JPH02167778A - Information recording medium - Google Patents

Information recording medium

Info

Publication number
JPH02167778A
JPH02167778A JP63322043A JP32204388A JPH02167778A JP H02167778 A JPH02167778 A JP H02167778A JP 63322043 A JP63322043 A JP 63322043A JP 32204388 A JP32204388 A JP 32204388A JP H02167778 A JPH02167778 A JP H02167778A
Authority
JP
Japan
Prior art keywords
film
atomic
recording medium
information
recording film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63322043A
Other languages
Japanese (ja)
Inventor
Hideki Okawa
秀樹 大川
Norio Ozawa
小沢 則雄
Motonari Matsubara
松原 基成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP63322043A priority Critical patent/JPH02167778A/en
Publication of JPH02167778A publication Critical patent/JPH02167778A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24308Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24316Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318Non-metallic elements
    • G11B2007/24328Carbon
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B7/2437Non-metallic elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

PURPOSE:To make possible the manufacture of a recording film which demonstrates high oxidation resistance, long life and high sensitivity even at high temperature and humidity by forming a recording film, containing (Cu, Te100-x)ySez(2<=x<=40 atomic %, 80<=y<=95 atomic %, 5<=z<=20 atomic %) alloy as well as carbon and hydrogen, where information is recorded by projecting laser beam to the surface of a substrate. CONSTITUTION:An information recording medium 18 consists of a substrate 13 and many recording films 14 laminated on the substrate 13. The substrate 13 used is made of a transparent material for a laser beam projected to an information recording medium 18 for recording and retrieving information. The recording film 14 containing (Cu, Te100-z)ySez(2<=x<=40 atomic %, 80<=y<=95 atomic %, 5<=z<=20 atomic %) alloy as well as carbon and hydrogen is a binary intermetallic compound of Cu-Te. Cu27 and Te73 showing an eutectic point fuse at less than 330 deg.C or a temperature lower than Te. The composition of Cu should range from 2 to 40atomic %, considering the fusion point. The composition of Se should range within the limits of 5<=z<=20.

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、例えばレーザ光の照射により情報の記録及び
再生が行われる情報記録媒体に関する。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to an information recording medium on which information is recorded and reproduced by, for example, irradiation with laser light.

(従来の技術) レーザ光の照射により情報が記録され、さらに、記録さ
れた情報の再生がなされる情報記録媒体の一種として、
Teを主成分とする記録膜を具備したものが開発されて
いる。さらに、このTeを主成分とする記録膜に炭素並
びに水素を含んだ記録膜が開発され、実用化に至ってい
る(特開昭58−9234号公報参照)。
(Prior Art) As a type of information recording medium, information is recorded by irradiation with laser light and the recorded information is reproduced.
A device equipped with a recording film containing Te as a main component has been developed. Furthermore, a recording film containing carbon and hydrogen in addition to the Te-based recording film has been developed and put into practical use (see Japanese Patent Laid-Open No. 58-9234).

この記録膜を作成する際には、テルル(Te )を炭化
水素ガスを含む雰囲気中でスパッタする。
When creating this recording film, tellurium (Te) is sputtered in an atmosphere containing hydrocarbon gas.

