JPH02121132A - Information recording medium - Google Patents

Information recording medium

Info

Publication number
JPH02121132A
JPH02121132A JP63272041A JP27204188A JPH02121132A JP H02121132 A JPH02121132 A JP H02121132A JP 63272041 A JP63272041 A JP 63272041A JP 27204188 A JP27204188 A JP 27204188A JP H02121132 A JPH02121132 A JP H02121132A
Authority
JP
Japan
Prior art keywords
film
substrate
flow rate
recording medium
recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63272041A
Other languages
Japanese (ja)
Inventor
Hideki Okawa
秀樹 大川
Norio Ozawa
小沢 則雄
Motonari Matsubara
松原 基成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP63272041A priority Critical patent/JPH02121132A/en
Publication of JPH02121132A publication Critical patent/JPH02121132A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve oxidation resistance without lowering the optical absorptivity of the recording medium by forming an AgTe-C film at a specified flow rate ratio. CONSTITUTION:This recording medium has a substrate 13 and a recording film 14 in an amorphous state which contains the AgxTe100-x(2<=x<=50atom%) alloy formed of an AgTe alloy at <={5<=Q<=50%} flow rate ratio Q={X/X+Y}X100% in an atmosphere mixture composed of gaseous hydrocarbon of a flow rate X and a rare gas of a flow rate Y as well as carbon and hydrogen and in which the carbon content of the part in contact with the substrate 13 is higher than the carbon content in the film. The degradation of the optical absorptivity is obviated in this way and the degree of a change in the reflectivity under high humidity is small. In addition, the life is long and the carbon content in the part in contact with the substrate is larger than in the inside and, therefore, the oxidation of the boundary between the substrate and the recording film is obviated.

Description

【発明の詳細な説明】 [発明の、目的コ (産業上の利用分野) 本発明は、例えばレーザ光の照射により記録膜成分を凝
集させて情報を書込み、該成分の凝集によるレーザ光の
振幅の変化を通じて該情報の読み出しを行う情報記録媒
体に関する。
Detailed Description of the Invention [Purpose of the Invention (Industrial Application Field) The present invention is directed to writing information by agglomerating recording film components by, for example, irradiation with a laser beam, and reducing the amplitude of the laser beam due to the aggregation of the components. The present invention relates to an information recording medium from which information is read through changes in information.

(従来の技術) レーザ光の照射により情報が記録され、さらに、記録さ
れた情報の再生がなされる情報記録媒体の一種として、
Teを主成分とする記録膜を具備したものが開発されて
いる。さらに、このTeを主成分とする記録膜に炭素並
びに水素を含んだ記録膜が開発され、実用化に至ってい
る(特開昭58−9234号公報参照)。
(Prior Art) As a type of information recording medium, information is recorded by irradiation with laser light and the recorded information is reproduced.
A device equipped with a recording film containing Te as a main component has been developed. Furthermore, a recording film containing carbon and hydrogen in addition to the Te-based recording film has been developed and put into practical use (see Japanese Patent Laid-Open No. 58-9234).

この記録膜を作成する際には、テルル(Te)を炭化水
素ガスを含む雰囲気中でスパッタする。
When creating this recording film, tellurium (Te) is sputtered in an atmosphere containing hydrocarbon gas.

すると、Te単体の膜(Te膜)よりも高感度でかつ耐
酸化性能にすぐれた記録膜(以下Te−C膜と称す)が
得られる。この記録膜は、アモルファス膜であり、T 
e s C及びHを含み、また少なくともCとHは化学
結合をしていることが分っている。
As a result, a recording film (hereinafter referred to as a Te-C film) having higher sensitivity and superior oxidation resistance than a film containing only Te (Te film) is obtained. This recording film is an amorphous film, and T
It is known that it contains C and H, and that at least C and H form a chemical bond.

この他、さらに、AgTe合金を炭化水素と希ガスを含
む雰囲気下でスパッタして得られるAgTe、C及びH
を含む膜(以下AgTe−C膜と称す)が、高温高湿下
でも寿命が長い記録膜として開発された。
In addition, AgTe, C and H obtained by sputtering an AgTe alloy in an atmosphere containing hydrocarbons and a rare gas
(hereinafter referred to as AgTe-C film) has been developed as a recording film that has a long life even under high temperature and high humidity conditions.

