JPH02298084A - Sealing of light-emitting diode - Google Patents
Sealing of light-emitting diodeInfo
- Publication number
- JPH02298084A JPH02298084A JP1118956A JP11895689A JPH02298084A JP H02298084 A JPH02298084 A JP H02298084A JP 1118956 A JP1118956 A JP 1118956A JP 11895689 A JP11895689 A JP 11895689A JP H02298084 A JPH02298084 A JP H02298084A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- emitting diode
- epoxy resin
- light emitting
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007789 sealing Methods 0.000 title claims abstract description 6
- 239000013522 chelant Substances 0.000 claims abstract description 11
- -1 aliphatic organic compound Chemical class 0.000 claims abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 abstract description 32
- 239000003822 epoxy resin Substances 0.000 abstract description 15
- 229920000647 polyepoxide Polymers 0.000 abstract description 15
- 238000010521 absorption reaction Methods 0.000 abstract description 9
- 230000035939 shock Effects 0.000 abstract description 7
- 229920005989 resin Polymers 0.000 abstract description 2
- 239000011347 resin Substances 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 3
- 238000000576 coating method Methods 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000004382 potting Methods 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- 238000002845 discoloration Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004649 discoloration prevention Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は発光ダイオード素子の封止において、銀（Ａｇ
）メッキを有する反射ケースとボッティング用エポキシ
樹脂の密着力改良に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention uses silver (Ag
) Regarding improving the adhesion between a reflective case with plating and an epoxy resin for botting.
従来の技術
近時、高耐熱性の熱可塑性樹脂へメッキ配線した立体配
線基板を利用した表面実装用発光ダイオード表示器が提
案されている（例えば、特願昭６３−９８６２０．特願
昭６３−１１３１３３）。BACKGROUND OF THE INVENTION Recently, surface-mounted light emitting diode displays using a three-dimensional wiring board plated on a highly heat-resistant thermoplastic resin have been proposed (for example, Japanese Patent Application No. 63-98620; 113133).
前記発光ダイオード表示器の構造を第２図の平面図に示
す。第２図において、１は熱可塑性樹脂で射出成形され
た反射ケースであり、２，３．４に示す斜線部はＣｕ／
Ｎ ｉ／Ａｇの三層メッキまたはＮ ｉ／Ａｇの２層メ
ッキが施されており、前記メッキ層はスルーホール５．
６を通して電極用メッキ端子７．８と接続されている。The structure of the light emitting diode display is shown in the plan view of FIG. In Figure 2, 1 is a reflective case injection molded with thermoplastic resin, and the shaded areas shown in 2 and 3.4 are Cu/
Ni/Ag three-layer plating or Ni/Ag two-layer plating is applied, and the plating layer is formed into a through hole 5.
6 and is connected to the plated electrode terminal 7.8.
なお、メッキランド２，３の間には約０．３１１ＩＩｌ
の幅で下地の熱可塑性樹脂がメッキされていない状態で
立体絶縁パターンを形成している。反射ケースの内部は
発光ダイオード素子の保護、光の取り出し効率向上のた
めに透明エポキシ樹脂１２でボッティングにより封止さ
れている。そして、この表示器は、電極用メッキ端子７
から同８へ数ｍＡ〜数十ｍＡの電流を流すことにより発
光ダイオード素子９が発光し、可視発光ランプとして作
動する。In addition, there is approximately 0.311IIl between plated lands 2 and 3.
A three-dimensional insulation pattern is formed with the underlying thermoplastic resin unplated. The inside of the reflective case is sealed with transparent epoxy resin 12 by botting to protect the light emitting diode elements and improve light extraction efficiency. This display device has electrode plated terminal 7.
By passing a current of several mA to several tens of mA from the light emitting diode element 9 to the light emitting diode element 8, the light emitting diode element 9 emits light and operates as a visible light emitting lamp.