すると、Te単体の膜(Te膜)よりも高感度でかつ耐
酸化性能に優れた記録膜(以下Te −C膜と称す)が
得られる。この記録膜は、非晶質膜であり、テルル(T
e ) 、炭素(C)及び水素(H)を含み、また少な
くとも炭素(C)と水素(H)は化学結合していること
が分っている。この記録膜は、Te膜にならってテルル
(Te )と炭化水素をソースとする蒸着(プラズマを
用いない)で形成しようとしても形成することができず
、プラズマを利用して初めて得られる。これは、炭化水
素ガスがプラズマ中で一旦分解した後、炭素(C)と水
素(H)が化学反応をして成膜されるためであり、これ
が光記録膜形成時の大きな特徴となっている。
As a result, a recording film (hereinafter referred to as a Te-C film) having higher sensitivity and superior oxidation resistance than a film containing only Te (Te film) is obtained. This recording film is an amorphous film, and is tellurium (T).
e) contains carbon (C) and hydrogen (H), and it is known that at least carbon (C) and hydrogen (H) are chemically bonded. This recording film cannot be formed even if it is attempted to be formed by vapor deposition using tellurium (Te) and hydrocarbons as sources (without using plasma), following the Te film, and can only be obtained by using plasma. This is because after the hydrocarbon gas is decomposed in the plasma, carbon (C) and hydrogen (H) undergo a chemical reaction to form a film, and this is a major feature when forming an optical recording film. There is.

(発明が解決しようとする課題) 上記のようなTe及び炭化水素からなる記録膜と、テル
ル(Te )で形成された記録膜とを65℃−90%の
高温高湿中(加速条件下)において比較すると、Te膜
はわずか1週間以内に酸化して光記録性能が損われるの
に対し、Te −C膜は1ケ月を経過しても膜の内部ま
では酸化されず安定であった。しかしながら、Te −
C膜も高温下(約75℃以上)では記録膜が結晶化して
表面がざらつくためにノイズが増大し、再生信号に与え
る影響が大きくなるといった問題点があった。
(Problems to be Solved by the Invention) A recording film made of Te and hydrocarbons as described above and a recording film made of tellurium (Te) were heated at 65°C and 90% high temperature and high humidity (under accelerated conditions). In comparison, the Te film was oxidized within just one week and the optical recording performance was impaired, whereas the Te--C film was stable without being oxidized to the inside of the film even after one month had passed. However, Te −
The C film also has the problem that at high temperatures (about 75° C. or higher), the recording film crystallizes and the surface becomes rough, increasing noise and increasing the influence on reproduced signals.

本発明は、上記問題点を解決するために、高温高湿の環
境下においても、容易に表面がざらつくことのなく、長
寿命でしかも正確な再生信号を得ることのできる情報記
録媒体を提供することを目的とする。
In order to solve the above-mentioned problems, the present invention provides an information recording medium that does not easily become rough even under high temperature and high humidity environments, has a long lifespan, and can obtain accurate reproduction signals. The purpose is to

[発明の構成] (課題を解決するための手段) 本発明は上記目的を達成するために、基板と、この基板
上に形成され、レーザ光の照射により情報が記録される
、(Cu x Te 1oo−* )  Se x(2
≦X≦40原子%、80≦y≦95原子%、5≦2≦2
0原子%)合金並びに炭素及び水素を含む記録膜とを具
備した情報記録媒体を提供するものである。
[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the present invention includes a substrate, and a (Cu 1oo-*) Sex(2
≦X≦40 atomic%, 80≦y≦95 atomic%, 5≦2≦2
0 atomic %) alloy and a recording film containing carbon and hydrogen.

(作 用) 本発明の情報記録媒体に具備されている記録膜において
は、Cu Te Se合金並びに炭素及び水素を含むこ
とにより、高温高湿下の状態においても、記録した情報
を安定に維持し、且つ記録感度の優れた情報記録媒体と
することができるものである。
(Function) The recording film included in the information recording medium of the present invention stably maintains recorded information even under high temperature and high humidity conditions by containing CuTeSe alloy, carbon and hydrogen. , and an information recording medium with excellent recording sensitivity can be obtained.

(実施例) 以下、本発明の一実施例を図面を参照して説明する。(Example) Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第1図は、本発明の情報記録媒体の構造を概略的に示し
た断面図である。本発明の情報記録媒体は、基板13及
びこの基板13上に積層された記録WA14により構成
されるものである。
FIG. 1 is a cross-sectional view schematically showing the structure of the information recording medium of the present invention. The information recording medium of the present invention is composed of a substrate 13 and a recording WA 14 laminated on the substrate 13.