(発明が解決しようとする課題) しかし、AgTe−C膜は、炭素と水素による耐酸化性
性能を増加させるため、炭化水素ガスの流量をX1希ガ
スの流量をYとした場合の流量比Q (Q−(X/ (
X+Y)}×100%)を大きくすると、膜の透過率が
増大して、光学的吸収率A (A−1−R−T、Rは反
射率、Tは透過率)が減少するため、記録時のレーザパ
ワーを大きくしなければならない。また記録膜中にCと
Hを含み耐酸化性に優れていても、例えば有機樹脂基板
と接する部分は酸化(界面酸化)が避けられないという
問題があった。
(Problem to be solved by the invention) However, in order to increase the oxidation resistance performance of the AgTe-C film due to carbon and hydrogen, the flow rate ratio Q where the flow rate of hydrocarbon gas is X1 and the flow rate of rare gas is Y (Q-(X/ (
When X+Y)}×100%) is increased, the transmittance of the film increases and the optical absorption rate A (A-1-R-T, where R is reflectance and T is transmittance) decreases. The laser power must be increased. Furthermore, even if the recording film contains C and H and has excellent oxidation resistance, there is a problem in that oxidation (interfacial oxidation) cannot be avoided, for example, at the portion in contact with the organic resin substrate.

そこで、本発明は、光学的吸収率を低下させることなく
、耐酸化性を向上させたAgTe合金、C及びHを含む
記録膜を有する情報記録媒体を提供することを目的とす
る。
Therefore, an object of the present invention is to provide an information recording medium having a recording film containing an AgTe alloy, C, and H, which has improved oxidation resistance without reducing optical absorption.

[発明の構成] (課題を解決するための手段) 本発明は上記目的を達成するために、基板と、この基板
上にAgTe合金を流量Xの炭化水素ガスと流量Yの希
ガスの混合雰囲気中で流量比Q−(X/ (X+Y))
 x100%が5≦Q≦50%下で形成されたAgx 
’reloO−1(2≦x≦50原子%)合金並びに炭
素及び水素を含み、前記基板と接する部分の炭素量が膜
内部の炭素量より多い非晶質状態の記録膜とを具備した
ことを特徴とする情報記録媒体を提供する。
[Structure of the Invention] (Means for Solving the Problem) In order to achieve the above object, the present invention provides a substrate and an AgTe alloy on the substrate in a mixed atmosphere of a hydrocarbon gas at a flow rate of X and a rare gas at a flow rate of Y. Inside, the flow rate ratio Q-(X/ (X+Y))
Agx formed under x100% 5≦Q≦50%
'reloO-1 (2≦x≦50 atomic %) alloy and an amorphous recording film containing carbon and hydrogen, in which the amount of carbon in the portion in contact with the substrate is greater than the amount of carbon inside the film. Provides an information recording medium with characteristics.

(作用) 本発明のAgTe−C膜は、流量比Qを5≦Q≦50%
下で成膜するため、C及びHが多すぎて光学的吸収率が
低下するということはない。
(Function) The AgTe-C film of the present invention has a flow rate ratio Q of 5≦Q≦50%.
Since the film is formed below, the optical absorption rate does not decrease due to too much C and H.

また上記Q値の範囲内ならば、CとHを含まないAgT
e合金単体の膜よりも高湿度下における反射率変化の度
合が小さく、長寿命である。
Also, if it is within the above Q value range, AgT that does not contain C and H
The degree of change in reflectance under high humidity is smaller than that of a single e-alloy film, and it has a longer life.

さらに、本発明の記録膜は、基板と接する部分の炭素量
が内部より多いため、基板/記録膜界面の酸化が生じな
い。
Furthermore, since the recording film of the present invention has a higher carbon content in the portion in contact with the substrate than in the interior, oxidation does not occur at the substrate/recording film interface.

(実施例) 以下、本発明の一実施例を図面を参照して説明する。(Example) Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第1図は、本発明の情報記録媒体の構造を概略的に示し
た断面図である。本発明の情報記録媒体は、基板13及
びこの基板13上に積層された記録膜14により構成さ
れるものである。
FIG. 1 is a cross-sectional view schematically showing the structure of the information recording medium of the present invention. The information recording medium of the present invention is composed of a substrate 13 and a recording film 14 laminated on the substrate 13.

