JPH0243344B2 - - Google Patents
Info
- Publication number
- JPH0243344B2 JPH0243344B2 JP57161863A JP16186382A JPH0243344B2 JP H0243344 B2 JPH0243344 B2 JP H0243344B2 JP 57161863 A JP57161863 A JP 57161863A JP 16186382 A JP16186382 A JP 16186382A JP H0243344 B2 JPH0243344 B2 JP H0243344B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- mos transistor
- input
- node
- semiconductor memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
- H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57161863A JPS5951560A (ja) | 1982-09-17 | 1982-09-17 | 半導体メモリ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57161863A JPS5951560A (ja) | 1982-09-17 | 1982-09-17 | 半導体メモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5951560A JPS5951560A (ja) | 1984-03-26 |
| JPH0243344B2 true JPH0243344B2 (OSRAM) | 1990-09-28 |
Family
ID=15743388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57161863A Granted JPS5951560A (ja) | 1982-09-17 | 1982-09-17 | 半導体メモリ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5951560A (OSRAM) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5846175B2 (ja) * | 1981-07-22 | 1983-10-14 | 株式会社東芝 | プログラム可能回路 |
| US4480199A (en) * | 1982-03-19 | 1984-10-30 | Fairchild Camera & Instrument Corp. | Identification of repaired integrated circuits |
-
1982
- 1982-09-17 JP JP57161863A patent/JPS5951560A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5951560A (ja) | 1984-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7629802B2 (en) | Semiconductor device including fuse and method for testing the same capable of suppressing erroneous determination | |
| US6765404B2 (en) | On-chip substrate regulator test mode | |
| TW200400579A (en) | Semiconductor device and test method for the same | |
| JPS60170100A (ja) | Ｃｍｏｓ半導体集積回路 | |
| US4725980A (en) | Read only memory circuit | |
| US6597234B2 (en) | Anti-fuse circuit and method of operation | |
| JPH01251398A (ja) | 集積半導体テモリの冗長デコーダ | |
| JP2006012211A (ja) | 半導体集積回路 | |
| JPH0638320B2 (ja) | メモリ回路 | |
| US7263759B2 (en) | Methods of manufacturing and testing bonding wires | |
| US5153458A (en) | Code setting circuit with fusible thin film resistors | |
| JPH03290900A (ja) | 半導体メモリ装置 | |
| US6606264B2 (en) | Programmable circuit and its method of operation | |
| JPH0243344B2 (OSRAM) | ||
| JP2003023085A (ja) | 半導体集積回路 | |
| US6060899A (en) | Semiconductor device with test circuit | |
| JP2003017569A (ja) | 半導体集積回路 | |
| JPH08222693A (ja) | 半導体装置及びその製造方法 | |
| US5661689A (en) | Semiconductor device incorporating fuse-type roll call circuit | |
| JPS59157899A (ja) | 冗長ビツトの検出手段を有するメモリ−装置 | |
| JP2881885B2 (ja) | 半導体メモリ装置 | |
| JP2001035193A (ja) | 半導体記憶装置 | |
| JP3644168B2 (ja) | 半導体集積回路 | |
| JP3745875B2 (ja) | 半導体メモリ装置のバーンインストレス制御回路 | |
| JPS5968965A (ja) | 半導体メモリ |