JPH02167779A - Information recording medium - Google Patents

Information recording medium

Info

Publication number
JPH02167779A
JPH02167779A JP63322044A JP32204488A JPH02167779A JP H02167779 A JPH02167779 A JP H02167779A JP 63322044 A JP63322044 A JP 63322044A JP 32204488 A JP32204488 A JP 32204488A JP H02167779 A JPH02167779 A JP H02167779A
Authority
JP
Japan
Prior art keywords
film
substrate
carbon
hydrogen
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63322044A
Other languages
Japanese (ja)
Inventor
Hideki Okawa
秀樹 大川
Norio Ozawa
小沢 則雄
Motonari Matsubara
松原 基成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP63322044A priority Critical patent/JPH02167779A/en
Publication of JPH02167779A publication Critical patent/JPH02167779A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24308Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24316Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318Non-metallic elements
    • G11B2007/24328Carbon
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B7/2437Non-metallic elements

Abstract

PURPOSE:To provide a long-lived data recording medium even under circumstances at high temperature and humidity by forming a recording film of amorphous state which contains Cu, Te100-x(5<=x<=45 atomic %) alloy as well as carbon and hydrogen in a specific flow of a mixed hydrocarbon and rare gas atmosphere with the more amount of carbon in the part in contact with the substrate than that in the film, on the substrate. CONSTITUTION:A recording film 14 of amorphous state is provided on a substrate 13. This film contains an AuTe alloy in the flow X of a mixed hydrocarbon gas and rare gas atmosphere on a substrate and Cu, Te100-x(5<=x<=45 atomic %) alloy as well as carbon and hydrogen at less than 5<=Q<=50 % where Q={X/(X+Y)}X100%. The film also contains the more amount of carbon in the part in contact with the substrate than that of the film. If a film is formed at less than 5<=Q<=50 % (Q = flow rate), an optical absorption rate does not deteriorate due to the excessive amount of carbon C and hydrogen H. A recording film 14 reaches the minimum value of reflection factor due to a multiple interference effect, if the film is 1,000Angstrom thick. If the film is changed from an amorphous phase (dispersed state) to a crystal phase (flocculated state) at that thickness, the reflection factor becomes significant and data can be recorded accordingly.

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、例えばレーザ光の照射により相変化が行われ
ることにより情報を書込み、該成分の相変化によるレー
ザ光の振幅の変化を通じて該情報の読出しを行なう情報
記録媒体に関する。
[Detailed Description of the Invention] [Objective of the Invention] (Industrial Application Field) The present invention is directed to writing information by a phase change caused by irradiation with a laser beam, for example, and to change the amplitude of the laser beam due to the phase change of the component. The present invention relates to an information recording medium in which the information is read through changes in the information.

(従来の技術) レーザ光の照射により情報が記録され、さらに、記録さ
れた情報の再生がなされる情報記録媒体の一種として、
Teを主成分とする記録膜を具備したものが開発されて
いる。さらに、このTeを主成分とする記録膜に炭素並
びに水素を含んだ記録膜が開発され、実用化に至ってい
る(特開昭58−9234号公報参照)。
(Prior Art) As a type of information recording medium, information is recorded by irradiation with laser light and the recorded information is reproduced.
A device equipped with a recording film containing Te as a main component has been developed. Furthermore, a recording film containing carbon and hydrogen in addition to the Te-based recording film has been developed and put into practical use (see Japanese Patent Laid-Open No. 58-9234).

この記録膜を作成する際には、Teを炭化水素ガスを含
む雰囲気中でスパッタする。すると、Te単体の膜(T
e膜)よりも高感度でかつ耐酸化性能に優れた記録膜(
以下Te−C膜と称す)が得られる。この記録膜は、非
晶質膜であり、テルル(Te ) 、炭素(C)及び水
素(H)を含み、また少なくとも炭素(C)と水素(H
)は化学結合をしていることが分っている。
When creating this recording film, Te is sputtered in an atmosphere containing hydrocarbon gas. Then, a film of simple Te (T
A recording film (
A Te-C film (hereinafter referred to as Te-C film) is obtained. This recording film is an amorphous film and contains tellurium (Te), carbon (C) and hydrogen (H), and at least carbon (C) and hydrogen (H).
) are known to form chemical bonds.