発明が解決しようとする課題
しかし、前記発光ダイオード表示器においてはＡｇメッ
キとエポキシ樹脂との濡れ性が悪（、密着力が弱いため
、熱衝撃試験や吸湿リフロー試験（８５℃、８５％ＲＨ
の高温高湿下で１００８ ｒ以上放置後リフロー性けを
行う試験）において、Ａｇメッキとエポキシ樹脂の界面
剥離が発生し、特に吸湿リフローにおいては吸湿水分の
界面における水蒸気膨張によりＡｇペースト外れ等の問
題が生じる。本発明の目的は前記欠点を解消し、熱衝撃
特性や吸湿リフロー特性を改善した発光ダイオード素子
の封止方法を提供するにある。Problems to be Solved by the Invention However, in the light emitting diode display device, the wettability between the Ag plating and the epoxy resin is poor (and the adhesion is weak), so thermal shock tests and moisture absorption reflow tests (85°C, 85%RH
In a test in which the Ag plating and the epoxy resin were subjected to reflow treatment after being left at high temperature and high humidity for 1008 r or more), interfacial peeling between the Ag plating and the epoxy resin occurred, and especially in moisture absorption reflow, water vapor expansion at the interface of moisture absorption caused Ag paste to come off, etc. A problem arises. SUMMARY OF THE INVENTION An object of the present invention is to provide a method for sealing a light emitting diode element that eliminates the above-mentioned drawbacks and improves thermal shock characteristics and moisture absorption reflow characteristics.
課題を解決するための手段
本発明は前記課題を解決するために、反射ケースにＡｇ
メッキ後、脂肪族有機化合物系のＡｇ変色防止剤を用い
て、Ａｇメッキ表面にキレート皮膜を形成し、次いで発
光ダイオード素子のＡｇペーストによる固定およびＡｕ
Ｍｊによる結線後、エポキシ樹脂で反射ケース内をボッ
ティングして封止するものである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention incorporates Ag into the reflective case.
After plating, a chelate film is formed on the Ag plating surface using an aliphatic organic compound-based Ag discoloration inhibitor, and then the light emitting diode element is fixed with Ag paste and the Au
After connecting with Mj, the inside of the reflection case is sealed with epoxy resin.
作用
Ａｇメッキ表面に前記キレート皮膜を施すことにより、
ボッティング用エポキシ樹脂とＡｇメッキの濡れ性を著
しく向上させることができ、密着力の向上により熱衝撃
試験や吸湿リフロー試験における界面ｆｆ１ｌｌ １を
防止することができる。By applying the chelate film on the Ag plating surface,
The wettability of the botting epoxy resin and Ag plating can be significantly improved, and the improved adhesion can prevent interface ff1ll1 in thermal shock tests and moisture absorption reflow tests.
実施例
以下、本発明の実施例について説明する。従来技術と同
様に、第１図の断面図に示す発光ダイオード表示器の斜
線部にＣｕ ／ Ｎ ｉ ／ Ａ ｇり三層メッキはＮ
ｉ ／ Ａ ｇの二層メッキと施す。次に、市販の脂
肪族有機化合物から成るＡｇ変色防止剤を用いてＡｇメ
ッキ表面にキレート皮膜１３を形成する。例えば、Ａｇ
メッキ終了後、流水等で水洗いし、ついで、Ａｇ変色防
止剤を純水で１０倍程度に希釈した溶液に、常温で１〜
５秒程度浸漬した後、流水等で水洗、乾燥を行うことに
より上記キレート皮膜１３を作成できる。その後、従来
技術と同様にメッキランド２に発光ダイオード素子９を
Ａｇペースト１０で固定し、Ａｕ＆！ｆｌｌｌによりメ
ッキランド３と結線する。そして、最終的に、反射ケー
スの内部を透明エポキシ樹脂１２でボッティングするこ
とにより封止する。発光ダイオード表示器の動作につい
ては従来技術における説明と同様である。Examples Examples of the present invention will be described below. Similar to the conventional technology, the three-layer plating of Cu/Ni/Ag is applied to the shaded area of the light emitting diode display shown in the cross-sectional view of FIG.
Applied with two-layer plating of i/Ag. Next, a chelate film 13 is formed on the Ag plating surface using a commercially available Ag discoloration inhibitor made of an aliphatic organic compound. For example, Ag
After plating, wash with running water, etc., and then add a solution of Ag discoloration inhibitor diluted about 10 times with pure water for 1 to 10 minutes at room temperature.
After dipping for about 5 seconds, the chelate film 13 can be created by washing with running water or the like and drying. Thereafter, the light emitting diode element 9 is fixed to the plating land 2 with Ag paste 10 as in the conventional technique, and Au&! It is connected to the plating land 3 by flll. Finally, the inside of the reflective case is sealed by botting with transparent epoxy resin 12. The operation of the light emitting diode display is similar to that described in the prior art.
