JPH02188299A - Ic module and ic card - Google Patents
Ic module and ic cardInfo
- Publication number
- JPH02188299A JPH02188299A JP1009477A JP947789A JPH02188299A JP H02188299 A JPH02188299 A JP H02188299A JP 1009477 A JP1009477 A JP 1009477A JP 947789 A JP947789 A JP 947789A JP H02188299 A JPH02188299 A JP H02188299A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- pattern layer
- substrate
- card
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000011347 resin Substances 0.000 claims abstract description 17
- 229920005989 resin Polymers 0.000 claims abstract description 17
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 20
- 238000005452 bending Methods 0.000 abstract description 25
- 239000000853 adhesive Substances 0.000 description 14
- 230000001070 adhesive effect Effects 0.000 description 14
- 238000007747 plating Methods 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/0772—Physical layout of the record carrier
- G06K19/07728—Physical layout of the record carrier the record carrier comprising means for protection against impact or bending, e.g. protective shells or stress-absorbing layers around the integrated circuit
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07745—Mounting details of integrated circuit chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Credit Cards Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明はＩＣモジュールおよびＩＣモジュールを装着し
たＩＣカードに関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to an IC module and an IC card equipped with the IC module.
（従来の技術）
近年、マイクロコンピュータ、メモリなどのＩＣチップ
を装着したチップカード、メモリカード、マイコンカー
ドあるいは電子カードと呼ばれるカード（以下、単にＩ
Ｃカードという）に関する研究が種々進められている。(Prior Art) In recent years, cards called chip cards, memory cards, microcomputer cards, or electronic cards (hereinafter simply referred to as I/O cards) equipped with IC chips such as microcomputers and memory
A variety of research is underway regarding the C-card.
このようなＩＣカードは、従来の磁気カードに比べて、
その記憶容量が大きいことから、銀行関係では預金通帳
に代わり預貯金の履歴を、そしてクレジット関係では買
物などの取引履歴を記憶させようと考えている。Compared to conventional magnetic cards, such IC cards have
Because of its large storage capacity, banks are considering using it to store the history of deposits and savings in place of passbooks, and credit cards are considering storing transaction history such as shopping.
このようなＩＣカードは、ＩＣチ・ツブが搭載されたＩ
Ｃモジュールと、このＩＣモジュール装着用の凹部が形
成されたカード基材とから構成される装置
このうち、ＩＣモジュールは基板の一方の面に外部端子
を設け、基板の他方の面に回路パタン層およびＩＣチッ
プを設け、このＩＣチップならびにＩＣチップと回路パ
タン層との間の配線部の周囲を樹脂モールドすることに
よって形成されている。ＩＣチップは基板の略中央部分
にダイボンド接着剤等を介して接着されており、樹脂モ
ールドはこのＩＣチップを覆って行われるため、ＩＣモ
ジュールは全体として断面が凸形状をなしている。Such an IC card is an IC card equipped with an IC chip.
A device consisting of a C module and a card base material in which a recess for mounting the IC module is formed.Among these, the IC module has external terminals on one side of the board and a circuit pattern layer on the other side of the board. and an IC chip, and the IC chip and the periphery of the wiring section between the IC chip and the circuit pattern layer are molded with resin. The IC chip is bonded to a substantially central portion of the substrate via a die-bonding adhesive or the like, and resin molding is performed to cover the IC chip, so that the IC module as a whole has a convex cross section.
さらに、基板の樹脂モールドされていない部分にスルー
ホールが複数貫通して設けられ、このスルーホール内面
に形成された導電メツキ（例えば銅メツキ−ニッケルメ
ッキ＋金メツキを施したもの）によって、外部端子と回
路パタン層とが導通される。Furthermore, multiple through holes are provided in the parts of the board that are not resin-molded, and conductive plating (for example, copper plating - nickel plating + gold plating) formed on the inner surface of the through holes allows external terminals to be connected. and the circuit pattern layer are electrically connected.
（発明が解決しようとする課題）
上述のように、ＩＣチップは基板の略中央部分にダイボ
ンド接着剤等を介して接着されている。(Problems to be Solved by the Invention) As described above, the IC chip is bonded to the substantially central portion of the substrate via a die-bonding adhesive or the like.
ところで、一般にＩＣカードは使用中、曲げ作用を受け
ることになるが、この曲げ作用はカード基材からＩＣモ
ジュールに伝達され、さらにＩＣモジュールに伝達され
た曲げ作用は、基板からこの基板に接着されたＩＣチッ
プに伝達される。Incidentally, while IC cards are generally subjected to bending action during use, this bending action is transmitted from the card base material to the IC module, and furthermore, the bending action transmitted to the IC module is transferred from the substrate to the substrate. is transmitted to the IC chip.
この場合、カード基材がＩＳＯ規格で０，７６龍と極め
て薄く定められているので、ＩＣカードに加わる曲げ作
用が大きくなると、基板からＩＣチップに伝達される曲
げ作用も大きくなり、ＩＣチップが破損してしまうこと
がある。In this case, since the card base material is specified to be extremely thin by ISO standards at 0.76 mm, as the bending force applied to the IC card increases, the bending force transmitted from the substrate to the IC chip also increases, causing the IC chip to It may get damaged.
本発明はこのような点を考慮してなされたものであり、
ＩＣカードに大きな曲げ作用が加わってもＩＣチップの
破損を確実に防止することができるＩＣモジュールおよ
びＩＣカードを提供することを目的とする。The present invention has been made in consideration of these points,
To provide an IC module and an IC card that can reliably prevent damage to an IC chip even if a large bending action is applied to the IC card.
（課題を解決するための手段）
本発明は、基板の一方の面に外部端子を設け、前記基板
の他方の面にＩＣチップおよび回路パタン層を設け、こ
のＩＣチップならびにＩＣチップと回路パタン層との間
の配線部周囲を樹脂モールドしてなるＩＣモジュールで
あって、前記基板の前記ＩＣチップ側の面であってＩＣ
チップの外側略全域に補強パタン層を設け、この補強パ
タン層に基板の一方の端縁から他方の端縁まで連続して
延びる応力集中溝を形成し、前記回路パターン層をこの
応力集中溝内に配置したことを特徴とするＩＣモジュー
ル、およびカード基材の表面に形成された凹部内に上記
ＩＣモジュールを装着してなるＩＣカードである。(Means for Solving the Problems) The present invention provides an external terminal on one side of a substrate, an IC chip and a circuit pattern layer on the other side of the substrate, and the IC chip and the IC chip and circuit pattern layer. An IC module in which the periphery of the wiring part between the substrate and the IC chip is molded with resin,
A reinforcing pattern layer is provided on substantially the entire outside of the chip, a stress concentration groove is formed in this reinforcement pattern layer that extends continuously from one edge of the substrate to the other edge, and the circuit pattern layer is placed in the stress concentration groove. and an IC card in which the IC module is mounted in a recess formed on the surface of a card base material.
（作 用）
ＩＣカードに曲げ作用が働くと、基板はＩＣチップの外
側に位置する応力集中溝部分で変形し、曲げ作用はこの
応力集中構分部で吸収される。(Function) When a bending action is applied to the IC card, the substrate is deformed at the stress concentration groove portion located outside the IC chip, and the bending action is absorbed by this stress concentration component.
（実施例）
以下、図面を参照して本発明の実施例について説明する
。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図乃至第３図は、本発明の一実施例を示す図である
。ここで第１図はＩＣカードの断面図、第２図はＩＣモ
ジュールの底面図、第３図（ａ）（ｂ）は曲げ作用によ
るＩＣモジュールの変形状態を示す図である。1 to 3 are diagrams showing one embodiment of the present invention. Here, FIG. 1 is a sectional view of the IC card, FIG. 2 is a bottom view of the IC module, and FIGS. 3(a) and 3(b) are diagrams showing the deformation state of the IC module due to bending action.
第１図および第２図に示すように、柔軟性ならびに強度
にすぐれた材料からなる基板（例えば、ガラスエポキシ
、ガラスＢＴレジン、ポリイミド等）１２の一方の面に
外部端子１３が設けられ、他方の面に帯状の回路パタン
層１５が設けられ、このようにしてＩＣモジュール１１
が形成されている。As shown in FIGS. 1 and 2, an external terminal 13 is provided on one side of a substrate 12 made of a material with excellent flexibility and strength (e.g., glass epoxy, glass BT resin, polyimide, etc.), and an external terminal 13 is provided on the other side. A strip-shaped circuit pattern layer 15 is provided on the surface of the IC module 11.
is formed.
この外部端子１３および回路パタン層１５は、いずれも
銅箔に銅メツキ、ニッケルメッキ、および金メツキを施
して形成されている。また、外部端子１３には、この外
部端子１３を複数の領域に区画する絶縁溝１３ａが形成
されている。The external terminals 13 and the circuit pattern layer 15 are both formed by applying copper plating, nickel plating, and gold plating to copper foil. Furthermore, an insulating groove 13a is formed in the external terminal 13 to divide the external terminal 13 into a plurality of regions.
また、基板１・２の回路パタン層１５側の面に、ＩＣチ
ップ１７がグイボンディング接着剤２０を介して接着固
定され、回路パタン層１５との間でボンディングワイヤ
１８によって必要な配線が行われている。またＩＣチッ
プ１７ならびにボンディングワイヤ１８を含む配線部の
周囲が、モールド用樹脂により樹脂モールドされて樹脂
モールド部１９が形成されている。なお、基板１２上の
樹脂モールド部１９周縁に、樹脂モールド部１９と基板
１２との密着性を高めるため、保護レジスト層１６が設
けられている。Further, an IC chip 17 is adhesively fixed to the circuit pattern layer 15 side surface of the substrates 1 and 2 via a bonding adhesive 20, and necessary wiring is performed between it and the circuit pattern layer 15 using a bonding wire 18. ing. Further, the periphery of the wiring section including the IC chip 17 and the bonding wires 18 is resin-molded with a molding resin to form a resin mold section 19. Note that a protective resist layer 16 is provided on the periphery of the resin molded portion 19 on the substrate 12 in order to improve the adhesion between the resin molded portion 19 and the substrate 12.
この場合、樹脂モールドはトランスファーモールド法に
より行うことが好ましく、樹脂モールド部１９の寸法な
らびに形状は、ＩＣチップ１７や後述するカード基材３
０に合せて適宜決定される。In this case, the resin molding is preferably performed by a transfer molding method, and the dimensions and shape of the resin molded portion 19 are determined by the size and shape of the IC chip 17 and the card base material 3 described later.
It is determined appropriately according to 0.
また、樹脂モールド部１９の高さは後述する第２四部３
５ｂの深さよりも小さくなっている。In addition, the height of the resin molded part 19 is determined by the second fourth part 3, which will be described later.
The depth is smaller than the depth of 5b.
また、外部端子１３、基板１２、および回路パタン層１
５を貫通してスルーホール１４が複数段けられ、このス
ルーホール１４内面には外部端子１３と回路パタン層１
５とを導通させる導電メツキ１４ａが形成されている。Also, external terminals 13, substrate 12, and circuit pattern layer 1
A plurality of through holes 14 are formed through the through hole 14, and an external terminal 13 and a circuit pattern layer 1 are formed on the inner surface of the through hole 14.
A conductive plating 14a is formed to provide electrical continuity with the conductive plate 5.
さらに、第２図に示すように基板１２の底面（ＩＣチッ
プ１７側の面）には、樹脂モールド部１９の外側略全域
に（ＩＣチップ１７の外側に）補強パタン層２１が設け
られている。この補強パタン層２１は回路パタン層１５
と同様、銅箔に銅メツキ、ニッケルメッキ、および金メ
ツキを施して形成されており、基板１２の曲げ強度を補
強するものである。Furthermore, as shown in FIG. 2, a reinforcing pattern layer 21 is provided on the bottom surface (the surface on the IC chip 17 side) of the substrate 12 over substantially the entire area outside the resin molded part 19 (outside the IC chip 17). . This reinforcing pattern layer 21 is a circuit pattern layer 15.
Similarly, it is formed by applying copper plating, nickel plating, and gold plating to copper foil, and reinforces the bending strength of the board 12.
また、補強パタン層２１には、カード基材３０の長手方
向りおよびこれと直交する方向に、それぞれ基板の一方
の端縁から他方の端縁まで連続的に延びる応力集中溝２
３ａ、２３ｂが複数形成されている。このうち、回路パ
タン層１５はカード基材３０の長手方向の応力集中溝２
３ｂ内に配置されており、このため回路パタン層１５と
補強パタン層２１とは短絡しないようになっている。The reinforcing pattern layer 21 also includes stress concentration grooves 2 that extend continuously from one edge of the substrate to the other edge in the longitudinal direction of the card substrate 30 and in a direction perpendicular thereto.
A plurality of 3a and 23b are formed. Of these, the circuit pattern layer 15 has stress concentration grooves 2 in the longitudinal direction of the card base material 30.
3b, so that the circuit pattern layer 15 and the reinforcing pattern layer 21 are not short-circuited.
な、お、補強パタン２１は、回路パタン層１５を基板１
２にエツチング形成する際同時に形成される。このため
、補強パタン２１を形成することにより製造工程が増加
することはない。Incidentally, the reinforcing pattern 21 connects the circuit pattern layer 15 to the substrate 1.
It is formed at the same time as the etching process. Therefore, forming the reinforcing pattern 21 does not increase the number of manufacturing steps.
このように形成されたＩＣモジュール１１は、全体とし
て断面凸形状をなしている。The IC module 11 formed in this manner has a convex cross-section as a whole.
他方、合成樹脂製のカード基材３０の表面に四部３５が
形成され、この凹部３５に接着剤３４を介してＩＣモジ
ュール１１を装着することによりＩＣカード１０が構成
される。この場合、カード基材３０の長手方向と基板１
２の長手方向とは一致している（第１図および第２図）
。On the other hand, four portions 35 are formed on the surface of a card base material 30 made of synthetic resin, and the IC card 10 is constructed by attaching the IC module 11 to the recessed portion 35 via an adhesive 34. In this case, the longitudinal direction of the card base material 30 and the substrate 1
The longitudinal direction of 2 is the same (Figures 1 and 2).
.
カード基材３０の凹部３５は比較的浅い形状の第１凹部
３５ａと比較的深い形状の第２凹部３５ｂとからなり、
このうち第２凹部３５ｂは主として樹脂モールド部１９
を装着する部分である。The recess 35 of the card base material 30 consists of a relatively shallow first recess 35a and a relatively deep second recess 35b,
Of these, the second recessed portion 35b is mainly formed by the resin molded portion 19.
This is the part where you attach it.
この場合、第２凹部３５ｂの深さは、ＩＣモジュール１
１が装着されたときにＩＣモジュール１１の樹脂モール
ド部１９と第２凹部３５ｂとの間に空間が生ずるか、あ
るいは接着状態ないし非接着状態で接触するような深さ
であることが肝要である。In this case, the depth of the second recess 35b is the same as that of the IC module 1.
It is important that when the IC module 1 is mounted, a space is created between the resin molded part 19 of the IC module 11 and the second recessed part 35b, or the depth is such that they contact each other in an adhesive or non-adhesive state. .
また、カード基材３０に形成される凹部３５は、埋設さ
れるＩＣモジュール１１が挿入されやすいように、該Ｉ
Ｃモジュール１１と同等かあるいは若干大きいことが望
ましい（０，０５〜０．１■ｍ程度）。Further, the recess 35 formed in the card base material 30 is formed so that the IC module 11 to be buried therein can be easily inserted.
It is desirable that it be equal to or slightly larger than the C module 11 (about 0.05 to 0.1 m).
次にＩＣカードの製造方法について説明する。Next, a method for manufacturing an IC card will be explained.
