JPH0221136B2 - - Google Patents
Info
- Publication number
- JPH0221136B2 JPH0221136B2 JP56107134A JP10713481A JPH0221136B2 JP H0221136 B2 JPH0221136 B2 JP H0221136B2 JP 56107134 A JP56107134 A JP 56107134A JP 10713481 A JP10713481 A JP 10713481A JP H0221136 B2 JPH0221136 B2 JP H0221136B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- thin film
- silicon oxide
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10W10/011—
-
- H10W10/10—
Landscapes
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56107134A JPS589336A (ja) | 1981-07-10 | 1981-07-10 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56107134A JPS589336A (ja) | 1981-07-10 | 1981-07-10 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS589336A JPS589336A (ja) | 1983-01-19 |
| JPH0221136B2 true JPH0221136B2 (enExample) | 1990-05-11 |
Family
ID=14451360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56107134A Granted JPS589336A (ja) | 1981-07-10 | 1981-07-10 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS589336A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05335638A (ja) * | 1992-05-29 | 1993-12-17 | Sumitomo Electric Ind Ltd | ジョセフソン接合構造体およびその作製方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5259589A (en) * | 1975-11-11 | 1977-05-17 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
| JPS5368080A (en) * | 1976-11-29 | 1978-06-17 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1981
- 1981-07-10 JP JP56107134A patent/JPS589336A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS589336A (ja) | 1983-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2558931B2 (ja) | 半導体装置およびその製造方法 | |
| US5640041A (en) | Stress relaxation in dielectric before metallization | |
| US5591672A (en) | Annealing of titanium - titanium nitride in contact hole | |
| US5705442A (en) | Optimized tungsten contact plug process via use of furnace annealed barrier layers | |
| US5698468A (en) | Silicidation process with etch stop | |
| JP2623659B2 (ja) | Mis型トランジスタの製造方法 | |
| JPS59165434A (ja) | 半導体装置の製造方法 | |
| JPH0221136B2 (enExample) | ||
| JP3305490B2 (ja) | 半導体装置の製造方法 | |
| JPH0210730A (ja) | 集積回路チップ上の電界効果トランジスタ用のフィールド・アイソレーション形成方法と構造 | |
| JP2788889B2 (ja) | 半導体装置における分離形成方法 | |
| JP4018843B2 (ja) | 半導体装置の製造方法 | |
| JPH0897212A (ja) | 半導体装置の製造方法 | |
| JPH06232155A (ja) | 半導体装置の製造方法 | |
| JPS61288427A (ja) | 半導体装置の製造方法 | |
| JPS6213047A (ja) | 半導体装置の製造方法 | |
| JP2568864B2 (ja) | Mis型半導体装置の製造方法 | |
| KR960006434B1 (ko) | 트렌치 아이솔레이션 방법 | |
| KR0167674B1 (ko) | 반도체 소자의 소자분리막 형성방법 | |
| JP2667840B2 (ja) | 化合物半導体装置の製造方法 | |
| JPS6146964B2 (enExample) | ||
| JP2668380B2 (ja) | 半導体装置の製造方法 | |
| JPH1126395A (ja) | 半導体装置及びその製造方法 | |
| JPS60110163A (ja) | Mos型トランジスタの製造方法 | |
| JPH0527272B2 (enExample) |