JPS639669B2 - - Google Patents
Info
- Publication number
- JPS639669B2 JPS639669B2 JP55042205A JP4220580A JPS639669B2 JP S639669 B2 JPS639669 B2 JP S639669B2 JP 55042205 A JP55042205 A JP 55042205A JP 4220580 A JP4220580 A JP 4220580A JP S639669 B2 JPS639669 B2 JP S639669B2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- section
- bbd
- thin film
- conversion element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 108091008695 photoreceptors Proteins 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4220580A JPS56138962A (en) | 1980-03-31 | 1980-03-31 | Photoelectric converter |
| US06/246,290 US4405857A (en) | 1980-03-31 | 1981-03-23 | Solid-state photoelectric converter |
| DE19813112865 DE3112865A1 (de) | 1980-03-31 | 1981-03-31 | "photoelektrischer festkoerper-umsetzer" |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4220580A JPS56138962A (en) | 1980-03-31 | 1980-03-31 | Photoelectric converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56138962A JPS56138962A (en) | 1981-10-29 |
| JPS639669B2 true JPS639669B2 (de) | 1988-03-01 |
Family
ID=12629501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4220580A Granted JPS56138962A (en) | 1980-03-31 | 1980-03-31 | Photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56138962A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6190356U (de) * | 1984-11-20 | 1986-06-12 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4913293A (de) * | 1972-05-17 | 1974-02-05 | ||
| JPS5128427A (de) * | 1974-09-03 | 1976-03-10 | Matsushita Electric Ind Co Ltd | |
| JPS51100630A (de) * | 1975-03-03 | 1976-09-06 | Sanju Gijutsu Kenkyusho Kk | |
| JPS5216990A (en) * | 1975-07-28 | 1977-02-08 | Rca Corp | Semiconductor device |
| JPS5310838A (en) * | 1976-07-17 | 1978-01-31 | Mitsubishi Electric Corp | Controlling system power flow |
| JPS5419342A (en) * | 1977-07-11 | 1979-02-14 | Automation Syst | Programmable logic controller |
| JPS5469396A (en) * | 1977-11-15 | 1979-06-04 | Nippon Telegr & Teleph Corp <Ntt> | Functional element array |
-
1980
- 1980-03-31 JP JP4220580A patent/JPS56138962A/ja active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4913293A (de) * | 1972-05-17 | 1974-02-05 | ||
| JPS5128427A (de) * | 1974-09-03 | 1976-03-10 | Matsushita Electric Ind Co Ltd | |
| JPS51100630A (de) * | 1975-03-03 | 1976-09-06 | Sanju Gijutsu Kenkyusho Kk | |
| JPS5216990A (en) * | 1975-07-28 | 1977-02-08 | Rca Corp | Semiconductor device |
| JPS5310838A (en) * | 1976-07-17 | 1978-01-31 | Mitsubishi Electric Corp | Controlling system power flow |
| JPS5419342A (en) * | 1977-07-11 | 1979-02-14 | Automation Syst | Programmable logic controller |
| JPS5469396A (en) * | 1977-11-15 | 1979-06-04 | Nippon Telegr & Teleph Corp <Ntt> | Functional element array |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56138962A (en) | 1981-10-29 |
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