この記録膜は、Te膜にならってテルル(Te )と炭
化水素をソースとする蒸着(プラズマを用いない)によ
っては形成することができない。これは、炭化水素ガス
がプラズマ中で一旦分解した後、炭素(C)と水素(H
)が化学反応をして成膜されるためであり、これが光記
録膜形成時の大きな特徴となっている。
This recording film cannot be formed by vapor deposition using tellurium (Te) and hydrocarbon as sources (without using plasma), as in the case of the Te film. After hydrocarbon gas is once decomposed in plasma, carbon (C) and hydrogen (H
) is formed through a chemical reaction, and this is a major feature when forming an optical recording film.

(発明が解決しようとする課8) 上記のようなテルル(Te )及び炭化水素からなる記
録膜と、テルル(Te )で形成された記録膜とを65
℃−90%の高温高湿中(加速条件下)において比較す
ると、Te膜はわずか1週間以内に酸化して光記録性能
が損われるのに対し、Te −C膜は1ケ月を経過して
も膜の内部までは酸化されず安定であった。しかしなが
ら、Te−C膜も高温下(約75℃以上)では記録膜は
結晶化してしまうために、表面がざらつくため、ノイズ
が増大し、再生信号に与える影響が大きくなるという問
題点があった。
(Problem 8 to be solved by the invention) A recording film made of tellurium (Te) and a hydrocarbon as described above and a recording film formed of tellurium (Te) are
When compared under high temperature and high humidity (accelerated conditions) at -90% °C, the Te film oxidizes within just one week and optical recording performance is impaired, whereas the Te-C film oxidizes after one month. The inside of the membrane was not oxidized and remained stable. However, the recording film of the Te-C film also crystallizes at high temperatures (above about 75 degrees Celsius), resulting in a rough surface, which increases noise and has a greater effect on the reproduced signal. .

本発明は、上記問題点を解決するために、高温高湿の環
境下においても長寿命の情報記録媒体を提供することを
目的とする。
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, it is an object of the present invention to provide an information recording medium that has a long life even in a high temperature and high humidity environment.

[発明の構成] (課題を解決するための手段) 本発明は上記目的を達成するために、基板と、この基板
上にAu Te合金を流量Xの炭化水素ガスと希ガスの
混合雰囲気中で流量比Q={X/(X+Y)) x10
0%が5≦Q≦50%以下でCu s Te too−
*  (5≦x≦45原子%)合金並びに炭素及び水素
を含み、前記基板と接する部分の炭素量が膜内部の炭素
量より多い非晶質状態の記録膜と具備した情報記録媒体
を提供するものである。
[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the present invention includes a substrate and an AuTe alloy on the substrate in a mixed atmosphere of a hydrocarbon gas and a rare gas at a flow rate of X. Flow rate ratio Q={X/(X+Y)) x10
0% is 5≦Q≦50% or less and Cu s Te too-
*(5≦x≦45 atomic %) An information recording medium comprising an amorphous recording film containing an alloy, carbon and hydrogen, and in which the amount of carbon in the portion in contact with the substrate is greater than the amount of carbon inside the film. It is something.

(作 用) 本発明の情報記録媒体においては、Cu Te合金に炭
素及び水素を含んだ記録膜を具備することにより、高湿
の環境下においても長寿命とすることができる。また、
流量比Qを5≦Q≦50%下で成膜するために、炭素(
C)及び水素(H)が多すぎて光学的吸収率が低下する
ということはない。さ、らに、基板と接する部分の炭素
量が内部より多いため、基板/記録膜界面の酸化が生じ
ることがない。
(Function) The information recording medium of the present invention can have a long life even in a high humidity environment by providing a recording film containing carbon and hydrogen in a CuTe alloy. Also,
Carbon (
Too much C) and hydrogen (H) do not cause a decrease in optical absorption. Furthermore, since the amount of carbon in the portion in contact with the substrate is greater than that in the interior, oxidation of the substrate/recording film interface does not occur.

(実施例) 以下、本発明の一実施例を図面を参照して説明する。(Example) Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第1図は、本発明の情報記録媒体18の構造を概略的に
示した断面図である。本発明の情報記録媒体18は、基
板13及びこの基板13上に積層された記録膜14によ
り構成されるものである。
FIG. 1 is a cross-sectional view schematically showing the structure of an information recording medium 18 of the present invention. The information recording medium 18 of the present invention is composed of a substrate 13 and a recording film 14 laminated on the substrate 13.

