JPH02159730A - Formation of thin film transistor - Google Patents

Formation of thin film transistor

Info

Publication number
JPH02159730A
JPH02159730A JP31565488A JP31565488A JPH02159730A JP H02159730 A JPH02159730 A JP H02159730A JP 31565488 A JP31565488 A JP 31565488A JP 31565488 A JP31565488 A JP 31565488A JP H02159730 A JPH02159730 A JP H02159730A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
concentration impurity
insulating film
regions
impurity regions
mask layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP31565488A
Other versions
JP2934445B2 (en )
Inventor
Yoshihiro Hashimoto
Hisao Hayashi
Akeshi Kawamura
Kazuyoshi Yoshida
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile

Abstract

PURPOSE: To prevent any impurity from diffusing from an interlayer insulating film to low concentration impurity regions by a method wherein the title formation process is composed of a process to form a mask layer, another process to implant ions for forming a high concentration impurity regions using the mask layer as a mask and the other process to form an interlayer insulating film on the whole surface.
CONSTITUTION: A mask layer 6 covering adjacent regions 6 to a gate electrode layer 4 is formed and then ions are implanted to form high concentration impurity regions 8 using the mask layer 6 as a mask. Then, the high concentration impurity regions 8 to be source.drain regions are formed on the parts excluding the part immediately below the gate electrode layer 4 and the adjacent regions 7. Next, the mask layer 6 is removed and then a PSG film 9 as an interlayer insulating film is formed on the whole surface. A gate insulating film 3 is formed on the low concentration impurity regions 5 in the adjacent regions 7 so that the PSG film 9 may not come into direct contact with the low concentration impurity regions 5. Through these procedures, the gate insulating film 3 can remain to the last so that the impurity may be prevented from diffusing from the interlayer insulating film 9 to the source.drain low concentration impurity regions.
COPYRIGHT: (C)1990,JPO&Japio
JP31565488A 1988-12-14 1988-12-14 A method of forming a thin film transistor Expired - Lifetime JP2934445B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31565488A JP2934445B2 (en) 1988-12-14 1988-12-14 A method of forming a thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31565488A JP2934445B2 (en) 1988-12-14 1988-12-14 A method of forming a thin film transistor

Publications (2)

Publication Number Publication Date
JPH02159730A true true JPH02159730A (en) 1990-06-19
JP2934445B2 JP2934445B2 (en) 1999-08-16

Family

ID=18067973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31565488A Expired - Lifetime JP2934445B2 (en) 1988-12-14 1988-12-14 A method of forming a thin film transistor

Country Status (1)

Country Link
JP (1) JP2934445B2 (en)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555573A (en) * 1991-08-26 1993-03-05 Sharp Corp Thin film transistor and manufacture thereof
JPH05343430A (en) * 1991-08-23 1993-12-24 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacutre of the same
JPH07106594A (en) * 1993-10-01 1995-04-21 Semiconductor Energy Lab Co Ltd Semiconductor device and its forming method
JPH07153971A (en) * 1993-10-01 1995-06-16 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
JPH07169975A (en) * 1993-09-20 1995-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
JPH07169974A (en) * 1993-09-20 1995-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
JPH07202213A (en) * 1994-01-08 1995-08-04 Semiconductor Energy Lab Co Ltd Manufacture for semiconductor integrated circuit
US5879969A (en) * 1991-03-06 1999-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5917225A (en) * 1992-03-05 1999-06-29 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor having specific dielectric structures
US5962870A (en) * 1991-08-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices
US6049092A (en) * 1993-09-20 2000-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6335555B1 (en) 1993-10-01 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a manufacturing method for the same
US6337231B1 (en) 1993-05-26 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6475839B2 (en) 1993-11-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing of TFT device by backside laser irradiation
US6489632B1 (en) 1993-01-18 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a gate oxide film
US6635900B1 (en) 1995-06-01 2003-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film having a single-crystal like region with no grain boundary
US6777763B1 (en) 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
JP2005093874A (en) * 2003-09-19 2005-04-07 Seiko Epson Corp Semiconductor device and method of manufacturing semiconductor device
US7087962B1 (en) 1991-12-24 2006-08-08 Semiconductor Energy Laboratory Co., Ltd. Method for forming a MOS transistor having lightly dopped drain regions and structure thereof
US7227229B2 (en) 1994-02-08 2007-06-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device comprising an inverter circuit
JP2010098321A (en) * 1993-09-20 2010-04-30 Semiconductor Energy Lab Co Ltd Semiconductor device
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US8946717B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9366930B2 (en) 2002-05-17 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device with capacitor elements