基板13は、情報の記録及び再生のために情報記録媒体
上に照射されるレーザ光に対して透明な材質のものが用
いられる。例えば、近赤外近傍の発振波長を有するレー
ザ光を用いる場合は、ポリカーボネート(PC)、ポリ
メチルメタクリレ−) (PMMA) 、ガラス、ポリ
オレフィン並びにエポキシ樹脂等が用いられる。
The substrate 13 is made of a material that is transparent to laser light that is irradiated onto the information recording medium for recording and reproducing information. For example, when using a laser beam having an oscillation wavelength near infrared, polycarbonate (PC), polymethyl methacrylate (PMMA), glass, polyolefin, epoxy resin, etc. are used.

また、記録膜14は、Ag−Te合金に炭素並びに水素
を含ませているものである。
The recording film 14 is made of an Ag-Te alloy containing carbon and hydrogen.

C−Hマトリクス中で分散しているクラスタ成分に凝集
時と分散時とで反射率に差が認められれば、例えばクラ
スタの分散を情報の無に、凝集を有に対応させて、情報
の記録ができる。クラスタの凝集はレーザ照射による発
熱で生じさせることができる。Teは単体では、凝集時
と分散時の反射率の差はそれほど大きくない。しかし、
これと合金を形成し得る成分を加えた場合に差が認めら
れてくることがある。本発明では、Agを2〜50原子
%加えた場合にこの効果が顕著であることを見出した。
If there is a difference in the reflectance of the cluster components dispersed in the C-H matrix between aggregation and dispersion, it is possible to record information by, for example, making cluster dispersion correspond to no information and aggregation to presence. Can be done. Aggregation of clusters can be caused by heat generation due to laser irradiation. When Te is used as a single substance, the difference in reflectance between aggregation and dispersion is not so large. but,
Differences may be observed when a component that can form an alloy with this is added. In the present invention, it has been found that this effect is significant when 2 to 50 atomic % of Ag is added.

本発明による情報記録媒体は、情報の記録が相変化の前
後における反射率の差を利用して行なうが、記録の前後
における反射率の差は、一般に記録膜の膜厚が干渉によ
る極値を与えるものの近傍にある場合に大きくなり、好
都合である。従って、本発明による記録膜の膜厚は、干
渉効果が膜厚の増加とともに小さくなりある一定の反射
率に収束すること、及び記録時のレーザパワーが膜厚の
増加とともに増加することを考慮して、5000Å以下
とする。
In the information recording medium according to the present invention, information is recorded using the difference in reflectance before and after the phase change, but the difference in reflectance before and after recording is generally caused by the thickness of the recording film being at an extreme value due to interference. It becomes large when it is near the object to be given, which is convenient. Therefore, the thickness of the recording film according to the present invention is determined by considering that the interference effect decreases as the film thickness increases and converges to a certain reflectance, and that the laser power during recording increases as the film thickness increases. The thickness should be 5000 Å or less.

実施例1 第1図に示した情報記録媒体を形成する方法について説
明する。
Example 1 A method for forming the information recording medium shown in FIG. 1 will be described.

第2図は、本発明の記録膜を形成するスパッタ装置の概
略図である。まず、このスパッタ装置のバルブ2をロー
タリ、−ポンプ3側に開いてチェンバ1内を0.2To
rrまで排気した。次いでバルブ2をクライオポンプ5
側に開いてlXl0−5T Orr以下まで排気した。
FIG. 2 is a schematic diagram of a sputtering apparatus for forming the recording film of the present invention. First, the valve 2 of this sputtering device is opened to the rotary pump 3 side, and the inside of the chamber 1 is heated to 0.2To.
Exhausted to rr. Then valve 2 is connected to cryopump 5.
It was opened to the side and evacuated to below 1X10-5T Orr.

この時、排気量は制御する必要がないので、コンダクタ
ンスバルブ4は全開しておいた。
At this time, since there was no need to control the displacement, the conductance valve 4 was left fully open.