基板13は、情報の記録及び再生のために情報記録媒体
上に照射されるレーザ光に対して透明な材質のものが用
いられる。例えば、近赤外近傍の発振波長を有するレー
ザ光を用いる場合は、ポリカーボネート(PC)、ポリ
メチルメタクリレート(PMMA) 、ガラス、ポリオ
レフィン並びにエポキシ樹脂等が用いられる。尚、この
基板13は、情報の書込み/再生レーザ光が記録膜14
面側から入射させる場合には、不透明な材質のものであ
っても構わない。
The substrate 13 is made of a material that is transparent to laser light that is irradiated onto the information recording medium for recording and reproducing information. For example, when using a laser beam having an oscillation wavelength near near infrared, polycarbonate (PC), polymethyl methacrylate (PMMA), glass, polyolefin, epoxy resin, etc. are used. Note that this substrate 13 is such that the information writing/reproducing laser beam is connected to the recording film 14.
When the light is incident from the surface side, it may be made of an opaque material.

また、記録膜14は、Cu−Te合金に炭素並びに水嵩
を含ませているものである。
The recording film 14 is made of a Cu-Te alloy containing carbon and water.

C−Hマトリクス中で分散しているクラスタ成分に凝集
時と分散時とで反射率に差が認められれば、例えばクラ
スタの分散の状態を情報の無記録状態に、凝集の状態を
情報の記録状態に各々対応させることにより、情報の記
録が可能ある。このクラスタの凝集は、レーザ照射によ
る発熱で生じさせることができるが、Teは単体で形成
された記録膜では、凝集時と分散時の反射率の差はそれ
ほど大きくない。しかしながら、Teと合金を形成し得
る成分を加えた場合には、反射率の差が認められること
がある。そこで、本発明においては、Tel:Cuを5
〜45原子%加えれば、反射率の差が顕著であることを
見出し、Cu−Te合金より成る記録膜を作成すること
にした。
If there is a difference in the reflectance of the cluster components dispersed in the C-H matrix between aggregation and dispersion, for example, the dispersion state of the clusters can be used as a state where no information is recorded, and the state of aggregation can be used as a state where information is recorded. It is possible to record information by making it correspond to each state. This aggregation of clusters can be caused by heat generation due to laser irradiation, but in a recording film formed of a single Te, the difference in reflectance between aggregation and dispersion is not so large. However, when a component that can form an alloy with Te is added, a difference in reflectance may be observed. Therefore, in the present invention, Tel:Cu is
It was discovered that if ~45 atomic % was added, the difference in reflectance was significant, and it was decided to create a recording film made of a Cu-Te alloy.

本発明による情報記録媒体18は、記録された情報の再
生は、相変化した記録膜14の反射率の差を検出するこ
とにより行うものであるが、この反射率の差は、一般に
記録膜14の膜厚が干渉による極値を与えるものの近傍
にある場合に大きくなり、好都合である。そのため、本
発明による記録膜の膜厚は、干渉効果が膜厚の増加とと
もに小さくなるなり、ある一定の反射率に収束すること
、及び記録時のレーザパワーが膜厚の増加とともに増加
することを考慮して、5000オングストローム以下と
する。
In the information recording medium 18 according to the present invention, recorded information is reproduced by detecting a difference in the reflectance of the recording film 14 that has undergone a phase change. This is advantageous because it becomes large when the film thickness is close to that which gives the extreme value due to interference. Therefore, the film thickness of the recording film according to the present invention is such that the interference effect decreases as the film thickness increases and converges to a certain reflectance, and that the laser power during recording increases as the film thickness increases. Taking this into consideration, the thickness is set to 5000 angstroms or less.

実施例1 第1図に示した情報記録媒体18を形成する方法につい
て説明する。
Example 1 A method for forming the information recording medium 18 shown in FIG. 1 will be described.

第2図は、本発明の情報記録媒体18を形成するスパッ
タ装置の概略図である。まず、このスパッタ装置のバル
ブ2をロータリーポンプ3側に開き、チェンバ1内を0
,2Torrまで排気した。
FIG. 2 is a schematic diagram of a sputtering apparatus for forming the information recording medium 18 of the present invention. First, open the valve 2 of this sputtering device to the rotary pump 3 side, and make the inside of the chamber 1 zero.
, evacuated to 2 Torr.