基板13は、情報の記録及び再生のために情報記録媒体
18上に照射されるレーザ光に対して、透明な材質のも
のが用いられる。例えば、近赤外近傍の発振波長を有す
るレーザ光を用いる場合は、ポリカーボネイト(PC)
、ポリメチルメタクリレート(PMMA) 、ガラス、
ポリオレフィン並びにエポキシ樹脂等が用いられる。
The substrate 13 is made of a material that is transparent to the laser beam irradiated onto the information recording medium 18 for recording and reproducing information. For example, when using a laser beam with an oscillation wavelength near infrared, polycarbonate (PC)
, polymethyl methacrylate (PMMA), glass,
Polyolefins, epoxy resins, etc. are used.

また、記録膜14は、Cu−Te合金に炭素並びに水素
を含ませているものである。
The recording film 14 is made of a Cu-Te alloy containing carbon and hydrogen.

この記録膜に含まれている(Cu * Te 100−
i )Set合金におけるCuの組成の範囲について説
明する。既に知られている通り、Cu−Te二元系の状
態図によれば、金属間化合物として、Cu 2 Te 
、Cu< Te5、CuTeのが存在することがわかっ
ている。しかしながら、これらの化合物では、各々融点
が1125℃、800℃、600℃とTe単体の融点よ
りもはるかに高い。少なくとも記録膜14が融解するこ
とによって、ピットが形成されるヒートモード記録に対
しては、Teよりも高い融点を有する材料はあまり魅力
がない。しかしながら、共晶点を示すCu27T e 
73は、330℃以下とTeよりも低い温度で融解する
。この点を考慮し、Cuの組成は、2〜4o原子%の範
囲が良好であることがわかる。
This recording film contains (Cu*Te 100-
i) The composition range of Cu in the Set alloy will be explained. As already known, according to the phase diagram of the Cu-Te binary system, Cu 2 Te is an intermetallic compound.
, Cu<Te5, it is known that CuTe exists. However, the melting points of these compounds are 1125° C., 800° C., and 600° C., which are much higher than the melting point of Te alone. At least for heat mode recording in which pits are formed by melting the recording film 14, materials having a higher melting point than Te are not very attractive. However, Cu27Te exhibiting a eutectic point
73 melts at a temperature of 330° C. or lower, which is lower than Te. Considering this point, it is found that the Cu composition is preferably in the range of 2 to 4 atomic percent.

また、Seの組成の範囲は、5≦2≦20原子%の範囲
とする。これは、例えばSeの組成の範囲が5原子%未
満の場合は、耐酸化性向上の効果を十分に得ることがで
きず、また、20原子%を越えると光学的な吸収率が減
少するためである。
Further, the composition range of Se is 5≦2≦20 atomic %. This is because, for example, if the composition range of Se is less than 5 at%, the effect of improving oxidation resistance cannot be obtained sufficiently, and if it exceeds 20 at%, the optical absorption rate decreases. It is.

さらに、記録膜14の膜厚は、仮に1000オングスト
ローム以上の場合には、書込み感度が低下してしまうた
めに好ましくなく、1000オングストローム以下であ
ることが必要であるが、好ましくは500オングストロ
ーム以下、さらに好ましくは100〜300オングスト
ロームの範囲がよい。これは第2図に示すように、パル
ス幅60 n5ecs線速5.5m/seeの条件下で
pc基板12側からレーザを入射した場合の書込み感度
特性からも明らかである。また、100オングストロー
ム以下になると、記録膜14自身が不連続になってピン
ホールが形成される確率が増加するため好ましくない。
Furthermore, if the thickness of the recording film 14 is 1000 angstroms or more, it is not preferable because the writing sensitivity will decrease, and it is necessary to be 1000 angstroms or less, but preferably 500 angstroms or less, and more preferably 500 angstroms or less. Preferably, the thickness is in the range of 100 to 300 angstroms. This is also clear from the writing sensitivity characteristics when the laser is incident from the PC board 12 side under conditions of a pulse width of 60 n5 ecs and a linear velocity of 5.5 m/see, as shown in FIG. Further, if the thickness is less than 100 angstroms, the recording film 14 itself becomes discontinuous and the probability of pinhole formation increases, which is not preferable.

