JPH0227320B2 - - Google Patents

Info

Publication number
JPH0227320B2
JPH0227320B2 JP59025536A JP2553684A JPH0227320B2 JP H0227320 B2 JPH0227320 B2 JP H0227320B2 JP 59025536 A JP59025536 A JP 59025536A JP 2553684 A JP2553684 A JP 2553684A JP H0227320 B2 JPH0227320 B2 JP H0227320B2
Authority
JP
Japan
Prior art keywords
wafer
heat treatment
crystal
fet
threshold voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59025536A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60171300A (ja
Inventor
Shigeo Murai
Koji Tada
Shinichi Akai
Shintaro Myazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Sumitomo Electric Industries Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Sumitomo Electric Industries Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2553684A priority Critical patent/JPS60171300A/ja
Publication of JPS60171300A publication Critical patent/JPS60171300A/ja
Publication of JPH0227320B2 publication Critical patent/JPH0227320B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2553684A 1984-02-14 1984-02-14 化合物半導体結晶の均質化方法 Granted JPS60171300A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2553684A JPS60171300A (ja) 1984-02-14 1984-02-14 化合物半導体結晶の均質化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2553684A JPS60171300A (ja) 1984-02-14 1984-02-14 化合物半導体結晶の均質化方法

Publications (2)

Publication Number Publication Date
JPS60171300A JPS60171300A (ja) 1985-09-04
JPH0227320B2 true JPH0227320B2 (enrdf_load_stackoverflow) 1990-06-15

Family

ID=12168731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2553684A Granted JPS60171300A (ja) 1984-02-14 1984-02-14 化合物半導体結晶の均質化方法

Country Status (1)

Country Link
JP (1) JPS60171300A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0787187B2 (ja) * 1987-08-13 1995-09-20 古河電気工業株式会社 ＧａＡｓ化合物半導体基板の製造方法
JP2505222B2 (ja) * 1987-10-16 1996-06-05 昭和電工株式会社 半絶縁体ＧａＡｓ基板の製造方法
JPH0776160B2 (ja) * 1987-11-05 1995-08-16 株式会社ジャパンエナジー 化合物半導体単結晶の熱処理方法
US5093284A (en) * 1988-05-27 1992-03-03 Hitachi Chemical Company, Ltd. Process for homogenizing compound semiconductor single crystal in properties

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5460858A (en) * 1977-10-25 1979-05-16 Hitachi Cable Ltd Manufacture of gallium arsenide crystal wafer
JPS5732643A (en) * 1980-08-06 1982-02-22 Toshiba Corp Annealing method of compound semiconductor single crystal

Also Published As

Publication number Publication date
JPS60171300A (ja) 1985-09-04

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