次いで、バルブ2をクライオポンプ5側に開いてI X
 10−’Torr以下まで排気した。この時、排気量
は制御する必要がないので、コンダクタンスバルブ4は
全開にしておいた。
Next, open the valve 2 to the cryopump 5 side and
It was evacuated to below 10-'Torr. At this time, since there was no need to control the displacement, the conductance valve 4 was left fully open.

次に、バルブ6を開けて、Arガスライン7からArガ
スをマスフローコントローラ(図示せず)で調節しなが
ら、チェンバ1内にIOSCCM導入した。次に、チェ
ンバ1内の圧力をイオンゲージ(図示せず)でモニター
し、コンダクタンスバルブ4で5 X 10−’Tor
rに調整した。この圧力が変動しないことを確認してか
ら、Cu−Te合金ターゲット9(直径5インチ:組成
はCu5sTe67;原子%)にDCパワーサプライ1
0から100Wを印加し、シャッタ11を閉じたままス
パッタ放電を5分間行なってスパッタクリーニングをし
た。
Next, the valve 6 was opened, and IOSCCM was introduced into the chamber 1 while adjusting Ar gas from the Ar gas line 7 using a mass flow controller (not shown). Next, the pressure inside the chamber 1 was monitored with an ion gauge (not shown), and the pressure inside the chamber 1 was adjusted to 5
Adjusted to r. After confirming that this pressure does not fluctuate, the DC power supply 1
Sputter cleaning was performed by applying 0 to 100 W and performing sputter discharge for 5 minutes with the shutter 11 closed.

A「ガスの供給とDCパワーの供給を停止した後、クラ
イオポンプ5を用いてチェンバ1内を一旦I X 10
−’Torr以下に排気した。その後、バルブ6と17
を開けてチェンバ1内にA「ガスとCH4ガスを、Ar
ガスライン7とCH4ガスライン8を通してマスフロー
コントローラ(図示せず)で調節しながら、各々5SC
CMとIO5CCM導入した。次いで、コンダクタンス
バルブ4を用いてチェンバ1内の圧力を5X10−’T
orrに制御した。この圧力変動がないことを確認した
後、Cu Teターゲット9にDCパワーサプライ10
から100Wを印加した。スパッタ放電させた安定に放
電していることを確かめた後、シャッタ11を開けて、
予め回転子12にセットしておいたポリカーボネート(
P C)基板13上にCuTe合金並びに炭素及び水素
を含んだ記録膜14を積層した。回転子は60 rpm
で回転させた。次に、−度放電を中止してガスを排気し
た後、今度はCH4とA「ガスを各々IOSCCMづつ
導入した。約1分間、5 X 10 ””Torrの圧
力を維持していることを確認した後、放電させた。膜厚
が1000オングストロームとなったところで、シャッ
タを閉じパワーの供給を停止した。
A: After stopping the gas supply and DC power supply, use the cryopump 5 to temporarily pump the inside of the chamber 1 to I
-'Torr or less. Then valves 6 and 17
Open the A gas and CH4 gas in the chamber 1.
5SC each through gas line 7 and CH4 gas line 8 while adjusting with a mass flow controller (not shown).
CM and IO5CCM were introduced. Next, the pressure inside the chamber 1 is reduced to 5X10-'T using the conductance valve 4.
It was controlled to orr. After confirming that there is no pressure fluctuation, connect the DC power supply 10 to the Cu Te target 9.
100W was applied from After confirming that the sputter discharge is stable, open the shutter 11,
The polycarbonate (
PC) A recording film 14 containing a CuTe alloy and carbon and hydrogen was laminated on a substrate 13. rotor is 60 rpm
I rotated it. Next, after stopping the -degree discharge and exhausting the gas, IOSCCM of each CH4 and A gas was introduced. It was confirmed that the pressure of 5 X 10 '' Torr was maintained for about 1 minute. After that, discharge was caused. When the film thickness reached 1000 angstroms, the shutter was closed and power supply was stopped.