次にバルブ6を開けて、Arガスライン7からArガス
をマスフローコントローラ(図示せず)で調節しながら
、チェンバ1内にIO5CCM導入した。次いでチェン
バ1内の圧力をイオンゲージ(図示せず)でモニターし
ながら、コンダクタンスバルブ4で5 X 10−3T
orrに調整した。
Next, the valve 6 was opened, and IO5CCM was introduced into the chamber 1 while adjusting Ar gas from the Ar gas line 7 using a mass flow controller (not shown). Next, while monitoring the pressure inside the chamber 1 with an ion gauge (not shown), the conductance valve 4
Adjusted to orr.

この圧力が変動しないことを確認してから、Ag−Te
合金ターゲット9(直径5インチ:組成はA g aq
T e <5 ; at%)にDCパワーサプライ10
から100Wを印加し、シャッタ11を閉じたままスパ
ッタ放電を5分間行ってスパッタクリーニングをした。
After confirming that this pressure does not fluctuate,
Alloy target 9 (5 inches in diameter: composition is A g aq
DC power supply 10 to T e <5; at%)
100 W was applied from 100 W to 100 W, and sputter discharge was performed for 5 minutes with the shutter 11 closed to perform sputter cleaning.

A「ガスの供給とDCパワーの供給を停止した後、クラ
イオポンプ5を用いてチェンバ1内を一旦I X 10
’ Torr以下に排気した。その後バルブ6と17を
開けてチェンバ1内にArとCH4ガスを、Arガスラ
イン7とCH4ガスライン8を通してマスフローコント
ローラ(図示せず)で調節しながら、それぞれ5SCC
Mと1105CC導入した。次いでコンダクタンスバル
ブ4を用いてチェンバ1内の圧力を5 X 10−3T
 orrに制御した。圧力変動がないことを確認した後
、AgTeターゲット9にDCパワーサプライ10から
100Wを印加し、スパッタ放電させた。安定に放電し
ていることを確めた後、シャッタ11を開けて、予め回
転子12にセットしておいたポリカーボネート(P C
)基板13上にAgTe合金並びに炭素及び水素を含ん
だ記録膜14を積層した。回転子は60 rpllで回
転させた。
A: After stopping the gas supply and DC power supply, use the cryopump 5 to temporarily pump the inside of the chamber 1 to I
' Exhaust to below Torr. Thereafter, valves 6 and 17 are opened, and Ar and CH4 gases are introduced into chamber 1 through Ar gas line 7 and CH4 gas line 8 while being controlled by a mass flow controller (not shown) at 5SCC each.
M and 1105CC were introduced. Then, using the conductance valve 4, the pressure inside the chamber 1 is reduced to 5 x 10-3T.
It was controlled to orr. After confirming that there was no pressure fluctuation, 100 W was applied to the AgTe target 9 from the DC power supply 10 to cause sputter discharge. After confirming that the discharge is stable, open the shutter 11 and remove the polycarbonate (PC) that was previously set on the rotor 12.
) A recording film 14 containing an AgTe alloy and carbon and hydrogen was laminated on the substrate 13. The rotor was rotated at 60 rpll.

次に一度放電を中止してガスを排気した後、今度はCH
4とArガスをそれぞれIO8CCMづつ導入した。1
分間5×1O−3Torrの圧力を維持していることを
確認した後、放電させた。膜厚が1000人に達したと
ころで、シャッタを閉じ、パワーの供給を停止した。
Next, once the discharge is stopped and the gas is exhausted, the CH
4 and Ar gas were introduced in an amount of IO8CCM each. 1
After confirming that the pressure was maintained at 5×1 O −3 Torr for minutes, discharge was performed. When the film thickness reached 1,000 people, the shutter was closed and the power supply was stopped.

次いでコンダクタンスバルブ4を全開し、クライオポン
プ5を用いてチェンバ1内をlXl0−5T orr以
下まで排気した。次いでバルブ15を開けて、N2ガス
ライン16からN2ガスをチェンバ1内に導入して大気
圧に戻した後、媒体18を取り出すことにより、第1図
に示す情報記録媒体が形成された。
Next, the conductance valve 4 was fully opened, and the inside of the chamber 1 was evacuated to below 1X10-5 Torr using the cryopump 5. Next, the valve 15 was opened, N2 gas was introduced into the chamber 1 from the N2 gas line 16, the pressure was returned to atmospheric pressure, and the medium 18 was taken out, thereby forming the information recording medium shown in FIG. 1.

