JPH02251850A - Mask for semiconductor integrated circuit - Google Patents
Mask for semiconductor integrated circuitInfo
- Publication number
- JPH02251850A JPH02251850A JP1072608A JP7260889A JPH02251850A JP H02251850 A JPH02251850 A JP H02251850A JP 1072608 A JP1072608 A JP 1072608A JP 7260889 A JP7260889 A JP 7260889A JP H02251850 A JPH02251850 A JP H02251850A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- semiconductor wafer
- pressure sensor
- ring
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000005530 etching Methods 0.000 abstract description 15
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体集積回路マスクに関し、特にシリコン
ダイヤフラム等をエツチングする際に使用される圧力セ
ンサー用裏面マスクに係るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit mask, and particularly to a back mask for a pressure sensor used when etching a silicon diaphragm or the like.
第2図は従来のこの種の圧力センサー用裏面マスクを示
した平面図であり、図において、1は圧力センサー用裏
面マスク、1aはこの圧力センサ用裏面マスク1に配置
されているチップパターン、lbは前記圧力センサ用裏
面マスク1の外枠である。FIG. 2 is a plan view showing a conventional back mask for a pressure sensor of this type. In the figure, 1 is a back mask for a pressure sensor, 1a is a chip pattern arranged on the back mask 1 for a pressure sensor, lb is the outer frame of the pressure sensor back mask 1.
2はマスク合せ時の半導体ウェハの位置、3はエツチン
グ時のOリングの位置を示す。2 indicates the position of the semiconductor wafer during mask alignment, and 3 indicates the position of the O-ring during etching.
従来の圧力センサー用裏面マスク1は半導体ウェハ2の
エツジにまでチップパターンが配置されている。そして
圧力センサ用のシリコンダイヤフラムの裏面エツチング
の際、第2図に示すように半導体ウェハ2のエツジには
0リング3が設置される。よって、0リング3の下にチ
ップパターンが配置されていることになる。In the conventional back mask 1 for a pressure sensor, a chip pattern is arranged up to the edge of the semiconductor wafer 2. When etching the back side of a silicon diaphragm for a pressure sensor, an O-ring 3 is installed at the edge of the semiconductor wafer 2, as shown in FIG. Therefore, the chip pattern is placed under the O-ring 3.
従来の圧力センサー用裏面マスク1は0リング3の下に
チップパターンが配置される様になるためエツチング液
が洩れることがある。In the conventional pressure sensor back mask 1, the chip pattern is placed under the O-ring 3, so that the etching solution may leak.
この発明は、上記のような問題点を解消するためになさ
れたもので、Oリングの下のチップパターンを除き、エ
ツチング液が洩れないようにしたものである。This invention was made to solve the above-mentioned problems, and the chip pattern under the O-ring is removed to prevent the etching solution from leaking.
この発明に係る半導体集積回路用マスクは、チップパタ
ーン配置を半導体ウェハのエツジにかからない様に円形
状に配置したものである。In the semiconductor integrated circuit mask according to the present invention, the chip patterns are arranged in a circular shape so as not to overlap the edges of the semiconductor wafer.
この発明においては、チップパターンを半導体ウェハの
エツジにかからない様に円形状に配置して、半導体ウェ
ハのエツジからのエツチング液の洩れをなくすものであ
る。In this invention, the chip patterns are arranged in a circular shape so as not to cover the edges of the semiconductor wafer, thereby eliminating leakage of etching solution from the edges of the semiconductor wafer.
以下、この発明の一実施例を第1図に基づいて説明する
0図において、1は圧力センサ用裏面マスク、laは圧
力センサ用裏面マスク1に円形状1に配置されているチ
ップパターン、lbは圧力センサ用裏面マスク1の外枠
である。2はマスク合せ時の半導体ウェハ1の位置、3
はエツチング時のOリングの位置を示す。Hereinafter, one embodiment of the present invention will be explained based on FIG. 1. In FIG. 1, 1 is a pressure sensor back mask, la is a chip pattern arranged in a circular shape 1 on the pressure sensor back mask 1, is the outer frame of the back mask 1 for pressure sensor. 2 is the position of the semiconductor wafer 1 during mask alignment, 3
indicates the position of the O-ring during etching.
