JPH023297B2 - - Google Patents
Info
- Publication number
- JPH023297B2 JPH023297B2 JP57204819A JP20481982A JPH023297B2 JP H023297 B2 JPH023297 B2 JP H023297B2 JP 57204819 A JP57204819 A JP 57204819A JP 20481982 A JP20481982 A JP 20481982A JP H023297 B2 JPH023297 B2 JP H023297B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- compound semiconductor
- gaas
- crystal
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57204819A JPS5994815A (ja) | 1982-11-22 | 1982-11-22 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57204819A JPS5994815A (ja) | 1982-11-22 | 1982-11-22 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5994815A JPS5994815A (ja) | 1984-05-31 |
| JPH023297B2 true JPH023297B2 (https=) | 1990-01-23 |
Family
ID=16496902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57204819A Granted JPS5994815A (ja) | 1982-11-22 | 1982-11-22 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5994815A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2569754B2 (ja) * | 1988-09-10 | 1997-01-08 | 富士通株式会社 | 化合物半導体装置の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5882575A (ja) * | 1981-11-11 | 1983-05-18 | Nippon Telegr & Teleph Corp <Ntt> | 半導体基板の製法 |
-
1982
- 1982-11-22 JP JP57204819A patent/JPS5994815A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5994815A (ja) | 1984-05-31 |
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