JPH0226791B2 - - Google Patents

Info

Publication number
JPH0226791B2
JPH0226791B2 JP58129353A JP12935383A JPH0226791B2 JP H0226791 B2 JPH0226791 B2 JP H0226791B2 JP 58129353 A JP58129353 A JP 58129353A JP 12935383 A JP12935383 A JP 12935383A JP H0226791 B2 JPH0226791 B2 JP H0226791B2
Authority
JP
Japan
Prior art keywords
electrode
layer
semiconductor
gate electrode
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58129353A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6022377A (ja
Inventor
Eiichi Maruyama
Yasuhiro Shiraki
Akitoshi Ishizaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58129353A priority Critical patent/JPS6022377A/ja
Publication of JPS6022377A publication Critical patent/JPS6022377A/ja
Publication of JPH0226791B2 publication Critical patent/JPH0226791B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58129353A 1983-07-18 1983-07-18 薄膜半導体装置 Granted JPS6022377A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58129353A JPS6022377A (ja) 1983-07-18 1983-07-18 薄膜半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58129353A JPS6022377A (ja) 1983-07-18 1983-07-18 薄膜半導体装置

Publications (2)

Publication Number Publication Date
JPS6022377A JPS6022377A (ja) 1985-02-04
JPH0226791B2 true JPH0226791B2 (enrdf_load_stackoverflow) 1990-06-12

Family

ID=15007499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58129353A Granted JPS6022377A (ja) 1983-07-18 1983-07-18 薄膜半導体装置

Country Status (1)

Country Link
JP (1) JPS6022377A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03290975A (ja) * 1990-04-09 1991-12-20 Fujitsu Ltd 縦型半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53101985A (en) * 1977-02-17 1978-09-05 Handotai Kenkyu Shinkokai Reversible fet transistor
JPS53108788A (en) * 1977-03-04 1978-09-21 Handotai Kenkyu Shinkokai Semiconductor ic
JPS5612775A (en) * 1979-07-11 1981-02-07 Matsushita Electric Ind Co Ltd Electrostatic induction field-effect semiconductor device

Also Published As

Publication number Publication date
JPS6022377A (ja) 1985-02-04

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