JPH02166718A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPH02166718A JPH02166718A JP63322313A JP32231388A JPH02166718A JP H02166718 A JPH02166718 A JP H02166718A JP 63322313 A JP63322313 A JP 63322313A JP 32231388 A JP32231388 A JP 32231388A JP H02166718 A JPH02166718 A JP H02166718A
- Authority
- JP
- Japan
- Prior art keywords
- positive resist
- photoresist
- amine compound
- semiconductor substrate
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000007789 gas Substances 0.000 claims abstract description 22
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000059 patterning Methods 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 25
- -1 amine compound Chemical class 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000003504 photosensitizing agent Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 64
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 11
- KGWYICAEPBCRBL-UHFFFAOYSA-N 1h-indene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C=CC2=C1 KGWYICAEPBCRBL-UHFFFAOYSA-N 0.000 abstract description 9
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 abstract description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 5
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 abstract description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 abstract description 3
- 239000001569 carbon dioxide Substances 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 3
- 239000007864 aqueous solution Substances 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000003513 alkali Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229920005601 base polymer Polymers 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 230000008961 swelling Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- FHUGMWWUMCDXBC-UHFFFAOYSA-N gold platinum titanium Chemical compound [Ti][Pt][Au] FHUGMWWUMCDXBC-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63322313A JPH02166718A (ja) | 1988-12-21 | 1988-12-21 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63322313A JPH02166718A (ja) | 1988-12-21 | 1988-12-21 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02166718A true JPH02166718A (ja) | 1990-06-27 |
| JPH0529301B2 JPH0529301B2 (enrdf_load_stackoverflow) | 1993-04-30 |
Family
ID=18142234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63322313A Granted JPH02166718A (ja) | 1988-12-21 | 1988-12-21 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02166718A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7875419B2 (en) | 2002-10-29 | 2011-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for removing resist pattern and method for manufacturing semiconductor device |
| WO2024128279A1 (ja) * | 2022-12-15 | 2024-06-20 | 日産化学株式会社 | 光照射剥離用の剥離剤組成物、積層体、及び加工された半導体基板又は電子デバイス層の製造方法 |
-
1988
- 1988-12-21 JP JP63322313A patent/JPH02166718A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7875419B2 (en) | 2002-10-29 | 2011-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for removing resist pattern and method for manufacturing semiconductor device |
| WO2024128279A1 (ja) * | 2022-12-15 | 2024-06-20 | 日産化学株式会社 | 光照射剥離用の剥離剤組成物、積層体、及び加工された半導体基板又は電子デバイス層の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0529301B2 (enrdf_load_stackoverflow) | 1993-04-30 |
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Legal Events
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