JPH02147385A - Information recording medium - Google Patents

Information recording medium

Info

Publication number
JPH02147385A
JPH02147385A JP63300678A JP30067888A JPH02147385A JP H02147385 A JPH02147385 A JP H02147385A JP 63300678 A JP63300678 A JP 63300678A JP 30067888 A JP30067888 A JP 30067888A JP H02147385 A JPH02147385 A JP H02147385A
Authority
JP
Japan
Prior art keywords
recording film
information
film
recording
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63300678A
Other languages
Japanese (ja)
Inventor
Hideki Okawa
秀樹 大川
Norio Ozawa
小沢 則雄
Motonari Matsubara
松原 基成
Hiroyuki Tono
宏行 東野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP63300678A priority Critical patent/JPH02147385A/en
Publication of JPH02147385A publication Critical patent/JPH02147385A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24308Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24316Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318Non-metallic elements
    • G11B2007/24328Carbon
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B7/2437Non-metallic elements

Abstract

PURPOSE:To maintain a recorded information stably even under hot and humid conditions by providing a recording film comprising a Cu-Te alloy, carbon and hydrogen for recording information by irradiation with a laser light, on a substrate. CONSTITUTION:An information recording medium 18 comprises a substrate 13 and a recording film 14 provided thereon. The recording film 14, for recording information therein by irradiation with a laser light, comprises a Cu-Te alloy with a Cu content of 2-40atom%, carbon and hydrogen. With this construction, an information recording medium 18 can be provided which shows excellent oxidation resistance even in hot and humid environments and has a long useful life and high sensitivity.

Description

【発明の詳細な説明】 [発明の目的コ (産業上の利用分野) 本発明は、例えばレーザ光の照射により情報の記録及び
再生が行われる情報記録媒体に関する。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention (Industrial Application Field) The present invention relates to an information recording medium on which information is recorded and reproduced by, for example, irradiation with laser light.

(従来の技術) レーザ光の照射により情報が記録され、さらに、記録さ
れた情報の再生がなされる情報記録媒体の一種として、
Teを主成分とする記録膜を具備したものが開発されて
いる。さらに、このTeを主成分とする記録膜に炭素並
びに水素を含んだ記録膜が開発され、実用化に至ってい
る(特開昭58−9234号公報参照)。
(Prior Art) As a type of information recording medium, information is recorded by irradiation with laser light and the recorded information is reproduced.
A device equipped with a recording film containing Te as a main component has been developed. Furthermore, a recording film containing carbon and hydrogen in addition to the Te-based recording film has been developed and put into practical use (see Japanese Patent Laid-Open No. 58-9234).

この記録膜を作成する際には、Teを炭化水素ガスを含
む雰囲気中でスパッタするとTe単体の膜(Te膜)よ
りも高感度でかつ耐酸化性能に優れた記録膜(以下Te
−C膜と称す)が得られる。
When creating this recording film, if Te is sputtered in an atmosphere containing hydrocarbon gas, the recording film (hereinafter referred to as Te
-C film) is obtained.

この記録膜は、アモルファス膜であり、Te、C及びH
を含み、また少なくともCとHは化学結合をしているこ
とが分っている。
This recording film is an amorphous film made of Te, C and H.
It is known that at least C and H form a chemical bond.

この記録膜は、Te膜に倣ってTeと炭化水素をソース
とする蒸着(プラズマを用いない)で形成しようとして
も形成することができず、プラズマを利用して初めて得
られる。これは、炭化水素ガスがプラズマ中で一旦分解
した後、CとHが化半反応をして成膜されるためであり
、これが光記録膜形成時の大きな特徴となっている。
This recording film cannot be formed even if it is attempted to be formed by vapor deposition using Te and hydrocarbon as sources (without using plasma) in the same way as the Te film, and can only be obtained by using plasma. This is because, after the hydrocarbon gas is once decomposed in the plasma, C and H undergo a half-chemical reaction to form a film, and this is a major feature when forming an optical recording film.

(発明が解決しようとする課題) 上記のようなTe及び炭化水素からなる記録膜とTeで
形成された記録膜とを65℃−90%の高温高湿中(加
速条件下)において比較するとTe膜はわずか1週間以
内に酸化して光記録性能が損われるのに対し、Te−C
膜は1ケ月を経過しても膜の内部までは酸化されず安定
であった。
(Problems to be Solved by the Invention) When a recording film made of Te and hydrocarbons as described above is compared with a recording film made of Te at a high temperature and high humidity of 65° C. and 90% (accelerated conditions), Te The film oxidizes within just one week and optical recording performance is impaired, whereas Te-C
The membrane remained stable without being oxidized even after one month.

