of signal lines extending in the column direction, one of the pixels is connected to each intersection of the scanning line and the signal line, and each pixel is A first display section including a semiconductor active element and a pixel electrode; and a first section including a scanning line driving circuit that is disposed on a row-direction end of the first substrate, includes a semiconductor active element, and drives the scanning line. A peripheral circuit, a second peripheral circuit that is disposed on an end portion in the column direction of the first substrate, includes a semiconductor active element, and includes a signal line drive circuit that drives the signal line, and the second substrate on the first substrate. A transparent second substrate arranged facing each other, a liquid crystal layer sandwiched between the first and second substrates, and Of the first and second peripheral circuits, the insulating black light-shielding film is arranged above the circuit requiring relatively high speed, and the insulating black light shielding film is arranged above the circuit not requiring relatively high speed. A liquid crystal display device having a conductive light shielding film is provided.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

Recently, laser annealing using an excimer laser or the like, Ni on amorphous silicon before crystallization is performed.
With the development of low-temperature crystallization techniques such as the technique of accelerating crystallization by doping Ge or Ge, amorphous silicon formed on a glass substrate is crystallized by irradiation of an excimer laser to form polycrystalline silicon (polysilicon). Forming techniques are being developed.

The mobility of electrons and holes in the channel layer of polycrystalline silicon is about 50 to 100 cm ² / Vs, which is significantly higher than the mobility of conventional amorphous silicon. Therefore, when the polycrystalline silicon TFT is used, the switching operation can be performed at a remarkably high speed as compared with the case where the conventional amorphous silicon TFT is used.

The first aspect of the present invention with reference to FIGS.
A liquid crystal display device according to the embodiment will be described.

FIG. 1 shows an example of a planar arrangement of an active matrix type liquid crystal display device A in which a display section for displaying an image and a peripheral circuit section for controlling the display section are integrally formed on the same substrate. This liquid crystal display device includes a display unit B having a substantially rectangular shape for displaying an image, and a peripheral circuit unit C arranged around the display unit B and driving the display unit B.

The peripheral circuit section includes a first peripheral circuit (hereinafter referred to as "scanning line driving circuit") C1 and a signal line which are arranged on the short sides (left and right) of the display section B where the scanning lines extend. A second peripheral circuit (hereinafter, referred to as a “signal line drive circuit”) C2 arranged on the long side (upper and lower sides) of the extension destination.
A black matrix (BM) 1 formed of Cr is arranged as a conductive light-shielding film on the scanning line driving circuit C1. An insulating black light-shielding film 201 made of an insulating black resin is arranged on the signal line drive circuit C2.

The peripheral portion of the peripheral circuit C is surrounded by a sealing material 5 for sealing the liquid crystal in the accommodation space. The display section B and the peripheral circuit section C both include a plurality of TFTs which are dispersedly arranged and have polycrystalline silicon as a semiconductor layer.

FIG. 2 is an equivalent circuit diagram showing an example of the entire circuit configuration of the active matrix type liquid crystal display device A.
As described above, the liquid crystal display device A includes the display section B and the peripheral circuit section C.

In the display section B, for example, a total of 2400 signal lines 11, 11, 11 ... Run in the column direction. Three
Color information such as RGB is transmitted through the signal line of the book. That is, 800 image information can be transmitted by 2400 signal lines.

The display section B further has, for example, a total of 60
0 scanning lines 15, 15, 15 ... Cross the signal line 11 and run in the row direction. A pixel 21 is arranged at each intersection of the signal line and the scanning line. 24 in total on the display unit B
00 × 600 pixels 21, 21, 21 ... Are arranged in a matrix. Three display colors of RGB can be displayed for each display unit composed of three pixels, and 800 × 600 color image information can be displayed on the entire display unit.

The pixel 21 includes a liquid crystal cell 23 and a pixel TFT 2
5 and storage capacity 27. The pixel TFT 25 is
Although a double gate TFT is illustrated in FIG. 2, a single gate TFT may be used. In order to reduce the leak current, it is effective to use the double gate TFT.

The source electrode S of the pixel TFT 25 is connected to the signal line 11. Gate electrode G of the pixel TFT 25
Are connected to the scanning line 15. The liquid crystal cell 23 and the storage capacitor 27 are connected in parallel to the drain electrode D side of the pixel TFT 25.

The storage capacitor 27 included in the pixel 21 stores the signal charge injected from the signal line 11. Storage capacity 2
7 is effective for holding the accumulated charges even when the leak current of the pixel TFT 25 cannot be ignored. The storage capacitor 27 is provided as needed.

The large number of pixels 21 includes 600 scanning lines 15, 15, 15 ... Which are driven by the scanning line driving circuit C1.
・ By, the line is scanned in sequence. Each pixel 21 receives image information from a total of 2400 signal lines 11 driven by the signal line drive circuit C2 during the corresponding scanning period.

FIG. 3 is a sectional view showing a structural example of the pixel TFT included in the display section B.

FIG. 3A shows an example of the structure of a bottom gate type TFT.

The bottom gate type T shown in FIG.
The FT 25 has a gate electrode G formed of a metal such as Cr on the transparent substrate 31. An insulating film 33 such as SiN or SiO _{2 that} functions as a gate insulating film is formed on the gate electrode G, and a polysilicon film 35 for a channel that functions as a channel layer is further deposited thereon. Gate electrode G of polysilicon film 35 for channel
A polysilicon film 35 for the channel is formed on the regions on both sides of
Highly doped polysilicon high concentration layers 37, 37 are formed. A source electrode S and a drain electrode D are formed on the polysilicon high concentration layers 37, 37.
Is formed. Pixel TFT 2 formed in this way
5 is covered with an interlayer insulating film 41 formed of a nitride film, an oxide film, or the like to insulate and protect the surroundings. Interlayer insulation film 41
A contact hole is opened in the above, and a pixel electrode 45 made of ITO is formed thereon. The pixel electrode 45 is the pixel TFT 25.
Of the drain electrode D.

The polysilicon film is obtained, for example, by depositing an amorphous silicon film and crystallizing the amorphous silicon film. As a crystallization process, XeCl
It is preferable to use a laser annealing crystallization technique using an excimer laser at a low temperature using a (wavelength 308 nm) or KrF (wavelength 248 nm) light source. If the laser annealing crystallization technique is used, for example, it is possible to crystallize only the TFT portion forming the signal line driving circuit that requires high-speed operation or only the TFT portion of the peripheral circuit. In this case, the area for scanning the laser beam can be reduced.

