JPH023629Y2 - - Google Patents
Info
- Publication number
- JPH023629Y2 JPH023629Y2 JP1984097571U JP9757184U JPH023629Y2 JP H023629 Y2 JPH023629 Y2 JP H023629Y2 JP 1984097571 U JP1984097571 U JP 1984097571U JP 9757184 U JP9757184 U JP 9757184U JP H023629 Y2 JPH023629 Y2 JP H023629Y2
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- lead
- lead frame
- wire
- horn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 description 7
- 239000008188 pellet Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【考案の詳細な説明】
産業上の利用分野
この考案はリードフレームにマウントされた半
導体ペレツトの電極とリードフレームのリードな
どを金属細線にて電気的接続する超音波方式のボ
ンデイング装置に関する。[Detailed Description of the Invention] Industrial Application Field This invention relates to an ultrasonic bonding device for electrically connecting electrodes of a semiconductor pellet mounted on a lead frame and leads of the lead frame using thin metal wires.
従来の技術
ICなどの半導体装置は一般にリードフレーム
をペレツトマウント工程、ワイヤボンデイング工
程、樹脂モールド工程などの各工程に順次送り製
造される。このワイヤボンデイング工程では金線
やアルミニウム線の金属細線をリードフレーム上
にマウントされた半導体ペレツトの電極とリード
フレームのリード遊端部に順次押し付け、押圧と
同時に超音波振動を加えて接合させる超音波ボン
デイング装置が通常使用される。例えばIC用リ
ードフレームにワイヤボンデイングする超音波ボ
ンデイング装置の従来の一般例を第３図乃至第５
図を参照して以下説明する。2. Description of the Related Art Semiconductor devices such as ICs are generally manufactured by sequentially sending a lead frame through various processes such as a pellet mounting process, a wire bonding process, and a resin molding process. In this wire bonding process, a thin metal wire such as a gold wire or an aluminum wire is sequentially pressed against the electrode of a semiconductor pellet mounted on a lead frame and the free end of the lead of the lead frame. Bonding equipment is commonly used. For example, conventional general examples of ultrasonic bonding equipment for wire bonding to IC lead frames are shown in Figures 3 to 5.
This will be explained below with reference to the figures.
第３図及び第４図において、１は帯状のリード
フレーム、２はリードフレーム１の搬送路で、リ
ードフレーム１は搬送路２上を長手方向に間欠送
りされる。３は搬送路２の一側方に配置されたボ
ンデイング装置で、リードフレーム送り方向Ｘを
この方向Ｘと直交するＹ方向に間欠動するＸ−Ｙ
テーブル４と、Ｘ−Ｙテーブル４上に設置された
ボンデイング装置本体部５と、ボンデイング装置
本体部５から搬送路２側のＹ方向に延びるホーン
６と、ホーン６の先端部に装着されて下方に延び
るキヤピラリ７と、キヤピラリ７に長尺なワイヤ
８を供給するワイヤ送り機構９とで構成される。
ボンデイング装置本体部５はホーン６を上下揺動
可能に保持してホーン６に軸方向の超音波振動を
加えるものであり、ホーン６は加えられた超音波
振動をキヤピラリ７に伝達する。 In FIGS. 3 and 4, 1 is a strip-shaped lead frame, 2 is a conveyance path for the lead frame 1, and the lead frame 1 is intermittently fed along the conveyance path 2 in the longitudinal direction. 3 is a bonding device disposed on one side of the conveyance path 2, and is an X-Y bonding device that moves intermittently in the lead frame feeding direction
A table 4, a bonding device main body 5 installed on the X-Y table 4, a horn 6 extending from the bonding device main body 5 in the Y direction on the transport path 2 side, and a horn 6 attached to the tip of the horn 6 and pointing downward. It is comprised of a capillary 7 that extends to , and a wire feeding mechanism 9 that supplies a long wire 8 to the capillary 7 .
The bonding device main body 5 holds the horn 6 so as to be able to swing up and down and applies ultrasonic vibrations in the axial direction to the horn 6, and the horn 6 transmits the applied ultrasonic vibrations to the capillary 7.