しかし、Te−C膜も高温下(約75℃以上)では記録
膜が結晶化してしまうために、表面がざらつくため、ノ
イズが増大し、再生信号に与える影響が大きくなるとい
う問題点があった。
However, the recording film of the Te-C film also crystallizes at high temperatures (above about 75 degrees Celsius), resulting in a rough surface that increases noise and has a greater effect on the reproduced signal. .

本発明は、上記問題点を解決するために、高温高湿の環
境下においても長寿命の情報記録媒体を提供することを
目的とする。
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, it is an object of the present invention to provide an information recording medium that has a long life even in a high temperature and high humidity environment.

[発明の構成] (課題を解決するための手段) 本発明は上記目的を達成するために、基板と、この基板
上に形成され、レーザ光の照射により情報が記録される
、Cu−Te合金並びに炭素及び水素を含む記録膜とを
具備した情報記録媒体を提供するものである。
[Structure of the Invention] (Means for Solving the Problem) In order to achieve the above object, the present invention provides a substrate, a Cu-Te alloy formed on the substrate, and on which information is recorded by irradiation with a laser beam. and a recording film containing carbon and hydrogen.

また、第2の発明においては、基板と、この基板上に形
成され、レーザ光の照射により情報が記録される、Cu
の含有量が2原子%乃至40原子%の範囲内である′S
A’u−Te合金並びに炭素及び水素を含む記録膜とを
具備した情報記録媒体を提供するものである。
Further, in the second invention, there is provided a substrate, a Cu film formed on the substrate, and on which information is recorded by irradiation with laser light.
The content of 'S is within the range of 2 at% to 40 at%
The present invention provides an information recording medium comprising an A'u-Te alloy and a recording film containing carbon and hydrogen.

合金並びに炭素及び水素を含む記録膜を具備することに
より、高温高湿下の状態においても、記録した情報を安
定に維持することができる。また、X−に−1uの含有
量が2原子%乃至40原子%の範囲内にすることにより
、高感度な記録膜を得ることができる。
By providing a recording film containing an alloy and carbon and hydrogen, recorded information can be stably maintained even under high temperature and high humidity conditions. Further, by controlling the content of -1u to X- within the range of 2 at % to 40 at %, a highly sensitive recording film can be obtained.

(実施例) 以下、本発明の一実施例を図面を参照して説明する。(Example) Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第1図は、本発明の情報記録媒体18の構造を概略的に
示した断面図である。本発明の情報記録媒体18は、基
板13及びこの基板13上に積層された記録膜14によ
り構成されるものである。
FIG. 1 is a cross-sectional view schematically showing the structure of an information recording medium 18 of the present invention. The information recording medium 18 of the present invention is composed of a substrate 13 and a recording film 14 laminated on the substrate 13.

基板13は、情報の記録及び再生のために情報記録媒体
上に照射されるレーザ光の波長に対して透明な材質のも
のが用いられる。例えば、近赤外近傍の発振波長を有す
るレーザ光を用いる場合はポリカーボネート(PC)、
ポリメチルメタクリレート(PMMA) 、ガラス、ポ
リオレフィン並びにエポキシ樹脂等が用いられる。
The substrate 13 is made of a material that is transparent to the wavelength of laser light that is irradiated onto the information recording medium for recording and reproducing information. For example, when using a laser beam with an oscillation wavelength near infrared, polycarbonate (PC),
Polymethyl methacrylate (PMMA), glass, polyolefin, epoxy resin, etc. are used.

また、記録膜14は、Cu−Te合金に炭素並びに水素
を含ませているものである。
The recording film 14 is made of a Cu-Te alloy containing carbon and hydrogen.

この記録膜14におけるCu−Te合金の組成比につい
て説明する。
The composition ratio of the Cu-Te alloy in this recording film 14 will be explained.

既に知られているCu−Te二元系の状態図によれば、
金属間化合物として、Cu 2 Te 、 Cu4Te
3及びCu Teが存在することがわかっている。しか
しながら、これらの化合物は、融点が各々1125℃、
800℃及び600℃であり、Te担体の融点(450
℃)よりも遥かに高い。
According to the already known phase diagram of the Cu-Te binary system,
As intermetallic compounds, Cu 2 Te, Cu 4 Te
3 and CuTe are known to exist. However, these compounds have melting points of 1125°C and 1125°C, respectively.
800°C and 600°C, and the melting point of the Te carrier (450°C
℃) is much higher.