FIG. 3B shows a structural example of a top gate type TFT.

Top gate type TFT shown in FIG.
25, a polysilicon film 35 functioning as a channel layer is formed on the transparent substrate 31, and an insulating film 3 such as SiN or SiO ₂ functioning as a gate insulating film is formed thereon.
3 is formed. A gate electrode G formed of a metal such as Cr is formed on the insulating film 33.

In the source region and the drain region on the polysilicon film 35, a polysilicon high-concentration layer 37 doped at a higher concentration than the channel polysilicon layer 35,
37 is formed. This polysilicon high concentration layer 3
A source electrode S and a drain electrode D are formed on the layers 7 and 37.

The pixel TFT 25 formed in this way
Is an interlayer insulating film 41 formed of a nitride film, an oxide film, or the like.
Cover with and protect from the surroundings. A contact hole is opened in the interlayer insulating film 41, and the pixel electrode 4 made of ITO is formed on the contact hole.
5 is formed. The pixel electrode 45 is connected to the drain electrode D of the pixel TFT 25.

A Ti / Al / Ti laminated layer may be used instead of the Cr layer. The desired region of the channel polysilicon layer 35 may be doped with a high concentration of impurities and the high concentration polysilicon layer 37 may be omitted. Further, the peripheral circuit TFT can be formed in a portion other than the pixel electrode.

FIG. 4 corresponds to a sectional view taken along line IVa-IVb of FIG. The liquid crystal display device A shown in FIG. 4 is provided with a display section B and a peripheral circuit section C provided outside the display section B. The liquid crystal display device A includes a first transparent substrate 31, a second transparent substrate 51, and a liquid crystal material E filled in a liquid crystal housing space 81 formed between these transparent substrates.

In the display section B, a plurality of pixels 21 are formed.

The pixel 21 includes a pixel TFT 25 and a pixel electrode 45 formed on the inner surface of the first transparent substrate 31.

As shown in FIG. 4, a peripheral circuit section C is arranged on the peripheral side of the display section B. In the figure, the peripheral circuit formed on the first transparent substrate 31 is a first peripheral circuit (scan line driving circuit) C1. Scan line drive circuit C
1 includes a polycrystalline thin film transistor, that is, a peripheral circuit TFT 85 as an active driving element.

The unevenness due to the pixel TFT 25 and the peripheral circuit TFT 85 is flattened by the flattening film 73b formed on the first transparent substrate 31. The pixel electrode 45 is provided on the flattening film 73B. An alignment film 75b is formed on the pixel electrode 45 and the flattening film 73b in the display area B.

The pixel 21 includes red (R), green (G), and blue (B) color resins 61 provided on the inner surface of the second transparent substrate 51 (on the side of the first transparent substrate 31).
63, 65, and a common electrode 71 formed under each color resin 61, 63, 65. Color resin 61,6
3, 65 are provided at positions facing the pixel electrode 45.

Between the color resins 61, 63 and 65, Cr is used.
And a black matrix (BM) 1 for shielding the pixel TFT 25 from light. Further, above the peripheral circuit TFT 85 and on the inner surface of the second transparent substrate 51, a black matrix (BM) made of Cr which is a light shielding film for covering the peripheral circuit TFT 85.
1, 1, 1, ... Are formed.

The color resins 61, 63, 65 and the black matrix BM1 are covered with a flattening insulating film 73a. The planarization insulating film 73a covers the surfaces of the color resins 61, 63, and 65 having irregularities to form a flat surface. The common electrode 71 facing all the pixels is formed on this flat surface. The surface of the common electrode 71 is covered with an alignment film 75a made of a resin such as polyimide.

As the insulating black resin, polyimide containing a black color pigment can be used. If photosensitive polyimide is used as the material of the insulating black resin, only a desired position, for example, a circuit of the second peripheral circuit that requires high speed, such as a shift register circuit, is formed without forming a separate mask. A light-shielding film can be formed so as to cover the.

First transparent substrate 31 and second transparent substrate 51
And a sealing material 5 made of polyimide is interposed outside the peripheral circuit portion C. The first transparent substrate 31 and the second transparent substrate 51 define a liquid crystal storage space 81 together with the seal material 5. A liquid crystal material E is filled in the liquid crystal storage space 81.

The liquid crystal cell 23 (FIG. 2) includes a pixel electrode 45 made of ITO, a common electrode 71 made of ITO, and a liquid crystal material E filled between the two.

The circuit configuration of the peripheral circuit section C will be described in detail.

FIG. 5 shows a scanning line drive circuit C having 150 stages.
3 is a circuit diagram showing a drive circuit for one stage of FIG. The scanning line drive circuit C1 includes the drive circuit shown in FIG.
Stages, connected in series. The drive circuit for one stage shown in FIG. 5 is for bidirectional switch unit 111 for switching the scanning method, shift register unit 115 for generating the scanning signal, and for determining the timing of the scanning signal. Multiplexer section 117 and three-stage serial inverters 121a, 121a, 121a for increasing the driving capability.
And an output buffer unit 121 including

The power supply voltages of the flip-flop circuit 125 are VDD and GND. The output from the flip-flop circuit 125 is output to the multiplexer unit 117 via the NAND gate and the inverter. In the multiplexer unit 117, the output signal from the flip-flop circuit 125 is branched into four output signal lines. The four branched output signals are multiplexed signals MP1 to MP
It is supplied to the output buffer unit 121 after being logically ANDed with 4.

The output buffer section 121 increases the driving capability for the load and outputs the four signals from the multiplexer section 117. The output buffer unit 121 is
It has four output terminals. Output buffer unit 121
Each output terminal of is connected to the gate G of the pixel TFT 25 of the display section B via a scanning line. The scanning line drive circuit C1 has a 150-stage configuration, and each stage has four output terminals. Therefore, the scanning line driving circuit C1 scans 600 scanning lines 15, 15, 15, ....

The circuit operation of the scanning line drive circuit C1 will be described. The scanning line drive circuit C1 sequentially scans the scanning lines 15 in synchronization with the clock signal CL or its inverted signal (-CL). All pixel TFTs 25 connected to one scanning line 15 are temporarily turned on all at once. Since each row is sequentially scanned, the number of scanning line drive signals is 600 per screen, and the shift register unit 11
5 may form 150 signals per one screen before multiplexing. Therefore, the shift register unit 115 on the scanning line side is not required to have such high speed. The pulse frequency of the clock signal CL of the shift register unit 115 of the scanning line driving circuit C1 and its inverted clock signal (-CL) is 40 to 60 kHz.

