JPH02167780A - Information recording medium - Google Patents
Information recording mediumInfo
- Publication number
- JPH02167780A JPH02167780A JP63322046A JP32204688A JPH02167780A JP H02167780 A JPH02167780 A JP H02167780A JP 63322046 A JP63322046 A JP 63322046A JP 32204688 A JP32204688 A JP 32204688A JP H02167780 A JPH02167780 A JP H02167780A
- Authority
- JP
- Japan
- Prior art keywords
- film
- atomic
- recording medium
- recording film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 7
- 239000000956 alloy Substances 0.000 claims abstract description 7
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- 239000000203 mixture Substances 0.000 abstract description 5
- 229910001215 Te alloy Inorganic materials 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract description 2
- 239000012780 transparent material Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 25
- 239000011669 selenium Substances 0.000 description 12
- 229930195733 hydrocarbon Natural products 0.000 description 9
- 150000002430 hydrocarbons Chemical class 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 8
- 239000004215 Carbon black (E152) Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910052711 selenium Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052714 tellurium Inorganic materials 0.000 description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910001370 Se alloy Inorganic materials 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- -1 alkyl selenium Chemical compound 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910015369 AuTe Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24328—Carbon
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2437—Non-metallic elements
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の目的]
(産業上の利用分野)
本発明は、例えばレーザ光の照射により情報の記録及び
再生が行われる情報記録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to an information recording medium on which information is recorded and reproduced by, for example, irradiation with laser light.
(従来の技術)
レーザ光の照射により情報が記録され、さらに、記録さ
れた情報の再生がなされる情報記録媒体の一種として、
Teを主成分とする記録膜を具備したものが開発されて
いる。さらに、このTeを主成分とする記録膜に炭素並
びに水素を含んだ記録膜が開発され、実用化に至ってい
る(特開昭58−9234号公報参照)。(Prior Art) As a type of information recording medium, information is recorded by irradiation with laser light and the recorded information is reproduced.
A device equipped with a recording film containing Te as a main component has been developed. Furthermore, a recording film containing carbon and hydrogen in addition to the Te-based recording film has been developed and put into practical use (see Japanese Patent Laid-Open No. 58-9234).
この記録膜を作成する際には、テルル(Te )を炭化
水素ガスを含む雰囲気中でスパッタする。When creating this recording film, tellurium (Te) is sputtered in an atmosphere containing hydrocarbon gas.
すると、Te単体の膜(Te膜)よりも高感度でかつ耐
酸化性能に優れた記録膜(以下Te −C膜と称す)が
得られる。この記録膜は、非晶質膜であり、テルル(T
e ) 、炭素(C)及び水素(H)を含み、また少な
くとも炭素(C)と水素(H)は化学結合していること
が分っている。この記録膜は、Te膜にならってテルル
(Te )と炭化水素をソースとする蒸着(プラズマを
用いない)で形成しようとしても形成することができず
、プラズマを利用して初めて得られる。これは、炭化水
素ガスがプラズマ中で一旦分解した後、炭素(C)と水
素(H)が化学反応をして成膜されるためであり、これ
が光記録膜形成時の大きな特徴となっている。As a result, a recording film (hereinafter referred to as a Te-C film) having higher sensitivity and superior oxidation resistance than a film containing only Te (Te film) is obtained. This recording film is an amorphous film, and is tellurium (T).
e) contains carbon (C) and hydrogen (H), and it is known that at least carbon (C) and hydrogen (H) are chemically bonded. This recording film cannot be formed even if it is attempted to be formed by vapor deposition using tellurium (Te) and hydrocarbons as sources (without using plasma), following the Te film, and can only be obtained by using plasma. This is because after the hydrocarbon gas is decomposed in the plasma, carbon (C) and hydrogen (H) undergo a chemical reaction to form a film, and this is a major feature when forming an optical recording film. There is.