このピンホールは、ヒートモード記録の場合は、情報の
読出し時に、ビットと間違って検出してしまう可能性が
ある他、記録膜14の酸化のトリガーともなる。
In the case of heat mode recording, this pinhole may not only be mistakenly detected as a bit when reading information, but also trigger oxidation of the recording film 14.

次に、第1図に示した情報記録媒体18における再生レ
ーザパワーの許容度(記録膜14に変質を起こすことな
く再生できるパワーレベル)について説明する。ビット
して記録された情報を読出すための再生レーザ光は、通
常、連続発振したレーザ光である。この状態において、
良好なS/N比を得て情報を再生するためには、再生レ
ーザパワーも大きくする必要がある。しかしながら、こ
の再生レーザパワーがある閾値を越えると、ビットを破
壊し、しかも、再生反射光のレベルが低下することがあ
る。そこで、線速5.5m/seeで回転している情報
記録媒体18において、この情報記録媒体18に形成さ
れたトラックに連続的にホールドし、再生レーザ光のレ
ーザパワーを変化させて、反射光レベルの変化をシンク
ロスコープで観察した。その観察結果を第3図に示す。
Next, the tolerance of the reproduction laser power (the power level at which reproduction can be performed without causing deterioration of the recording film 14) in the information recording medium 18 shown in FIG. 1 will be explained. A reproduction laser beam for reading out information recorded as bits is usually a continuously oscillated laser beam. In this state,
In order to obtain a good S/N ratio and reproduce information, it is also necessary to increase the reproduction laser power. However, if the reproduction laser power exceeds a certain threshold, the bits may be destroyed and the level of the reproduction reflected light may decrease. Therefore, the information recording medium 18 rotating at a linear velocity of 5.5 m/see is continuously held on the track formed on the information recording medium 18, and the laser power of the reproduction laser beam is changed, so that the reflected light Changes in level were observed using a synchronoscope. The observation results are shown in Figure 3.

尚、この第3図に示す反射光のレベルは、再生直後のも
のを1として規格化しであるものである。
Incidentally, the level of reflected light shown in FIG. 3 is normalized with the level immediately after reproduction as 1.

この観察結果によれば、との膜厚の記録膜においても、
0.6又は0.8mWのレーザパワーならば、3時間は
反射光のレベルが変化しなかった。
According to this observation result, even for a recording film with a film thickness of
With a laser power of 0.6 or 0.8 mW, the level of reflected light did not change for 3 hours.

しかしながら、レーザパワーを1mWにすると、数時間
で反射光のレベルが低下した。そしてこの場合、膜厚の
薄い方が低下の程度が大きかった。
However, when the laser power was set to 1 mW, the level of reflected light decreased within several hours. In this case, the smaller the film thickness, the greater the degree of decrease.

現在標準化が進みつつある追記型記録膜の再生許容パワ
ーは、回転数1800rpm、線速5.5m/seeの
場合には、最大で0.5mWと決められ、しかも、許容
最大再生レーザパワーP max(llW)は、Pma
x−0,2+0.55Vで与えられている。ここでVは
、情報記録媒体の線速度(m /see )を示してい
る。また、p maxで10サイクル連続的に再生して
も、反射光レベルに変化がないことが要求されているが
、回転数1800 rpm s線速5.5a+/see
の場合においては。
The permissible reproducing power of the write-once recording film, which is currently being standardized, is determined to be a maximum of 0.5 mW at a rotation speed of 1800 rpm and a linear velocity of 5.5 m/see, and the maximum permissible reproducing laser power P max (llW) is Pma
It is given by x-0,2+0.55V. Here, V indicates the linear velocity (m/see) of the information recording medium. Also, it is required that there is no change in the level of reflected light even after 10 cycles of continuous reproduction at p max, but the rotation speed is 1800 rpm and the linear speed is 5.5a+/see.
In the case of.