そのため、記録膜を融解してピットを形成するヒートモ
ード記録方式においてはあまり実用的でない。
Therefore, a heat mode recording method in which pits are formed by melting the recording film is not very practical.

しかし、共晶点を示すCu27T e 73の融点は、
約330℃となり、Teよりも低い温度で融解する。従
って、Cuの含有割合は2〜40原子%がよい。この組
成比ならToより融点が低いため、Te膜より高感度で
記録できる。
However, the melting point of Cu27T e 73, which shows the eutectic point, is
The temperature is approximately 330°C, which is lower than that of Te. Therefore, the content ratio of Cu is preferably 2 to 40 atomic %. With this composition ratio, since the melting point is lower than that of To, recording can be performed with higher sensitivity than a Te film.

また、記録膜14の厚さは、1000オングストローム
以上あると書込み感度が低下するために好ましくない。
Further, if the thickness of the recording film 14 is 1000 angstroms or more, it is not preferable because the writing sensitivity decreases.

従って、1000オングストローム以下としなければな
らないが、好ましくは500オングストローム以下、さ
らに好ましくは100〜300オングストロームがよい
。これは、第2図に示すように、パルス幅60 n5e
es線速度5゜5m/seeの条件下で、基板13越し
にレーザを入射した場合の書込み感度特性からも明らか
である。膜厚350オングストロ一ム以上であると、書
込みレーザパワーが低いと、再生信号の変調度があまり
得られず、優れた書込み感度特性が得にくい。また、1
00オングストローム以下になると、記録膜が不連続に
なってピンホールが形成される確率が増加するため好ま
しくない。このピンホールはヒートモード記録の場合は
、読出し時に本来のピットと間違う恐れがある他、記録
膜酸化のトリガーともなるので、できるだけ少なくしな
ければならない。
Therefore, the thickness must be 1000 angstroms or less, preferably 500 angstroms or less, and more preferably 100 to 300 angstroms. This has a pulse width of 60 n5e, as shown in Figure 2.
This is also clear from the writing sensitivity characteristics when the laser is incident through the substrate 13 under the condition of an es linear velocity of 5.5 m/see. If the film thickness is 350 angstroms or more and the writing laser power is low, the degree of modulation of the reproduced signal will not be obtained much, making it difficult to obtain excellent writing sensitivity characteristics. Also, 1
If the thickness is less than 0.00 angstroms, the recording film becomes discontinuous and the probability of pinhole formation increases, which is not preferable. In the case of heat mode recording, these pinholes may be mistaken for original pits during readout, and may also trigger oxidation of the recording film, so they must be minimized as much as possible.

次に、第1図に示した情報記録媒体18における再生レ
ーザパワーの許容度(記録膜に変質をおこすことなく再
生できるパワーレベル)について説明する。ピットに記
録した情報を読出す再生レーザ光は、通常連続発振させ
るものである。この状態において良好なS/N比で情報
を読出すためには、再生レーザパワーも大きくする必要
がある。
Next, the tolerance of the reproduction laser power (the power level at which reproduction can be performed without causing deterioration of the recording film) of the information recording medium 18 shown in FIG. 1 will be explained. The reproducing laser light used to read out information recorded in the pits is normally continuously oscillated. In order to read out information with a good S/N ratio in this state, it is also necessary to increase the reproduction laser power.

しかしながら、ある閾値を越えるとピット(情報)を破
壊し、再生反射光のレベルが低下することがある。その
ため、線速5.5s /seeのトラックに連続的にホ
ールドし、再生レーザパワーを変化させて反射光レベル
の変化をシンクロスコープで観察した。その観察結果を
第3図に示す。
However, if a certain threshold is exceeded, pits (information) may be destroyed and the level of reproduced reflected light may decrease. Therefore, the track was continuously held at a linear velocity of 5.5 s/see, the reproduction laser power was changed, and changes in the reflected light level were observed using a synchroscope. The observation results are shown in Figure 3.