このようにして得られた記録膜14は、X線回折分析の
結果、特定の回折角度からの回折ピークが認められない
アモルファス膜であることが確認された。アモルファス
膜は、多結晶膜と違って結晶粒界がないため、再生レー
ザ光が粒界部分で変調されて粒界ノイズを生ずることが
ない。
As a result of X-ray diffraction analysis, it was confirmed that the recording film 14 thus obtained was an amorphous film in which no diffraction peak was observed from a specific diffraction angle. Unlike a polycrystalline film, an amorphous film does not have grain boundaries, so that reproduction laser light is not modulated at the grain boundaries and does not generate grain boundary noise.

上記の方法により得られたA g 33T e 67、
C及びHを含む記録膜は、膜厚が1000人のとき、第
3図に示すように、多重干渉効果により反射率が極小値
となるため、この膜厚でアモルファス(分散状態)から
結晶状態(凝集状態)に相変化させると、反射率の増加
を顕著に認めることができ、情報記録が行われたことが
分る。
A g 33T e 67 obtained by the above method,
When the film thickness of a recording film containing C and H is 1000, as shown in Figure 3, the reflectance reaches a minimum value due to the multiple interference effect, so the film changes from amorphous (dispersed state) to crystalline state at this film thickness. When the phase changes to (agglomerated state), a significant increase in reflectance can be observed, indicating that information has been recorded.

ところで上記実施例においては、スパッタ放電の最終時
にメタンガスの流量を増加させて流量比Qを高くしたが
、通常炭化水素ガスと希ガスの混合雰囲気中でスパッタ
する場合は、チェンバ内で生成する炭素の量は、炭化水
素ガスの流量を増加させなくても、放電の最終時に放電
初期より多くなることを利用してもよい。
By the way, in the above embodiment, the flow rate of methane gas was increased at the final stage of sputtering discharge to increase the flow rate ratio Q. However, when sputtering is normally performed in a mixed atmosphere of hydrocarbon gas and rare gas, the carbon generated in the chamber It may also be possible to utilize the fact that the amount of gas becomes larger at the end of the discharge than at the beginning of the discharge without increasing the flow rate of the hydrocarbon gas.

実施例2 実施例1に示した方法により、A g 33T e 6
7、C及びHを含む記録膜を250人、PC基板上に成
膜し、回転数1800rpi、記録周波数3.7M H
z 、記録パルス幅5 n5ecの条件下で、線速度5
 、 5 m / seeに相当する箇所において7m
Wのレーザパワーで書込んだところ、30dBの良好な
C/ N (Carricr/ N oise)比を得
た。
Example 2 By the method shown in Example 1, A g 33T e 6
7. A recording film containing C and H was formed on a PC board by 250 people at a rotation speed of 1800 rpi and a recording frequency of 3.7 MH.
z, recording pulse width 5 n5ec, linear velocity 5
, 7 m at points corresponding to 5 m/see
When writing with a laser power of W, a good C/N (Carrier/Noise) ratio of 30 dB was obtained.

本発明による上記膜厚250人の記録膜は、書込みレー
ザパワーが10mW以上になると、クラスタ成分の凝集
だけでなく、ビットも形成され、情報の読み出し時に混
乱を生じる。そこでビットの形成を防止するため、第4
図に示すように、基板13上に成膜された記録膜14上
に膜厚300〜1000人の誘電体膜20を積層した情
報記録媒体21を得ることができる。誘電体膜としては
、S t02 、S [OSA、1’SS LNなどを
用いることができる。誘電体膜の膜厚は、300人より
薄いとピンホールが生ずるおそれがあり、また1000
人を超えると成膜時間が長くなる。
In the recording film according to the present invention with a thickness of 250 mm, when the writing laser power exceeds 10 mW, not only cluster components agglomerate but also bits are formed, causing confusion when reading information. Therefore, in order to prevent the formation of bits, a fourth
As shown in the figure, an information recording medium 21 can be obtained in which a dielectric film 20 with a thickness of 300 to 1000 layers is laminated on a recording film 14 formed on a substrate 13. As the dielectric film, S t02 , S [OSA, 1'SS LN, etc. can be used. If the dielectric film is thinner than 300 mm, pinholes may occur;
If you exceed the number of people, the film formation time will be longer.