次いで、コンダクタンスバルブ4を全開し、クライオポ
ンプ5を用いてチェンバ1内をI×10−’Torr以
下まで排気した。バルブ15を開けて、N2ガスライン
16からN2ガスをチェンバ1内に導入して大気圧に戻
した後、情報記録媒体18を取出した。
Next, the conductance valve 4 was fully opened, and the inside of the chamber 1 was evacuated to below I×10 −′ Torr using the cryopump 5 . After opening the valve 15 and introducing N2 gas into the chamber 1 from the N2 gas line 16 to return the pressure to atmospheric pressure, the information recording medium 18 was taken out.

このようにして形成された情報記録媒体18の記録膜1
4は、X線回折分析の結果、特定の回折角度からの回折
ピークが認められないアモルファス膜であることが確認
された。このアモルファス膜は、多結晶膜と異なり結晶
粒界がないため、再生レーザ光が粒界部分で変調されて
粒界ノイズを生ずることがない。
Recording film 1 of information recording medium 18 formed in this way
As a result of X-ray diffraction analysis, Sample No. 4 was confirmed to be an amorphous film in which no diffraction peak was observed from a specific diffraction angle. Unlike a polycrystalline film, this amorphous film does not have grain boundaries, so the reproduced laser light is not modulated at the grain boundaries and does not generate grain boundary noise.

上記の方法により得られたCu 53Te 67、炭素
(C)及び水素(H)を含む記録膜14は、膜厚が10
00オングストロームのとき、第3図に示すように、多
重干渉効果により反射率が極小値となる。そのため、こ
の膜厚で非晶質(分散状態)から結晶状態(凝集状態)
に相変化させると、反射率の増加を顕著に認めることが
できることから、情報の記録が行なわれたことが分る。
The recording film 14 containing Cu53Te67, carbon (C) and hydrogen (H) obtained by the above method has a film thickness of 10
At 0.00 angstroms, as shown in FIG. 3, the reflectance reaches a minimum value due to the multiple interference effect. Therefore, at this film thickness, it changes from amorphous (dispersed state) to crystalline state (agglomerated state).
When the phase is changed to , a significant increase in reflectance can be observed, indicating that information has been recorded.

ところで上記実施例においては、スパッタ放電の最終時
に、メタンガスの流量を増加させて流量比Qを高くした
が、通常、炭化水素ガスと希ガスの混合雰囲気中でスパ
ッタする場合には、チェンバ内で生成する炭素の量は、
炭化水素ガスの流量を増加させなく°ても、放電の最終
時に放電初期より多くなることを利用してもよい。
By the way, in the above embodiment, the flow rate of methane gas was increased at the final stage of sputtering discharge to increase the flow rate ratio Q, but normally when sputtering is performed in a mixed atmosphere of hydrocarbon gas and rare gas, The amount of carbon produced is
Even if the flow rate of hydrocarbon gas is not increased, it may be possible to utilize the fact that the flow rate is higher at the end of discharge than at the beginning of discharge.

実施例2 実施例1に示した方法により、Cu 3iTe 67、
炭素(C)及び水素(H)を含む記録膜14の膜厚を2
50オングストロームとして、PC基板13上に成膜し
、回転数180 Orpm 、記録周波数3.7MH2
、記録パルス幅5 n5ecの条件下で、線速度5. 
5m /seeに相当する箇所において7mWのレーザ
パワーで書込んだところ、30dBの良好なC/ N 
(Carrier/ N olse)比を得た。
Example 2 By the method shown in Example 1, Cu 3iTe 67,
The film thickness of the recording film 14 containing carbon (C) and hydrogen (H) is 2
A film with a thickness of 50 angstroms was formed on a PC board 13 at a rotation speed of 180 Orpm and a recording frequency of 3.7 MH2.
, recording pulse width 5 n5ec, linear velocity 5.
When writing with a laser power of 7mW at a location equivalent to 5m/see, a good C/N of 30dB was obtained.
(Carrier/Nolse) ratio was obtained.