少なくとも1時間は変化してはならないということであ
る。従って、該条件下で08+nWのパワーでも3時間
まで変化が起こらない本発明の記録膜14は、十分にこ
れらの要求を満たすことになる。
This means that it should not change for at least one hour. Therefore, under these conditions, the recording film 14 of the present invention, which does not change for up to 3 hours even with a power of 08+nW, satisfies these requirements.

実施例1 まず、第1図に示した情報記録媒体18を形成する方法
について説明する。
Example 1 First, a method for forming the information recording medium 18 shown in FIG. 1 will be described.

第4図は、本発明の情報記録媒体18を形成するスパッ
タ装置の概略図である。まず、このスパッタ装置のバル
ブ2をロータリーポンプ3側に開き、チェンバ1内をQ
、  2Torrまで排気した。
FIG. 4 is a schematic diagram of a sputtering apparatus for forming the information recording medium 18 of the present invention. First, open the valve 2 of this sputtering device to the rotary pump 3 side, and let the inside of the chamber 1 pass through the Q
, and evacuated to 2 Torr.

次いで、バルブ2をクライオポンプ5側に開いて1 x
 10−’Torr以下まで排気した。この時、排気量
は制御する必要がないので、コンダクタンスバルブ4は
全開しておいた。
Next, open valve 2 to the cryopump 5 side and
It was evacuated to below 10-' Torr. At this time, since there was no need to control the displacement, the conductance valve 4 was left fully open.

次に、バルブ6を開けて、A「ガスライン7からArガ
スをマスフローコントローラ(図示せず)で調節しなが
ら、チェンバ1内にIOSCCM導入した。次いで、チ
ェンバ1内の圧力をイオンゲージ(図示せず)でモニタ
ーしながら、コンダクタンスバルブ4で5 X 10−
3Torrに調整した。
Next, the valve 6 was opened, and the IOSCCM was introduced into the chamber 1 while adjusting the Ar gas from the A gas line 7 using a mass flow controller (not shown).Then, the pressure inside the chamber 1 was measured using an ion gauge (see the figure). 5 x 10- with conductance valve 4 while monitoring with
It was adjusted to 3 Torr.

この圧力が変動しないことを確認してから、Cu−Te
合金ターゲット9(直径5インチ;組成はCu 27T
 e 73 ;原子%)に、DCパワーサプライ10か
ら100Wを印加し、シャッタ11を閉じたままスパッ
タ放電を5分間行なってスパッタクリーニングをした。
After confirming that this pressure does not fluctuate, the Cu-Te
Alloy target 9 (5 inches in diameter; composition is Cu 27T)
e 73 ; at.