このように、樹脂封止前にＡｇメッキ表面をキレート皮
膜１３で保護した発光ダイオード表示器はＡｇメッキと
エポキシ樹脂の密着力が向上し、熱衝撃試験や吸湿リフ
ロー試験での界面剥離を防止できる。In this way, the light emitting diode display device whose Ag plating surface is protected with the chelate film 13 before resin sealing has improved adhesion between the Ag plating and the epoxy resin, and can prevent interfacial peeling during thermal shock tests and moisture absorption reflow tests. .
発明の効果
以上のように本発明によれば、Ａｇメッキを有する反射
ケースにＡｇ変色防止処理、すなわちＡｇメッキ表面に
脂肪族有機化合物によるキレート皮膜を形成した後、エ
ポキシ樹脂で反射ケースの内部をボッティング封止する
ことにより、電極用Ａｇメッキ端子の変色防止という当
然の効果以外に、ボッティング用エポキシ樹脂とＡｇメ
ッキ濡れ性を著しく向上させることができ、密着力の向
上により熱衝撃試験や吸湿リフロー試験における界面剥
離を防止することができる。また、前記処理により、Ａ
ｕ線のＡｇメッキ表面へのワイヤーボンディング特性は
悪化せず、同等もしくは向上が計れる。Effects of the Invention As described above, according to the present invention, after applying Ag discoloration prevention treatment to a reflective case having Ag plating, that is, forming a chelate film using an aliphatic organic compound on the Ag plating surface, the interior of the reflective case is coated with epoxy resin. Botting sealing not only has the natural effect of preventing discoloration of Ag-plated terminals for electrodes, but also significantly improves the wettability of the botting epoxy resin and Ag plating, and improves adhesion for thermal shock tests. Interfacial peeling in moisture absorption reflow tests can be prevented. In addition, by the above processing, A
The wire bonding characteristics of the U-ray to the Ag plating surface do not deteriorate, and can be expected to be the same or improved.
第１図本発明の実施により得られた表面実装用発光ダイ
オード表示器の断面図第２図は従来例装置の平面図であ
る。
１・・・・・・反射ケース、２．３・・・・・・メッキ
ランド、４・・・・・・メッキ面５，６・・・・・・ス
ルーホール、７，８・・・・・・電極用メッキ端子、９
・・・・・・発光ダイオード素子、１ｏ・・・・・・Ａ
ｇペースト、１１・・・・・・Ａｕ１４．１２・・・・
・・透明エポキシ樹脂、１３・・・・・・キレート皮膜
。FIG. 1 is a sectional view of a surface-mounted light emitting diode display obtained by implementing the present invention. FIG. 2 is a plan view of a conventional device. 1...Reflection case, 2.3...Plated land, 4...Plated surface 5,6...Through hole, 7,8...・・Plated terminal for electrode, 9
......Light emitting diode element, 1o...A
g paste, 11...Au14.12...
...Transparent epoxy resin, 13...Chelate film.
Claims (1)
ダイオード素子と結線するためのワイヤーボンディング
用電極部に形成された銀メッキ面に脂肪族有機化合物に
よるキレート皮膜を形成する処理工程をそなえたことを
特徴する発光ダイオード素子の封止方法。It is characterized by comprising a treatment step of forming a chelate film of an aliphatic organic compound on the silver plated surface formed on the electrode part on which the light emitting diode element is mounted and the wire bonding electrode part for connecting with the light emitting diode element. A method for sealing light emitting diode elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1118956A JPH02298084A (en) | 1989-05-12 | 1989-05-12 | Sealing of light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1118956A JPH02298084A (en) | 1989-05-12 | 1989-05-12 | Sealing of light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02298084A true JPH02298084A (en) | 1990-12-10 |
Family
ID=14749435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1118956A Pending JPH02298084A (en) | 1989-05-12 | 1989-05-12 | Sealing of light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02298084A (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH058961U (en) * | 1991-07-15 | 1993-02-05 | スタンレー電気株式会社 | Surface mount LED |
| JPH058960U (en) * | 1991-07-15 | 1993-02-05 | スタンレー電気株式会社 | Surface mount LED |
| JP2001077430A (en) * | 1999-09-02 | 2001-03-23 | Citizen Electronics Co Ltd | Light-emitting diode |
| JP2003347597A (en) * | 2002-05-29 | 2003-12-05 | Kyocera Corp | Substrate for mounting light emitting element |