The configuration of the signal line drive circuit C2 will be described.

FIG. 2 shows a schematic structure of the signal line drive circuit C2.

The signal line drive circuit C2 includes an analog switch 151, an analog switch control section 161 for controlling the analog switch 151, and an analog switch control signal line 181 for connecting the analog switch 151 and the analog switch control section 161. Including.

The video signal generated from the video signal generator (not shown) is transmitted to the analog switch 151 via the video signal line 17. If the analog switch 151 is on, the video signal is transmitted to the source electrode S of the pixel TFT 25 via the signal line 11.

The analog switch control section 161 controls whether or not the video signal is transmitted to the source electrode S of the pixel TFT 25 by turning on / off the analog switch. FIG. 6 shows the analog switch 151 and the analog switch 151. Analog switch control unit 161 for controlling 151
The connection relationship between the signal line drive circuit C2 including, the video signal line 17, and the pixel 21 of the display section B is shown.

The total number of pixels 21 in the display section B is the pixel number.
1 to the pixel number. There are 800 pixels up to 800. One pixel 21 includes sub-pixels of three colors of RGB. The number of sub-pixels in the display unit B is 2400 (800 × 3).

The number of video signal lines 17 is 24. The video signal line 17 corresponds to three colors of RGB, from the video signal line R1 to the video signal line R8, the video signal line G1 to the video signal line G8, and the video signal line B.
There are a total of 24 from 1 to the video signal line B8.

The total number of analog switches 151 is from analog switch No. 1 to analog switch No. 2400.
Up to 2400. Each analog switch 151
Is a CMOS type T which is a pair of a p-type TFT and an n-type TFT.
Includes FT.

The analog switch control section 161 is 100
-Stage flip-flop circuits 173, 173, 173 ...
Shift register circuit 1 configured by connecting in series
71, a buffer circuit 175 connected to each output of the flip-flop 173 forming the shift register circuit 171, and an analog switch control signal line 181 connecting the output of the buffer circuit 175 and the control electrode of the analog switch. There is.

The clock signal CK and the inverted clock signal (-CK) common to each stage are input to the clock terminals of the 100-stage flip-flop circuit. Of the 100-stage flip-flop circuit, the first-stage flip-flop circuit 1
The SP signal is input to the input terminal D of 73. The output signal of the first-stage flip-flop circuit 173 is supplied from the output terminal Q of the first-stage flip-flop circuit 173,
It is input to the first stage buffer circuit 175.

Further, the first-stage flip-flop circuit 17
The output Q of No. 3 is input to the input terminal D of the next stage (second stage). The output of the second-stage flip-flop circuit is the second
It is connected to the input terminal of the buffer circuit 175 of the stage.
Hereinafter, the output of the flip-flop circuit 173 is sequentially connected to the input terminal of the next-stage flip-flop circuit 173 and also to the multiple input terminals of the next-stage output buffer circuit 175.

The output of the buffer circuit 175 is the inverter 1 of the third stage counting from the flip-flop circuit 173 side.
It is branched into two lines between the 76c and the fourth stage inverter 176d. One of the two branched lines is
Further, n outputs are made via one inverter 176f. The other branched line has two more inverters 1
P output through 76d and 176e.

FIG. 7 is a circuit diagram of the flip-flop circuit 173 which constitutes the shift register circuit 171 (FIG. 7 (a)).
9 is a detailed circuit diagram of the buffer circuit 175 (FIG. 7B).

The flip-flop circuit 173 is a three-stage CMOS circuit 173a, 173b, 17 connected in series.
3c is included. The first-stage CMOS circuit 173a whose power supply voltages are VDD and GND is a clocked inverter, and the n-type MOS transistor 17 is provided on the ground terminal side thereof.
4a are connected. This n-type MOS transistor 1
The inverted clock signal (-C
K) inputs. Power supply voltage V of the first stage CMOS circuit
A p-type MOS transistor 174b is connected to the DD terminal side. The clock signal CK is input to the gate electrode terminal of the p-type MOS transistor 174b.

The input of the first-stage CMOS circuit 173a is connected to the input terminal D of the entire shift register circuit 171. The CMOS circuit 173b of the second stage is an inverter, and its input is the CMOS circuit 17 of the first stage.
It is connected to the output terminal of 3a. Second stage CMOS
The output of the circuit 173b is connected to the input terminal which is the third stage clocked inverter.

An n-type MOS transistor 174c is connected to the ground terminal side of the third stage CMOS circuit 173c. A clock signal (CK) is input to the gate of the n-type MOS transistor 174c. CM of the third stage
On the power supply voltage VDD terminal side of the OS circuit 173c, a p-type M
The OS transistor 174d is connected. p-type MO
The inverted clock signal (-CK) is input to the gate of the S transistor 174d.

The input terminal of the third-stage CMOS circuit 173c is connected to the output terminal Q of the entire flip-flop circuit 173. Furthermore, the CMOS circuit 17 of the third stage
The input terminal of 3c is connected to the shift register circuit 17 of the second stage.
1 is connected to the input terminal D. Third stage CMOS
The output of the circuit 173c is the CMOS circuit 173 of the first stage.
It is connected to a line connecting the output of a and the input of the second-stage CMOS circuit 173b.

FIG. 7B shows details of the circuit on the p output side of the buffer circuit 175.

As shown in FIG. 7B, the buffer circuit 175 on the p output side is a CMOS inverter circuit 176.
It is configured by a series connection of five stages a, 176b, 176c, 176d, 176e. The input of the buffer circuit 175 is the flip-flops 173 shown in FIG.
Connected to the output Q of. P of the buffer circuit 175
The output is connected to the control terminal of the analog switch 153 along with the branched n output (FIG. 6).

Input terminal D of flip-flop circuit 173
When a signal is input to the output signal Q, the output signal Q is output according to the clock signal CK and the inverted signal (-CK) of the clock signal. Output Q of flip-flop circuit 173 of each stage
Controls each analog switch 151 through the output buffer circuit 175. The output signal Q of each stage of the flip-flop circuit 173 is output to the input D of the next stage.

As shown in FIG. 1 to No. 24 analog switches 151 up to 24 are
Two TFTs each (a p-type TFT and an n-type TFT), for a total of 48 TFTs. The 24 analog switches 151 share an output signal for one stage of the shift register (for example, output 1, two polarities of p and n).

