JPH02147391A - Information recording medium - Google Patents
Information recording mediumInfo
- Publication number
- JPH02147391A JPH02147391A JP63300684A JP30068488A JPH02147391A JP H02147391 A JPH02147391 A JP H02147391A JP 63300684 A JP63300684 A JP 63300684A JP 30068488 A JP30068488 A JP 30068488A JP H02147391 A JPH02147391 A JP H02147391A
- Authority
- JP
- Japan
- Prior art keywords
- film
- recording
- recording film
- recording medium
- information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 5
- 239000011737 fluorine Substances 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 230000008018 melting Effects 0.000 abstract description 8
- 238000002844 melting Methods 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000004417 polycarbonate Substances 0.000 abstract description 4
- 229920000515 polycarbonate Polymers 0.000 abstract description 4
- 229910001215 Te alloy Inorganic materials 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 abstract description 3
- 239000004926 polymethyl methacrylate Substances 0.000 abstract description 3
- 230000010355 oscillation Effects 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 22
- 230000035945 sensitivity Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 239000004215 Carbon black (E152) Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910015369 AuTe Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24322—Nitrogen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24326—Halides (F, CI, Br...)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24328—Carbon
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の目的]
(産業上の利用分野)
本発明は、例えばレーザ光の照射により情報の記録及び
再生が行われる情報記録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to an information recording medium on which information is recorded and reproduced by, for example, irradiation with laser light.
(従来の技術)
レーザ光の照射により情報が記録され、さらに、記録さ
れた情報の再生がなされる情報記録媒体の一種として、
Teを主成分とする記録膜を具備したものが開発されて
いる。さらに、このTeを主成分とする記録膜に炭素並
びに水素を含んだ記録膜が開発され、実用化に至ってい
る(特開昭58−9234号公報参照)。(Prior Art) As a type of information recording medium, information is recorded by irradiation with laser light and the recorded information is reproduced.
A device equipped with a recording film containing Te as a main component has been developed. Furthermore, a recording film containing carbon and hydrogen in addition to the Te-based recording film has been developed and put into practical use (see Japanese Patent Laid-Open No. 58-9234).
この記録膜を作成する際には、Teを炭化水素ガスを含
む雰囲気中でスパッタする。すると、Te単体の膜(T
e膜)よりも高感度でかつ耐酸化性能に優れた記録膜(
以下Te−C膜と称す)が得られる。この記録膜は、非
晶質膜であり、Te1C及びHを含み、また少なくとも
CとHは化学結合をしていることが分っている。When creating this recording film, Te is sputtered in an atmosphere containing hydrocarbon gas. Then, a film of simple Te (T
A recording film (
A Te-C film (hereinafter referred to as Te-C film) is obtained. This recording film is an amorphous film and contains Te1C and H, and it is known that at least C and H are chemically bonded.
この記録膜は、Te膜にならってTeと炭化水素をソー
スとする蒸着(プラズマを用いない)では形成すること
ができず、プラズマを利用して初めて得ることができる
。これは、炭化水素ガスがプラズマ中で一旦分解した後
、CとHが化学反応をして成膜されるためであり、これ
が光記録膜形成時の大きな特徴となっている。This recording film cannot be formed by vapor deposition using Te and hydrocarbon as sources (without using plasma), as in the Te film, but can only be obtained by using plasma. This is because a film is formed by a chemical reaction between C and H after the hydrocarbon gas is once decomposed in plasma, and this is a major feature when forming an optical recording film.
(発明が解決しようとする課題)
しかし、Te−C膜は、記録閾値を越えた書込みレーザ
パワーにおいてはピットが大きく開きまた形状が不揃い
となるため、C/ N (Carrier/ N oi
se)比が急激に低下するという問題点が有った。(Problem to be Solved by the Invention) However, in the Te-C film, the pits open widely and become irregular in shape when the writing laser power exceeds the recording threshold.
There was a problem that the se) ratio suddenly decreased.