(発明が解決しようとする課題)
上記のようなTe及び炭化水素からなる記録膜と、テル
ル(Te )で形成された記録膜とを65℃−90%の
高温高湿中(加速条件下)において比較すると、Te膜
はわずか1週間以内に酸化して光記録性能が損われるの
に対し、Te −C膜は1ケ月を経過しても膜の内部ま
では酸化されず安定であった。しかしながら、Te −
C膜も高温下(約75℃以上)では記録膜が結晶化して
表面がざらつくためにノイズが増大し、再生信号に与え
る影響が大きくなるといった問題点があった。(Problems to be Solved by the Invention) A recording film made of Te and hydrocarbons as described above and a recording film made of tellurium (Te) were heated at 65°C and 90% high temperature and high humidity (under accelerated conditions). In comparison, the Te film was oxidized within just one week and the optical recording performance was impaired, whereas the Te--C film was stable without being oxidized to the inside of the film even after one month had passed. However, Te −
The C film also has the problem that at high temperatures (about 75° C. or higher), the recording film crystallizes and the surface becomes rough, increasing noise and increasing the influence on reproduced signals.
本発明は、上記問題点を解決するために、高温高湿の環
境下においても、容易に表面がざらつくことのなく、長
寿命でしかも正確な再生信号を得ることのできる情報記
録媒体を提供することを目的とする。In order to solve the above-mentioned problems, the present invention provides an information recording medium that does not easily become rough even under high temperature and high humidity environments, has a long lifespan, and can obtain accurate reproduction signals. The purpose is to
[発明の構成]
(課題を解決するための手段)
本発明は上記目的を達成するために、基板と、この基板
上に形成され、レーザ光の照射により情報が記録される
、(Au * Te roo−3) 5ex(2≦x
≦47原子%、80≦y≦95原子%、5≦2≦20原
子%)合金並びに炭素及び水素を含む記録膜とを具備し
た情報記録媒体を提供するものである。[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the present invention includes a substrate, and a (Au*Te) film formed on the substrate and on which information is recorded by irradiation with a laser beam. roo-3) 5ex(2≦x
The present invention provides an information recording medium comprising a recording film containing an alloy (≦47 atom %, 80≦y≦95 atom %, 5≦2≦20 atom %) and a recording film containing carbon and hydrogen.
(作 用)
本発明の情報記録媒体に具備されている記録膜において
は、Au Te Se合金並びに炭素及び水素を含むこ
とにより、高温高湿下の状態においても、記録した情報
を安定に維持し、且つ記録感度の優れた情報記録媒体と
することができるものである。(Function) The recording film included in the information recording medium of the present invention stably maintains recorded information even under high temperature and high humidity conditions by containing Au Te Se alloy, carbon and hydrogen. , and an information recording medium with excellent recording sensitivity can be obtained.
(実施例) 以下、本発明の一実施例を図面を参照して説明する。(Example) Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第1図は、本発明の情報記録媒体の構造を概略的に示し
た断面図である。本発明の情報記録媒体は、基板13及
びこの基板13上に積層された記録膜14により構成さ
れるものである。FIG. 1 is a cross-sectional view schematically showing the structure of the information recording medium of the present invention. The information recording medium of the present invention is composed of a substrate 13 and a recording film 14 laminated on the substrate 13.
基板13は、情報の記録及び再生のために情報記録媒体
18上に照射されるレーザ光に対して、透明な材質のも
のが用いられる。例えば、近赤外近傍の発振波長を有す
るレーザ光を用いる場合は、ポリカーボネイト(PC)
、ポリメチルメタクリレート(PMMA) 、ガラス、
ポリオレフィン並びにエポキシ樹脂等が用いられる。The substrate 13 is made of a material that is transparent to the laser beam irradiated onto the information recording medium 18 for recording and reproducing information. For example, when using a laser beam with an oscillation wavelength near infrared, polycarbonate (PC)
, polymethyl methacrylate (PMMA), glass,
Polyolefins, epoxy resins, etc. are used.
また、記録膜14は、Au−Te合金に炭素並びに水素
を含ませているものである。The recording film 14 is made of an Au-Te alloy containing carbon and hydrogen.
