JPH0222118A - 多結晶シリコンシートの製造方法 - Google Patents
多結晶シリコンシートの製造方法Info
- Publication number
- JPH0222118A JPH0222118A JP17220088A JP17220088A JPH0222118A JP H0222118 A JPH0222118 A JP H0222118A JP 17220088 A JP17220088 A JP 17220088A JP 17220088 A JP17220088 A JP 17220088A JP H0222118 A JPH0222118 A JP H0222118A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- nozzle
- molten silicon
- pressure
- mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 117
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 117
- 239000010703 silicon Substances 0.000 claims abstract description 117
- 238000002844 melting Methods 0.000 claims abstract description 32
- 230000008018 melting Effects 0.000 claims abstract description 32
- 238000005266 casting Methods 0.000 claims abstract description 17
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000011796 hollow space material Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000000047 product Substances 0.000 description 9
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17220088A JPH0222118A (ja) | 1988-07-11 | 1988-07-11 | 多結晶シリコンシートの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17220088A JPH0222118A (ja) | 1988-07-11 | 1988-07-11 | 多結晶シリコンシートの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0222118A true JPH0222118A (ja) | 1990-01-25 |
| JPH0479970B2 JPH0479970B2 (enrdf_load_stackoverflow) | 1992-12-17 |
Family
ID=15937440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17220088A Granted JPH0222118A (ja) | 1988-07-11 | 1988-07-11 | 多結晶シリコンシートの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0222118A (enrdf_load_stackoverflow) |
-
1988
- 1988-07-11 JP JP17220088A patent/JPH0222118A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0479970B2 (enrdf_load_stackoverflow) | 1992-12-17 |
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