本発明は、上記問題点を解決するために、高いC/N比
が得られる情報記録媒体を提供することを目的とする。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, it is an object of the present invention to provide an information recording medium that can obtain a high C/N ratio.
[発明の構成]
(課題を解決するための手段)
本発明は上記目的を達成するために、基板と、この基板
上に形成され、レーザ光の照射により情報が記録される
、Au g Te 100−X (2≦x≦47原子
%)合金並びに炭素、窒素、フッ素及び水素を含む記録
膜とを具備した情報記録媒体を提供するものである。[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the present invention includes a substrate, and an Au g Te 100 film formed on the substrate and on which information is recorded by irradiation with a laser beam. -X (2≦x≦47 atomic %) alloy and a recording film containing carbon, nitrogen, fluorine, and hydrogen.
(作用)
本発明の情報記録媒体においては、記録膜を炭化水素雰
囲気中でスパッタするため、耐酸化性に優れたものとな
る。また、C−Hマトリクス中のレーザ光吸収物質をT
eからAu Teとしたため、融点が450℃から35
0℃に低下し、低パワーでも高感度な記録が可能になる
。さらに、本発明の情報記録媒体は、ビットの口径が小
さく且つ均一に揃うため、高いC/N比が得ることがで
きる。(Function) In the information recording medium of the present invention, since the recording film is sputtered in a hydrocarbon atmosphere, it has excellent oxidation resistance. In addition, the laser light absorbing substance in the C-H matrix is
Since Au Te was used from e, the melting point changed from 450°C to 35°C.
The temperature drops to 0°C, making it possible to record with high sensitivity even with low power. Further, in the information recording medium of the present invention, the diameter of the bits is small and uniformly arranged, so that a high C/N ratio can be obtained.
(実施例) 以下、本発明の一実施例を図面を参照して説明する。(Example) Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第1図は、本発明の情報記録媒体18の構造を概略的に
示した断面図である。本発明の情報記録媒体18は、基
板13及びこの基板13上に積層された記録膜14によ
り構成されるものである。FIG. 1 is a cross-sectional view schematically showing the structure of an information recording medium 18 of the present invention. The information recording medium 18 of the present invention is composed of a substrate 13 and a recording film 14 laminated on the substrate 13.
基板13は、情報の記録及び再生のために情報記録媒体
上に照射されるレーザ光に対して透明な材質のものが用
いられる。例えば、近赤外近傍の発振波長を有するレー
ザ光を用いる場合は、ポリカーボネート(PC)、ポリ
メチルメタクリレ−) (PMMA) 、ガラス、ポリ
オレフィン並びにエポキシ樹脂等が用いられる。The substrate 13 is made of a material that is transparent to laser light that is irradiated onto the information recording medium for recording and reproducing information. For example, when using a laser beam having an oscillation wavelength near infrared, polycarbonate (PC), polymethyl methacrylate (PMMA), glass, polyolefin, epoxy resin, etc. are used.
また、記録膜14は、Au−Te合金に炭素、窒素、フ
ッ素及び水素を含ませているものである。The recording film 14 is made of an Au-Te alloy containing carbon, nitrogen, fluorine, and hydrogen.
本発明におけるAu z Te 、。o−x合金の組成
比について説明する。Au z Te in the present invention. The composition ratio of the ox alloy will be explained.
既に知られている通り、Au−Te二元系の状態図によ
れば、Auの添加量が47原子%までであれば、Teの
融点を若干越えるかそれ以下の融点を持つ。単純には、
Teの融点以下の範囲は、Auが2原子%〜20原子%
となるが、Tel、:AUを加えることによって、ビッ
ト形成時のリムのでき方に変化が生じることになる。こ
の変化により、きれいなリムが形成されるのは、Auの
含有量が2原子%〜47原子%の範囲であることが判明
した。また、Allが47原子%を越えてTeに添加さ
れた記録膜においては、Teの融点よりもかなり高くな
り、レーザ光による記録感度が悪化するために好ましく
ない。As is already known, according to the phase diagram of the Au-Te binary system, if the amount of Au added is up to 47 at %, the melting point will be slightly higher than or lower than the melting point of Te. Simply,
The range below the melting point of Te is 2 at% to 20 at% of Au.