この結果によれば、どの膜厚の記録膜においても、0.
6又は0.8厘Wのレーザパワーならば、3時間は反射
光のレベルが変化しなかった。しかしながら、パワーを
11vLにすると数時間で反射のレベルが低下した。そ
してこの場合、膜厚が薄いもの程、反射レベルの低下の
程度が大きかった。
According to this result, no matter the thickness of the recording film, 0.
With a laser power of 6 or 0.8 W, the level of reflected light did not change for 3 hours. However, when the power was increased to 11 vL, the level of reflection decreased within a few hours. In this case, the thinner the film, the greater the reduction in the reflection level.

この反射光のレベルは、再生直後のものを1として規格
化しである。
The level of this reflected light is normalized with the level immediately after reproduction as 1.

現在標準化が進みつつある追記型記録膜の再生許容パワ
ーは、回転数1800 rpmで線速5.5m1sec
の場合には、最大で0.5mWと決められている。許容
最大再生レーザパワーP+++ax  (■W)は、P
max fio、2+〇、055Vで与えられる。ここ
でVは記録媒体の線速度(s /see )である。ま
た、P waxで10 サイクル連続的に再生しても反
射光レベルに変化がないことが要求されている。これは
回転数180Orpm、線速度5.5層/seeの場合
は、少なくとも1時間変化してはならないということで
ある。従って、本発明の記録膜14は、該条件下で0.
811IWのパワーでも3時間まで変化が起こらないた
めに、十分にその要求を満たすことになる。
The allowable playback power of the write-once recording film, which is currently being standardized, is a linear velocity of 5.5 m1sec at a rotational speed of 1800 rpm.
In this case, the maximum power is determined to be 0.5 mW. The maximum allowable reproduction laser power P++++ax (■W) is P
max fio, 2+〇, given by 055V. Here, V is the linear velocity (s/see) of the recording medium. Further, it is required that the level of reflected light does not change even after 10 cycles of continuous reproduction using P wax. This means that when the rotational speed is 180 rpm and the linear velocity is 5.5 layers/see, there should be no change for at least 1 hour. Therefore, the recording film 14 of the present invention has a 0.0.
Even with the power of 811IW, no change occurs for up to 3 hours, so this requirement is fully met.

実施例1 第1図に示した情報記録媒体18を形成する方法につい
て説明する。
Example 1 A method for forming the information recording medium 18 shown in FIG. 1 will be described.

第2図は、情報記録媒体18を形成するスパッタ装置の
概略図である。まず、このスパッタ装置のバルブ2をロ
ータリーポンプ3側に開いてチェンバ1内を0.2To
rrまで排気した。次いでバルブ2をクライオポンプ5
側に開いてlX10−’T Orr以下まで排気した。
FIG. 2 is a schematic diagram of a sputtering apparatus for forming the information recording medium 18. First, open the valve 2 of this sputtering device to the rotary pump 3 side and adjust the inside of the chamber 1 to 0.2To.
Exhausted to rr. Then valve 2 is connected to cryopump 5.
It was opened to the side and evacuated to below 1X10-'T Orr.

この時、排気量は制御する必要がないので、コンダクタ
ンスバルブ4は全開しておいた。
At this time, since there was no need to control the displacement, the conductance valve 4 was left fully open.

次にバルブ6を開けて、Arガスライン7からArガス
をマスフローコントローラ(図示せず)で調節しながら
、チェンバ1内にIO9CCM導入した。次いでチェン
バ1内の圧力をイオンゲージ(図示せず)でモニターし
ながら、コンダクタンスバルブ4で5 X 10−’T
orrに調整した。この圧力が変動しないことを確認し
てから、Cu −Te合金ターゲット9(直径5インチ
:組成はAu 27Te B;原子%)にDCパワーサ
プライ10から100Wを印加し、シャッタ11を閉じ
たままスパッタ放電を5分間行なってスパッタクリーニ
ングをした。
Next, the valve 6 was opened, and IO9CCM was introduced into the chamber 1 while adjusting Ar gas from the Ar gas line 7 using a mass flow controller (not shown). Next, while monitoring the pressure inside the chamber 1 with an ion gauge (not shown), the conductance valve 4
Adjusted to orr. After confirming that this pressure does not fluctuate, 100 W is applied from the DC power supply 10 to the Cu-Te alloy target 9 (diameter 5 inches; composition is Au 27 Te B; atomic %), and sputtering is performed with the shutter 11 closed. Spatter cleaning was performed by performing discharge for 5 minutes.