この記録膜に含まれている(Au 、 Te 100−
m )Sea合金におけるAuの組成の範囲は、ヒート
モード記録方式において、Teよりも低い融点でビット
が形成されるように2≦x≦47原子%とする。このA
uを添加することにより、ピットの大きさが揃いかつピ
ットの外側に形成されるリムの部分が少なくなり、記録
密度を高めることができる等の効果を得ることができる
。また、Seの組成の範囲は、5≦2≦20原子%の範
囲とする。これは、例えばSeの組成の範囲が5原子%
未満の場合は、耐酸化性向上の効果を十分に得ることが
できず、また、20原子%を越えると光学的な吸収率が
減少するためである。This recording film contains (Au, Te 100-
m) The composition range of Au in the Sea alloy is 2≦x≦47 atomic % so that bits are formed with a melting point lower than that of Te in the heat mode recording method. This A
By adding u, the pits are uniform in size and the rim portion formed on the outside of the pits is reduced, so that effects such as increased recording density can be obtained. Further, the composition range of Se is 5≦2≦20 atomic %. This means that, for example, the composition range of Se is 5 atomic%.
If it is less than 20 at %, the effect of improving oxidation resistance cannot be sufficiently obtained, and if it exceeds 20 at %, the optical absorption rate will decrease.
さらに、記録膜14の膜厚は、仮に1000オングスト
ローム以上の場合には、書込み感度が低下してしまうた
めに好ましくなく、1000オングストローム以下であ
ることが必要であるが、好ましくは500オングストロ
ーム以下、さらに好ましくは100〜300オングスト
ロームの範囲がよい。これは第2図に示すように、パル
ス幅60 n5ecs線速5. 5m /seeの条件
下でpc基板12側からレーザを入射した場合の書込み
感度特性からも明らかである。また、100オングスト
ローム以下になると、記録膜14自身が不連続になって
ピンホールが形成される確率が増加するため好ましくな
い。このピンホールは、ヒートモード記録の場合は、情
報の読出し時に、ビットと間違って検出してしまう可能
性がある他、記録膜14の酸化のトリガーともなる。Furthermore, if the thickness of the recording film 14 is 1000 angstroms or more, it is not preferable because the writing sensitivity will decrease, and it is necessary to be 1000 angstroms or less, but preferably 500 angstroms or less, and more preferably 500 angstroms or less. The preferred range is 100 to 300 angstroms. As shown in FIG. 2, this means that the pulse width is 60 n5ecs and the linear velocity is 5. This is also clear from the writing sensitivity characteristics when the laser is incident from the PC board 12 side under the condition of 5 m 2 /see. Further, if the thickness is less than 100 angstroms, the recording film 14 itself becomes discontinuous and the probability of pinhole formation increases, which is not preferable. In the case of heat mode recording, this pinhole may not only be mistakenly detected as a bit when reading information, but also trigger oxidation of the recording film 14.
次に、第1図に示した情報記録媒体18における再生レ
ーザパワーの許容度(記録膜14に変質を起こすことな
く再生できるパワーレベル)について説明する。ピット
して記録された情報を読出すための再生レーザ光は、通
常、連続発振したレーザ光である。この状態において、
良好なS/N比を得て情報を再生するためには、再生レ
ーザパワーも大きくする必要がある。しかしながら、こ
の再生レーザパワーがある閾値を越えると、ピットを破
壊し、しかも、再生反射光のレベルが低下することがあ
る。そこで、線速5. 5m /seeで回転している
情報記録媒体18において、この情報記録媒体18に形
成されたトラックに連続的にホールドし、再生レーザ光
のレーザパワーを変化させて、反射光レベルの変化をシ
ンクロスコープで観察した。その観察結果を第3図に示
す。尚、この第3図に示す反射光のレベルは、再生直後
のものを1として規格化しであるものである。Next, the tolerance of the reproduction laser power (the power level at which reproduction can be performed without causing deterioration of the recording film 14) in the information recording medium 18 shown in FIG. 1 will be explained. The reproducing laser beam for reading information recorded as pits is usually a continuously oscillated laser beam. In this state,
In order to obtain a good S/N ratio and reproduce information, it is also necessary to increase the reproduction laser power. However, if this reproducing laser power exceeds a certain threshold, the pits may be destroyed and the level of the reproduced reflected light may decrease. Therefore, linear velocity 5. The information recording medium 18 rotating at 5 m/see is continuously held on the track formed on the information recording medium 18, the laser power of the reproduction laser beam is changed, and changes in the reflected light level are observed using a synchroscope. I observed it. The observation results are shown in Figure 3. Incidentally, the level of reflected light shown in FIG. 3 is normalized with the level immediately after reproduction as 1.