Arガスの供給とDCパワーの供給を停止した後、クラ
イボンブ5を用いてチェンバ1内を一旦I X 10−
5Torr以下に排気した。その後バルブ6.17及び
25を開けてチェンバ1内にA「ガスとCH4ガスと5
e(CH*)2ガスをArガスライン7とCH4ガスラ
イン8とSe (CR2)2ガスライン26を通して、
マスフローコントローラ(図示せず)で調節しながら、
各々10110及び5SCCM導入した。次いで、コン
ダクタンスバルブ4を用いて、チェンバ1内の圧力を5
X 10−3Torrに制御した。その後、圧力変動が
ないことを確認した後、CuTeターゲット9にDCパ
ワーサプライ10から100Wを印加し、スパッタ放電
させた。安定に放電していることを確認した後、シャッ
タ11を開けて、予め回転子12にセットしておいたポ
リカーボネート(P C)基板13上に、Cu Te合
金並びに炭素及び水素を含んだ記録膜14を積層した。
After stopping the supply of Ar gas and the supply of DC power, the inside of the chamber 1 is once IX10-
The exhaust was evacuated to 5 Torr or less. After that, open the valves 6.17 and 25 and fill the chamber 1 with A gas, CH4 gas and 5
e(CH*)2 gas is passed through the Ar gas line 7, CH4 gas line 8, and Se (CR2)2 gas line 26,
while adjusting with a mass flow controller (not shown).
10,110 and 5 SCCM were introduced, respectively. Next, the pressure inside the chamber 1 is reduced to 5 using the conductance valve 4.
The pressure was controlled at 10-3 Torr. Thereafter, after confirming that there was no pressure fluctuation, 100 W was applied to the CuTe target 9 from the DC power supply 10 to cause sputter discharge. After confirming that the discharge is stable, the shutter 11 is opened and a recording film containing CuTe alloy and carbon and hydrogen is placed on the polycarbonate (PC) substrate 13 that has been set in advance on the rotor 12. 14 were laminated.

回転子12は60 rpIllで回転させた。記録膜1
4の膜厚が、250オングストロームとなったところで
、シャッタを閉じ、パワーの供給を停止した。次いで、
コンダクタンスバルブ4を全開し、クライオポンプ5を
用いてチェンバ1内をI X 10−’Torr以下ま
で排気した。その後、バルブ15を開けて、N2ガスラ
イン16からN2ガスをチェンバ1内に導入して大気圧
に戻した後、情報記録媒体18を取出した。
Rotor 12 was rotated at 60 rpIll. Recording film 1
When the film thickness of No. 4 reached 250 angstroms, the shutter was closed and the power supply was stopped. Then,
The conductance valve 4 was fully opened, and the inside of the chamber 1 was evacuated to below I.times.10-' Torr using the cryopump 5. Thereafter, the valve 15 was opened and N2 gas was introduced into the chamber 1 from the N2 gas line 16 to return the pressure to atmospheric pressure, and then the information recording medium 18 was taken out.

このようにして形成された情報記録媒体18の記録膜1
4は、X線回折分析の結果、特定の回折角度からの回折
ピークが認められないアモルファス膜であることが確認
された。このアモルファス膜は、多結晶膜と異なり結晶
粒界が存在しないため、再生レーザ光が粒界部分で変調
されて粒界ノイズを生ずることがない。
Recording film 1 of information recording medium 18 formed in this way
As a result of X-ray diffraction analysis, Sample No. 4 was confirmed to be an amorphous film in which no diffraction peak was observed from a specific diffraction angle. Unlike a polycrystalline film, this amorphous film does not have grain boundaries, so that the reproduced laser light is not modulated at the grain boundaries and does not generate grain boundary noise.

記録膜14にCu Te Se三元合金と炭素(C)及
び水素(H)を含ませるためには、AuTeSe合金タ
ーゲットを炭化水素ガス中でスパッタしたり、Cu T
e合金ターゲットをアルキルセレンガス中でスパッタす
るのではなく、CuTe合金ターゲットを炭化水素ガス
とアルキルセレンガスとを含む雰囲気中でスパッタする
。このスパッタ方法によれば、記録膜中のセレン(Se
 )の量をこのセレンを含むガスの流量を調節すること
により容易に制御でき、しかも記録114中の炭素及び
水素の量もアルキルセレンガスの分解だけに依存せずに
、炭化水素ガス流量の調節で容易に制御できるものであ
る。また、銅(Cu ) 、テルル(Te )及びセレ
ン(Se )の三成分からなるターゲットを用いなくて
もよいし、ターゲットの連続的なスパッタに伴う記録膜
の組成ズレも防止できる。
In order to include the CuTeSe ternary alloy, carbon (C) and hydrogen (H) in the recording film 14, an AuTeSe alloy target can be sputtered in a hydrocarbon gas, or a CuTeSe alloy target can be sputtered in a hydrocarbon gas.
Rather than sputtering an e-alloy target in an alkyl selenium gas, a CuTe alloy target is sputtered in an atmosphere containing a hydrocarbon gas and an alkyl selenium gas. According to this sputtering method, selenium (Se
) can be easily controlled by adjusting the flow rate of this selenium-containing gas, and the amount of carbon and hydrogen in the record 114 does not depend only on the decomposition of alkyl selenium gas, but can be easily controlled by adjusting the flow rate of the hydrocarbon gas. can be easily controlled. Furthermore, it is not necessary to use a target consisting of the three components of copper (Cu), tellurium (Te), and selenium (Se), and it is possible to prevent compositional deviation of the recording film due to continuous sputtering of the target.

