JPH0219619B2 - - Google Patents
Info
- Publication number
- JPH0219619B2 JPH0219619B2 JP15108980A JP15108980A JPH0219619B2 JP H0219619 B2 JPH0219619 B2 JP H0219619B2 JP 15108980 A JP15108980 A JP 15108980A JP 15108980 A JP15108980 A JP 15108980A JP H0219619 B2 JPH0219619 B2 JP H0219619B2
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen
- epitaxial film
- temperature
- single crystal
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 41
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical group [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 11
- 229910005540 GaP Inorganic materials 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 10
- 238000001947 vapour-phase growth Methods 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15108980A JPS5775421A (en) | 1980-10-28 | 1980-10-28 | Method of vapor growth compound semiconductor epitaxial film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15108980A JPS5775421A (en) | 1980-10-28 | 1980-10-28 | Method of vapor growth compound semiconductor epitaxial film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5775421A JPS5775421A (en) | 1982-05-12 |
| JPH0219619B2 true JPH0219619B2 (zh) | 1990-05-02 |
Family
ID=15511081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15108980A Granted JPS5775421A (en) | 1980-10-28 | 1980-10-28 | Method of vapor growth compound semiconductor epitaxial film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5775421A (zh) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5079258A (zh) * | 1973-11-10 | 1975-06-27 |
-
1980
- 1980-10-28 JP JP15108980A patent/JPS5775421A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5079258A (zh) * | 1973-11-10 | 1975-06-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5775421A (en) | 1982-05-12 |
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