この観察結果によれば、との膜厚の記録膜においても、
0.6又は0.8mWのレーザパワーならば、3時間は
反射光のレベルが変化しなかった。According to this observation result, even for a recording film with a film thickness of
With a laser power of 0.6 or 0.8 mW, the level of reflected light did not change for 3 hours.
しかしながら、レーザパワーを1mWにすると、数時間
で反射光のレベルが低下した。そしてこの場合、膜厚の
薄い方が低下の程度が大きかった。However, when the laser power was set to 1 mW, the level of reflected light decreased within several hours. In this case, the smaller the film thickness, the greater the degree of decrease.
現在標準化が進みつつある追記型記録膜の再生許容パワ
ーは、回転数180Orpm1線速5.5a+/see
の場合には、最大で0.5mWと決められ、しかも、許
容最大再生レーザパワーP g+ax(mW)は、P
wax −0、2+ O’、 55 Vで与えられて
いる。ここでVは、情報記録媒体の線速度(m/5ee
)を示している。また、P waxで10サイクル連続
的に再生しても、反射光レベルに変化がないことが要求
されているが、回転数180 Orpm 、線速5.
51/seeの場合においては。The allowable reproduction power of the write-once recording film, which is currently being standardized, is a rotational speed of 180 Orpm and a linear speed of 5.5a+/see.
In the case of
wax -0, 2+ O', 55 V. Here, V is the linear velocity of the information recording medium (m/5ee
) is shown. Furthermore, it is required that there should be no change in the level of reflected light even after 10 consecutive cycles of reproduction with P wax, but the rotation speed is 180 Orpm and the linear velocity is 5.
In the case of 51/see.
少なくとも1時間は変化してはならないということであ
る。従って、該条件下で0.8mWのパワーでも3時間
まで変化が起こらない本発明の記録膜14は、十分にこ
れらの要求を満たすことになる。This means that it should not change for at least one hour. Therefore, under these conditions, the recording film 14 of the present invention, which does not change for up to 3 hours even with a power of 0.8 mW, satisfies these requirements.
実施例1
まず、第1図に示した情報記録媒体18を形成する方法
について説明する。Example 1 First, a method for forming the information recording medium 18 shown in FIG. 1 will be described.
第4図は、本発明の情報記録媒体18を形成するスパッ
タ装置の概略図である。まず、このスパッタ装置のバル
ブ2をロータリーポンプ3側に開き、チェンバ1内を0
.2Torrまで排気した。FIG. 4 is a schematic diagram of a sputtering apparatus for forming the information recording medium 18 of the present invention. First, open the valve 2 of this sputtering device to the rotary pump 3 side, and make the inside of the chamber 1 zero.
.. It was evacuated to 2 Torr.
次いで、バルブ2をクライオポンプ5側に開いてI X
10−’Torr以下まで排気した。この時、排気量
は制御する必要がないので、コンダクタンスバルブ4は
全開しておいた。Next, open valve 2 to the cryopump 5 side and
It was evacuated to below 10-'Torr. At this time, since there was no need to control the displacement, the conductance valve 4 was left fully open.
次に、バルブ6を開けて、Arガスライン7からArガ
スをマスフローコントローラ(図示せず)で調節しなが
ら、チェンバ1内にIOSCCM導入した。次いで、チ
ェンバ1内の圧力をイオンゲージ(図示せず)でモニタ
ーしながら、コンダクタンスバルブ4で5 X 10−
’Torrに調整した。Next, the valve 6 was opened, and IOSCCM was introduced into the chamber 1 while adjusting Ar gas from the Ar gas line 7 using a mass flow controller (not shown). Next, while monitoring the pressure inside the chamber 1 with an ion gauge (not shown), the conductance valve 4
'Adjusted to Torr.
この圧力が変動しないことを確認してから、Au−Te
合金ターゲット9(直径5インチ二組成はA u +2
T e ss ;原子%)に、DCパワーサプライ10
から100Wを印加し、シャッタ11を閉じたままスパ
ッタ放電を5分間行なってスパッタクリーニングをした
。After confirming that this pressure does not fluctuate,
Alloy target 9 (diameter 5 inches, two compositions A u +2
T ess ; atomic%), DC power supply 10
A power of 100 W was applied from 100 W to 100 W, and sputter discharge was performed for 5 minutes with the shutter 11 closed to perform sputter cleaning.
