JPH022304B2 - - Google Patents
Info
- Publication number
- JPH022304B2 JPH022304B2 JP55042211A JP4221180A JPH022304B2 JP H022304 B2 JPH022304 B2 JP H022304B2 JP 55042211 A JP55042211 A JP 55042211A JP 4221180 A JP4221180 A JP 4221180A JP H022304 B2 JPH022304 B2 JP H022304B2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- transistor
- thin film
- transfer
- receiving surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 claims description 54
- 238000003860 storage Methods 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 7
- 108091008695 photoreceptors Proteins 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 2
- 229910052986 germanium hydride Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910017817 a-Ge Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- UNQHSZOIUSRWHT-UHFFFAOYSA-N aluminum molybdenum Chemical compound [Al].[Mo] UNQHSZOIUSRWHT-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/04—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa
- H04N1/19—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays
- H04N1/191—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays the array comprising a one-dimensional array, or a combination of one-dimensional arrays, or a substantially one-dimensional array, e.g. an array of staggered elements
- H04N1/192—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line
- H04N1/193—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays, e.g. linear CCD arrays
- H04N1/1938—Details of the electrical scanning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/04—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa
- H04N1/19—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays
- H04N1/191—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays the array comprising a one-dimensional array, or a combination of one-dimensional arrays, or a substantially one-dimensional array, e.g. an array of staggered elements
- H04N1/192—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line
- H04N1/193—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays, e.g. linear CCD arrays
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Facsimile Heads (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4221180A JPS56138967A (en) | 1980-03-31 | 1980-03-31 | Photoelectric converter |
| DE19813112907 DE3112907A1 (de) | 1980-03-31 | 1981-03-31 | "fotoelektrischer festkoerper-umsetzer" |
| US06/558,573 US4461956A (en) | 1980-03-31 | 1983-12-06 | Solid-state photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4221180A JPS56138967A (en) | 1980-03-31 | 1980-03-31 | Photoelectric converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56138967A JPS56138967A (en) | 1981-10-29 |
| JPH022304B2 true JPH022304B2 (de) | 1990-01-17 |
Family
ID=12629683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4221180A Granted JPS56138967A (en) | 1980-03-31 | 1980-03-31 | Photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56138967A (de) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064467A (ja) * | 1983-09-20 | 1985-04-13 | Seiko Epson Corp | 固体イメ−ジセンサ |
| JPH03135525A (ja) * | 1983-09-20 | 1991-06-10 | Seiko Epson Corp | 固体イメージセンサーの製造方法 |
| JPH03135524A (ja) * | 1983-09-20 | 1991-06-10 | Seiko Epson Corp | 固体イメージセンサ |
| JPS6139570A (ja) * | 1984-07-31 | 1986-02-25 | Canon Inc | 長尺イメ−ジセンサユニツト |
| JPS6139572A (ja) * | 1984-07-31 | 1986-02-25 | Canon Inc | 画像読取装置 |
| JPS6139571A (ja) * | 1984-07-31 | 1986-02-25 | Canon Inc | 画像読取装置 |
| JPS6129170A (ja) * | 1984-07-19 | 1986-02-10 | Canon Inc | フオトセンサ及びその製造法 |
| JPS6140055A (ja) * | 1984-08-01 | 1986-02-26 | Canon Inc | カラ−フオトセンサ |
| JPS6189659A (ja) * | 1984-10-09 | 1986-05-07 | Canon Inc | カラ−フオトセンサ |
| JPS6187365A (ja) * | 1984-10-05 | 1986-05-02 | Canon Inc | 画像読取装置 |
| JPS6185859A (ja) * | 1984-10-04 | 1986-05-01 | Canon Inc | 光電変換素子 |
| JPS6188559A (ja) * | 1984-10-08 | 1986-05-06 | Canon Inc | 画像読取装置 |
| JPS63133667A (ja) * | 1986-11-26 | 1988-06-06 | Ricoh Co Ltd | 密着形光電変換装置 |
| JPS6428864A (en) * | 1987-07-23 | 1989-01-31 | Ricoh Kk | Full-size image sensor circuit |
| JPS6415970A (en) * | 1987-07-09 | 1989-01-19 | Canon Kk | Image reading equipment |
| JPH0372770A (ja) * | 1990-07-17 | 1991-03-27 | Seiko Epson Corp | 読み取り装置 |
| JPH07202218A (ja) * | 1995-01-30 | 1995-08-04 | Toshiba Corp | 薄膜集積回路 |
| JPH0917987A (ja) * | 1995-06-29 | 1997-01-17 | Nec Corp | 密着イメージセンサ及びその製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52140235A (en) * | 1976-05-18 | 1977-11-22 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JPS5366115A (en) * | 1976-11-26 | 1978-06-13 | Hitachi Ltd | Solid image pickup equipment |
| JPS54139342A (en) * | 1978-04-20 | 1979-10-29 | Canon Inc | Information processing unit |
-
1980
- 1980-03-31 JP JP4221180A patent/JPS56138967A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52140235A (en) * | 1976-05-18 | 1977-11-22 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JPS5366115A (en) * | 1976-11-26 | 1978-06-13 | Hitachi Ltd | Solid image pickup equipment |
| JPS54139342A (en) * | 1978-04-20 | 1979-10-29 | Canon Inc | Information processing unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56138967A (en) | 1981-10-29 |
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