More specifically, the n output of the shift register is 2 via the analog switch control signal line 181a.
The gate electrodes of all n-type TFTs of the four analog switches are connected. The p output of the shift register is connected to the gate electrodes of all p-type TFTs of the 24 analog switches via the analog switch control signal line 181b.

The circuit operation will be described with reference to FIG.

The control signal from the shift register 173 of one stage is sent to 24 analog switches 151 (for example, N
o. 1 to No. ON / OFF of 24 analog switches up to 24) is controlled at the same time. 2 at the same timing by the control signal from the shift register 173 of one stage.
The four analog switches 151 are turned on at the same time, and data is written to the (8 for each RGB) sub-pixels via the signal line 11. This is a so-called dot-sequential writing method of dividing 8 data.

Specifically, in the liquid crystal display device, the following circuit operation is performed.

The scanning line driving circuit C1 selects one scanning line 15, and the pixel TF whose gate is connected to the scanning line 15 is selected.
At the time when all of T25 are turned on, two of the n terminal and the p terminal of the output buffer 175 connected to the first-stage flip-flop circuit 173 of the shift register circuit 171 are connected.
By the analog switch control signal output from the two outputs 1, No. 1 to No. 24 p-type TFTs and 24 n-type T's included in up to 24 analog switches 151
The FT's turn on at the same time.

When the analog switch 151 is turned on,
The video signal line 17 is transmitted through the pixel TFT 25 which is already in a conductive state by the signal from the scanning line 15 of the display section B.
Among these, charges are supplied to each pixel cell (the liquid crystal cell 23 and the storage capacitor 27) corresponding to the contents of each display signal from R1 to R8, G1 to G8, and B1 to B8, and image information is supplied to the pixel. Write.

The shift register circuit 171 sequentially outputs the control signals from the first stage to the 100th stage, and No. 1 to N
The analog switches 151 up to 2400 are sequentially turned on. The video signal (display signal) from the video signal line 17 is divided into 24 pixels per one-stage flip-flop circuit 173, and finally No. 1 to N
The data is transferred to sub-pixels up to 2400.

When the scanning line driving circuit C1 selects the next scanning line 15, the pixel TFTs 25 that have been selected until then are
It becomes non-conductive. The liquid crystal cell 23 and the storage capacitor 27 are
150 scanning lines 1 electrically disconnected from the signal line 11
During one horizontal period in which 5 is sequentially scanned, the supplied image information is held until the next scan.

An image is displayed by sequentially repeating the operation described above.

The operating speed of the shift register in the signal line driving circuit C2 is 4.88 MHz, which is higher than that of the shift register in the scanning line driving circuit.

FIG. 8 shows a cross section of a peripheral portion of a liquid crystal display device including a signal line drive circuit corresponding to the cross sectional view taken along the line VIIIa-VIIIb of FIG. A polysilicon TFT can be used as the peripheral circuit TFT 85. The structure of the display unit B is the same as the sectional view taken along the line IVa-IVb of FIG. 1 shown in FIG.

FIG. 8 shows a signal line drive circuit C2 formed on the first transparent substrate 31 and using the polycrystalline TFT 85 as a semiconductor active element. In the structure of FIG. 8, the light shielding film that shields the signal line driving circuit C2 above the signal line driving circuit C2 (on the side of the second transparent substrate 51) is not a black matrix (BM), that is, a conductive light shielding film,
It is formed of an insulating black resin film 201. The insulating black resin film 201 is preferably the color filters 61, 6
It has a thickness approximately equal to 3,65.

On the second transparent substrate 51 on the display section B side,
In order to prevent light leakage between pixels and improve the color display characteristics, the black matrix (BM) 1, so that it partially overlaps the color filters 61, 63, 65.
1, 1, ... Are provided. The black matrix extends over the peripheral circuit C2, and the insulating black resin film 20
Both 1 and 1 partially overlap. This overlap forms a continuous light-shielding structure, which improves the light-shielding property.

As a material for forming the resin-based insulating black resin film 201, polyimide containing a black color pigment is preferably used. As another material, an acrylic or epoxy resin mixed with a black color pigment may be used. If a photosensitive resin is used, the black resin film can be patterned by the exposure and development processes without separately forming a photoresist film.

The black resin film 201 shields light (mainly visible light) incident on the signal line peripheral circuit C2 from the second transparent substrate 5 side. The continuous light-shielding structure of the black matrix 1 and the black resin film 201 exhibits sufficient light-shielding performance even for obliquely incident light.

The light-shielding structure arranged near the signal line peripheral circuit C2 is only the black resin 201, and the parasitic capacitance formed by the black resin film 201 as an insulator and the TFT 85 of the peripheral circuit C2 is made extremely small. be able to. Therefore, even if the light shielding structure is provided, the operating speed of the peripheral circuit C2 is unlikely to be slowed down due to its parasitic capacitance.

Next, a method of manufacturing the liquid crystal display device will be described. As a method for manufacturing the liquid crystal display device, a general method for manufacturing an active matrix type liquid crystal display device described below is used.

A method of manufacturing the display section B and the peripheral circuit section C on the first transparent substrate side when the top gate type TFT is used as a semiconductor active element will be described below.

FIG. 16 is a cross section showing an example of a liquid crystal display device in which a top gate type TFT having a structure similar to that shown in FIG. 3B is used for both a pixel TFT and a peripheral circuit TFT. It is a figure.

FIG. 16 shows the structure on the first transparent substrate side 31 side.

On the first transparent substrate 31, a polysilicon film 35, a gate insulating film made of SiO ₂ , and a gate electrode G are formed.
Are sequentially formed. In the polysilicon layer on both sides of the gate, source and drain regions are formed by high-concentration layers 37, 37 formed by ion-implanting n-type impurities or p-type impurities.

A first interlayer insulating film 41a is formed on the first transparent substrate. Contact holes for forming contacts with the source, the gate and the drain are opened in the first interlayer insulating film 41a. The source electrode S, the gate electrode G, and the drain electrode D made of Ti / Al / Ti are connected to the first interlayer insulating film 41a through the contact holes.
Formed on.

A second interlayer insulating film 41b is formed on the first interlayer insulating film 41a.

On the drain electrode D of the pixel TFT 25,
A contact hole is formed to open the second interlayer insulating film 41b.

A pixel electrode 45 made of ITO is formed on the second interlayer insulating film 41b. The pixel electrode 45 is the drain electrode D of the pixel TFT 25 of the display section B.
Connected with.