Arガスの供給とDCパワーの供給を停止した後、タラ
イボンプ5を用いてチェンバ1内を一旦I X 10
””Torr以下に排気した。その後バルブ6.17及
び25を開けてチェンバ1内にArガスとCH4ガスと
Se (CH3)2ガスをA「ガスライン7とCH4ガ
スライン8と5e(CHi)2ガスライン26を通して
、マスフローコントローラ(図示せず)で調節しながら
、各々10,10及び5SCCM導入した。次いで、コ
ンダクタンスバルブ4を用いて、チェンバ1内の圧力を
5XIO−T orrに制御した。その後、圧力変動が
ないことを確認した後、Au Teターゲット9にDC
パワーサプライ10から100Wを印加し、スパッタ放
電させた。安定に放電していることを確認した後、シャ
ッタ11を開けて、予め回転子12にセットしておいた
ポリカーボネー) (PC)基板13上に、Au Te
合金並びに炭素及び水素を含んだ記録膜14を積層した
。回転子12は60 rpIllで回転させた。記録膜
14の膜厚が、250オングストロームとなったところ
で、シャッタを閉じ、パワーの供給を停止した。次いで
、コンダクタンスバルプ4を全開し、クライオポンプ5
を用いてチェンバ1内をI X 10−’Torr以下
まで排気した。その後、バルブ15を開けて、N2ガス
ライン16からN2ガスをチェンバ1内に導入して大気
圧に戻した後、情報記録媒体18を取出した。After stopping the supply of Ar gas and the supply of DC power, the inside of the chamber 1 is temporarily heated to I
The exhaust was evacuated to below Torr. After that, open the valves 6.17 and 25, and introduce Ar gas, CH4 gas, and Se (CH3)2 gas into the chamber 1 through the A gas line 7, the CH4 gas line 8, and the 5e (CHi)2 gas line 26, through the mass flow controller. (not shown), 10, 10 and 5 SCCM were introduced respectively. Next, the pressure inside the chamber 1 was controlled to 5XIO-Torr using the conductance valve 4. Thereafter, it was confirmed that there was no pressure fluctuation. After checking, add DC to Au Te target 9.
A power of 100 W was applied from the power supply 10 to cause sputter discharge. After confirming that the discharge is stable, open the shutter 11 and place the Au Te
A recording film 14 containing an alloy, carbon, and hydrogen was laminated. Rotor 12 was rotated at 60 rpIll. When the thickness of the recording film 14 reached 250 angstroms, the shutter was closed and power supply was stopped. Next, the conductance valve 4 is fully opened, and the cryopump 5 is opened.
The inside of the chamber 1 was evacuated to below I.times.10-' Torr. Thereafter, the valve 15 was opened and N2 gas was introduced into the chamber 1 from the N2 gas line 16 to return the pressure to atmospheric pressure, and then the information recording medium 18 was taken out.
このようにして形成された情報記録媒体18の記録膜1
4は、X線回折分析の結果、特定の回折角度からの回折
ピークが認められないアモルファス膜であることが確認
された。このアモルファス膜は、多結晶膜と異なり結晶
粒界が存在しないため、再生レーザ光が粒界部分で変調
されて粒界ノイズを生ずることがない。Recording film 1 of information recording medium 18 formed in this way
As a result of X-ray diffraction analysis, Sample No. 4 was confirmed to be an amorphous film in which no diffraction peak was observed from a specific diffraction angle. Unlike a polycrystalline film, this amorphous film does not have grain boundaries, so that the reproduced laser light is not modulated at the grain boundaries and does not generate grain boundary noise.