However, by adding Tel, :AU, there will be a change in the way the rim is formed during bit formation. As a result of this change, it was found that a clean rim was formed when the Au content was in the range of 2 at.% to 47 at.%. Furthermore, in a recording film in which Al is added to Te in an amount exceeding 47 atomic %, the temperature becomes considerably higher than the melting point of Te, which is undesirable because the recording sensitivity with laser light deteriorates.
すなわち、本発明においてはsTeの同程度あるいはT
eよりも低い融点てビットが形成され、しかも、ビット
の大きさが揃いかつリム部分が少なくなって記録密度が
高まる等の効果を得るために、Auの含有量は、2原子
%〜47原子%の範囲とする。That is, in the present invention, the same degree of sTe or T
In order to obtain effects such as forming bits with a melting point lower than that of e, and increasing the recording density by making the bits uniform in size and reducing the rim portion, the Au content should be between 2 at.% and 47 at. % range.
また、この記録膜14の厚さは、1000オングストロ
ーム以上であると書込み感度が低下する。Furthermore, if the thickness of the recording film 14 is 1000 angstroms or more, the writing sensitivity will decrease.
そのため、1000オングストローム以下が好ましいが
、500オングストローム以下、さらに好ましくは10
0〜300オングストロームがよい。Therefore, it is preferably 1000 angstroms or less, but 500 angstroms or less, more preferably 10
A thickness of 0 to 300 angstroms is preferable.
これは、例えば第2図に示すように、パルス幅6On5
ecs線速度5. 5i /seeの条件下でPC基板
越しにレーザを入射した場合の書込み感度特性からも明
らかである。また、100オングストローム以下になる
と、記録膜が不連続になってピンホールが形成される確
率が増加するため好ましくない。このピンホールは、ヒ
ートモード記録の場合は、読出し時に本来のビットと間
違う恐れがある。さらに、記録膜酸化のトリガーともな
る。For example, as shown in FIG. 2, the pulse width is 6On5.
ecs linear velocity5. This is also clear from the writing sensitivity characteristics when the laser is incident through the PC board under the condition of 5i/see. Further, if the thickness is less than 100 angstroms, the recording film becomes discontinuous and the probability of pinhole formation increases, which is not preferable. In the case of heat mode recording, this pinhole may be mistaken for an original bit during reading. Furthermore, it also serves as a trigger for oxidation of the recording film.
次に、第1図に示した情報記録媒体18における再生レ
ーザパワーの許容度(記録膜に変質を起こすことなく再
生できるパワーレベル)について説明する。ビットに記
録した情報を読み出す再生レーザ光は、通常連続発振さ
せる。この状態において良好なS/N比で情報を読み出
すためには、再生レーザパワーも大きくする必要がある
が、ある閾値を越えるとピット(情報)を破壊し、再生
反射光のレベルが低下することがある。そこで線速55
m+/seeのトラックに連続的にホールドし、再生レ
ーザパワーを変化させて反射光レベルの変化をシンクロ
スコープで観察した。その観察結果を第3図に示す。Next, the tolerance of the reproduction laser power (the power level at which reproduction can be performed without causing deterioration of the recording film) of the information recording medium 18 shown in FIG. 1 will be explained. The reproduction laser light used to read information recorded in bits is normally continuously oscillated. In this state, in order to read information with a good S/N ratio, it is necessary to increase the reproduction laser power, but if it exceeds a certain threshold, the pits (information) will be destroyed and the level of the reproduction reflected light will decrease. There is. Therefore, the linear speed is 55
The track of m+/see was held continuously, the reproduction laser power was changed, and changes in the reflected light level were observed using a synchroscope. The observation results are shown in Figure 3.
この観察結果によれば、どの膜厚の記録膜においても、
0.6又は0.8mWのレーザパワーならば、3時間は
反射光のレベルが変化がなかった。According to these observation results, for any recording film thickness,
When the laser power was 0.6 or 0.8 mW, the level of reflected light did not change for 3 hours.