Arガスの供給とDCパワーの供給を停止した後、クラ
イオポンプ5を用いてチェンバ1内を−HI X 10
 ””Torr以下に排気した。その後、バルブ6と1
7を開けてチェンバ1内にArガスとCHaガスを、A
rガスライン7とCH4ガスライン8を通してマスフロ
ーコントローラ(図示せず)で調節しながら、IO8C
CMづつ導入した次いでコンダクタンスバルブ4を用い
てチェンバ1内の圧力を5 X 10−’Torrに制
御した。圧力変動がないことを確認した後、Cu Te
ターゲット9にDCパワーサプライ10から100Wを
印加してスパッタ放電させた。安定に放電していること
を確かめた後、シャッタ11を開けて、予め回転子12
にセットしておいたポリカーボネート(P C)基板1
3上にCu Te合金並びに炭素及び水素を含んだ記録
膜14を積層した。回転子は60rp−で回転させた。
After stopping the supply of Ar gas and the supply of DC power, the inside of the chamber 1 is -HI
The exhaust was evacuated to below Torr. Then valves 6 and 1
7 and put Ar gas and CHa gas into chamber 1.
IO8C through r gas line 7 and CH4 gas line 8 while adjusting with a mass flow controller (not shown).
After introducing CM one by one, the pressure inside the chamber 1 was controlled to 5×10-'Torr using the conductance valve 4. After confirming that there is no pressure fluctuation, CuTe
100 W was applied to the target 9 from the DC power supply 10 to cause sputter discharge. After confirming that the discharge is stable, open the shutter 11 and close the rotor 12 in advance.
Polycarbonate (PC) board 1 set in
A recording film 14 containing a CuTe alloy and carbon and hydrogen was laminated on top of the recording film 14. The rotor was rotated at 60 rpm.

膜厚が250オングストロームになったところで、シャ
ッタを閉じ、パワーの供給を停止した。
When the film thickness reached 250 angstroms, the shutter was closed and power supply was stopped.

次いでコンダクタンスバルブ4を全開し、クライオポン
プ5を用いてチェンバ1内をlX10−’T orr以
下まで排気した。次いでバルブ15を開けて、N2ガス
ライン16からN2ガスをチェンバ1内に導入して大気
圧に戻した後、情報記録媒体18を取出した。
Next, the conductance valve 4 was fully opened, and the inside of the chamber 1 was evacuated to 1×10 −' Torr or less using the cryopump 5. Next, the valve 15 was opened and N2 gas was introduced into the chamber 1 from the N2 gas line 16 to return the pressure to atmospheric pressure, and then the information recording medium 18 was taken out.

このようにして形成された情報記録媒体18においては
、X線回折分析の結果、特定の回折角度からの回折ピー
クが認められない非晶質膜であることが確認された。非
晶質膜では、多結晶と違って結晶粒界がないため、再生
レーザ光が粒界部分で変調されて粒界ノイズを生ずるこ
とがない。
As a result of X-ray diffraction analysis, it was confirmed that the information recording medium 18 thus formed was an amorphous film in which no diffraction peak was observed from a specific diffraction angle. Unlike polycrystalline films, amorphous films do not have grain boundaries, so the reproduction laser light is not modulated at the grain boundaries and does not produce grain boundary noise.

実施例2 実施例1に示した方法により製造された情報記録媒体1
8において、耐酸化性の指標となる、酸化による表面の
ザラツキの結果起こる読出しエラーの比率(エラーレー
ト)を分析した。75℃−90%の加速条件下に、実施
例1に示したものと同じ膜厚のTe膜及びTe−C膜、
並びに本発明の記録膜14を各々具備、シた情報記録媒
体を一定時間放置した後、書込みを行ないエラーレート
を測定した。その測定結果を第5図に示す。エラーレー
トは、加速条件下に置く前の値を1として規格化した。
Example 2 Information recording medium 1 manufactured by the method shown in Example 1
In No. 8, the ratio of read errors (error rate) occurring as a result of surface roughness due to oxidation, which is an index of oxidation resistance, was analyzed. A Te film and a Te-C film having the same thickness as that shown in Example 1 under accelerated conditions of 75° C.-90%,
Further, after each information recording medium provided with the recording film 14 of the present invention was left for a certain period of time, writing was performed and the error rate was measured. The measurement results are shown in FIG. The error rate was normalized with the value before being placed under acceleration conditions as 1.