記録膜14にAu Te Se三元合金と炭素(C)及
び水素(H)を含ませるためには、Au Te Se合
金ターゲットを炭化水素ガス中でスパッタしたり、Au
Te合金ターゲットをアルキルセレンガス中でスパッ
タするのではなく、Au Te合金ターゲットを炭化水
素ガスとアルキルセレンガスとを含む雰囲気中でスパッ
タする。このスパッタ方法によれば、記録膜中のセレン
、(Se )の量をこのセレンを含むガスの流量を調節
することにより容易に制御でき、しかも記録膜14中の
炭素及び水素の量もアルキルセレンガスの分解だけに依
存せずに、炭化水素ガス流量の調節で容易に制御できる
ものである。また、金(Au ) 、テルル(Te )
及びセレン(Se )の三成分からなるターゲットを用
いなくてもよいし、ターゲットの連続的なスパッタに伴
う記録膜の組成ズレも防止できる。In order to include the Au Te Se ternary alloy, carbon (C), and hydrogen (H) in the recording film 14, an Au Te Se alloy target is sputtered in a hydrocarbon gas, or an Au Te Se alloy target is sputtered in a hydrocarbon gas.
Rather than sputtering a Te alloy target in an alkyl selenium gas, an Au 2 Te alloy target is sputtered in an atmosphere containing a hydrocarbon gas and an alkyl selenium gas. According to this sputtering method, the amount of selenium (Se 2 ) in the recording film can be easily controlled by adjusting the flow rate of the selenium-containing gas, and the amount of carbon and hydrogen in the recording film 14 can also be controlled by controlling the amount of selenium (Se 2 ) in the recording film 14. This can be easily controlled by adjusting the hydrocarbon gas flow rate without relying solely on gas decomposition. Also, gold (Au), tellurium (Te)
It is not necessary to use a target consisting of the three components of selenium (Se) and selenium (Se), and it is also possible to prevent compositional deviation of the recording film due to continuous sputtering of the target.
実施flj 2
実施例1に示した方法により製造された情報記録媒体1
8において、耐酸化性の指標となる酸化による表面のざ
らつきの結果生じる読出しエラーの比率(エラーレート
)を分析した。75℃−90%の加速条件下で、実施例
1に示したのと同じ膜厚のTe膜及びTe−C膜、並び
に本発明の記録膜14を含有する情報記録媒体18を一
定時間放置した後、情報の書込みを行ないエラーレート
を測定した。その結果を第5図に示す。この図に示すエ
ラーレートは、加速条件下に置く前の値を1として規格
化した。この測定結果によれば、Te膜はわずか数日で
エラーレートが増加した。Implementation flj 2 Information recording medium 1 manufactured by the method shown in Example 1
8, the ratio of read errors (error rate) resulting from surface roughness due to oxidation, which is an index of oxidation resistance, was analyzed. The information recording medium 18 containing the Te film and Te-C film having the same film thickness as shown in Example 1 and the recording film 14 of the present invention was left for a certain period of time under accelerated conditions of 75° C. and 90%. After that, information was written and the error rate was measured. The results are shown in FIG. The error rate shown in this figure was normalized by setting the value before the acceleration condition to 1. According to the measurement results, the error rate of the Te film increased in just a few days.
Te−C膜においても、100時間以後は徐々に増加し
た。一方、本発明の記録膜14においては、1000時
間放置してもほとんど変化をしなかった。従って、本発
明の記録膜14においては、高温高湿下でも耐酸化性が
良好で、長寿命であることが分る。尚、この記録膜14
は、この測定後にX線回折分析をした時もアモルファス
膜であった。In the Te-C film as well, it gradually increased after 100 hours. On the other hand, the recording film 14 of the present invention showed almost no change even after being left for 1000 hours. Therefore, it can be seen that the recording film 14 of the present invention has good oxidation resistance even under high temperature and high humidity, and has a long life. Note that this recording film 14
was an amorphous film when X-ray diffraction analysis was performed after this measurement.
次に、パルス幅50 n5ecs書込み周波数37MH
2,波長830niのGaAs系半導体レーザを用い、
対物レンズの開口数(NA)0.52、線速5゜5i/
seeの条件下で、Te −C膜とAuTe 5e−C
膜に書込んだ場合のC/N(Carrler/ N o
ise)の大きさを分析した。この検出結果を第6図に
示す。第6図に示す分析結果によれば、本発明の記録膜
14は、従来のTe −C膜と比較して、さらに高感度
になっていることが分る。Next, pulse width 50n5ecs write frequency 37MH
2. Using a GaAs semiconductor laser with a wavelength of 830 ni,
Objective lens numerical aperture (NA) 0.52, linear velocity 5°5i/
Under the conditions of see, Te-C film and AuTe 5e-C
C/N (Carrler/N o
The size of the ise) was analyzed. The detection results are shown in FIG. According to the analysis results shown in FIG. 6, it can be seen that the recording film 14 of the present invention has higher sensitivity than the conventional Te--C film.