しかしながら、パワーを1mWにすると数時間で反射光
のレベルが低下した。この場合、膜厚の薄い方が低下の
程度が大きかった。反射光のレベルは、再生直後のもの
を1として規格化したものである。However, when the power was increased to 1 mW, the level of reflected light decreased within several hours. In this case, the smaller the film thickness, the greater the degree of decrease. The level of reflected light is normalized with the level immediately after reproduction set at 1.
現在標準化が進みつつある追記型記録膜の再生許容パワ
ーは、回転数180 Orpmで線速5.5■/see
の場合には、最大で0.5mWと決められている。許容
最大再生レーザパワーPmax (sW)は、Pma
x−0,2+0.055Vで与えられる。ここでVは記
録媒体の線速度(璽/5ee)である。またP■aXで
105サイクル連続的に再生しても反射光レベルに変化
がないことが要求されているが、これは回転数180
Orpm ・線速55m/seeの場合は少なくとも1
時間変化してはならないということである。従って、本
発明の情報記録媒体においては、該条件下で0.8mW
のパワーでも3時間まで変化が起こらないために、十分
にその要求を満たすことになる。The allowable playback power of the write-once recording film, which is currently being standardized, is a linear velocity of 5.5 ■/see at a rotational speed of 180 orpm.
In this case, the maximum power is determined to be 0.5 mW. The maximum allowable reproduction laser power Pmax (sW) is Pmax
It is given by x-0,2+0.055V. Here, V is the linear velocity (5ee) of the recording medium. In addition, it is required that the level of reflected light does not change even after 105 cycles of continuous playback with P■aX, which requires a rotation speed of 180.
Orpm ・At least 1 for linear speed 55m/see
This means that it should not change over time. Therefore, in the information recording medium of the present invention, 0.8 mW under these conditions
Since no change occurs even with the power of 3 hours, this requirement is fully met.
実施例1
第1図に示した情報記録媒体18を形成する方法につい
て説明する。Example 1 A method for forming the information recording medium 18 shown in FIG. 1 will be described.
第4図は、本発明の記録膜を形成するスパッタ装置の概
略図である。まず、このスパッタ装置のバルブ2をロー
タリーポンプ3側に開いてチェンバ1内を0.2Tor
rまで排気した。次いでバルブ2をクライオポンプ5側
に開いて1xlO−’Torr以下まで排気した。この
時ζ排気量は制御する必要がないので、コンダクタンス
バルブ4は全開しておいた。FIG. 4 is a schematic diagram of a sputtering apparatus for forming the recording film of the present invention. First, open the valve 2 of this sputtering device to the rotary pump 3 side and set the inside of the chamber 1 to 0.2 Torr.
Exhausted to r. Next, the valve 2 was opened to the cryopump 5 side, and the temperature was evacuated to below 1xlO-'Torr. Since there was no need to control the ζ displacement at this time, the conductance valve 4 was left fully open.
次にバルブ6を開けて、Arガスライン7からArガス
をマスフローコントローラ(図示せず)で調節しながら
、チェンバ1内にIOSCCM導入した。次いでチェン
バ1内の圧力をイオンゲージ(図示せず)でモニターし
ながら、コンダクタンスバルブ4で5 X 10−’T
orrに調整した。この圧力が変動しないことを確認し
てから、A u −Te合金ターゲット9(直径5イン
チ:組成はALl 12Te gs ;原子%)にDC
パワーサプライ10から100Wを印加し、シャッタ1
1を閉じたままスパッタ放電を5分間行なってスパッタ
クリーニングをした。Next, the valve 6 was opened, and IOSCCM was introduced into the chamber 1 while adjusting Ar gas from the Ar gas line 7 using a mass flow controller (not shown). Next, while monitoring the pressure inside the chamber 1 with an ion gauge (not shown), the conductance valve 4
Adjusted to orr. After confirming that this pressure does not fluctuate, DC
Apply 100W from power supply 10, shutter 1
1 was closed and sputter discharge was performed for 5 minutes to perform sputter cleaning.