The peripheral circuit TFT of the peripheral circuit section C includes an n-type TFT 85a and a p-type TFT 85b. Since the high-concentration layers 37, 37 are formed by ion implantation, the n-type TFT 85a and the p-type T 85 are formed on the same substrate.
It is easy to form the FT85b. Since a complementary circuit (CMOS circuit) can be formed, the peripheral circuit C can be operated at high speed and low power consumption.

Detailed manufacturing steps of the liquid crystal display device will be described below.

An amorphous silicon film of 1000 angstrom is deposited on the first transparent substrate 31 by the CVD method.

The amorphous silicon film is crystallized by using the excimer laser method. By this crystallization process, the amorphous silicon film becomes the polycrystalline silicon film 35.

The polycrystalline silicon film 35 is processed into an island shape by an ordinary photolithography process and etching process to form a channel layer for TFT.

The gate insulating film 33 is formed by PECVD.
To form. The gate insulating film 33 is processed into a predetermined shape. Sputtering may be used instead of PECVD.

In order to reduce the contact resistance of the source electrode and the drain electrode formed on both sides of the gate electrode of the TFT, the polycrystalline silicon layer 37 doped with an impurity concentration higher than that of the channel layer is channeled by ion implantation. It is formed on both sides of the polycrystalline silicon film 33 for use. here,
The n-type TFT 85a and the p-type TFT 85 are implanted into the peripheral circuit section C by ion implantation using different doping ions.
b is formed.

A first interlayer insulating film 41a is formed on the first transparent substrate 31.

Contact holes for forming gate and source / drain contacts are opened in the first interlayer insulating film 41a.

Ti / Al / through the contact hole
The source electrode S, the gate electrode G, and the drain electrode D made of Ti are formed on the first interlayer insulating film 41a.

An interlayer insulating film 41b formed of an oxide film is deposited on the entire surface of the first transparent substrate 31. A nitride film or a polyimide film may be used instead of the oxide film.
A contact hole is opened in the interlayer insulating film 41b, and ITO is
A pixel electrode 45 made of (indium tin oxide) is formed.

Through the above steps, the top gate type TFT
Is completed.

A method of manufacturing the pixel structure on the second transparent substrate 51 side provided with the color filter and the second common electrode will be described with reference to FIGS.

On the second transparent substrate 51, the thickness 200
By forming a 0 angstrom Cr film and performing etching using a mask having a predetermined shape, the pixel TFT 25 of the display section B and the first peripheral circuit C1 of the peripheral circuit section C are formed.
Black matrix (BM) that is a light-shielding film that covers the top
1, 1, 1 ...

On the second transparent substrate 51, the thickness 1.
Apply 5 μm red color resist, dry, expose,
By the usual photoresist process including development, the display area B
Then, the red color filter 61 is formed.

The green color filter 63 and the blue color filter 65 are formed by the same process as described above. The color filters 61, 63, 65 are formed by overlapping the ends with the black matrix (BM) 1, 1, 1.

The second peripheral circuit C of the peripheral circuit section C
A black resin film is applied to the inside of the second transparent substrate 51 so as to cover the upper surface of the second transparent substrate 51, and an insulating black light-shielding film 201 is formed by a predetermined pattern forming process.

A flattening film made of resin for protecting the color filters 61, 63, 65 and the insulating black light-shielding film 201 and flattening the unevenness formed by the color filter and the insulating black light-shielding film 201. 73a is formed.

An ITO film having a thickness of 1000 Å is formed by a sputtering method, and then a common electrode 71 is formed by a predetermined pattern forming process.

An alignment film 75a made of polyimide or the like is formed so as to cover the common electrode 71.

Through the above steps, the structure on the second transparent substrate 51 side is completed.

Instead of the above steps, an insulating black light-shielding film or a conductive light-shielding film may be formed on the outside of the second transparent substrate 51 to cover the second peripheral circuit. It is also possible to form an insulating black light-shielding film on the first transparent substrate side to cover the second peripheral circuit.

A process of forming the liquid crystal display device by laminating the first transparent substrate 31 and the second transparent substrate 51 manufactured as described above will be described below.

If necessary, the alignment films 75a and 75b formed on the first transparent substrate 31 and the second transparent substrate 51 may be formed.
Heat and cure.

The alignment films 75a and 75b are buffed (buf).
f) Perform a rubbing process of rubbing in one direction with a cloth. By this step, an alignment structure is formed on the alignment films 75a and 75b.

On the first transparent substrate 31, spherical spacers made of polymer, glass, silica or the like are dispersed.

A sealing resin is applied to the outer peripheral portion of the peripheral circuit portion C of the first transparent substrate 31 by a dispenser. The seal is obtained by stacking the second transparent substrate 51 on the first transparent substrate 31 and heating and pressing to cure the sealing resin. The first transparent substrate 31 and the second transparent substrate 51 are attached to each other with a sealing material. The spherical spacer keeps the distance between both substrates at a predetermined value.

After the liquid crystal material E is injected into the liquid crystal housing space 81 from a liquid crystal injection port (not shown), the liquid crystal injection port is sealed.

An insulating black resin film 201 is provided on the signal line drive circuit C2. The insulating black light shielding film 201 shields the light incident on the signal line drive circuit C2 from the second transparent substrate 51 side. It is possible to reduce the probability of malfunction of the semiconductor active element used in the signal line drive circuit C2, that is, the peripheral circuit TFT 85 due to light. Therefore, the signal line drive circuit C2 operates stably regardless of the presence or absence of incident light, and the operation of the liquid crystal display device is also stabilized.

The relative permittivity (ε) of the liquid crystal is about 5-11. The gap between the first transparent substrate and the second transparent substrate is about 4-5 microns. Therefore, when the signal line drive circuit C2 is operated at 4.88 MHz, there is a problem that the circuit operation speed is reduced due to the parasitic capacitance of the peripheral circuit TFT 85.

When a metal BM is used as the light-shielding film of the signal line drive circuit C2 that should operate at high speed, the parasitic capacitance formed between the TFT and BM hinders the high speed operation of the signal line drive circuit C2. By using the insulating light-shielding film, it is possible to prevent an increase in parasitic capacitance and prevent a decrease in operating speed.

In the liquid crystal display device of the present embodiment, 1
It is also possible to form the light shield with a thin insulating black light-shielding film having a thickness of micron or less.

