JPH0223958B2 - - Google Patents

Info

Publication number
JPH0223958B2
JPH0223958B2 JP56154347A JP15434781A JPH0223958B2 JP H0223958 B2 JPH0223958 B2 JP H0223958B2 JP 56154347 A JP56154347 A JP 56154347A JP 15434781 A JP15434781 A JP 15434781A JP H0223958 B2 JPH0223958 B2 JP H0223958B2
Authority
JP
Japan
Prior art keywords
dummy
sense amplifier
digit
rfend
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56154347A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5856287A (ja
Inventor
Akira Osami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56154347A priority Critical patent/JPS5856287A/ja
Priority to DE8282109005T priority patent/DE3279896D1/de
Priority to EP82109005A priority patent/EP0075942B1/en
Priority to US06/428,517 priority patent/US4500974A/en
Publication of JPS5856287A publication Critical patent/JPS5856287A/ja
Publication of JPH0223958B2 publication Critical patent/JPH0223958B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP56154347A 1981-09-29 1981-09-29 半導体回路 Granted JPS5856287A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56154347A JPS5856287A (ja) 1981-09-29 1981-09-29 半導体回路
DE8282109005T DE3279896D1 (en) 1981-09-29 1982-09-29 Memory circuit
EP82109005A EP0075942B1 (en) 1981-09-29 1982-09-29 Memory circuit
US06/428,517 US4500974A (en) 1981-09-29 1982-09-29 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56154347A JPS5856287A (ja) 1981-09-29 1981-09-29 半導体回路

Publications (2)

Publication Number Publication Date
JPS5856287A JPS5856287A (ja) 1983-04-02
JPH0223958B2 true JPH0223958B2 (OSRAM) 1990-05-25

Family

ID=15582168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56154347A Granted JPS5856287A (ja) 1981-09-29 1981-09-29 半導体回路

Country Status (4)

Country Link
US (1) US4500974A (OSRAM)
EP (1) EP0075942B1 (OSRAM)
JP (1) JPS5856287A (OSRAM)
DE (1) DE3279896D1 (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4627032A (en) * 1983-11-25 1986-12-02 At&T Bell Laboratories Glitch lockout circuit for memory array
JPS60163295A (ja) * 1984-02-03 1985-08-26 Hitachi Ltd 半導体記憶装置
JPS62197990A (ja) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp 半導体記憶回路
US4870616A (en) * 1987-09-29 1989-09-26 Maryland Compact register set using a psram array
JPH0430388A (ja) * 1990-05-25 1992-02-03 Oki Electric Ind Co Ltd 半導体記憶回路
US5272676A (en) * 1990-11-20 1993-12-21 Hitachi, Ltd. Semiconductor integrated circuit device
US5430680A (en) * 1993-10-12 1995-07-04 United Memories, Inc. DRAM having self-timed burst refresh mode
US6587896B1 (en) * 1998-02-27 2003-07-01 Micron Technology, Inc. Impedance matching device for high speed memory bus
US7095642B1 (en) 2003-03-27 2006-08-22 Cypress Semiconductor Corporation Method and circuit for reducing defect current from array element failures in random access memories
US8072834B2 (en) * 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation
US20080080284A1 (en) * 2006-09-15 2008-04-03 Peter Mayer Method and apparatus for refreshing memory cells of a memory
JP6429260B1 (ja) * 2017-11-09 2018-11-28 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． 疑似スタティックランダムアクセスメモリおよびそのリフレッシュ方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5693363A (en) * 1979-12-04 1981-07-28 Fujitsu Ltd Semiconductor memory

Also Published As

Publication number Publication date
EP0075942B1 (en) 1989-08-16
EP0075942A2 (en) 1983-04-06
EP0075942A3 (en) 1986-01-29
JPS5856287A (ja) 1983-04-02
US4500974A (en) 1985-02-19
DE3279896D1 (en) 1989-09-21

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