JPH0479966B2 - - Google Patents
Info
- Publication number
- JPH0479966B2 JPH0479966B2 JP16957788A JP16957788A JPH0479966B2 JP H0479966 B2 JPH0479966 B2 JP H0479966B2 JP 16957788 A JP16957788 A JP 16957788A JP 16957788 A JP16957788 A JP 16957788A JP H0479966 B2 JPH0479966 B2 JP H0479966B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- molten silicon
- solidified
- jig
- mold nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 93
- 229910052710 silicon Inorganic materials 0.000 claims description 93
- 239000010703 silicon Substances 0.000 claims description 93
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 238000002844 melting Methods 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- 238000012790 confirmation Methods 0.000 claims description 9
- 229920001296 polysiloxane Polymers 0.000 claims description 9
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 description 31
- 239000013078 crystal Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000005266 casting Methods 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 7
- 239000011148 porous material Substances 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16957788A JPH0218315A (ja) | 1988-07-07 | 1988-07-07 | 多結晶シリコンシートの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16957788A JPH0218315A (ja) | 1988-07-07 | 1988-07-07 | 多結晶シリコンシートの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0218315A JPH0218315A (ja) | 1990-01-22 |
| JPH0479966B2 true JPH0479966B2 (enrdf_load_stackoverflow) | 1992-12-17 |
Family
ID=15889060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16957788A Granted JPH0218315A (ja) | 1988-07-07 | 1988-07-07 | 多結晶シリコンシートの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0218315A (enrdf_load_stackoverflow) |
-
1988
- 1988-07-07 JP JP16957788A patent/JPH0218315A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0218315A (ja) | 1990-01-22 |