A「ガスの供給とDCパワーの供給を停止した後、クラ
イオポンプ5を用いてチェンバ1内を一旦I X 10
−5Torr以下に排気した。その後バルブ6と17と
25を開けてチェンバ1内にArガスとCH4ガスとN
F、ガスを、Arガスライン7とCH4ガスライン8と
NF、ガスライン26を通してマスプローコントローラ
(図示せず)で調節しながら、それぞれ10.10及び
5SCCM導入した。次いでコンダクタンスバルブ4を
用いてチェンバ1内の圧力を5 X 10−3Torr
に制御した。圧力変動がないことを確認した後、AuT
eターゲット91.: D Cパワーサプライ10から
100Wを印加し、スパッタ放電させた。安定に放電し
ていることを確かめた後、シャッタ11を開けて、予め
回転子12にセットしておいたポリカーボネート(P
C)基板13上にAu Te合金並びに炭素及び水素を
含んだ記録膜14を積層した。回転子は60 rpmで
回転させた。膜厚が250オングストロームになったと
ころで、シャッタを閉じ、パワーの供給を停止した。次
いで、コンダクタンスバルブ4を全開し、クライオポン
プ5を用いてチェンバ1内をI X 10−’Torr
以下まで排気した。次いでバルブ15を開けて、N2ガ
スライン16からN2ガスをチェンバ1内に導入して大
気圧に戻した後、媒体18を取出すことにより、第1図
に示す情報記録媒体18を形成することができた。A: After stopping the gas supply and DC power supply, use the cryopump 5 to temporarily pump the inside of the chamber 1 to I
It was evacuated to -5 Torr or less. After that, open valves 6, 17, and 25 to fill chamber 1 with Ar gas, CH4 gas, and N gas.
F, gas was introduced at 10.10 and 5 SCCM through Ar gas line 7, CH4 gas line 8, and NF gas line 26 while being controlled by a mass blow controller (not shown), respectively. Then, using the conductance valve 4, the pressure inside the chamber 1 is reduced to 5 x 10-3 Torr.
was controlled. After confirming that there is no pressure fluctuation, the AuT
eTarget91. : 100 W was applied from the DC power supply 10 to cause sputter discharge. After confirming that the discharge is stable, open the shutter 11 and remove the polycarbonate (P) that was previously set on the rotor 12.
C) A recording film 14 containing an AuTe alloy and carbon and hydrogen was laminated on the substrate 13. The rotor was rotated at 60 rpm. When the film thickness reached 250 angstroms, the shutter was closed and power supply was stopped. Next, the conductance valve 4 is fully opened, and the inside of the chamber 1 is heated to I x 10-' Torr using the cryopump 5.
Exhausted to below. Next, the valve 15 is opened, N2 gas is introduced into the chamber 1 from the N2 gas line 16, the pressure is returned to atmospheric pressure, and the medium 18 is taken out, thereby forming the information recording medium 18 shown in FIG. did it.
このようにして形成された情報記録媒体18においては
、X線回折分析の結果、特定の回折角度からの回折ピー
クが認められない非晶質膜であることが確認された。非
晶質膜は、多結晶膜と違って結晶粒界がないため、再生
レーザ光が粒界部分で変調されて粒界ノイズを生ずるこ
とがない。As a result of X-ray diffraction analysis, it was confirmed that the information recording medium 18 thus formed was an amorphous film in which no diffraction peak was observed from a specific diffraction angle. Unlike a polycrystalline film, an amorphous film does not have grain boundaries, so that reproduction laser light is not modulated at the grain boundaries and does not generate grain boundary noise.