Outside the second transparent substrate 51 (on the side opposite to the first transparent substrate 31) on the peripheral circuit, especially on the signal line drive circuit.
A method of shielding light by covering with a frame (bezel) 211 arranged on the outer periphery of the liquid crystal display device provided in the above can be considered. However, the light-shielding structure using a wide frame hinders an increase in the screen size of the liquid crystal display device (narrowing the frame size of the liquid crystal display device).

A carbon black resin can be used as a light shield for shielding the signal line drive circuit (second peripheral circuit).

Carbon resin has an electric conductivity of 10
There is a material exhibiting a semi-insulating property of 6 Ωm or less. When such a semi-insulating carbon resin is used, the parasitic capacitance due to the light-shielding film becomes larger than that when an insulating light-shielding film is used. However, the light-shielding film using the semi-insulating carbon resin has a better light-shielding property than the insulating light-shielding film. It is preferably used when it is necessary to prioritize the light shielding property in consideration of the parasitic capacitance.

FIG. 9 shows a modification of the liquid crystal display device according to the first embodiment of the invention.

In the liquid crystal display device shown in FIG. 9, the insulating black resin film 2 provided inside the second transparent substrate 51.
01, an insulating black resin film 301 that covers the second peripheral circuit C2 is also provided on the first transparent substrate 31 side.

Light-shielding film 30 provided on the first transparent substrate side
1 is also provided so as to cover the upper side of the signal line drive circuit C2.

In the liquid crystal display device shown in FIG. 9, insulating light-shielding films 201 and 301 are formed above the signal line drive circuit C2 as double light-shielding films. Therefore, the light-shielding property of the signal line drive circuit C2 is improved, and the operations of the peripheral circuits, particularly the signal line drive circuit, are more stable than those of the liquid crystal display device according to the first embodiment.

FIG. 10 shows a liquid crystal display device according to the second embodiment of the present invention. In the second embodiment,
The same parts as those of the liquid crystal display device according to the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

FIG. 10 is a cross-sectional view showing the structure of the peripheral portion of the liquid crystal display device, and a signal line drive circuit (second peripheral circuit).
Includes C2. This drawing corresponds to FIG. 8 in the liquid crystal display device according to the first embodiment.

In the liquid crystal display device shown in FIG. 10,
A light shielding film 401 that covers the signal line drive circuit C2 is provided outside the second transparent substrate 51 (on the side opposite to the direction in which the first transparent substrate 31 exists), that is, outside the panel of the liquid crystal display device. . Also in this liquid crystal display device, the light shielding film 4
01 is the signal line drive circuit C from the outside of the second transparent substrate 51.
Blocks light that enters the 2 side.

The second transparent substrate 51, which is a thick insulator, is interposed between the signal line drive circuit C2 and the light shielding film 401. Therefore, a semi-insulating carbon black resin can be used instead of the insulating black resin used in the first embodiment, and a conductive light-shielding film can also be used. The degree of freedom in selecting the material of the light-shielding film is increased, and, for example, when a semi-insulating carbon black resin or a conductive light-shielding film is used, the light-shielding property is higher than that when an insulating light-shielding film is used. It has the effect of further improving.

Since the panel outside light-shielding body 401 is formed outside the second transparent substrate 51, a light-shielding film is formed inside the narrow gap between the first transparent substrate 31 and the second transparent substrate 51. The light-shielding film forming process becomes easier than the case. As the light-shielding film forming process, before the panel assembling process,
The outside-panel light-shielding film 401 is previously formed on the outside of the second transparent substrate 51.
It is also possible to form. It is also possible to form the outside-panel light-shielding film 401 after the panel assembly process is completed.

Therefore, as compared with the liquid crystal display device according to the first embodiment, the degree of freedom in the process of assembling the device is increased.

As the outside-panel light-shielding film 401, it is possible to use resin-based black ink other than the black resin film. When the light-shielding film is applied on the second transparent substrate 51 using the resin-based black ink, it is also possible to draw on the second transparent substrate 51 using, for example, an oil-based black felt-tip pen.

If a black felt-tip pen is used for drawing, it becomes easy to form a light shield at a desired position on the second transparent substrate 51. When the light-shielding film is formed by applying the resin-based black ink, the light-shielding film can be formed by a simpler method as compared with the liquid crystal display device according to the first embodiment or the second embodiment. Further, the light blocking body may be formed using a light blocking adhesive tape, a light blocking black film, or the like.

It is also possible to form the black light-shielding film by a printing technique using an inkjet method or the like. The method using the printing technique is excellent in mass productivity and economical efficiency in forming the light shielding film.

If the above method is adopted, the thickness of the second transparent substrate 51 is about 0.7 μm, and the gap between the first and second transparent substrates 31 and 51 is about 5 μm. There is a possibility of stray light due to incidence.

FIG. 11 shows a first modification of the liquid crystal display device according to the second embodiment.

In the liquid crystal display device shown in FIG. 11,
As a light-shielding film that covers the signal line drive circuit C2, it faces the outside-panel light-shielding film 401 with the second transparent substrate 51 sandwiched not only outside the second transparent substrate 51 but also inside the second transparent substrate 51. An insulating light-shielding film 405 is provided at the position.
The in-panel light-shielding film 405 also covers the upper part of the signal line drive circuit C2.

Since the double light-shielding film is formed above the signal line drive circuit C2, the light-shielding property is improved and the possibility of stray light due to oblique incidence is reduced.

FIG. 12 shows a second modification of the liquid crystal display device shown as the second embodiment.

In the liquid crystal display device shown in FIG. 12, the light shielding film 401 outside the panel and the insulating light shielding film 201 inside the panel are
It is provided at a different position when viewed from above. For example, the outside-panel light-shielding film 401 covers the shift register circuit portion (control circuit B ′) of the signal line drive circuit C2, and the inside-panel light-shielding film 2 formed of an insulating black resin.
Reference numeral 01 covers the control circuit A ′ (analog control switch section). A conductive light-shielding film (BM) 1 is provided on the control circuit C ′ (output puffer section). The combination of the light-shielding structure and the circuit is not limited to the above-described one, and various changes can be made.

In different circuit parts of the signal line drive circuit, a light shielding film having a different structure or position is appropriately provided according to the characteristics of each circuit part, for example, the light shielding property and the operating speed of the circuit.

With this structure, the degree of freedom in the manufacturing process is increased, and the positional relationship between the light-shielding film and the signal line drive circuit can be finely designed to optimize the high-speed performance of the peripheral circuits and the light-shielding performance of the peripheral circuits. can do.