実施例2 実施例1に示した方法により製造された情報記録媒体1
8において、耐酸化性の指標となる酸化による表面のざ
らつきの結果生じる読出しエラーの比率(エラーレート
)を分析した。75℃−90%の加速条件下で、実施例
1に示したのと同じ膜厚のTe膜及びTe−C膜、並び
に本発明の記録膜14を含有する情報記録媒体18を一
定時間放置した後、情報の書込みを行ないエラーレート
を測定した。その結果を第5図に示す。この図に示すエ
ラーレートは、加速条件下に置く前の値を1として規格
化した。この測定結果によれば、Te膜はわずtS数日
でエラーレートが増加した。
Example 2 Information recording medium 1 manufactured by the method shown in Example 1
8, the ratio of read errors (error rate) resulting from surface roughness due to oxidation, which is an index of oxidation resistance, was analyzed. The information recording medium 18 containing the Te film and Te-C film having the same film thickness as shown in Example 1 and the recording film 14 of the present invention was left for a certain period of time under accelerated conditions of 75° C. and 90%. After that, information was written and the error rate was measured. The results are shown in FIG. The error rate shown in this figure was normalized by setting the value before the acceleration condition to 1. According to the measurement results, the error rate of the Te film increased after just a few days of tS.

Te−C膜においても、100時間以後は徐々に増加し
た。一方、本発明の記録膜14においては、1000時
間放置してもほとんど変化をしなかった。従って、本発
明の記録膜14においては、高温高湿下でも耐酸化性が
良好で、長寿命であることが分る。尚、この記録膜14
は、この測定後にX線回折分析をした時も非晶質膜であ
った。
In the Te-C film as well, it gradually increased after 100 hours. On the other hand, the recording film 14 of the present invention showed almost no change even after being left for 1000 hours. Therefore, it can be seen that the recording film 14 of the present invention has good oxidation resistance even under high temperature and high humidity, and has a long life. Note that this recording film 14
When X-ray diffraction analysis was performed after this measurement, it was found to be an amorphous film.

次に、パルス幅50 n5ee%書込み周波数37MH
z、波長830 na+のGa As系半導体レーザを
用い、対物レンズの開口数(NA)0.52、線速5.
 5m /seeの条件下で、Te −C膜とCuTe
 5e−C膜に書込んだ場合のC/N(Carr1er
/ N oise)の大きさを分析した。この検出結果
を第6図に示す。第6図に示す分析結果によれば、本発
明の記録膜14は、従来のTe −C膜と比較して、さ
らに高感度になっていることが分る。
Next, pulse width 50n5ee% write frequency 37MH
z, a GaAs semiconductor laser with a wavelength of 830 na+ was used, the numerical aperture (NA) of the objective lens was 0.52, and the linear velocity was 5.
Under the condition of 5m/see, Te-C film and CuTe
C/N (Carr1er) when writing to 5e-C film
/N oise) was analyzed. The detection results are shown in FIG. According to the analysis results shown in FIG. 6, it can be seen that the recording film 14 of the present invention has higher sensitivity than the conventional Te--C film.

