JPH0226791B2 - - Google Patents
Info
- Publication number
- JPH0226791B2 JPH0226791B2 JP58129353A JP12935383A JPH0226791B2 JP H0226791 B2 JPH0226791 B2 JP H0226791B2 JP 58129353 A JP58129353 A JP 58129353A JP 12935383 A JP12935383 A JP 12935383A JP H0226791 B2 JPH0226791 B2 JP H0226791B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- semiconductor
- gate electrode
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 53
- 239000010409 thin film Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 64
- 239000010408 film Substances 0.000 description 24
- 239000002184 metal Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 15
- 230000000694 effects Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000011949 advanced processing technology Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12935383A JPS6022377A (ja) | 1983-07-18 | 1983-07-18 | 薄膜半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12935383A JPS6022377A (ja) | 1983-07-18 | 1983-07-18 | 薄膜半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6022377A JPS6022377A (ja) | 1985-02-04 |
| JPH0226791B2 true JPH0226791B2 (fr) | 1990-06-12 |
Family
ID=15007499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12935383A Granted JPS6022377A (ja) | 1983-07-18 | 1983-07-18 | 薄膜半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6022377A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03290975A (ja) * | 1990-04-09 | 1991-12-20 | Fujitsu Ltd | 縦型半導体装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53101985A (en) * | 1977-02-17 | 1978-09-05 | Handotai Kenkyu Shinkokai | Reversible fet transistor |
| JPS53108788A (en) * | 1977-03-04 | 1978-09-21 | Handotai Kenkyu Shinkokai | Semiconductor ic |
| JPS5612775A (en) * | 1979-07-11 | 1981-02-07 | Matsushita Electric Ind Co Ltd | Electrostatic induction field-effect semiconductor device |
-
1983
- 1983-07-18 JP JP12935383A patent/JPS6022377A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53101985A (en) * | 1977-02-17 | 1978-09-05 | Handotai Kenkyu Shinkokai | Reversible fet transistor |
| JPS53108788A (en) * | 1977-03-04 | 1978-09-21 | Handotai Kenkyu Shinkokai | Semiconductor ic |
| JPS5612775A (en) * | 1979-07-11 | 1981-02-07 | Matsushita Electric Ind Co Ltd | Electrostatic induction field-effect semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6022377A (ja) | 1985-02-04 |
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