13 and 14 show a liquid crystal display device according to the third embodiment of the present invention.

In the third embodiment, the first and second
The same parts as those of the liquid crystal display device according to the embodiment are designated by the same reference numerals and the description thereof will be omitted.

FIG. 13 is a plan view of the overall structure of the liquid crystal display device. This plan view corresponds to FIG. 1 in the liquid crystal display device according to the first embodiment.

As shown in FIG. 13, the liquid crystal display device includes a display portion B and a peripheral circuit portion C. The peripheral circuit section C includes a scanning line drive circuit (first peripheral circuit) C1 and a signal line drive circuit (second peripheral circuit) C2.

A black matrix (BM) light shielding film 1 made of Cr is provided on the scanning line driving circuit C1. A light shielding film 503 made of an insulating black resin is provided on the signal line driving circuit C2.

FIG. 14 is a sectional view taken along line Xa-Xb in FIG. 13, and is a view corresponding to FIG. 8 in the liquid crystal display device according to the first embodiment.

In the liquid crystal display device shown as the third embodiment, as shown in FIG. 14, a seal member 50 for sealing the liquid crystal material accommodation space 81 for accommodating the liquid crystal material E.
1 is different from the liquid crystal display device according to the first embodiment.

In the liquid crystal display device according to the third embodiment, the liquid crystal display device according to the first embodiment is provided outside the scanning line driving circuit C1 arranged on the short side of the rectangular display portion B. Similarly, a sealing material 501 is provided.
The sealing material 503 on the signal line drive circuit C2 side, which is arranged on the long side of the rectangular display portion B, is provided so as to cover the upper portion of the signal line drive circuit C2. Seal material 501, 50
3 surrounds the outer periphery of the peripheral circuit section C in a loop shape.

In the step of forming the seal member, first, the normal resin seal member 501 is attached to the scanning line drive circuit C1.
It is provided outside of. Next, the signal line drive circuit C2 is covered with a light-shielding black resin seal member 503.

In the liquid crystal display device according to this embodiment, the seal members 501 and 503 seal the liquid crystal material E filled in the liquid crystal storage space 81. Further, the seal member 503 formed of the insulating black resin is used as the signal line driving circuit C2.
Cover the top and block light. The seal member 503 formed of an insulating black resin seals the liquid crystal material E and shields the peripheral circuit polycrystalline TFT 85 included in the signal line drive circuit C2 from light, thereby preventing the leak current of the TFT caused by light. Suppress.

In the liquid crystal display device according to the present embodiment, the light shielding film 503 between the first transparent substrate 31 and the second transparent substrate 51 is made of resin. Since the relative permittivity ε of the resin is about 3, it is smaller than the relative permittivity of the liquid crystal material E (ε = about 5 to 11). Therefore, as compared with the case where the liquid crystal material is filled between the first transparent substrate and the second transparent substrate, the parasitic capacitance associated with the signal line drive circuit C2 is reduced.

Further, the space efficiency is improved by using the sealing material and the light shielding film as well. It is possible to further narrow the frame of the liquid crystal display device.

A sealing member arranged outside the scanning line driving circuit and a sealing member arranged so as to cover the signal line driving circuit may be integrated, and a light shielding sealing member may be used as both sealing members. It is possible to simplify the manufacturing process of the seal member.

FIG. 15 shows a portable electronic device according to the fourth embodiment of the present invention. This portable electronic device (personal computer) uses the liquid crystal display device described in the first to third embodiments.

The personal computer shown in FIG. 15 uses a liquid crystal display device A including a display section B and a peripheral circuit section C.

Other components of the personal computer are the same as those of a general personal computer.
That is, a central processing unit (CPU) (not shown) is provided in the box 601 which is integrated with the liquid crystal display device A when folded.
And a memory circuit are stored. On the side of the box 601,
An insertion port 603 of the external storage device is provided, and an input unit (keyboard) 605 is arranged on the upper surface of the box body 601.

In the personal computer using the liquid crystal display device according to this embodiment, the peripheral circuit section C is integrally formed on the first transparent substrate. The frame of the liquid crystal display device A can be made narrower than that of the liquid crystal display device to which the peripheral circuit section C is externally attached. When the dimensions of the main body are the same, the display B can be enlarged. Since the polycrystalline TFT is used as the active semiconductor element of the signal line driving circuit, the high speed of the personal computer can be maintained. Since the peripheral circuit portion, particularly the second peripheral circuit, is covered with the insulating light-shielding film, it is possible to prevent malfunction of the polycrystalline TFT due to light incidence.

The embodiments of the present invention have been described above, but the present invention is not limited to these.

For example, the outside-cell light-shielding film may be provided directly on the second transparent substrate or indirectly on the polarizing plate provided on the second transparent substrate.

As for BM, a single-layer or multi-layer metal film can be used.

It is also possible to use all the light shielding films on the peripheral circuit as insulating light shielding films.

Although glass substrates are used as the first and second transparent substrates, quartz or organic films may be used. In the case of a reflective liquid crystal display device, the first substrate does not need to be transparent. A ceramic substrate, a silicon substrate covered with an insulating film, or the like can also be used.

In the case of a reflection type display panel, the ITO electrode on the first transparent substrate side can be replaced with another metal material such as Al.

In the case of a monochrome display panel, the color filter in the pixel section is unnecessary.

Instead of the flattening film on the substrate, silicon nitride or silicon oxide may be used. On the second transparent substrate side,
The flattening film may not be provided.

The liquid crystal display device of the present invention is suitable not only as a display device for a personal computer but also for a portable communication device, a television, an industrial monitor device and the like.

It will be apparent to those skilled in the art that various other modifications, improvements, combinations and the like can be made.

[0180]

EFFECTS OF THE INVENTION In the peripheral circuit integrated type liquid crystal display device, by providing an insulating light-shielding film that covers at least a part of the peripheral circuit thin film transistors forming the signal line drive circuit, malfunction of the TFT due to light incidence can be prevented. Prevent,
In addition, it is possible to prevent the parasitic capacitance from increasing and maintain the high speed of the peripheral circuit.

[Brief description of drawings]

FIG. 1 is a plan view of a liquid crystal display device according to a first embodiment of the present invention.

FIG. 2 is an equivalent circuit diagram of the liquid crystal display device according to the first embodiment of the present invention.

FIG. 3 is a cross-sectional view of a portion centering on a pixel TFT in the liquid crystal display device according to the first embodiment of the present invention,
(A) shows the case where a bottom gate TFT is used, and (b) shows the case where a top gate TFT is used.

