JPH02125328U - - Google Patents
Info
- Publication number
- JPH02125328U JPH02125328U JP3337289U JP3337289U JPH02125328U JP H02125328 U JPH02125328 U JP H02125328U JP 3337289 U JP3337289 U JP 3337289U JP 3337289 U JP3337289 U JP 3337289U JP H02125328 U JPH02125328 U JP H02125328U
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- control mechanism
- chemical vapor
- vapor phase
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012495 reaction gas Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 5
- 239000012808 vapor phase Substances 0.000 claims 5
- 239000010408 film Substances 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3337289U JPH02125328U (ko) | 1989-03-23 | 1989-03-23 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3337289U JPH02125328U (ko) | 1989-03-23 | 1989-03-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02125328U true JPH02125328U (ko) | 1990-10-16 |
Family
ID=31536975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3337289U Pending JPH02125328U (ko) | 1989-03-23 | 1989-03-23 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02125328U (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011003744A (ja) * | 2009-06-18 | 2011-01-06 | Denso Corp | 表面処理装置 |
-
1989
- 1989-03-23 JP JP3337289U patent/JPH02125328U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011003744A (ja) * | 2009-06-18 | 2011-01-06 | Denso Corp | 表面処理装置 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Ehsasi et al. | Steady and nonsteady rates of reaction in a heterogeneously catalyzed reaction: Oxidation of CO on platinum, experiments and simulations | |
US6645574B1 (en) | Method of forming a thin film | |
EP0552375A4 (en) | Chemical vapor deposition apparatus, method of semiconductor film formation, and method of producing thin film semiconductor device | |
JP2001220677A (ja) | 薄膜製造方法及び薄膜製造装置 | |
JPS5578524A (en) | Manufacture of semiconductor device | |
JPH02125328U (ko) | ||
JP2005510081A5 (ko) | ||
JPS5898138A (ja) | 減圧cvd装置 | |
JPS5694751A (en) | Vapor growth method | |
JP3303357B2 (ja) | 気相化学反応装置 | |
JPS5713746A (en) | Vapor-phase growing apparatus | |
JPS5817263B2 (ja) | 液体ソ−スのガス化方法 | |
JPS5940906B2 (ja) | プラズマ放電を利用した気相化学反応物質析出装置 | |
JP2001358137A (ja) | 半導体装置の製造方法及びその半導体製造装置 | |
KR100237921B1 (ko) | 화학증기 증착장치 및 그 증착속도 제어방어방법 | |
JPS59142621A (ja) | 真空装置の圧力調整方法 | |
JPH0281033U (ko) | ||
JPS5493357A (en) | Growing method of polycrystal silicon | |
JPS6430358U (ko) | ||
JPH0339832U (ko) | ||
JPH0375295A (ja) | 有機金属材料用バブラ | |
JPS62151562A (ja) | 薄膜形成装置 | |
JPS62243319A (ja) | 減圧式気相成長装置 | |
JPH0275723U (ko) | ||
JPH03205817A (ja) | 半導体製造装置 |