JPH02277264A - トリミング抵抗器 - Google Patents
トリミング抵抗器Info
- Publication number
- JPH02277264A JPH02277264A JP9851689A JP9851689A JPH02277264A JP H02277264 A JPH02277264 A JP H02277264A JP 9851689 A JP9851689 A JP 9851689A JP 9851689 A JP9851689 A JP 9851689A JP H02277264 A JPH02277264 A JP H02277264A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- semiconductor substrate
- phase
- trimming
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009966 trimming Methods 0.000 title claims description 86
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000004065 semiconductor Substances 0.000 claims abstract description 59
- 238000000059 patterning Methods 0.000 claims abstract description 10
- 229910018125 Al-Si Inorganic materials 0.000 claims abstract 2
- 229910018520 Al—Si Inorganic materials 0.000 claims abstract 2
- 238000009792 diffusion process Methods 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 26
- 230000003647 oxidation Effects 0.000 claims description 19
- 238000007254 oxidation reaction Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 104
- 238000004519 manufacturing process Methods 0.000 description 20
- 229910018487 Ni—Cr Inorganic materials 0.000 description 12
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000000523 sample Substances 0.000 description 10
- 238000002844 melting Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 238000007738 vacuum evaporation Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Medicinal Preparation (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9851689A JPH02277264A (ja) | 1989-04-18 | 1989-04-18 | トリミング抵抗器 |
| CN 90103934 CN1047034A (zh) | 1989-04-18 | 1990-04-18 | 一种制备含有药物组成物的冷冻干燥方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9851689A JPH02277264A (ja) | 1989-04-18 | 1989-04-18 | トリミング抵抗器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02277264A true JPH02277264A (ja) | 1990-11-13 |
Family
ID=14221817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9851689A Pending JPH02277264A (ja) | 1989-04-18 | 1989-04-18 | トリミング抵抗器 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH02277264A (zh) |
| CN (1) | CN1047034A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100388436C (zh) * | 2002-05-15 | 2008-05-14 | 台湾积体电路制造股份有限公司 | 半导体组件之金属熔丝结构及其制造方法 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102415949A (zh) * | 2011-07-20 | 2012-04-18 | 北京莱瑞森医药科技有限公司 | 一种新型药液灌装冷冻工艺及药液灌装冷冻设备 |
| CN104307047B (zh) * | 2014-10-29 | 2017-02-01 | 中国科学院长春应用化学研究所 | 一种双梯度仿生修复支架及其制备方法 |
| CN108571862A (zh) * | 2017-03-07 | 2018-09-25 | 成都青山利康药业有限公司 | 一种薄膜的冻干剥离方法 |
| CN115463128B (zh) * | 2022-09-23 | 2023-10-03 | 深圳太太药业有限公司 | 注射用帕尼培南倍他米隆复方组合药物及其制备方法 |
-
1989
- 1989-04-18 JP JP9851689A patent/JPH02277264A/ja active Pending
-
1990
- 1990-04-18 CN CN 90103934 patent/CN1047034A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100388436C (zh) * | 2002-05-15 | 2008-05-14 | 台湾积体电路制造股份有限公司 | 半导体组件之金属熔丝结构及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1047034A (zh) | 1990-11-21 |
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