JPH0479970B2 - - Google Patents

Info

Publication number

JPH0479970B2

JPH0479970B2 JP17220088A JP17220088A JPH0479970B2 JP H0479970 B2 JPH0479970 B2 JP H0479970B2 JP 17220088 A JP17220088 A JP 17220088A JP 17220088 A JP17220088 A JP 17220088A JP H0479970 B2 JPH0479970 B2 JP H0479970B2

Authority

JP

Japan

Prior art keywords

silicon

nozzle

molten silicon

pressure

mold

Prior art date

1988-07-11

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 229910052710 silicon Inorganic materials 0.000 claims description 111
• 239000010703 silicon Substances 0.000 claims description 111
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 110
• 238000002844 melting Methods 0.000 claims description 30
• 230000008018 melting Effects 0.000 claims description 30
• 238000000034 method Methods 0.000 claims description 29
• 238000004519 manufacturing process Methods 0.000 claims description 23
• 238000005266 casting Methods 0.000 claims description 17
• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
• 239000011261 inert gas Substances 0.000 claims description 9
• 239000000463 material Substances 0.000 claims description 9
• 239000011796 hollow space material Substances 0.000 claims description 3
• XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
• 238000002347 injection Methods 0.000 description 8
• 239000007924 injection Substances 0.000 description 8
• 239000013078 crystal Substances 0.000 description 6
• 229910052786 argon Inorganic materials 0.000 description 5
• 239000000155 melt Substances 0.000 description 4
• 229920001296 polysiloxane Polymers 0.000 description 4
• 235000012431 wafers Nutrition 0.000 description 4
• 238000006243 chemical reaction Methods 0.000 description 3
• 239000012535 impurity Substances 0.000 description 3
• OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
• 229910052799 carbon Inorganic materials 0.000 description 2
• 238000010924 continuous production Methods 0.000 description 2
• 230000007812 deficiency Effects 0.000 description 2
• 230000000694 effects Effects 0.000 description 2
• 238000005516 engineering process Methods 0.000 description 2
• 238000002474 experimental method Methods 0.000 description 2
• 239000007789 gas Substances 0.000 description 2
• 238000010438 heat treatment Methods 0.000 description 2
• 239000011810 insulating material Substances 0.000 description 2
• 230000002093 peripheral effect Effects 0.000 description 2
• 229910004298 SiO 2 Inorganic materials 0.000 description 1
• 230000015572 biosynthetic process Effects 0.000 description 1
• 239000011248 coating agent Substances 0.000 description 1
• 238000000576 coating method Methods 0.000 description 1
• 238000011109 contamination Methods 0.000 description 1
• 230000007547 defect Effects 0.000 description 1
• 238000009413 insulation Methods 0.000 description 1
• 239000007788 liquid Substances 0.000 description 1
• 230000005499 meniscus Effects 0.000 description 1
• 239000000203 mixture Substances 0.000 description 1
• 239000010453 quartz Substances 0.000 description 1
• 238000007650 screen-printing Methods 0.000 description 1
• 150000003376 silicon Chemical class 0.000 description 1
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
• 239000000758 substrate Substances 0.000 description 1
• 238000009736 wetting Methods 0.000 description 1