JPH0234467B2 - - Google Patents
Info
- Publication number
- JPH0234467B2 JPH0234467B2 JP58230288A JP23028883A JPH0234467B2 JP H0234467 B2 JPH0234467 B2 JP H0234467B2 JP 58230288 A JP58230288 A JP 58230288A JP 23028883 A JP23028883 A JP 23028883A JP H0234467 B2 JPH0234467 B2 JP H0234467B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding pad
- channel
- output
- transistors
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000000295 complement effect Effects 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58230288A JPS60121760A (ja) | 1983-12-06 | 1983-12-06 | 相補型半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58230288A JPS60121760A (ja) | 1983-12-06 | 1983-12-06 | 相補型半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60121760A JPS60121760A (ja) | 1985-06-29 |
| JPH0234467B2 true JPH0234467B2 (bg) | 1990-08-03 |
Family
ID=16905460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58230288A Granted JPS60121760A (ja) | 1983-12-06 | 1983-12-06 | 相補型半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60121760A (bg) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH041151U (bg) * | 1990-04-18 | 1992-01-07 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587857A (ja) * | 1981-07-06 | 1983-01-17 | Nippon Telegr & Teleph Corp <Ntt> | 相補型ｍｉｓ回路装置 |
-
1983
- 1983-12-06 JP JP58230288A patent/JPS60121760A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587857A (ja) * | 1981-07-06 | 1983-01-17 | Nippon Telegr & Teleph Corp <Ntt> | 相補型ｍｉｓ回路装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH041151U (bg) * | 1990-04-18 | 1992-01-07 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60121760A (ja) | 1985-06-29 |
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