JPH0234414B2 - - Google Patents
Info
- Publication number
- JPH0234414B2 JPH0234414B2 JP57113734A JP11373482A JPH0234414B2 JP H0234414 B2 JPH0234414 B2 JP H0234414B2 JP 57113734 A JP57113734 A JP 57113734A JP 11373482 A JP11373482 A JP 11373482A JP H0234414 B2 JPH0234414 B2 JP H0234414B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- charged particle
- filter
- magnetic field
- particle beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002245 particle Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 description 24
- 238000010884 ion-beam technique Methods 0.000 description 19
- 230000005284 excitation Effects 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 229910001338 liquidmetal Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000006023 eutectic alloy Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 101700004678 SLIT3 Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 102100027339 Slit homolog 3 protein Human genes 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Tubes For Measurement (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57113734A JPS595551A (ja) | 1982-06-30 | 1982-06-30 | 荷電粒子線装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57113734A JPS595551A (ja) | 1982-06-30 | 1982-06-30 | 荷電粒子線装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS595551A JPS595551A (ja) | 1984-01-12 |
| JPH0234414B2 true JPH0234414B2 (enrdf_load_stackoverflow) | 1990-08-03 |
Family
ID=14619778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57113734A Granted JPS595551A (ja) | 1982-06-30 | 1982-06-30 | 荷電粒子線装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS595551A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59151740A (ja) * | 1983-02-18 | 1984-08-30 | Seiko Instr & Electronics Ltd | 複数のイオン源を用いた微細加工装置 |
| JPH0727768B2 (ja) * | 1985-09-09 | 1995-03-29 | 東京エレクトロン株式会社 | イオン注入装置 |
| JPH06318443A (ja) * | 1994-03-31 | 1994-11-15 | Hitachi Ltd | イオンビーム装置 |
-
1982
- 1982-06-30 JP JP57113734A patent/JPS595551A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS595551A (ja) | 1984-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4215282B2 (ja) | 静電対物レンズ及び電気走査装置を装備したｓｅｍ | |
| US4649316A (en) | Ion beam species filter and blanker | |
| EP2365514B1 (en) | Twin beam charged particle column and method of operating thereof | |
| EP0156913A1 (en) | Ion microbeam implanting apparatus | |
| JP2810797B2 (ja) | 反射電子顕微鏡 | |
| JPS62168324A (ja) | 電子線装置内の二次およびまたは後方散乱電子の検出装置 | |
| US20240170248A1 (en) | Particle beam system | |
| US4835399A (en) | Charged particle beam apparatus | |
| JPS62108438A (ja) | 空間電荷レンズを使用した高電流質量分光計 | |
| JPS6334844A (ja) | 絶縁材料のイオン分析方法および装置 | |
| JPH0234414B2 (enrdf_load_stackoverflow) | ||
| JP2000133183A (ja) | 荷電粒子線装置 | |
| US5736742A (en) | Objective lens and charged particle beam system | |
| RU2144237C1 (ru) | Оптическая колонка для излучения частиц | |
| JPS63216256A (ja) | 荷電粒子線装置 | |
| JP2700002B2 (ja) | 荷電粒子光学系 | |
| JPH11250843A (ja) | 集束イオンビーム装置 | |
| JPH063720B2 (ja) | 集束イオンビ−ム装置 | |
| JPS61114453A (ja) | 荷電粒子線装置 | |
| JP2003007238A (ja) | ビームセパレータおよび反射電子顕微鏡 | |
| JPH0562419B2 (enrdf_load_stackoverflow) | ||
| JPS613098A (ja) | 荷電ビ−ム装置 | |
| JPS58169856A (ja) | 荷電粒子線装置 | |
| JPH06318443A (ja) | イオンビーム装置 | |
| JPH0453068B2 (enrdf_load_stackoverflow) |