JPH0572116B2 - - Google Patents
Info
- Publication number
- JPH0572116B2 JPH0572116B2 JP1434989A JP1434989A JPH0572116B2 JP H0572116 B2 JPH0572116 B2 JP H0572116B2 JP 1434989 A JP1434989 A JP 1434989A JP 1434989 A JP1434989 A JP 1434989A JP H0572116 B2 JPH0572116 B2 JP H0572116B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- evaporation prevention
- semiconductor substrate
- prevention layer
- upper cladding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001704 evaporation Methods 0.000 claims description 47
- 238000005253 cladding Methods 0.000 claims description 44
- 230000008020 evaporation Effects 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 42
- 230000002265 prevention Effects 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 15
- 230000031700 light absorption Effects 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1434989A JPH02194685A (ja) | 1989-01-24 | 1989-01-24 | 半導体レーザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1434989A JPH02194685A (ja) | 1989-01-24 | 1989-01-24 | 半導体レーザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02194685A JPH02194685A (ja) | 1990-08-01 |
| JPH0572116B2 true JPH0572116B2 (enExample) | 1993-10-08 |
Family
ID=11858590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1434989A Granted JPH02194685A (ja) | 1989-01-24 | 1989-01-24 | 半導体レーザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02194685A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2717016B2 (ja) * | 1990-03-19 | 1998-02-18 | シャープ株式会社 | 半導体レーザおよびその製造方法 |
-
1989
- 1989-01-24 JP JP1434989A patent/JPH02194685A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02194685A (ja) | 1990-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5043049A (en) | Methods of forming ferroelectric thin films | |
| KR930004128B1 (ko) | 반도체 레이저 | |
| JPS62177909A (ja) | 半導体装置の製造方法 | |
| JP3337494B2 (ja) | 太陽電池の製造方法及び薄膜太陽電池 | |
| JPH0422127A (ja) | 薄膜トランジスタの製造方法 | |
| KR102533893B1 (ko) | 가돌리늄이 도핑된 이산화 하프늄 3x3 크로스바 멤리스터 어레이 제조 방법 및 이의 3x3 크로스바 멤리스터 어레이 | |
| JPH0616501B2 (ja) | デバイスの製造方法 | |
| JPH0656911B2 (ja) | 半導体レーザの製造方法 | |
| JPH02194685A (ja) | 半導体レーザの製造方法 | |
| JP3154430B2 (ja) | Ａｌ Ｇａ Ａｓ 薄膜成長方法 | |
| JPS6142987A (ja) | 半導体レ−ザの製造方法 | |
| JPS61105870A (ja) | 薄膜トランジスタの製造方法 | |
| JPH0137870B2 (enExample) | ||
| JP2599391B2 (ja) | 半導体発光素子の製造方法および半導体発光素子 | |
| JPH08139015A (ja) | ゲルマニウム薄膜成長法 | |
| JPS6142985A (ja) | 半導体レ−ザおよびその製造方法 | |
| JPS5975619A (ja) | 半導体回路素子の製造方法 | |
| JPH04196311A (ja) | 半導体装置の製造方法 | |
| JPH088252A (ja) | 半導体素子の製造方法 | |
| JPS59171115A (ja) | 半導体装置基板の製造方法 | |
| JPS59224122A (ja) | 化合物半導体のｐ型層の形成方法 | |
| JPS59114828A (ja) | 酸化シリコン膜の製造方法 | |
| JPH08158042A (ja) | ゲルマニウム薄膜成長方法 | |
| JPH0327584A (ja) | 半導体レーザの製造方法 | |
| JPS63278217A (ja) | 半導体基板の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081008 Year of fee payment: 15 |
|
| LAPS | Cancellation because of no payment of annual fees |