実施例2
実施例1に示した方法により製造された情報記録媒体1
8において、耐酸化性の指標となる酸化による表面のザ
ラツキの結果起こる読出しエラーの比率(エラーレート
)を分析した。75℃=90%の加速条件下に、実施例
1に示したのと同じ膜厚のTe膜及びTe−C膜、並び
に本発明の記録膜14を含有する情報記録媒体を一定時
間放置した後、書込みを行ないエラーレートを測定した
。その結果を第5図に示す。エラーレートは、加速条件
下に置く前の値を1として規格化した。Example 2 Information recording medium 1 manufactured by the method shown in Example 1
In No. 8, the ratio of read errors (error rate) occurring as a result of surface roughness due to oxidation, which is an index of oxidation resistance, was analyzed. After leaving the information recording medium containing the Te film and Te-C film of the same film thickness as shown in Example 1 and the recording film 14 of the present invention for a certain period of time under accelerated conditions of 75°C = 90%. , and measured the error rate. The results are shown in FIG. The error rate was normalized with the value before being placed under acceleration conditions as 1.
この図によれば、Te膜はわずか数日でエラーレートが
増加している。Te−C膜も100時間以後は徐々に増
加している。一方、本発明の記録膜14は、1000時
間放置してもほとんど変化がなかった。従って、高温高
湿下でも耐酸化性が良好で、長寿命であることが分る。According to this figure, the error rate of the Te film increases in just a few days. The Te-C film also gradually increases after 100 hours. On the other hand, the recording film 14 of the present invention showed almost no change even after being left for 1000 hours. Therefore, it can be seen that it has good oxidation resistance even under high temperature and high humidity conditions and has a long life.
尚、この記録膜14は、この測定後にX線回折分析をし
た時も非晶質膜であった。Note that this recording film 14 was also found to be an amorphous film when subjected to X-ray diffraction analysis after this measurement.
第6図は、パルス幅50 n5ec、書込み周波数37
MH2%波長830 nmのGa As系半導体レーザ
を用い、対物レンズの開口数(NA)0.52、線速5
.511/seeの条件下でのC/N(Carrler
/ N olse)比の大きさを示している。この結果
から、本発明の記録膜は、従来の記録膜よりもさらに高
感度になっていることが分る。Figure 6 shows a pulse width of 50 n5ec and a writing frequency of 37
Using a GaAs-based semiconductor laser with a MH2% wavelength of 830 nm, the numerical aperture (NA) of the objective lens was 0.52, and the linear velocity was 5.
.. C/N under the condition of 511/see (Carrler
/Nolse) ratio. This result shows that the recording film of the present invention has even higher sensitivity than the conventional recording film.
実施例3
第4図に示した装置において、CH4ガスの代わりにベ
ンゼンガスを用い、NF、ガスを用いない他は、実施例
1に示したものと全く同一の手順を踏んで成膜したとこ
ろ、第7図に示すように、基板113上にAu 、、T
B ss金合金CとHを含む記録膜114を250 積
層した情報記録媒体118が得ることができた。Example 3 A film was formed using the apparatus shown in FIG. 4 using the same procedure as in Example 1, except that benzene gas was used instead of CH4 gas and NF and gas were not used. , as shown in FIG.
An information recording medium 118 in which 250 recording films 114 containing Bss gold alloys C and H were laminated was obtained.
この記録膜の書込み感度特性、再生レーザパワーの許容
度、エラーレート及びC/N比を各々第2、第3、第5
及び第6図と同一の条件下で調べたところ、第8、第9
、第10及び第11図に示しものと同様の結果が得られ
た。The writing sensitivity characteristics, reproduction laser power tolerance, error rate, and C/N ratio of this recording film were determined in the second, third, and fifth tests, respectively.
And when examined under the same conditions as in Fig. 6, Nos. 8 and 9
, results similar to those shown in FIGS. 10 and 11 were obtained.
従って、Au Te合金をベンゼン環を有する炭化水素
ガスを含む雰囲気下でスパッタしても、良好な記録特性
を有する記録膜が得られることが分る。Therefore, it can be seen that even if the AuTe alloy is sputtered in an atmosphere containing a hydrocarbon gas having a benzene ring, a recording film having good recording properties can be obtained.
