JPH0222195A - 液相結晶成長の方法および装置 - Google Patents

液相結晶成長の方法および装置

Info

Publication number
JPH0222195A
JPH0222195A JP33310987A JP33310987A JPH0222195A JP H0222195 A JPH0222195 A JP H0222195A JP 33310987 A JP33310987 A JP 33310987A JP 33310987 A JP33310987 A JP 33310987A JP H0222195 A JPH0222195 A JP H0222195A
Authority
JP
Japan
Prior art keywords
substrate
melt
cavity
crystal growth
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP33310987A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0566915B2 (enrdf_load_stackoverflow
Inventor
Hideo Kusuzawa
楠澤　英夫
Kiyotaka Benzaki
辨崎　清隆
Masaaki Sakata
雅昭 坂田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP33310987A priority Critical patent/JPH0222195A/ja
Publication of JPH0222195A publication Critical patent/JPH0222195A/ja
Publication of JPH0566915B2 publication Critical patent/JPH0566915B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP33310987A 1987-12-29 1987-12-29 液相結晶成長の方法および装置 Granted JPH0222195A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33310987A JPH0222195A (ja) 1987-12-29 1987-12-29 液相結晶成長の方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33310987A JPH0222195A (ja) 1987-12-29 1987-12-29 液相結晶成長の方法および装置

Publications (2)

Publication Number Publication Date
JPH0222195A true JPH0222195A (ja) 1990-01-25
JPH0566915B2 JPH0566915B2 (enrdf_load_stackoverflow) 1993-09-22

Family

ID=18262383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33310987A Granted JPH0222195A (ja) 1987-12-29 1987-12-29 液相結晶成長の方法および装置

Country Status (1)

Country Link
JP (1) JPH0222195A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2653634C2 (ru) 2010-12-22 2018-05-11 Конинклейке Филипс Электроникс Н.В. Визуализация моделей потоков

Also Published As

Publication number Publication date
JPH0566915B2 (enrdf_load_stackoverflow) 1993-09-22

Similar Documents

Publication Publication Date Title
US3783825A (en) Apparatus for the liquid-phase epitaxial growth of multi-layer wafers
JPS6236999B2 (enrdf_load_stackoverflow)
US4315796A (en) Crystal growth of compound semiconductor mixed crystals under controlled vapor pressure
US4918029A (en) Method for liquid-phase thin film epitaxy
JPH0222195A (ja) 液相結晶成長の方法および装置
JPS59188118A (ja) 気相エピタキシヤル結晶の製造方法
JPH0222194A (ja) 液相結晶成長方法および装置
JPH0566917B2 (enrdf_load_stackoverflow)
JPH0566916B2 (enrdf_load_stackoverflow)
JPS58156598A (ja) 結晶成長法
JP2599767B2 (ja) 溶液成長装置
JP2533760B2 (ja) 混晶の製造方法
JP4211897B2 (ja) 液相エピタキシャル成長方法
JPS5820795A (ja) 単結晶育成方法
JPS626338B2 (enrdf_load_stackoverflow)
JP2003267794A (ja) 結晶成長方法及び結晶成長装置
JPH01164792A (ja) 温度差法液相結晶成長の方法
Plaskett The Synthesis of Bulk GaP from Ga Solutions
JP2538009B2 (ja) 液相エピキタシャル成長方法
JPH0456128A (ja) ２―６族間化合物半導体装置の製造方法
JPH0572359B2 (enrdf_load_stackoverflow)
JPS59128298A (ja) 液相エピタキシヤル成長法
JPS60236220A (ja) 液相エピタキシヤル成長法
JPS63198318A (ja) エピタキシヤル成長方法
JPH02120298A (ja) 半絶縁性砒化ガリウム単結晶及びその製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees