JPH0218577B2 - - Google Patents

Info

Publication number
JPH0218577B2
JPH0218577B2 JP58146605A JP14660583A JPH0218577B2 JP H0218577 B2 JPH0218577 B2 JP H0218577B2 JP 58146605 A JP58146605 A JP 58146605A JP 14660583 A JP14660583 A JP 14660583A JP H0218577 B2 JPH0218577 B2 JP H0218577B2
Authority
JP
Japan
Prior art keywords
thin film
etching
photoresist
electrode
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58146605A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6039833A (ja
Inventor
Shunji Seki
Takashi Umigami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58146605A priority Critical patent/JPS6039833A/ja
Publication of JPS6039833A publication Critical patent/JPS6039833A/ja
Publication of JPH0218577B2 publication Critical patent/JPH0218577B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Inorganic Insulating Materials (AREA)
  • Drying Of Semiconductors (AREA)
JP58146605A 1983-08-12 1983-08-12 Ｔａ↓２Ｏ↓５薄膜のエツチング方法 Granted JPS6039833A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58146605A JPS6039833A (ja) 1983-08-12 1983-08-12 Ｔａ↓２Ｏ↓５薄膜のエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58146605A JPS6039833A (ja) 1983-08-12 1983-08-12 Ｔａ↓２Ｏ↓５薄膜のエツチング方法

Publications (2)

Publication Number Publication Date
JPS6039833A JPS6039833A (ja) 1985-03-01
JPH0218577B2 true JPH0218577B2 (enExample) 1990-04-26

Family

ID=15411505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58146605A Granted JPS6039833A (ja) 1983-08-12 1983-08-12 Ｔａ↓２Ｏ↓５薄膜のエツチング方法

Country Status (1)

Country Link
JP (1) JPS6039833A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260634U (enExample) * 1985-09-30 1987-04-15
JP2606900Y2 (ja) * 1993-01-08 2001-01-29 株式会社大林組 コンクリート打設用トレミー管

Also Published As

Publication number Publication date
JPS6039833A (ja) 1985-03-01

Similar Documents

Publication Publication Date Title
US4498953A (en) Etching techniques
US4310380A (en) Plasma etching of silicon
US4264409A (en) Contamination-free selective reactive ion etching or polycrystalline silicon against silicon dioxide
US5942446A (en) Fluorocarbon polymer layer deposition predominant pre-etch plasma etch method for forming patterned silicon containing dielectric layer
KR0185372B1 (ko) 반도체 제조방법
JPH05247673A (ja) 酸化物部分および窒化物部分を含む被処理体のエッチング方法
JP7507095B2 (ja) ドライエッチング方法
TW200300276A (en) Method of etching high aspect ratio features
JP2012500480A (ja) バリア層除去方法及び装置
JPS6352118B2 (enExample)
JPH0786242A (ja) 半導体装置の製造方法
US6686292B1 (en) Plasma etch method for forming uniform linewidth residue free patterned composite silicon containing dielectric layer/silicon stack layer
KR100505175B1 (ko) 규화 루테늄 처리방법
JP3094470B2 (ja) ドライエッチング方法
JPH0218577B2 (enExample)
JPH0432228A (ja) ドライエッチング方法およびこれを用いた半導体装置の製造方法
JPH05251399A (ja) 枚葉式エッチャーによるシリコン窒化膜のエッチング方法
US5292402A (en) Masking material for applications in plasma etching
KR0168208B1 (ko) 다중합체 제거방법
JPH06295993A (ja) ドライエッチング方法
WO2005071722A1 (en) Selective etch of films with high dielectric constant
JPH07120649B2 (ja) コンタクトホールの形成方法
JPH0290521A (ja) 半導体装置の製造方法
KR20010112086A (ko) 반도체 장치의 제조 방법
JPH01223733A (ja) 炭化チタン系膜及び窒化チタン系膜のエッチング方法