尚、上記に記載した実施例においては、情報記録媒体1
8の製造方法として、炭化水素ガス(メタン)とアルキ
ルセレンガス(Se  (CH3) 2 )と希ガス(
アルゴン)の混合雰囲気下でAu Teターゲットをス
パッタ放電した場合について説明したが、必ずしもこれ
に限定されるものではなく、例えば、希ガスを含まない
雰囲気下で放電させてもよい。
In addition, in the embodiment described above, the information recording medium 1
8, hydrocarbon gas (methane), alkyl selenium gas (Se (CH3) 2) and rare gas (
Although a case has been described in which the AuTe target is sputter-discharged in a mixed atmosphere of argon), the present invention is not necessarily limited to this, and for example, the discharge may be performed in an atmosphere that does not contain a rare gas.

さらに、本発明の情報記録媒体においては、基板13と
して、透明な有機樹脂基板を用いたもので説明したが、
情報の書込み及び再生レーザ光を記録膜14面側から入
射させる場合には、この基板13は、不透明の材質のも
ので形成させてもよい。
Furthermore, in the information recording medium of the present invention, a transparent organic resin substrate was used as the substrate 13 in the explanation;
When the information writing and reproducing laser beam is made to enter from the side of the recording film 14, the substrate 13 may be formed of an opaque material.

[発明の効果] 以上説明したように本発明においては、高温高温の環境
下においても、耐酸化性に優れ、長寿命及び高感度であ
る記録膜を有する情報記録媒体を提供できる。
[Effects of the Invention] As described above, the present invention can provide an information recording medium having a recording film that has excellent oxidation resistance, long life, and high sensitivity even in high-temperature environments.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例である情報記録媒体の断面図
、第2図は記録膜の膜厚と書込み感度の関係を示す図、
第3図は再生時間と反射レベルの変化を示す図、第4図
は第1図に示す情報記録媒体を形成する光記録膜形成装
置の構成を示す図、第5図は加速条件を経た記録膜のエ
ラーレートを示す図、第6図は記録膜の記録感度を示す
図である。
FIG. 1 is a cross-sectional view of an information recording medium that is an embodiment of the present invention, and FIG. 2 is a diagram showing the relationship between recording film thickness and writing sensitivity.
Fig. 3 is a diagram showing changes in playback time and reflection level, Fig. 4 is a diagram showing the configuration of an optical recording film forming apparatus for forming the information recording medium shown in Fig. 1, and Fig. 5 is a diagram showing recording after undergoing acceleration conditions. FIG. 6 is a diagram showing the error rate of the film, and FIG. 6 is a diagram showing the recording sensitivity of the recording film.

Claims (1)

【特許請求の範囲】[Claims] (1)基板と、 この基板上に形成され、レーザ光の照射により情報が記
録される、(Cu_xTe_1_0_0_−_x)_y
Se_z(2≦x≦40原子%、80≦y≦95原子%
、5≦z≦20原子%)合金並びに炭素及び水素を含む
記録膜と、 を具備したことを特徴とする情報記録媒体。
(1) A substrate, (Cu_xTe_1_0_0_-_x)_y formed on this substrate and on which information is recorded by irradiation with laser light.
Se_z (2≦x≦40 atom%, 80≦y≦95 atom%
, 5≦z≦20 atomic %) alloy, and a recording film containing carbon and hydrogen.
JP63322043A 1988-12-22 1988-12-22 Information recording medium Pending JPH02167778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63322043A JPH02167778A (en) 1988-12-22 1988-12-22 Information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63322043A JPH02167778A (en) 1988-12-22 1988-12-22 Information recording medium

Publications (1)

Publication Number Publication Date
JPH02167778A true JPH02167778A (en) 1990-06-28

Family

ID=18139284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63322043A Pending JPH02167778A (en) 1988-12-22 1988-12-22 Information recording medium

Country Status (1)

Country Link
JP (1) JPH02167778A (en)

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