また第5図に示すように、誘電体膜20は、本発明によ
る基板13と記録膜14からなる情報記録媒体18同士
を接着層19を介して接着する場合、記録膜14表面を
接着層19から保護する役目も果たす。
Further, as shown in FIG. 5, when the information recording medium 18 consisting of the substrate 13 and the recording film 14 according to the present invention is bonded to each other via the adhesive layer 19, the dielectric film 20 covers the surface of the recording film 14 with the adhesive layer 19. It also serves as a protector.

本発明においては、情報の記録が相変化を利用して行わ
れるために、記録膜上に空気が存在しなくてもよく、2
枚の情報記録媒体同士を直接接着できるのである。さら
に本発明による情報の記録はピットの形成によるもので
ないため、リムを生ずることなく、情報の記録箇所を記
録膜上のマーキング部分に正確に対応できる。このため
ビット間隔を詰めて高密度の記録も可能となる。
In the present invention, since information is recorded using phase change, there is no need for air to exist on the recording film.
It is possible to directly bond two pieces of information recording media together. Furthermore, since the information recording according to the present invention is not based on the formation of pits, the information recording location can accurately correspond to the marking portion on the recording film without producing a rim. Therefore, it is possible to narrow the bit interval and perform high-density recording.

実施例3 実施例1の方法に従って流量比Q−5及び50%下で成
膜したAg33Te6.を含む膜厚250人の記録膜の
反射率は、第6図に示すように、Te単体膜及びAgT
e単体膜(Q−0)の反射率が迅速な酸化によって低下
してしまう雰囲気中(65℃−90%)でさえも、10
00時間大きな変化がなく極めて安定であった。反射率
は成膜直後のものを1として規格化しである。このこと
はPC,PMMAといった比較的酸素や水を透過しやす
い有機樹脂基板上にも、誘電体保護膜を介さずに形成で
きることを意味している。光記録感度は、熱伝導率の小
さい有機樹脂基板上に成膜した方がガラス基板上に成膜
した場合よりも良好である。従って本発明によれば光記
録感度の高い情報記録媒体を得ることが可能になる。
Example 3 An Ag33Te6 film was formed according to the method of Example 1 at a flow rate ratio of Q-5 and 50%. As shown in FIG.
Even in an atmosphere (65°C - 90%) where the reflectance of the single film (Q-0) decreases due to rapid oxidation, the
It was extremely stable with no major changes for 00 hours. The reflectance is normalized by setting the reflectance immediately after film formation to 1. This means that it can be formed on organic resin substrates such as PC and PMMA that are relatively permeable to oxygen and water without using a dielectric protective film. The optical recording sensitivity is better when the film is formed on an organic resin substrate with low thermal conductivity than when it is formed on a glass substrate. Therefore, according to the present invention, it is possible to obtain an information recording medium with high optical recording sensitivity.

第7(a)図には、前述のQ−50%下で成膜した本発
明による記録膜の膜厚方向のオージェ電子分光(AES
)の結果を示した。比較例とじて炭素量が膜内部と基板
との界面部分で差のない他は本発明の記録膜と同じ記録
膜の結果を第7(b)図に示す。記録膜にはC%TeS
Ag以外にもHが含まれるが、オージェ電子の発生原理
からいってHは検出できないため、C5Te及びAg成
分、並びに酸化によって吸収された酸素を示した。AE
Sは膜の表面から測定を開始し、有機樹脂基板(ここで
はPC)が現れるまでAr+イオンによるスパッタをし
ながら行った。これを観ると、本発明の記録膜は比較例
の記録膜に比べ、基板と接する領域では、Cの量が膜中
における量よりも多く、他方酸素の瓜は少ないので酸化
が進行していないことが分る。
FIG. 7(a) shows Auger electron spectroscopy (AES) in the film thickness direction of the recording film according to the present invention formed under the above-mentioned Q-50% condition.
) showed the results. FIG. 7(b) shows the results of a recording film, which is the same as the recording film of the present invention, as a comparative example, except that there is no difference in carbon content between the inside of the film and the interface between the substrate and the film. The recording film contains C%TeS.
Although H is included in addition to Ag, H cannot be detected based on the principle of generation of Auger electrons, so C5Te and Ag components as well as oxygen absorbed by oxidation are shown. A.E.
Measurement of S was started from the surface of the film, and was performed while sputtering with Ar+ ions until the organic resin substrate (in this case, PC) appeared. Looking at this, it can be seen that in the recording film of the present invention, compared to the recording film of the comparative example, in the region in contact with the substrate, the amount of C is greater than the amount in the film, and on the other hand, the amount of oxygen is small, so oxidation does not progress. I understand.