尚、本実施例においては、炭化水素ガス(メタン)とN
F ガスと希ガス(アルゴン)の混合雰囲気下でAu
Teターゲットをスパッタ放電したが、希ガスを含ま
ない雰囲気下で放電させてもよい。In this example, hydrocarbon gas (methane) and N
Au in a mixed atmosphere of F gas and rare gas (argon)
Although the Te target was sputter discharged, the discharge may be performed in an atmosphere that does not contain a rare gas.
さらに本実施例においては、透明な有機樹脂基板を用い
たが、書込み及び再生レーザ光を、基板を透過させない
で記録膜面側から入射させるときは、基板は不透明であ
ってもよい。Further, in this embodiment, a transparent organic resin substrate is used, but the substrate may be opaque when the writing and reproducing laser beams are made incident from the recording film side without passing through the substrate.
[発明の効果]
以上説明したように本発明によれば、高温高湿の環境下
でも優れた耐酸化性を示し、長寿命、高感度の記録膜を
有する情報記録媒体を提供できる。[Effects of the Invention] As described above, according to the present invention, it is possible to provide an information recording medium that exhibits excellent oxidation resistance even in a high temperature and high humidity environment, has a long life, and has a highly sensitive recording film.
第1図は本発明の一実施例の情報記録媒体の断面図、第
2図は記録膜の膜厚と書込み感度の関係を示す図、第3
図は再生時間と反射レベルの変化を示す図、第4図は第
1図に示す情報記録媒体を製造するためのスパッタ装置
を示す図、第5図は加速条件を経た記録膜のエラーレー
トを示す図、第6図は記録膜の記録感度を示す図、第7
図は本発明の他の実施例に係る情報記録媒体の断面図、
第8図は本発明の他の実施例に係る記録膜の膜厚と書込
み感度の関係を示す図、第9図は再生時間と反射レベル
の変化を示す図、第10図は加速条件を経た記録膜のエ
ラーレートを示す図、第11図は従来の記録膜と本発明
の他の実施例に係る記録膜の記録感度を示す図である。
13、 113 ・・・ 基板
14゜
記録膜
18゜
情報記録媒体FIG. 1 is a cross-sectional view of an information recording medium according to an embodiment of the present invention, FIG. 2 is a diagram showing the relationship between recording film thickness and writing sensitivity, and FIG.
The figure shows changes in playback time and reflection level, Figure 4 shows a sputtering apparatus for manufacturing the information recording medium shown in Figure 1, and Figure 5 shows the error rate of the recording film under acceleration conditions. Figure 6 is a diagram showing the recording sensitivity of the recording film, Figure 7 is a diagram showing the recording sensitivity of the recording film.
The figure is a sectional view of an information recording medium according to another embodiment of the present invention.
FIG. 8 is a diagram showing the relationship between recording film thickness and writing sensitivity according to another embodiment of the present invention, FIG. 9 is a diagram showing changes in playback time and reflection level, and FIG. 10 is a diagram showing changes in recording film thickness and writing sensitivity according to another embodiment of the present invention. FIG. 11 is a diagram showing the error rate of a recording film, and is a diagram showing the recording sensitivity of a conventional recording film and a recording film according to another embodiment of the present invention. 13, 113 ... Substrate 14° Recording film 18° Information recording medium
Claims (1)
録される、Au_xTe_1_0_0_−_x(2≦x
≦47原子%)合金並びに炭素、窒素、フッ素及び水素
を含む記録膜と、 を具備したことを特徴とする情報記録媒体。[Claims] A substrate; Au_xTe_1_0_0_-_x (2≦x
≦47 atomic %) alloy, and a recording film containing carbon, nitrogen, fluorine, and hydrogen.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63300684A JPH02147391A (en) | 1988-11-30 | 1988-11-30 | Information recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63300684A JPH02147391A (en) | 1988-11-30 | 1988-11-30 | Information recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02147391A true JPH02147391A (en) | 1990-06-06 |
Family
ID=17887829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63300684A Pending JPH02147391A (en) | 1988-11-30 | 1988-11-30 | Information recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02147391A (en) |
-
1988
- 1988-11-30 JP JP63300684A patent/JPH02147391A/en active Pending
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