実施例3 実施例2で示した記録膜14おいては、書込みレーザパ
ワーが10a+W以上になると、クラスタ成分の凝集だ
けでなく、ピットも形成され、情報の読出し時に混乱を
生じる可能性がある。そこで、このピットの形成を防止
するために、第4図に示すように、基板13上に成膜さ
れた記録膜14上に、膜厚300乃至1000オングス
トロームの誘電体膜20を積層した構造を有した情報記
録媒体21を製造した。この誘電体膜20としては、S
l 02、Si 01AII、SiN等の材料を用いて
形成させることができる。また、誘電体膜20の膜厚は
、300オングストローム以下であると、ピンホールが
生ずる恐れがあり、また、1000オングストローム以
上のときは成膜時間が長くなるため、実用的ではない。
Example 3 In the recording film 14 shown in Example 2, when the writing laser power exceeds 10a+W, not only cluster components aggregate but also pits are formed, which may cause confusion when reading information. Therefore, in order to prevent the formation of pits, a dielectric film 20 having a thickness of 300 to 1000 angstroms is laminated on the recording film 14 formed on the substrate 13, as shown in FIG. An information recording medium 21 having the following properties was manufactured. As this dielectric film 20, S
It can be formed using materials such as l 02, Si 01AII, and SiN. Furthermore, if the thickness of the dielectric film 20 is less than 300 angstroms, pinholes may occur, and if it is more than 1000 angstroms, the film formation time will be longer, which is not practical.

さらに、第5図に示すように、誘電体膜20は、第1図
に示した基板13と記録膜14からなる情報記録媒体1
8同士を接着層19を介して接着する場合、記録膜14
表面を接着層1つから保護する役目も果す。さらに、こ
の情報記録媒体においては、相変化により情報を記録す
るために、ピットの周辺部に形成さけるリム(盛上がり
)を生じることがない。そのため、情報のピット間隔を
詰めて記録することが可能であり、高密度に情報の記録
を行うことができた。
Further, as shown in FIG. 5, the dielectric film 20 is connected to the information recording medium 1 consisting of the substrate 13 and the recording film 14 shown in FIG.
8 are bonded together via the adhesive layer 19, the recording film 14
It also serves to protect the surface from a single adhesive layer. Furthermore, in this information recording medium, since information is recorded by phase change, a rim (bulge) that is formed around the pit does not occur. Therefore, it was possible to record information with narrower pit intervals, and it was possible to record information with high density.

実施例4 実施例1の方法により、流量比Q−5及び50%下で成
膜したCu 5sTe 67を含む膜厚250オングス
トロームの記録膜の反射率は、第6図に示すように、T
e単体膜及びCu Te単体膜(Q−〇)の反射率が迅
速な酸化によって低下してしまう雰囲気中(65℃−9
0%)でさえも、1000時間大きな変化がなく極めて
安定であった。
Example 4 The reflectance of a 250 angstrom thick recording film containing Cu 5sTe 67 formed by the method of Example 1 at a flow rate ratio of Q-5 and 50% is T as shown in FIG.
In an atmosphere where the reflectance of e single film and Cu Te single film (Q-○) decreases due to rapid oxidation (65℃
Even at 0%), it was extremely stable with no significant change for 1000 hours.

すなわち、本発明の情報記録媒体18においては、PC
,PMMAといった比較的酸素や水を透過しやすい有機
樹脂基板上にも、誘電体保護膜20を介さずに形成でき
ることを意味している。情報記録媒体の光記録感度は、
熱伝導率の小さい有機樹脂基板上に成膜した方が、ガラ
ス基板上に成膜した場合よりも良好であり、実用的であ
る。尚、第6図における反射率は、成膜直後のものを1
として規格化しである。
That is, in the information recording medium 18 of the present invention, the PC
, PMMA, etc., which are relatively permeable to oxygen and water, can be formed without using the dielectric protective film 20. The optical recording sensitivity of the information recording medium is
Forming a film on an organic resin substrate with low thermal conductivity is better and more practical than forming a film on a glass substrate. Note that the reflectance in Figure 6 is 1
It has been standardized as

次に、第7図(a)に、Q−50%下で成膜した記録膜
の膜厚方向におけるオージェ電子分光(AES)の結果
を示した。さらに、本発明との比較例として、炭素量が
膜内部と基板との界面部分で差のない記録膜の場合のオ
ージェ電子分光(AES)の結果を第7図(b)に示す
。記録膜には、炭素(C)、テルル(Te )及び銅(
Cu )以外にも水素(H)が含まれるが、オージェ電
子の発生原理からいって、水素(H)は検出できない。
Next, FIG. 7(a) shows the results of Auger electron spectroscopy (AES) in the film thickness direction of the recording film formed under Q-50%. Furthermore, as a comparative example with the present invention, FIG. 7(b) shows the results of Auger electron spectroscopy (AES) in the case of a recording film in which the amount of carbon is the same between the inside of the film and the interface between the substrate and the film. The recording film contains carbon (C), tellurium (Te), and copper (
Although hydrogen (H) is included in addition to Cu ), hydrogen (H) cannot be detected based on the principle of Auger electron generation.

