JPH02236893A - 半導体メモリ装置 - Google Patents

半導体メモリ装置

Info

Publication number
JPH02236893A
JPH02236893A JP2041009A JP4100990A JPH02236893A JP H02236893 A JPH02236893 A JP H02236893A JP 2041009 A JP2041009 A JP 2041009A JP 4100990 A JP4100990 A JP 4100990A JP H02236893 A JPH02236893 A JP H02236893A
Authority
JP
Japan
Prior art keywords
line
memory device
semiconductor memory
signal
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2041009A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0561712B2 (enExample
Inventor
Kiyoo Ito
清男 伊藤
Ryoichi Hori
堀 陵一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2041009A priority Critical patent/JPH02236893A/ja
Publication of JPH02236893A publication Critical patent/JPH02236893A/ja
Publication of JPH0561712B2 publication Critical patent/JPH0561712B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Dram (AREA)
JP2041009A 1990-02-23 1990-02-23 半導体メモリ装置 Granted JPH02236893A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2041009A JPH02236893A (ja) 1990-02-23 1990-02-23 半導体メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2041009A JPH02236893A (ja) 1990-02-23 1990-02-23 半導体メモリ装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP56081042A Division JPS57198592A (en) 1981-05-29 1981-05-29 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPH02236893A true JPH02236893A (ja) 1990-09-19
JPH0561712B2 JPH0561712B2 (enExample) 1993-09-06

Family

ID=12596394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2041009A Granted JPH02236893A (ja) 1990-02-23 1990-02-23 半導体メモリ装置

Country Status (1)

Country Link
JP (1) JPH02236893A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130164A (ja) * 1993-11-01 1995-05-19 Nec Corp 半導体装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3942164A (en) * 1975-01-30 1976-03-02 Semi, Inc. Sense line coupling reduction system
JPS5271141A (en) * 1975-12-10 1977-06-14 Hitachi Ltd Word line driving circuit
JPS538528A (en) * 1976-07-12 1978-01-26 Nec Corp Memory circuit
JPS5693178A (en) * 1979-12-26 1981-07-28 Toshiba Corp Semiconductor memory device
JPS57100689A (en) * 1980-12-15 1982-06-22 Fujitsu Ltd Semiconductor storage device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3942164A (en) * 1975-01-30 1976-03-02 Semi, Inc. Sense line coupling reduction system
JPS5271141A (en) * 1975-12-10 1977-06-14 Hitachi Ltd Word line driving circuit
JPS538528A (en) * 1976-07-12 1978-01-26 Nec Corp Memory circuit
JPS5693178A (en) * 1979-12-26 1981-07-28 Toshiba Corp Semiconductor memory device
JPS57100689A (en) * 1980-12-15 1982-06-22 Fujitsu Ltd Semiconductor storage device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130164A (ja) * 1993-11-01 1995-05-19 Nec Corp 半導体装置

Also Published As

Publication number Publication date
JPH0561712B2 (enExample) 1993-09-06

Similar Documents

Publication Publication Date Title
JPH0243279B2 (enExample)
US5602772A (en) Dynamic semiconductor memory device
KR100574242B1 (ko) 계층형칼럼선택라인구조를갖는공간효율적반도체메모리
US6535451B2 (en) Semiconductor memory
JPH0775116B2 (ja) 半導体記憶装置
US4739497A (en) Semiconductor memory
KR20020002236A (ko) 반도체기억장치
US4888732A (en) Dynamic random access memory having open bit line architecture
US5621679A (en) Semiconductor memory device for achieving high bandwidth and method for arranging signal lines therefor
JPH0836885A (ja) ダイナミックランダムアクセスメモリ
US6678204B2 (en) Semiconductor memory device with high-speed operation and methods of using and designing thereof
JP3464803B2 (ja) 半導体メモリセル
US6574128B1 (en) Mid array isolate circuit layout
JP3720945B2 (ja) 半導体記憶装置
CN102682834B (zh) 包括存储单元阵列的设备以及操作存储器的设备和方法
JP3345282B2 (ja) 半導体集積回路装置の設計方法
JPH02236893A (ja) 半導体メモリ装置
JPH0381235B2 (enExample)
EP0136819A2 (en) Semiconductor memory
JP3159496B2 (ja) 半導体メモリ装置
JPH0516118B2 (enExample)
JPH03116486A (ja) 半導体メモリ装置
JPH04339394A (ja) 半導体メモリ装置
JPH03137891A (ja) 半導体メモリ装置
JPH02263388A (ja) 半導体メモリ装置