上記実施例においては、透明な有機樹脂基板を用いたが
、書込み及び再生レーザ光を、基板を透過させないで記
録膜面側から入射させるときは、基板は不透明であって
もよい。
In the above embodiments, a transparent organic resin substrate was used, but the substrate may be opaque when the writing and reproducing laser beams are incident from the recording film side without passing through the substrate.

[発明の効果コ 以上説明したように本発明によれば、基板との界面でも
酸化のおそれがなく、かつ高感度の記録膜を有する情報
記録媒体を提供できる。
[Effects of the Invention] As described above, according to the present invention, it is possible to provide an information recording medium that is free from oxidation even at the interface with the substrate and has a highly sensitive recording film.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例に係る情報記録媒体の断面図
、第2図は本発明の一実施例に係る光記録膜形成装置、
第3図は多重干渉効果による反射率の変化を示す図、第
4図は本発明の情報記録媒体の記録膜上に誘電体膜を積
層したものの断面図、第5図は本発明の情報記録媒体同
士をエアサンドイッチ型にしたものの断面図、第6図は
再生時間と反射レベルの変化を示す図、並びに第7(a
)及び第7(b)図は記録膜のAES図である。 1・・・・・・チェンバ、9・・・・・・AgTe合金
ターゲット、13・・・・・・PC基板、14・・・・
・・AgTe−C膜。 出願人代理人 弁理士 鈴江武彦 第 図 第 図 第 図 膜4(λ) 第 図 第 図 第7(a)図 奮 第7(b)図
FIG. 1 is a cross-sectional view of an information recording medium according to an embodiment of the present invention, and FIG. 2 is an optical recording film forming apparatus according to an embodiment of the present invention.
FIG. 3 is a diagram showing changes in reflectance due to multiple interference effects, FIG. 4 is a cross-sectional view of a dielectric film laminated on the recording film of the information recording medium of the present invention, and FIG. 5 is a diagram showing the information recording medium of the present invention. Figure 6 is a cross-sectional view of an air sandwich type media, Figure 6 is a diagram showing changes in playback time and reflection level, and Figure 7 (a)
) and FIG. 7(b) are AES diagrams of the recording film. 1...Chamber, 9...AgTe alloy target, 13...PC board, 14...
...AgTe-C film. Applicant's representative Patent attorney Takehiko Suzue Figure 4 (λ) Figure 7 (a) Figure 7 (b)

Claims (1)

【特許請求の範囲】[Claims] (1)基板と、 この基板上にAgTe合金を流量Xの炭化水素ガスと流
量Yの希ガスの混合雰囲気中で流量比Q={X/(X+
Y)}×100%が5≦Q≦50%下で形成されたAg
_xTe_1_0_0_−_x(2≦x≦50原子%)
合金並びに炭素及び水素を含み、前記基板と接する部分
の炭素量が膜内部の炭素量より多い非晶質状態の記録膜
と、 を具備したことを特徴とする情報記録媒体。
(1) Substrate and AgTe alloy on this substrate in a mixed atmosphere of a hydrocarbon gas at a flow rate of X and a rare gas at a flow rate of Y at a flow rate ratio Q={X/(X+
Y)}×100% is Ag formed under 5≦Q≦50%
_xTe_1_0_0_-_x (2≦x≦50 atomic%)
An information recording medium comprising: an amorphous recording film containing an alloy, carbon and hydrogen, and in which the amount of carbon in a portion in contact with the substrate is greater than the amount of carbon inside the film.
JP63272041A 1988-10-28 1988-10-28 Information recording medium Pending JPH02121132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63272041A JPH02121132A (en) 1988-10-28 1988-10-28 Information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63272041A JPH02121132A (en) 1988-10-28 1988-10-28 Information recording medium

Publications (1)

Publication Number Publication Date
JPH02121132A true JPH02121132A (en) 1990-05-09

Family

ID=17508297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63272041A Pending JPH02121132A (en) 1988-10-28 1988-10-28 Information recording medium

Country Status (1)

Country Link
JP (1) JPH02121132A (en)

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