そのため、炭素(C)、テルル(Te )及び銅(Cu
 )成分並びに酸化によって吸収された酸素を示した。
Therefore, carbon (C), tellurium (Te) and copper (Cu)
) components as well as oxygen absorbed by oxidation.

AESは膜の表面から測定を開始し、有機樹脂基板が現
れるまで、Ar+イオンによるスパッタを行なった。第
7図の分析結果によれば、本発明の記録膜14の基板1
3と接する領域では、炭素(C)の量が膜中における量
よりも多い。−方、酸素(H)の量は、膜中における量
よりも少ないので酸化が進行していないことが分る。
AES measurement was started from the surface of the film, and sputtering with Ar+ ions was performed until the organic resin substrate appeared. According to the analysis results shown in FIG. 7, the substrate 1 of the recording film 14 of the present invention
In the region in contact with 3, the amount of carbon (C) is greater than the amount in the film. - On the other hand, it can be seen that oxidation has not progressed because the amount of oxygen (H) is smaller than the amount in the film.

[発明の効果] 以上説明したように本発明によれば、高温高温の環境下
においても長寿命の情報記録媒体を提供することができ
る。さらに、基板との界面でも酸化せず、かつ高感度の
記録膜を有する情報記録媒体を提供できる。
[Effects of the Invention] As explained above, according to the present invention, it is possible to provide an information recording medium that has a long life even in a high temperature environment. Furthermore, it is possible to provide an information recording medium that does not oxidize even at the interface with the substrate and has a highly sensitive recording film.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例に係る情報記録媒体の構成を
示す断面図、第2図は第1図に示す情報記録媒体を形成
する光記録膜形成装置、第3図は多重干渉効果による反
射率の変化を示す図、第4図及び第5図は本発明の他の
実施例に係る情報記録媒体の構成を示す図、第6図は再
生時間と反射レベルの変化を示す図、第7図は記録膜の
AESの分析結果を示す図である。 基板  14 情報記録媒体 記録膜
FIG. 1 is a sectional view showing the structure of an information recording medium according to an embodiment of the present invention, FIG. 2 is an optical recording film forming apparatus for forming the information recording medium shown in FIG. 1, and FIG. 3 is a diagram showing the effect of multiple interference. FIG. 4 and FIG. 5 are diagrams showing the structure of an information recording medium according to another embodiment of the present invention, and FIG. 6 is a diagram showing changes in playback time and reflection level. FIG. 7 is a diagram showing the results of AES analysis of the recording film. Substrate 14 Information recording medium recording film

Claims (1)

【特許請求の範囲】[Claims] (1)基板と、 この基板上にCuTe合金を流量Xの炭化水素ガスと希
ガスの混合雰囲気中で流量比Q={X/(X+Y)}×
100%が5≦Q≦50%以下で形成されたCu_xT
e_1_0_0_−_x(5≦x≦45原子%)合金並
びに炭素及び水素を含み、前記基板と接する部分の炭素
量が膜内部の炭素量より多い非晶質状態の記録膜と、 を具備したことを特徴とする情報記録媒体。
(1) Substrate and CuTe alloy on this substrate in a mixed atmosphere of hydrocarbon gas and rare gas at flow rate X, flow rate ratio Q={X/(X+Y)}×
100% Cu_xT formed with 5≦Q≦50% or less
an amorphous recording film containing an e_1_0_0_-_x (5≦x≦45 atomic %) alloy, carbon and hydrogen, and in which the amount of carbon in the portion in contact with the substrate is greater than the amount of carbon inside the film; Characteristic information recording media.
JP63322044A 1988-12-22 1988-12-22 Information recording medium Pending JPH02167779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63322044A JPH02167779A (en) 1988-12-22 1988-12-22 Information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63322044A JPH02167779A (en) 1988-12-22 1988-12-22 Information recording medium

Publications (1)

Publication Number Publication Date
JPH02167779A true JPH02167779A (en) 1990-06-28

Family

ID=18139295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63322044A Pending JPH02167779A (en) 1988-12-22 1988-12-22 Information recording medium

Country Status (1)

Country Link
JP (1) JPH02167779A (en)

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