JPH02166718A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPH02166718A
JPH02166718A JP63322313A JP32231388A JPH02166718A JP H02166718 A JPH02166718 A JP H02166718A JP 63322313 A JP63322313 A JP 63322313A JP 32231388 A JP32231388 A JP 32231388A JP H02166718 A JPH02166718 A JP H02166718A
Authority
JP
Japan
Prior art keywords
positive resist
amine compound
semiconductor substrate
photoresist
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63322313A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0529301B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Haraguchi
原口　浩志
Hitoshi Tsuji
均 辻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP63322313A priority Critical patent/JPH02166718A/ja
Publication of JPH02166718A publication Critical patent/JPH02166718A/ja
Publication of JPH0529301B2 publication Critical patent/JPH0529301B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP63322313A 1988-12-21 1988-12-21 半導体装置の製造方法 Granted JPH02166718A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63322313A JPH02166718A (ja) 1988-12-21 1988-12-21 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63322313A JPH02166718A (ja) 1988-12-21 1988-12-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH02166718A true JPH02166718A (ja) 1990-06-27
JPH0529301B2 JPH0529301B2 (enrdf_load_stackoverflow) 1993-04-30

Family

ID=18142234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63322313A Granted JPH02166718A (ja) 1988-12-21 1988-12-21 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH02166718A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7875419B2 (en) 2002-10-29 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Method for removing resist pattern and method for manufacturing semiconductor device
WO2024128279A1 (ja) * 2022-12-15 2024-06-20 日産化学株式会社 光照射剥離用の剥離剤組成物、積層体、及び加工された半導体基板又は電子デバイス層の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7875419B2 (en) 2002-10-29 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Method for removing resist pattern and method for manufacturing semiconductor device
WO2024128279A1 (ja) * 2022-12-15 2024-06-20 日産化学株式会社 光照射剥離用の剥離剤組成物、積層体、及び加工された半導体基板又は電子デバイス層の製造方法

Also Published As

Publication number Publication date
JPH0529301B2 (enrdf_load_stackoverflow) 1993-04-30

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