尚、上記に記載した実施例においては、情報記録媒体1
8の製造方法として、炭化水素ガス(メタン)とアルキ
ルセレンガス(Se (CHi ) 2 )と希ガス
(アルゴン)の混合雰囲気下でAu Teターゲットを
スパッタ放電した場合について説明したが、必ずしもこ
れに限定されるものではなく、例えば、希ガスを含まな
い雰囲気下で放電させてもよい。In addition, in the embodiment described above, the information recording medium 1
As a manufacturing method of No. 8, we have explained the case where the AuTe target is sputter-discharged in a mixed atmosphere of hydrocarbon gas (methane), alkyl selenium gas (Se (CHi) 2), and rare gas (argon), but this is not necessarily the case. For example, the discharge may be performed in an atmosphere that does not contain a rare gas.
さらに、本発明の情報記録媒体においては、基板13と
して、透明な有機樹脂基板を用いたもので説明したが、
情報の書込み及び再生レーザ光を、基板13側からでは
なく、記録膜14面側から入射させる場合には、この基
板13は、不透明の材質のもので形成させてもよい。Furthermore, in the information recording medium of the present invention, a transparent organic resin substrate was used as the substrate 13 in the explanation;
When the information writing and reproducing laser beam is made incident not from the substrate 13 side but from the recording film 14 side, the substrate 13 may be formed of an opaque material.
[発明の効果]
以上説明したように本発明においては、高温高湿の環境
下においても、耐酸化性に優れ、長寿命及び高感度であ
る記録膜を有する情報記録媒体を提供できる。[Effects of the Invention] As described above, the present invention can provide an information recording medium having a recording film that has excellent oxidation resistance, long life, and high sensitivity even in a high temperature and high humidity environment.
第1図は本発明の一実施例である情報記録媒体の断面図
、第2図は記録膜の膜厚と書込み感度の関係を示す図、
第3図は再生時間と反射レベルの変化を示す図、第4図
は第1図に示す情報記録媒体を形成する光記録膜形成装
置の構成を示す図、第5図は加速条件を経た記録膜のエ
ラーレートを示す図、第6図は記録膜の記録感度を示す
図である。
13 ・・・ 基板、 14 ・・・ 記録膜18 ・
・・ 情報記録媒体FIG. 1 is a cross-sectional view of an information recording medium that is an embodiment of the present invention, and FIG. 2 is a diagram showing the relationship between recording film thickness and writing sensitivity.
Fig. 3 is a diagram showing changes in playback time and reflection level, Fig. 4 is a diagram showing the configuration of an optical recording film forming apparatus for forming the information recording medium shown in Fig. 1, and Fig. 5 is a diagram showing recording after undergoing acceleration conditions. FIG. 6 is a diagram showing the error rate of the film, and FIG. 6 is a diagram showing the recording sensitivity of the recording film. 13...Substrate, 14...Recording film 18・
・・・ Information recording medium
Claims (1)
録される、(Au_xTe_1_0_0_−_x)_y
Se_z(2≦x≦47原子%、80≦y≦95原子%
、5≦z≦20原子%)合金並びに炭素及び水素を含む
記録膜と、 を具備したことを特徴とする情報記録媒体。(1) A substrate, (Au_xTe_1_0_0_-_x)_y formed on this substrate and on which information is recorded by irradiation with laser light.
Se_z (2≦x≦47 atomic%, 80≦y≦95 atomic%
, 5≦z≦20 atomic %) alloy, and a recording film containing carbon and hydrogen.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63322046A JPH02167780A (en) | 1988-12-22 | 1988-12-22 | Information recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63322046A JPH02167780A (en) | 1988-12-22 | 1988-12-22 | Information recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02167780A true JPH02167780A (en) | 1990-06-28 |
Family
ID=18139317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63322046A Pending JPH02167780A (en) | 1988-12-22 | 1988-12-22 | Information recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02167780A (en) |
-
1988
- 1988-12-22 JP JP63322046A patent/JPH02167780A/en active Pending
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