JPH0241868Y2 - - Google Patents
Info
- Publication number
- JPH0241868Y2 JPH0241868Y2 JP3590088U JP3590088U JPH0241868Y2 JP H0241868 Y2 JPH0241868 Y2 JP H0241868Y2 JP 3590088 U JP3590088 U JP 3590088U JP 3590088 U JP3590088 U JP 3590088U JP H0241868 Y2 JPH0241868 Y2 JP H0241868Y2
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- resistors
- polycrystalline
- resistance
- logic circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 description 26
- 239000010410 layer Substances 0.000 description 18
- 239000012535 impurity Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 6
- 229910021339 platinum silicide Inorganic materials 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3590088U JPH0241868Y2 (en, 2012) | 1988-03-17 | 1988-03-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3590088U JPH0241868Y2 (en, 2012) | 1988-03-17 | 1988-03-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63145345U JPS63145345U (en, 2012) | 1988-09-26 |
| JPH0241868Y2 true JPH0241868Y2 (en, 2012) | 1990-11-08 |
Family
ID=30845812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3590088U Expired JPH0241868Y2 (en, 2012) | 1988-03-17 | 1988-03-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0241868Y2 (en, 2012) |
-
1988
- 1988-03-17 JP JP3590088U patent/JPH0241868Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63145345U (en, 2012) | 1988-09-26 |
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