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0298143A (en) * 1988-10-04 1990-04-10 Fuji Xerox Co Ltd Manufacture of ldd structure polysilicon thin film transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0298143A (en) * 1988-10-04 1990-04-10 Fuji Xerox Co Ltd Manufacture of ldd structure polysilicon thin film transistor

Cited By (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5879969A (en) * 1991-03-06 1999-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH05343430A (en) * 1991-08-23 1993-12-24 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacutre of the same
US6331723B1 (en) 1991-08-26 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device having at least two transistors having LDD region in one pixel
JPH0555573A (en) * 1991-08-26 1993-03-05 Sharp Corp Thin film transistor and manufacture thereof
US5962870A (en) * 1991-08-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices
US7087962B1 (en) 1991-12-24 2006-08-08 Semiconductor Energy Laboratory Co., Ltd. Method for forming a MOS transistor having lightly dopped drain regions and structure thereof
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6476447B1 (en) 1992-02-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device including a transistor
US5917225A (en) * 1992-03-05 1999-06-29 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor having specific dielectric structures
US6995432B2 (en) 1993-01-18 2006-02-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a gate oxide film with some NTFTS with LDD regions and no PTFTS with LDD regions
US7408233B2 (en) 1993-01-18 2008-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having N-channel thin film transistor with LDD regions and P-channel thin film transistor with LDD region
US6489632B1 (en) 1993-01-18 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a gate oxide film
US6337231B1 (en) 1993-05-26 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JPH07169975A (en) * 1993-09-20 1995-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
JP2011035430A (en) * 1993-09-20 2011-02-17 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device
JP4675433B2 (en) * 1993-09-20 2011-04-20 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
JP4657361B2 (en) * 1993-09-20 2011-03-23 株式会社半導体エネルギー研究所 Semiconductor device
JPH07169974A (en) * 1993-09-20 1995-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
US6049092A (en) * 1993-09-20 2000-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2010098321A (en) * 1993-09-20 2010-04-30 Semiconductor Energy Lab Co Ltd Semiconductor device
US6335555B1 (en) 1993-10-01 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a manufacturing method for the same
JPH07153971A (en) * 1993-10-01 1995-06-16 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
US6259120B1 (en) 1993-10-01 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US7170138B2 (en) 1993-10-01 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6777763B1 (en) 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US6835607B2 (en) 1993-10-01 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for manufacturing the same
US7301209B2 (en) 1993-10-01 2007-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPH07106594A (en) * 1993-10-01 1995-04-21 Semiconductor Energy Lab Co Ltd Semiconductor device and its forming method
US5962872A (en) * 1993-10-01 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US7166503B2 (en) 1993-10-01 2007-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a TFT with laser irradiation
US6617612B2 (en) * 1993-11-05 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a semiconductor integrated circuit
US6475839B2 (en) 1993-11-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing of TFT device by backside laser irradiation
US5904509A (en) * 1994-01-08 1999-05-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using anodic oxidation
JPH07202213A (en) * 1994-01-08 1995-08-04 Semiconductor Energy Lab Co Ltd Manufacture for semiconductor integrated circuit
US6391694B1 (en) * 1994-01-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor integrated circuit
US7227229B2 (en) 1994-02-08 2007-06-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device comprising an inverter circuit
US6635900B1 (en) 1995-06-01 2003-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film having a single-crystal like region with no grain boundary
US10083995B2 (en) 2002-04-09 2018-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US8946717B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8946718B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9406806B2 (en) 2002-04-09 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9666614B2 (en) 2002-04-09 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10050065B2 (en) 2002-04-09 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9105727B2 (en) 2002-04-09 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9366930B2 (en) 2002-05-17 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device with capacitor elements
JP2005093874A (en) * 2003-09-19 2005-04-07 Seiko Epson Corp Semiconductor device and method of manufacturing semiconductor device

Also Published As

Publication number Publication date Type
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