次に動作について説明する。まず圧力センサ用裏面マス
ク1と半導体ウェハ2のマスク合せを行った後、圧力セ
ンサ用裏面マスク1のチップパターンlaを半導体ウェ
ハ2に露光・現像してパターンを形成する。その後、前
記半導体ウェハ2のエツジ部に0リング3を設置してエ
ツチングを行うことになる。Next, the operation will be explained. First, the pressure sensor back mask 1 and the semiconductor wafer 2 are mask-aligned, and then the chip pattern la of the pressure sensor back mask 1 is exposed and developed onto the semiconductor wafer 2 to form a pattern. Thereafter, an O-ring 3 is placed on the edge portion of the semiconductor wafer 2 and etching is performed.
本実施例においては、圧力センサ用裏面マスク1のチッ
プパターン1aが円形状に配置され、チップパターンが
半導体ウェハ2のエツジにかからない様に形成される。In this embodiment, the chip pattern 1a of the pressure sensor back mask 1 is arranged in a circular shape, and is formed so as not to overlap the edge of the semiconductor wafer 2.
つまり、エツチング時において、Oリング3の下にはチ
ップパターンがないので、エツチング液の洩れがなくな
る。That is, during etching, since there is no chip pattern under the O-ring 3, there is no leakage of the etching solution.
なお、上記実施例では圧力センサ用裏面マスクについて
説明したが、その他の半導体集積回路用マスクにも適用
できる。In addition, although the above-mentioned example explained the back mask for pressure sensors, it can also be applied to masks for other semiconductor integrated circuits.
以上のように、この発明は半導体集積回路マスクのチッ
プパターン配置を半導体ウェハのエツジにかからない様
に円形状に配置したことにより、エツチング時にエツチ
ング液が洩れることはなくなる。また、半導体ウェハの
エツジにチップパターンが形成されなくなるため、ウェ
ハ割れ、カケ等も少なくなる効果がある。As described above, in this invention, the chip pattern of the semiconductor integrated circuit mask is arranged in a circular shape so as not to cover the edge of the semiconductor wafer, so that the etching solution is prevented from leaking during etching. Furthermore, since no chip pattern is formed on the edge of the semiconductor wafer, there is an effect that wafer cracks, chips, etc. are reduced.
第1図はこの発明の一実施例に係る半導体集積回路用マ
スクを示す平面図、第2図は従来の圧力センサー用裏面
マスクを示す平面図である。
図において、1は圧力センサー用マスク、Iaはチップ
パターン、lbは外枠、2はマスク合せ時の半導体ウェ
ハの位置、3はエツチング時のOリングの位置を示した
ものである。
なお、図中同一符号は同−又は相当部分を示す。FIG. 1 is a plan view showing a mask for a semiconductor integrated circuit according to an embodiment of the present invention, and FIG. 2 is a plan view showing a conventional back mask for a pressure sensor. In the figure, 1 is a mask for a pressure sensor, Ia is a chip pattern, lb is an outer frame, 2 is a position of a semiconductor wafer during mask alignment, and 3 is an O-ring position during etching. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
い様に円形状に配置したことを特徴とする半導体集積回
路用マスク。A mask for semiconductor integrated circuits, characterized in that chip patterns are arranged in a circular shape so as not to cover the edge of a semiconductor wafer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1072608A JPH02251850A (en) | 1989-03-24 | 1989-03-24 | Mask for semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1072608A JPH02251850A (en) | 1989-03-24 | 1989-03-24 | Mask for semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02251850A true JPH02251850A (en) | 1990-10-09 |
Family
ID=13494275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1072608A Pending JPH02251850A (en) | 1989-03-24 | 1989-03-24 | Mask for semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02251850A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004104708A2 (en) * | 2003-05-15 | 2004-12-02 | 3D Systems, Inc. | Seal and support structure for semiconductor wafer |
-
1989
- 1989-03-24 JP JP1072608A patent/JPH02251850A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004104708A2 (en) * | 2003-05-15 | 2004-12-02 | 3D Systems, Inc. | Seal and support structure for semiconductor wafer |
WO2004104708A3 (en) * | 2003-05-15 | 2005-08-18 | 3D Systems Inc | Seal and support structure for semiconductor wafer |
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