この測定結果によれば、Te膜はわずか数日でエラーレ
ートが増加している。一方、本発明の記録膜においては
、1000時間放置してもほとんど変化がなかった。従
って、Cu Te合金並びに炭素及び水素を具備した記
録膜では、高温高湿度下でも耐酸化性が良好で、しかも
長寿命であることが分る。尚、本発明の記録膜において
は、この測定後にX線回折分析をした時も非晶質膜であ
った。
According to the measurement results, the error rate of the Te film increases in just a few days. On the other hand, the recording film of the present invention showed almost no change even after being left for 1000 hours. Therefore, it can be seen that the recording film containing the CuTe alloy and carbon and hydrogen has good oxidation resistance even under high temperature and high humidity, and has a long life. The recording film of the present invention was found to be an amorphous film even when subjected to X-ray diffraction analysis after this measurement.

第6図は、パルス幅50 n5ec、書込み周波数37
 M Hz s波長830 rvのGa As系半導体
レーザを用い、対物レンズの開口数(NA)0.52、
線速度5. 5m /seeの条件下で、Te −C膜
と本発明の記録膜膜とに、情報を記録した場合のCZN
比(Carrier/ N oise)の大きさを示し
ている。この結果からも、本発明の記録膜においては、
従来の記録膜よりもさらに高感度になっていることが判
明した。
Figure 6 shows a pulse width of 50 n5ec and a writing frequency of 37
A GaAs semiconductor laser with a wavelength of 830 rv is used, and the numerical aperture (NA) of the objective lens is 0.52.
Linear velocity5. CZN when information is recorded on the Te-C film and the recording film of the present invention under the condition of 5 m/see.
It shows the size of the ratio (Carrier/Noise). This result also shows that in the recording film of the present invention,
It was found that the sensitivity was even higher than that of conventional recording films.

実施例3 希ガスと炭化水素ガス又は炭化水素ガス中でCu、Te
合金ターゲットをスパッタすると、記録膜中のCu T
e合金の組成がCu Te合金ターゲットの組成と等し
くなくなり、記録膜中でTeが多くなることがある。そ
こで、第4図に示した装置を用い、Cu Te合金ター
ゲットの組成を変えた他は、実施例1と同様な条件下で
成膜し、CuTe合金ターゲットの組成と記録膜中のC
u Te合金の組成の関係をICP(誘導結合型プラズ
マ発光分光分析)法によって分析した。この分析結果を
第7図に示す。記録膜14のAu Te組成は、ターゲ
ットの組成よりも10%はどTeが多くなる傾向がある
ことが分る。従って、共晶点(Cu27Te6i)の組
成の記録膜を形成するには、Cu27Te6i程度の組
成のターゲットを用いて、情報記録媒体を製造すること
が望ましい。
Example 3 Cu, Te in rare gas and hydrocarbon gas or hydrocarbon gas
When sputtering an alloy target, CuT in the recording film
The composition of the e-alloy may no longer be equal to the composition of the CuTe alloy target, resulting in an increase in Te in the recording film. Therefore, using the apparatus shown in FIG. 4, a film was formed under the same conditions as in Example 1 except that the composition of the CuTe alloy target was changed, and the composition of the CuTe alloy target and the carbon content in the recording film were
The compositional relationship of the uTe alloy was analyzed by ICP (Inductively Coupled Plasma Emission Spectroscopy) method. The results of this analysis are shown in FIG. It can be seen that the AuTe composition of the recording film 14 tends to contain 10% more Te than the composition of the target. Therefore, in order to form a recording film with a composition at the eutectic point (Cu27Te6i), it is desirable to manufacture an information recording medium using a target with a composition around Cu27Te6i.

実施例4 Cu Te合金ターゲットを炭化水素ガスだけでスパッ
タする場合には、次ぎの2つの欠点がある。
Example 4 When sputtering a CuTe alloy target using only hydrocarbon gas, there are the following two drawbacks.

1)Cu Te合金ターゲットを炭化水素ガス100%
の雰囲気中でスパッタして得られる記録膜は、光学吸収
係数(吸収率)が小さくなる。このためレーザ光を吸収
した時に生ずる熱によってピットを形成して情報の記録
を行なうヒートモード記録方式の場合には、記録感度の
低下が認められる。
1) Cu Te alloy target with 100% hydrocarbon gas
The recording film obtained by sputtering in the atmosphere has a small optical absorption coefficient (absorption rate). For this reason, in the case of a heat mode recording method in which information is recorded by forming pits using heat generated when laser light is absorbed, a decrease in recording sensitivity is observed.