リードフレーム１は複数のICペレツトマウン
ト用ランド部１０，１０……と各ランド部１０，
１０……の近傍から延びる複数のリード１１，１
１……をタイバ１２，１２……で一連に一体化し
たもので、各ランド部１０，１０……上には前工
程でICペレツト１３，１３……がマウントされ
る。リードフレーム１のランド部１０がキヤピラ
リ７の下方に間歇送りされるとボンデイング装置
３が作用して、ランド部１０上のICペレツト１
３の各電極とその近くのリード１１の遊端部１
１′，１１′……上とにキヤピラリ７が順次に下降
してワイヤ先端部を押し付け超音波振動を加えて
ボンデイングしていく。 The lead frame 1 has a plurality of IC pellet mount land parts 10, 10... and each land part 10,
A plurality of leads 11,1 extending from the vicinity of 10...
1... are integrated in a series with tie bars 12, 12..., and IC pellets 13, 13... are mounted on each land portion 10, 10... in the previous process. When the land portion 10 of the lead frame 1 is intermittently fed below the capillary 7, the bonding device 3 acts to remove the IC pellet 1 on the land portion 10.
3 and the free end 1 of the lead 11 near it.
1', 11'... The capillary 7 sequentially descends and presses the tip of the wire, applying ultrasonic vibration to perform bonding.
考案が解決しようとする問題点
リードフレーム１の各リード１１，１１……の
全体形状は様々であるが、ワイヤボンデイングさ
れる遊端部１１′，１１′……はランド部１０，１
０……の近傍でＸ，Ｙ方向のいずれかに方向が揃
えられているのか通常であり、そのため次の問題
があつた。Problems to be Solved by the Invention Although the overall shapes of the leads 11, 11... of the lead frame 1 vary, the free ends 11', 11'... to which wire bonding is performed
It is normal for the directions to be aligned in either the X or Y direction in the vicinity of 0..., and this caused the following problem.
いま第５図に示すようにリード遊端部がＸ方向
に延びるリードをＸリード１１ａ、Ｙ方向に延び
るリードをＹリード１１ｂとする。この両Ｘ，Ｙ
リード１１ａ，１１ｂの各遊端部１１a′，１１
b′はワイヤボンデイング時に下面が受け台（図示
せず）で支持されるが、横に対しては自由状態で
あるため、両Ｘ，Ｙリード遊端部１１a′，１１
b′は直交する方向からの外力に対して不安定で、
この外力に追従して変動し易い、従つて、上記ボ
ンデイング装置３を使用した場合、Ｙリード遊端
部１１b′上にワイヤ８をボンデイングする時の超
音波振動方向はＹリード遊端部１１b′の外力に対
して比較的安定したＹ方向であるため、この時の
ワイヤボンデイングは強度大で行える。一方Ｘリ
ード遊端部１１a′上にワイヤ８をボンデイングす
る場合はＸリード遊端部１１a′に対し直交する横
方向（Ｙ方向）に超音波振動が加わるため、この
振動力に追従する如くＸリード遊端部１１a′が横
変動を起して、超音波エネルギーの伝達効率が悪
くなり、そのためボンデイング強度がばらつき易
かつた。 As shown in FIG. 5, a lead whose free end extends in the X direction is called an X lead 11a, and a lead whose free end extends in the Y direction is called a Y lead 11b. Both X and Y
Free end portions 11a', 11 of leads 11a, 11b
The lower surface of b' is supported by a pedestal (not shown) during wire bonding, but since it is free laterally, both X and Y lead free ends 11a', 11
b′ is unstable against external forces from orthogonal directions,
Therefore, when the bonding device 3 described above is used, the ultrasonic vibration direction when bonding the wire 8 onto the Y lead free end 11b' is Since the Y direction is relatively stable against external forces, wire bonding at this time can be performed with high strength. On the other hand, when bonding the wire 8 onto the X lead free end 11a', ultrasonic vibration is applied in the lateral direction (Y direction) orthogonal to the X lead free end 11a', so the X The free end portion 11a' of the lead caused lateral movement, resulting in poor transmission efficiency of ultrasonic energy, and as a result, bonding strength was likely to vary.
上記問題の解決策として、リードへフレームに
おけるリードの各遊端部をボンデイング装置のホ
ーンと平行になるようリード配列パターンを変更
することが考えられる。しかし、このようなパタ
ーン設計の変更はリードフレームでのリードの高
密度配置等の要求から事実上不能であり、そのた
め各リードでのワイヤボンデイング強度に段階的
なバラツキのあるままリードフレームを後工程に
送るようにしているのが現状であり、後工程でワ
イヤ外れ等のトラブルを招く要因となつていた。 As a solution to the above problem, it is conceivable to change the lead arrangement pattern so that each free end of the lead in the lead frame is parallel to the horn of the bonding device. However, such changes in pattern design are virtually impossible due to demands such as high-density placement of leads on the lead frame, and as a result, the lead frame is processed in post-processing with gradual variations in the wire bonding strength of each lead. Currently, the wires are sent to the wires, which leads to problems such as wires coming off in later processes.