| JP2006303092A (en) * | 2005-04-19 | 2006-11-02 | Sumitomo Metal Electronics Devices Inc | Package for mounting light emitting element |
| JP2006344925A (en) * | 2005-05-11 | 2006-12-21 | Sharp Corp | Light emitting device and frame for loading the same |
| JP2006351568A (en) * | 2005-06-13 | 2006-12-28 | Sumitomo Metal Electronics Devices Inc | Method of manufacturing light emitting device mounting package |
| JP2007109915A (en) * | 2005-10-14 | 2007-04-26 | Stanley Electric Co Ltd | Light emitting diode |
| JP2007266343A (en) * | 2006-03-29 | 2007-10-11 | Toyoda Gosei Co Ltd | Light emitting device |
| JP2007294988A (en) * | 2007-06-18 | 2007-11-08 | Kyocera Corp | Substrate for mounting light emitting device, and light emitting apparatus |
| JP2008010591A (en) * | 2006-06-28 | 2008-01-17 | Nichia Chem Ind Ltd | Light emitting device, manufacturing method thereof, package, and substrate for mounting light emitting element |
| JP2008072013A (en) * | 2006-09-15 | 2008-03-27 | Nichia Chem Ind Ltd | Light-emitting device |
| JP2008311339A (en) * | 2007-06-13 | 2008-12-25 | Sumitomo Metal Electronics Devices Inc | Package for light emitting element storage and manufacturing method thereof, and light emitting device using same |
| CN101432899A (en) * | 2006-04-28 | 2009-05-13 | 岛根县 | Semiconductor light emitting module, device, and its manufacturing method |
| JP2010538490A (en) * | 2007-09-06 | 2010-12-09 | エルジー イノテック カンパニー リミテッド | Light emitting device package and manufacturing method thereof |
-
1989
- 1989-05-12 JP JP1118956A patent/JPH02298084A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH058961U (en) * | 1991-07-15 | 1993-02-05 | スタンレー電気株式会社 | Surface mount LED |
| JPH058960U (en) * | 1991-07-15 | 1993-02-05 | スタンレー電気株式会社 | Surface mount LED |
| JP2001077430A (en) * | 1999-09-02 | 2001-03-23 | Citizen Electronics Co Ltd | Light-emitting diode |
| JP2003347597A (en) * | 2002-05-29 | 2003-12-05 | Kyocera Corp | Substrate for mounting light emitting element |
| JP2006303092A (en) * | 2005-04-19 | 2006-11-02 | Sumitomo Metal Electronics Devices Inc | Package for mounting light emitting element |
| JP2006344925A (en) * | 2005-05-11 | 2006-12-21 | Sharp Corp | Light emitting device and frame for loading the same |
| JP2006351568A (en) * | 2005-06-13 | 2006-12-28 | Sumitomo Metal Electronics Devices Inc | Method of manufacturing light emitting device mounting package |
| JP2007109915A (en) * | 2005-10-14 | 2007-04-26 | Stanley Electric Co Ltd | Light emitting diode |
| JP2007266343A (en) * | 2006-03-29 | 2007-10-11 | Toyoda Gosei Co Ltd | Light emitting device |
| CN101432899A (en) * | 2006-04-28 | 2009-05-13 | 岛根县 | Semiconductor light emitting module, device, and its manufacturing method |
| JP2008010591A (en) * | 2006-06-28 | 2008-01-17 | Nichia Chem Ind Ltd | Light emitting device, manufacturing method thereof, package, and substrate for mounting light emitting element |
| JP2008072013A (en) * | 2006-09-15 | 2008-03-27 | Nichia Chem Ind Ltd | Light-emitting device |
| JP2008311339A (en) * | 2007-06-13 | 2008-12-25 | Sumitomo Metal Electronics Devices Inc | Package for light emitting element storage and manufacturing method thereof, and light emitting device using same |
| JP2007294988A (en) * | 2007-06-18 | 2007-11-08 | Kyocera Corp | Substrate for mounting light emitting device, and light emitting apparatus |
| JP4633089B2 (en) * | 2007-06-18 | 2011-02-16 | 京セラ株式会社 | Light emitting element mounting substrate and light emitting device |
| JP2010538490A (en) * | 2007-09-06 | 2010-12-09 | エルジー イノテック カンパニー リミテッド | Light emitting device package and manufacturing method thereof |
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