2)Cu Te合金ターゲットのスパッタ時に、炭化水
素ガスの分解生成物と考えられる炭素粉のターゲット表
面における不着が顕著なため、長時間連続スパッタをす
るとスパッタ成膜速度が低下する恐れがある。
2) During sputtering of a CuTe alloy target, carbon powder, which is considered to be a decomposition product of hydrocarbon gas, is noticeably non-adherent on the target surface, so if sputtering is performed continuously for a long time, there is a risk that the sputtering film formation rate will decrease.

ここで炭化水素ガスの流量をX1希ガスの流量をYとし
、ガス流量比をQ−(X/ (X十Y))×100%と
定義して、Q−30,50,60及び100%の各ガス
流量比(メタンガスとアルゴンガスを用いた)で成膜し
た記録膜(膜厚250オンオグストローム、組成Cu2
□Tey1)の書込み感度特性を調べた。その結果、第
8図に示す。
Here, the flow rate of hydrocarbon gas is X1, the flow rate of rare gas is Y, and the gas flow rate ratio is defined as Q-(X/ (X0Y))×100%, and Q-30, 50, 60 and 100%. A recording film (thickness: 250 Å, composition: Cu2
□Writing sensitivity characteristics of Tey1) were investigated. The result is shown in FIG.

この感度特性を検出する際、回転数は1850 rp曽
、パルス幅は6’ On5eeとした。この検出結果に
より、Q−100%の場合は、一定の再生信号振幅を得
るのに必要なレーザパワーが他のQ値のものに比べ、大
きく書込み感度が悪化していることが分る。また各Q値
下でのターゲット表面の状態はQ−100%の場合が最
も黒変し、付着物が多かった。Q値が減少するにつれて
、付着物の割合は低下する傾向にあった。第9図は、第
8図と同じ条件下において種々のQ値下で成膜した記録
膜について、第5図と同じ加速条件でエラーレートを測
定した結果を示す。従って、スパッタ条件Qは、第8図
と第9図の結果から、5≦Q≦50%が好ましいことが
分る。
When detecting this sensitivity characteristic, the rotation speed was set to 1850 rpm, and the pulse width was set to 6' On5ee. From this detection result, it can be seen that in the case of Q-100%, the laser power required to obtain a constant reproduced signal amplitude deteriorates the writing sensitivity significantly compared to other Q values. Furthermore, regarding the state of the target surface under each Q value, in the case of Q-100%, the target surface turned black the most and had more deposits. As the Q value decreased, the percentage of deposits tended to decrease. FIG. 9 shows the results of measuring error rates under the same acceleration conditions as in FIG. 5 for recording films formed under various Q values under the same conditions as in FIG. 8. Therefore, it can be seen from the results of FIGS. 8 and 9 that the sputtering condition Q is preferably 5≦Q≦50%.

実施例4 ガス流量比Qのスパッタレートに及ぼす高価をみたのが
、第10図である。Q−50%(ガスはメタンガスとア
ルゴンガス、メタンガスの流量はIO3CCM)を越え
る条件でスパッタを続けていくと、スパッタレートが減
少していく。第10図及び第11図において、スパッタ
レートは第1回目の値を1として規格化しである。第1
2図は同一流量比(Q−50%)ながら、炭化水素ガス
(CM  ガス)の流量を10.20及び11005C
Cとした場合のスパッタレートを示している。流量が多
くなると、ターゲット表面の付着物は多くなる傾向があ
った。従って、炭化水素ガスの流量はIO8CCM以下
が好ましいことが分る。
Example 4 FIG. 10 shows the effect of the gas flow rate ratio Q on the sputtering rate. When sputtering is continued under conditions exceeding Q-50% (methane gas and argon gas, flow rate of methane gas is IO3CCM), the sputtering rate decreases. In FIGS. 10 and 11, the sputtering rate is normalized with the first value being 1. 1st
Figure 2 shows the flow rate of hydrocarbon gas (CM gas) at 10.20 and 11005C with the same flow rate ratio (Q-50%).
The sputtering rate when C is shown. As the flow rate increased, the amount of deposits on the target surface tended to increase. Therefore, it can be seen that the flow rate of hydrocarbon gas is preferably IO8CCM or less.

尚、本実施例においては、炭化水素ガス(メタン)と希
ガス(アルゴン)の混合雰囲気下でCuTeターゲット
をスパッタ放電したが、炭化水素ガスだけの雰囲気下で
放電させてもよい。
In this example, the CuTe target was sputter-discharged in a mixed atmosphere of hydrocarbon gas (methane) and rare gas (argon), but it may be discharged in an atmosphere of only hydrocarbon gas.