問題点を解決するための手段
本考案は上記問題点に鑑みて提案されたもの
で、ホーンをリードフレーム搬送路と略45゜の角
度で配置することにより上記問題点を解決したも
のである。Means for Solving the Problems The present invention was proposed in view of the above problems, and solves the above problems by arranging the horn at an angle of about 45 degrees with the lead frame conveyance path.
作 用
上記のようにホーンを配置すると、リードフレ
ームのリードフレーム長手方向に平行及び直交す
る方向で配置された各リード遊端部に対しホーン
が略45゜の角度で延びて、この角度でワイヤボン
デイング時に各リード遊端部に超音波振動が加え
られ、従つて各リード遊端部でのワイヤボンデイ
ング強度の均一化が容易になり、上記従来問題点
が解決される。Effect When the horn is arranged as described above, the horn extends at an angle of approximately 45° to each lead free end that is arranged in a direction parallel and perpendicular to the longitudinal direction of the lead frame, and the wire is connected at this angle. Ultrasonic vibrations are applied to the free ends of each lead during bonding, and therefore the wire bonding strength at each lead free end can be easily made uniform, and the above-mentioned conventional problems are solved.
実施例
以下に本考案を例えば第３図に示した搬送路２
上のリードフレーム１にワイヤボンデイングする
ボンデイング装置に適用し、第１図及び第２図を
参照して説明する。Embodiment The present invention will be described below, for example, in the conveyance path 2 shown in FIG.
The present invention is applied to a bonding apparatus for wire bonding to the lead frame 1 above, and will be explained with reference to FIGS. 1 and 2.
第１図のボンデイング装置１４はＸ−Ｙテーブ
ル１５上に設置されたボンデイング装置本体部１
６と、ボンイデイング装置本体部１６から延びる
ホーン１７と、ホーン１７の先端部に装着された
キヤピラリ１８及びワイヤ送り機構１９で構成さ
れる。このボンデイング装置１４の特徴はホーン
１７を搬送路２に対して略45゜の角度で設置する
ことのみで、ワイヤボンデイング動作は従来同様
に行なわれる。 A bonding apparatus 14 in FIG. 1 is a bonding apparatus main body 1 installed on an X-Y table 15.
6, a horn 17 extending from the bonding device main body 16, a capillary 18 attached to the tip of the horn 17, and a wire feeding mechanism 19. The only feature of this bonding device 14 is that the horn 17 is installed at an angle of approximately 45° with respect to the conveyance path 2, and the wire bonding operation is performed in the same manner as in the conventional method.
即ち、リードフレーム１を間欠送りして１つの
ランド部１０をホーン１７の先端のキヤピラリ１
８の下方に位置させるとボンデイング装置１４が
作動して、ワイヤ８をランド部１０上のICペレ
ツト１３の電極とリード遊端部１１′，１１′……
上に順次ボンデイングしていく。この時リード遊
端部１１′，１１′……上におけるワイヤボンデイ
ング動作を第２図に基づき説明すると、Ｘリード
遊端部１１a′に対してワイヤボンデイングはＸ方
向、Ｙ方向と略45゜の方向から超音波振動を加え
て行われることが分る。一方Ｙリード遊端部１１
b′に対してもワイヤボンデイングはＸ方向、Ｙ方
向と略45゜の方向から超音波振動を加えて行われ
ることが分る。つまり両Ｘ・Ｙリード遊端部１１
a′，１１b′にはほぼ同一条件下でワイヤボンデイ
ングが行われることになり、両者のワイヤボンデ
イングはほぼ同一強度で行われることが分る。 That is, by intermittently feeding the lead frame 1, one land portion 10 is attached to the capillary 1 at the tip of the horn 17.
8, the bonding device 14 operates to connect the wire 8 to the electrodes of the IC pellet 13 on the land portion 10 and the lead free ends 11', 11'...
Bonding is performed sequentially on top. At this time, the wire bonding operation on the lead free ends 11', 11', . . . will be explained based on FIG. It can be seen that this is done by applying ultrasonic vibrations from different directions. On the other hand, Y lead free end 11
It can be seen that wire bonding for b' is also performed by applying ultrasonic vibrations from approximately 45 degrees in the X and Y directions. In other words, both X and Y lead free ends 11
It can be seen that wire bonding is performed on a' and 11b' under almost the same conditions, and the wire bonding is performed on both with approximately the same strength.
