JPH0216508B2 - - Google Patents

Info

Publication number
JPH0216508B2
JPH0216508B2 JP56161430A JP16143081A JPH0216508B2 JP H0216508 B2 JPH0216508 B2 JP H0216508B2 JP 56161430 A JP56161430 A JP 56161430A JP 16143081 A JP16143081 A JP 16143081A JP H0216508 B2 JPH0216508 B2 JP H0216508B2
Authority
JP
Japan
Prior art keywords
resist
polymer
polyvinyl alcohol
solution
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56161430A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5862642A (ja
Inventor
Kyoshi Oguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP56161430A priority Critical patent/JPS5862642A/ja
Priority to EP19820109354 priority patent/EP0077057B2/en
Priority to DE8282109354T priority patent/DE3270659D1/de
Publication of JPS5862642A publication Critical patent/JPS5862642A/ja
Priority to US06/757,475 priority patent/US4649099A/en
Publication of JPH0216508B2 publication Critical patent/JPH0216508B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP56161430A 1981-10-09 1981-10-09 電子線感応ネガ型レジスト Granted JPS5862642A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56161430A JPS5862642A (ja) 1981-10-09 1981-10-09 電子線感応ネガ型レジスト
EP19820109354 EP0077057B2 (en) 1981-10-09 1982-10-08 Negative-type resist sensitive to ionizing radiation
DE8282109354T DE3270659D1 (en) 1981-10-09 1982-10-08 Negative-type resist sensitive to ionizing radiation
US06/757,475 US4649099A (en) 1981-10-09 1985-07-22 Negative-type resist sensitive to ionizing radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56161430A JPS5862642A (ja) 1981-10-09 1981-10-09 電子線感応ネガ型レジスト

Publications (2)

Publication Number Publication Date
JPS5862642A JPS5862642A (ja) 1983-04-14
JPH0216508B2 true JPH0216508B2 (en, 2012) 1990-04-17

Family

ID=15734954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56161430A Granted JPS5862642A (ja) 1981-10-09 1981-10-09 電子線感応ネガ型レジスト

Country Status (2)

Country Link
US (1) US4649099A (en, 2012)
JP (1) JPS5862642A (en, 2012)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2517541B2 (ja) * 1984-02-23 1996-07-24 大日本印刷株式会社 電離放射線感応ネガ型レジスト
JPS62195662A (ja) * 1986-02-24 1987-08-28 Seiko Instr & Electronics Ltd マスクリペア方法及び装置
KR930000293B1 (ko) * 1987-10-26 1993-01-15 마쯔시다덴기산교 가부시기가이샤 미세패턴형성방법
US5213917A (en) * 1989-05-18 1993-05-25 Shipley Company Inc. Plasma processing with metal mask integration
US6207546B1 (en) * 1998-08-28 2001-03-27 Taiwan Semiconductor Manufacturing Company Prevent passivation from keyhole damage and resist extrusion by a crosslinking mechanism
US6350560B1 (en) * 2000-08-07 2002-02-26 Shipley Company, L.L.C. Rinse composition

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL174231B (nl) * 1952-11-29 Du Pont Werkwijze voor het elektrostatisch vastpennen van een thermoplastische polymeerfilm en een inrichting voor het uitvoeren van deze werkwijze.
JPS50101445A (en, 2012) * 1974-01-10 1975-08-12
JPS5222598A (en) * 1975-08-14 1977-02-19 Mitsubishi Electric Corp Etching method of chromium oxide
JPS539896A (en) * 1976-07-14 1978-01-28 Fuji Photo Film Co Ltd Photo-crosslinkable, photo-setting resins
JPS54227A (en) * 1977-06-02 1979-01-05 Takemura Seisakushiyo Kk Back flow valve
DE3270659D1 (en) * 1981-10-09 1986-05-22 Dainippon Printing Co Ltd Negative-type resist sensitive to ionizing radiation

Also Published As

Publication number Publication date
US4649099A (en) 1987-03-10
JPS5862642A (ja) 1983-04-14

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