まず、カード基材３０に形成された第１凹部３５ａの底
面に接着剤３４を配置し、この接着剤３４上にＩＣモジ
ュール１１を挿入配置する。続いて、ホットスタンバ−
（図示せず）により外部端子１３の表面のみを局部的に
熱押圧（たとえば、１００〜１７０℃、５〜１５ｋｇ／
ｃシ、５秒で充分）することにより、ＩＣモジュール１
１をカード基材３０の凹部３５内に装着固定してＩＣカ
ード１０を得ることができる。First, the adhesive 34 is placed on the bottom surface of the first recess 35a formed in the card base material 30, and the IC module 11 is inserted and placed on the adhesive 34. Next, hot stand bar
(not shown) to locally heat press only the surface of the external terminal 13 (for example, 100 to 170°C, 5 to 15 kg/
5 seconds is enough), the IC module 1
1 is mounted and fixed in the recess 35 of the card base material 30 to obtain the IC card 10.
この場合、接着剤３４は、たとえばポリエステル系の熱
接着シートが好ましく用いられる。In this case, the adhesive 34 is preferably a polyester thermal adhesive sheet, for example.
その他、接着剤３４として、不織布の両面にアクリル系
粘着剤を塗布した両面粘着テープや常温硬化型ウレタン
系接着剤により形成することもできる。この場合は熱押
圧をせず、常温抑圧を行なってもよい。In addition, the adhesive 34 can also be formed using a double-sided adhesive tape in which an acrylic adhesive is applied on both sides of a nonwoven fabric, or a room-temperature curing urethane adhesive. In this case, room temperature suppression may be performed without heat pressing.
次に第３図（ａ）（ｂ）によりＩＣカード使用時の曲げ
作用について説明する。Next, the bending action when using an IC card will be explained with reference to FIGS. 3(a) and 3(b).
ＩＣカード１０がカード基材３０の長手方向の曲げ作用
を受けた場合、カード基材３０から基板１２に加わる曲
げ作用は応力集中溝２３のうちカード基材３０の長手方
向に直交する応力集中溝２３ｂ部分で吸収される。When the IC card 10 is subjected to a bending action in the longitudinal direction of the card base material 30, the bending action applied from the card base material 30 to the substrate 12 is applied to the stress concentration grooves 23 that are perpendicular to the longitudinal direction of the card base material 30. It is absorbed in the 23b portion.
すなわち、基板１２の応力集中溝２３ｂ部分は、補強パ
タン２１部分に比較して剛性が低下して曲げ作用により
変形しやすくなっている。That is, the stress concentration groove 23b portion of the substrate 12 has lower rigidity than the reinforcing pattern 21 portion, and is easily deformed by bending action.
このため、ＩＣカード１０がカード基材３０の長平方向
の曲げ作用を大きく受けると、第３図（ａ）または（ｂ
）のように、基板１２はＩＣチップ１７の外側に位置す
る応力集中溝２３ｂ部分で変形し、曲げ作用がこの応力
集中溝２，３ｂ部分で吸収される。Therefore, if the IC card 10 is subjected to a large bending action in the longitudinal direction of the card base material 30,
), the substrate 12 is deformed at the stress concentration grooves 23b located outside the IC chip 17, and the bending action is absorbed by the stress concentration grooves 2 and 3b.
同様にＩＣカード１０がカード基材３０の長平方向に直
交する方向の曲げ作用を受けた場合、基板１２はＩＣチ
ップ１７の外側に位置する応力集中溝２３ａ部分で変形
し、曲げ作用がこの応力集中溝２３ａ部分で吸収される
。Similarly, when the IC card 10 is subjected to a bending action in a direction perpendicular to the longitudinal direction of the card base material 30, the substrate 12 is deformed at the stress concentration groove 23a located outside the IC chip 17, and the bending action is caused by this stress. It is absorbed in the concentrated groove 23a portion.
このように本実施例によれば、ＩＣカード１０に加わる
曲げ作用が基板１２の応力集中溝２３部分で吸収される
ので、曲げ作用によるＩＣチップ１７の破損を確実に防
止することができる。As described above, according to this embodiment, the bending action applied to the IC card 10 is absorbed by the stress concentration groove 23 portion of the substrate 12, so that damage to the IC chip 17 due to the bending action can be reliably prevented.