考案の効果
以上のように本考案によればリードフレームの
リード遊端部上へのワイヤボンデイング強度の均
一化が容易になり、信頼性の高いボンデイング装
置が提供できる。Effects of the Invention As described above, according to the present invention, it is possible to easily equalize the wire bonding strength on the lead free end portion of the lead frame, and to provide a highly reliable bonding device.
第１図は本考案の一実施例を示す平面図、第２
図は本考案のボンデイング動作を説明するための
リードフレーム部分拡大平面図である。第３図お
よび第４図は従来のボンデイング装置の平面図及
び側面図、第５図は第３図のボンデイング装置に
よるボンデイング動作を説明するためのリードフ
レーム部分拡大平面図である。
１……リードフレーム、２……搬送路、８……
ワイヤ、１４……ボンデイング装置、１７……ホ
ーン、１８……キヤピラリ。
Figure 1 is a plan view showing one embodiment of the present invention;
The figure is a partially enlarged plan view of a lead frame for explaining the bonding operation of the present invention. 3 and 4 are a plan view and a side view of a conventional bonding apparatus, and FIG. 5 is a partially enlarged plan view of a lead frame for explaining the bonding operation by the bonding apparatus of FIG. 3. 1... Lead frame, 2... Conveyance path, 8...
wire, 14... bonding device, 17... horn, 18... capillary.
Claims (1)
ンデイング用キヤピラリにホーンを介して超音波
振動を伝達するボンデイング装置において、前記
ホーンを前記搬送路上のリードフレーム送り方向
と略45゜の角度でもつて配置したことを特徴とす
るボンデイング装置。 In a bonding device that transmits ultrasonic vibrations via a horn to a wire bonding capillary placed on a lead frame conveyance path, the horn is arranged at an angle of approximately 45° with respect to the lead frame feeding direction on the conveyance path. Characteristic bonding equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984097571U JPS6112237U (en) | 1984-06-27 | 1984-06-27 | bonding equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984097571U JPS6112237U (en) | 1984-06-27 | 1984-06-27 | bonding equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6112237U JPS6112237U (en) | 1986-01-24 |
| JPH023629Y2 true JPH023629Y2 (en) | 1990-01-29 |
Family
ID=30657127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1984097571U Granted JPS6112237U (en) | 1984-06-27 | 1984-06-27 | bonding equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6112237U (en) |
-
1984
- 1984-06-27 JP JP1984097571U patent/JPS6112237U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6112237U (en) | 1986-01-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5976964A (en) | Method of improving interconnect of semiconductor device by utilizing a flattened ball bond | |
| JP3226752B2 (en) | Method for manufacturing semiconductor device | |
| JP4860128B2 (en) | Wire bonding method | |
| JPS61125062A (en) | Method and device for attaching pin | |
| US5611478A (en) | Lead frame clamp for ultrasonic bonding | |
| KR100721280B1 (en) | A method of forming semiconductor chip assembly and an apparatus for forming wire bonds from circuitry on a substrate to a semiconductor chip | |
| JPS60167454A (en) | Semiconductor device | |
| JPH023629Y2 (en) | ||
| JP3670371B2 (en) | Semiconductor device and manufacturing method thereof | |
| JPH08148623A (en) | Semiconductor device | |
| JP2007109749A (en) | Lead frame and semiconductor device using the same | |
| KR200153438Y1 (en) | Chip scale package using a tab tape | |
| KR100721274B1 (en) | A method of forming semiconductor chip assembly | |
| JPH0732216B2 (en) | Semiconductor device | |
| JP2003086621A (en) | Semiconductor device and manufacturing method therefor | |
| JPH0214558A (en) | Semiconductor integrated circuit device | |
| JPH0539630Y2 (en) | ||
| JPH0238448Y2 (en) | ||
| JPH0888249A (en) | Face-down bonding method | |
| JPS63160262A (en) | Lead frame and semiconductor device using the same | |
| KR200292328Y1 (en) | Semiconductor package | |
| JP3801397B2 (en) | Semiconductor device mounting substrate and semiconductor device mounting body | |
| JPH0642348Y2 (en) | Semiconductor device | |
| JP2004063868A (en) | Manufacture of semiconductor device | |
| JPS61131464A (en) | Wire bonding method |