JPH022298B2 - - Google Patents

Info

Publication number
JPH022298B2
JPH022298B2 JP55170408A JP17040880A JPH022298B2 JP H022298 B2 JPH022298 B2 JP H022298B2 JP 55170408 A JP55170408 A JP 55170408A JP 17040880 A JP17040880 A JP 17040880A JP H022298 B2 JPH022298 B2 JP H022298B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
layer
forming
oxide film
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55170408A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5793572A (en
Inventor
Takeo Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP55170408A priority Critical patent/JPS5793572A/ja
Publication of JPS5793572A publication Critical patent/JPS5793572A/ja
Publication of JPH022298B2 publication Critical patent/JPH022298B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
JP55170408A 1980-12-03 1980-12-03 Manufacture of semiconductor device Granted JPS5793572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55170408A JPS5793572A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55170408A JPS5793572A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5793572A JPS5793572A (en) 1982-06-10
JPH022298B2 true JPH022298B2 (enrdf_load_stackoverflow) 1990-01-17

Family

ID=15904362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55170408A Granted JPS5793572A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5793572A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59113659A (ja) * 1982-12-20 1984-06-30 Toshiba Corp Ｍｏｓダイナミツクメモリ
JPH0648718B2 (ja) * 1984-10-04 1994-06-22 沖電気工業株式会社 半導体メモリ素子の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2837877C2 (de) * 1978-08-30 1987-04-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines MOS-integrierten Halbleiterspeichers
JPS607389B2 (ja) * 1978-12-26 1985-02-23 超エル・エス・アイ技術研究組合 半導体装置の製造方法
US4222816A (en) * 1978-12-26 1980-09-16 International Business Machines Corporation Method for reducing parasitic capacitance in integrated circuit structures

Also Published As

Publication number Publication date
JPS5793572A (en) 1982-06-10

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