JPH02194685A - 半導体レーザの製造方法 - Google Patents
半導体レーザの製造方法Info
- Publication number
- JPH02194685A JPH02194685A JP1434989A JP1434989A JPH02194685A JP H02194685 A JPH02194685 A JP H02194685A JP 1434989 A JP1434989 A JP 1434989A JP 1434989 A JP1434989 A JP 1434989A JP H02194685 A JPH02194685 A JP H02194685A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- evaporation prevention
- evaporation
- upper cladding
- prevention layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000001704 evaporation Methods 0.000 claims abstract description 52
- 230000008020 evaporation Effects 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000000137 annealing Methods 0.000 claims abstract description 20
- 238000005253 cladding Methods 0.000 claims description 41
- 230000002265 prevention Effects 0.000 claims description 39
- 230000031700 light absorption Effects 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 10
- 239000002019 doping agent Substances 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 3
- 230000003449 preventive effect Effects 0.000 abstract 3
- 230000010748 Photoabsorption Effects 0.000 abstract 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 4
- 238000010030 laminating Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1434989A JPH02194685A (ja) | 1989-01-24 | 1989-01-24 | 半導体レーザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1434989A JPH02194685A (ja) | 1989-01-24 | 1989-01-24 | 半導体レーザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02194685A true JPH02194685A (ja) | 1990-08-01 |
| JPH0572116B2 JPH0572116B2 (enExample) | 1993-10-08 |
Family
ID=11858590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1434989A Granted JPH02194685A (ja) | 1989-01-24 | 1989-01-24 | 半導体レーザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02194685A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03268471A (ja) * | 1990-03-19 | 1991-11-29 | Sharp Corp | 半導体レーザおよびその製造方法 |
-
1989
- 1989-01-24 JP JP1434989A patent/JPH02194685A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03268471A (ja) * | 1990-03-19 | 1991-11-29 | Sharp Corp | 半導体レーザおよびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0572116B2 (enExample) | 1993-10-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081008 Year of fee payment: 15 |
|
| LAPS | Cancellation because of no payment of annual fees |