FIG. 4 is a cross-sectional view of the liquid crystal display device according to the first embodiment of the present invention on the scanning line driving circuit side, which is taken along line IVa-IV of FIG.
A sectional view taken along the line b is shown.

FIG. 5 is a circuit diagram of the liquid crystal display device according to the first embodiment of the present invention, showing a circuit on a scanning line driving circuit side.

FIG. 6 is a circuit diagram of the liquid crystal display device according to the first embodiment of the present invention, showing a circuit on a signal line drive circuit side.

FIG. 7 is a circuit diagram of the liquid crystal display device according to the first embodiment of the present invention, showing a circuit on a signal line drive circuit side.
(A) is a circuit diagram of a flip-flop circuit forming a shift register, and (b) is a circuit diagram of a buffer circuit.

FIG. 8 is a cross-sectional view of a signal line drive circuit side of the liquid crystal display device according to the first embodiment of the present invention. VIIIa- in FIG.
A VIIIb line sectional view is shown.

9 is a cross-sectional view of a signal line drive circuit side, which is a modification of the liquid crystal display device according to the first embodiment of the present invention, showing V of FIG.
The IIIa-VIIIb sectional view taken on the line is shown.

10 is a cross-sectional view of the liquid crystal display device according to the second embodiment of the present invention on the signal line drive circuit side, and FIG.
The a-VIIIb sectional view is shown.

FIG. 11 is a cross-sectional view of a liquid crystal display device that is a first modification of the liquid crystal display device according to the second embodiment of the present invention, showing a cross section on the signal line drive circuit side.

12 is a cross-sectional view of a liquid crystal display device which is a second modification of the second embodiment of the present invention on the signal line drive circuit side, and is a cross-sectional view taken along the line VIIIa-VIIIb of FIG.

FIG. 13 is a plan view of a liquid crystal display device according to a third embodiment of the present invention.

14 is a cross-sectional view of the liquid crystal display device according to the third embodiment of the present invention on the signal line drive circuit side, and FIG.
The a-VIIIb sectional view is shown.

FIG. 15 is a perspective view of an electronic device using any one of the liquid crystal display devices according to the first to third embodiments of the present invention, showing the electronic device according to the fourth embodiment of the present invention. Show.

16 is a cross-sectional view showing a pixel portion and a peripheral circuit of the liquid crystal display device according to the first embodiment of the present invention, which is I in FIG.
A sectional view taken along the line Va-IVb is shown.

[Explanation of symbols]

A liquid crystal display B display C peripheral circuit C1 scanning line drive circuit C2 signal line drive circuit S source D drain G Gate E Liquid crystal material 1 Light-shielding film (BM) 5 Seal material 11 signal line 15 scan lines 21 pixels 23 Liquid crystal cell 25 pixel TFT 31 First transparent substrate 45 pixel electrode 51 Second transparent substrate (counter substrate) 71 common electrode 85 Peripheral circuit TFT 201 Insulating black resin 401 Outside panel light shield 501 sealing material 503 Light-shielding sealing material

Continuation of the front page (56) Reference JP-A-9-311342 (JP, A) JP-A-11-52328 (JP, A) JP-A-10-268288 (JP, A) JP-A-10-170935 (JP , A) JP-A-11-15021 (JP, A) JP-A-5-241124 (JP, A) JP-A-3-12635 (JP, A) JP-A-7-168151 (JP, A) JP-A-7-168151 (JP, A) 9-325347 (JP, A) JP-A-5-45668 (JP, A) JP-A-9-97909 (JP, A) Fukuihei 4-6030 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) G02F 1/136

Claims (7)

(57) [Claims] 1. A first substrate, a plurality of pixels formed on the first substrate and arranged in a matrix, a plurality of scanning lines extending along a row direction, and a column direction. And a plurality of signal lines extending along
One of the pixels is connected to each intersection of the scan line and the signal line, and each pixel is disposed on a display portion including a semiconductor active element and a pixel electrode, and on a row direction end portion of the first substrate. A first peripheral circuit including a semiconductor active element and including a scan line driving circuit for driving the scan line; and a semiconductor active element disposed on an end portion in the column direction of the first substrate and including the signal line. A second peripheral circuit including a signal line drive circuit for driving the liquid crystal, a transparent second substrate arranged to face the first substrate, and a liquid crystal sandwiched between the first and second substrates. A layer, an insulating black light-shielding film disposed above the circuit that requires relatively high speed among the first and second peripheral circuits, and above the circuit that does not require relatively high speed. And a conductive light-shielding film disposed in the liquid crystal display device. 2. The insulating black light shielding film is formed on the inner surface of the second substrate above the second peripheral circuit, and the conductive light shielding film is formed above the first peripheral circuit. The liquid crystal display device according to claim 1, which is formed on the inner surface of the second substrate. 3. The liquid crystal according to claim 2, further comprising another insulating black light-shielding film which is disposed on the inner surface of the first substrate and covers at least a part of the second peripheral circuit. Display device. 4. The liquid crystal display device according to claim 2, wherein at least a part of the insulating black light-shielding film also serves as a sealing material that seals the liquid crystal layer between the first and second substrates. 5. The insulating black light-shielding film is provided in a partial region above the second peripheral circuit, and the conductive light-shielding film is provided in another partial region above the second peripheral circuit. The liquid crystal display device according to claim 2. 6. The liquid crystal display device according to claim 5, further comprising an insulating black light-shielding film or a conductive light-shielding film provided on the outer surface of the second substrate. 7. A first substrate, a plurality of pixels formed on the first substrate and arranged in a matrix, a plurality of scanning lines extending along a row direction, and a column direction. And a plurality of signal lines extending along
One of the pixels is connected to each intersection of the scan line and the signal line, and each pixel is disposed on a display portion including a semiconductor active element and a pixel electrode, and on a row direction end portion of the first substrate. A first peripheral circuit including a semiconductor active element and including a scan line driving circuit for driving the scan line; and a semiconductor active element disposed on an end portion in the column direction of the first substrate and including the signal line. A second peripheral circuit including a signal line drive circuit for driving the liquid crystal, a transparent second substrate arranged to face the first substrate, and a liquid crystal sandwiched between the first and second substrates. A layer, an insulating black light-shielding film disposed above the circuit that requires relatively high speed among the first and second peripheral circuits, and above the circuit that does not require relatively high speed. And a liquid crystal display device including: a conductive light-shielding film; And electronic devices including;