以上説明したように、本発明によればＩＣカードに曲げ
作用が加わると、剛性の低い基板の応力集中溝部分が変
形して曲げ作用が吸収される。この応力集中溝はＩＣチ
ップの外側に位置しているので、ＩＣカードに加わる曲
げ作用によるＩＣチップの破損を確実に防止できる。As described above, according to the present invention, when a bending action is applied to the IC card, the stress concentration groove portion of the substrate having low rigidity is deformed and the bending action is absorbed. Since this stress concentration groove is located on the outside of the IC chip, damage to the IC chip due to bending action applied to the IC card can be reliably prevented.
第１図乃至第３図は本発明の一実施例を示す図であり、
第１図はＩＣカードの側断面図、第２図は ＩＣモジュ
ールの底面図、第３図（ａ）（ｂ）は曲げ作用によるＩ
Ｃモジュールの変形状態を示す図である。
１０・・・ＩＣカード、１１・・・ＩＣモジュール、１
２・・・基板、１３・・・外部端子、１３ａ・・・絶縁
溝、１４〜・・スルーホール、１４ａ・・・導電メ・ツ
キ、１５・・・回路パタン層、１６・・・ソルダレジス
ト層、１７・・・ＩＣチップ、１８・・・ボンディング
ワイヤ、１つ・・・樹脂モールド部、２０・・・ダイボ
ンディング接着剤、２１・・・補強パタン層、２３ａ、
２３ｂ・・・応力集中溝、３０・・・カード基材、３４
・・・接着剤、３５・・・凹部。1 to 3 are diagrams showing one embodiment of the present invention,
Figure 1 is a side sectional view of the IC card, Figure 2 is a bottom view of the IC module, and Figures 3 (a) and (b) are I
It is a figure which shows the deformed state of C module. 10...IC card, 11...IC module, 1
2... Board, 13... External terminal, 13a... Insulating groove, 14... Through hole, 14a... Conductive metal plate, 15... Circuit pattern layer, 16... Solder resist Layer, 17... IC chip, 18... Bonding wire, one... Resin mold part, 20... Die bonding adhesive, 21... Reinforcement pattern layer, 23a,
23b... Stress concentration groove, 30... Card base material, 34
...adhesive, 35...recess.
Claims (2)
方の面にＩＣチップおよび回路パタン層を設け、このＩ
ＣチップならびにＩＣチップと回路パタン層との間の配
線部周囲を樹脂モールドしてなるＩＣモジュールにおい
て、前記基板の前記ＩＣチップ側の面であってＩＣチッ
プの外側略全域に補強パタン層を設け、この補強パタン
層に基板の一方の端縁から他方の端縁まで連続して延び
る応力集中溝を形成し、前記回路パターン層をこの応力
集中溝内に配置したことを特徴とするＩＣモジュール。1. An external terminal is provided on one side of the substrate, an IC chip and a circuit pattern layer are provided on the other side of the substrate, and this I
In an IC module in which the periphery of a wiring part between a C chip and an IC chip and a circuit pattern layer is molded with resin, a reinforcing pattern layer is provided on substantially the entire area outside the IC chip on the surface of the substrate on the IC chip side. An IC module characterized in that a stress concentration groove extending continuously from one edge of the substrate to the other edge of the substrate is formed in the reinforcing pattern layer, and the circuit pattern layer is disposed within the stress concentration groove.
記載のＩＣモジュールを装着してなるＩＣカード。2. Claim 1 is placed within the recess formed on the surface of the card base material.
An IC card equipped with the listed IC module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1009477A JPH02188299A (en) | 1989-01-18 | 1989-01-18 | Ic module and ic card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1009477A JPH02188299A (en) | 1989-01-18 | 1989-01-18 | Ic module and ic card |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02188299A true JPH02188299A (en) | 1990-07-24 |
Family
ID=11721335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1009477A Pending JPH02188299A (en) | 1989-01-18 | 1989-01-18 | Ic module and ic card |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02188299A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2745930A1 (en) * | 1996-03-11 | 1997-09-12 | Solaic Sa | Integrated circuit smart card with part floating support for semiconductor |
-
1989
- 1989-01-18 JP JP1009477A patent/JPH02188299A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2745930A1 (en) * | 1996-03-11 | 1997-09-12 | Solaic Sa | Integrated circuit smart card with part floating support for semiconductor |
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