さらに本実施例においては、透明な有機樹脂基板を用い
たが、書込み及び再生レーザ光を、基板を透過させない
で記録膜面側から入射させるときは、基板は不透明であ
ってもよい。
Further, in this embodiment, a transparent organic resin substrate is used, but the substrate may be opaque when the writing and reproducing laser beams are made incident from the recording film side without passing through the substrate.

[発明の効果] 以上説明したように本発明によれば、高温高湿の環境下
でも優れた耐酸化性を示し、長寿命、高感度の光記録膜
を有する情報記録媒体を提供できる。
[Effects of the Invention] As described above, according to the present invention, it is possible to provide an information recording medium having an optical recording film that exhibits excellent oxidation resistance even in a high temperature and high humidity environment, has a long life, and has high sensitivity.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の情報記録媒体の断面図、第
2図は記録膜の膜厚と書込み感度の関係を示す図、第3
図は再生時間と反射レベルの変化を示す図、第4図は第
1図に示す情報記録媒体を製造するためのスパッタ装置
を示す図、第5図は加速条件を経た記録膜のエラーレー
トを示す図、第6図は記録膜の記録感度を比較した結果
を示す図、第7図はCu Te合金ターゲットの組成と
記録膜中のAu Te合金の組成の関係を示す図、第8
図は各ガス流量比についての書込みレーザパワーと変調
度の関係を示す図、第9図は各ガス流量比についての加
速時間とエラーレートの関係を示す図、第10図は各ガ
ス流量比についてのスパッタレートの変化を示す図、第
11図は各炭化水素ガス流量についてのスパッタレート
の変化を示す図である。 13 ・・・ 基板 14 ・・・ 記録膜 18 ・・・ 情報記録媒体
FIG. 1 is a cross-sectional view of an information recording medium according to an embodiment of the present invention, FIG. 2 is a diagram showing the relationship between recording film thickness and writing sensitivity, and FIG.
The figure shows changes in playback time and reflection level, Figure 4 shows a sputtering apparatus for manufacturing the information recording medium shown in Figure 1, and Figure 5 shows the error rate of the recording film under acceleration conditions. 6 is a diagram showing the results of comparing the recording sensitivities of the recording films. FIG. 7 is a diagram showing the relationship between the composition of the Cu Te alloy target and the composition of the Au Te alloy in the recording film.
The figure shows the relationship between writing laser power and modulation degree for each gas flow rate ratio, Figure 9 shows the relationship between acceleration time and error rate for each gas flow rate ratio, and Figure 10 shows the relationship between each gas flow rate ratio. FIG. 11 is a diagram showing changes in sputter rate for each hydrocarbon gas flow rate. 13... Substrate 14... Recording film 18... Information recording medium

Claims (2)

【特許請求の範囲】[Claims] (1)基板と、 この基板上に形成され、レーザ光の照射により情報が記
録される、Cu−Te合金並びに炭素及び水素を含む記
録膜と、 を具備したことを特徴とする情報記録媒体。
(1) An information recording medium comprising: a substrate; and a recording film containing a Cu-Te alloy, carbon and hydrogen, formed on the substrate and on which information is recorded by irradiation with laser light.
(2)基板と、 この基板上に形成され、レーザ光の照射により情報が記
録される、Cuの含有量が2原子%乃至40原子%の範
囲内であるCu−Te合金並びに素及び水素を含む記録
膜と、 を具備したことを特徴とする情報記録媒体。
(2) A substrate, a Cu-Te alloy with a Cu content in the range of 2 atomic % to 40 atomic %, and elements and hydrogen formed on this substrate and on which information is recorded by irradiation with laser light. An information recording medium comprising: a recording film containing the following:
JP63300678A 1988-11-30 1988-11-30 Information recording medium Pending JPH02147385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63300678A JPH02147385A (en) 1988-11-30 1988-11-30 Information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63300678A JPH02147385A (en) 1988-11-30 1988-11-30 Information recording medium

Publications (1)

Publication Number Publication Date
JPH02147385A true JPH02147385A (en) 1990-06-06

Family

ID=17887759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63300678A Pending JPH02147385A (en) 1988-11-30 1988-11-30 Information recording medium

Country Status (1)

Country Link
JP (1) JPH02147385A (en)

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