JPH02114620A - Manufacture of electrode foil for aluminum electrolytic capacitor - Google Patents
Manufacture of electrode foil for aluminum electrolytic capacitorInfo
- Publication number
- JPH02114620A JPH02114620A JP26845288A JP26845288A JPH02114620A JP H02114620 A JPH02114620 A JP H02114620A JP 26845288 A JP26845288 A JP 26845288A JP 26845288 A JP26845288 A JP 26845288A JP H02114620 A JPH02114620 A JP H02114620A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- stage
- aluminum
- etching process
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 24
- 239000011888 foil Substances 0.000 title claims abstract description 16
- 239000003990 capacitor Substances 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 78
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 17
- 235000002639 sodium chloride Nutrition 0.000 claims abstract description 15
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims abstract description 14
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims abstract description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 10
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims abstract description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 8
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims abstract description 8
- 230000007935 neutral effect Effects 0.000 claims abstract description 8
- 150000003839 salts Chemical class 0.000 claims abstract description 8
- 239000011780 sodium chloride Substances 0.000 claims abstract description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 4
- 235000019270 ammonium chloride Nutrition 0.000 claims abstract description 4
- 235000006408 oxalic acid Nutrition 0.000 claims abstract description 4
- 239000001103 potassium chloride Substances 0.000 claims abstract description 4
- 235000011164 potassium chloride Nutrition 0.000 claims abstract description 4
- 239000007864 aqueous solution Substances 0.000 claims description 19
- 239000002253 acid Substances 0.000 claims description 6
- 150000007513 acids Chemical class 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 16
- 238000004090 dissolution Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000019687 Lamb Nutrition 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はアルミ電解コンデンサ用電極箔に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an electrode foil for an aluminum electrolytic capacitor.
従来の技術
アルミ電解コンデンサ用電極箔(以下電極箔と言う)は
、コンデンサの小形化を図るためにアルミニウム箔を電
気化学的あるいは化学的にエツチングして表面積を拡大
したものが使用されている。BACKGROUND OF THE INVENTION Electrode foils for aluminum electrolytic capacitors (hereinafter referred to as electrode foils) are made by electrochemically or chemically etching aluminum foil to enlarge its surface area in order to reduce the size of capacitors.
この表面積を拡大するために種々のエツチング方法が研
究されており、従来よりこの目的のため。Various etching methods have been studied to increase this surface area, and conventionally for this purpose.
エンチングを2段以上に分割することが行なわれてきた
。即ち第1段エツチングで塩酸に多孔質皮膜生成酸を加
えた水溶液を用いてエツチングピットを発生させ、続い
て第2段エツチングでc7!を含む中性塩水溶液を用い
ることにより表面溶解を押えエツチングビットを更に発
生、成長させることにより表面積拡大を図ってきた。It has been practiced to divide enching into two or more stages. That is, in the first stage etching, etching pits are generated using an aqueous solution of hydrochloric acid and porous film forming acid, and then in the second stage etching, c7! The surface area has been expanded by suppressing surface dissolution and further generating and growing etching bits by using a neutral salt aqueous solution containing .
発明が解決しようとする課題
従来の方法では、エツチングの第2段以降で表面積拡大
効果に問題があった。即ちエツチングの第2段ではエツ
チングの進行に伴って生じる表面溶解を抑制するため、
CI を含む中性塩水溶液を用いて表面溶解は防止でき
ているが、この水溶液中では水酸化皮膜上でエツチング
ピットの発生起侭となる表面の皮膜欠陥部の数と分散が
充分ではなくエツチングピットの発生及び成長が表面の
局部に集中し、その結果表面積拡大効果が減少するだけ
でなく、電極箔の機械的強度を損うという新たな課題を
生じていた。そのため電極箔としてはアルミ電解コンデ
ンサの小形化を図る上で表面積拡大効果が不足し問題と
なっていた。Problems to be Solved by the Invention In the conventional method, there was a problem in the effect of enlarging the surface area after the second stage of etching. That is, in the second stage of etching, in order to suppress surface dissolution that occurs as etching progresses,
Surface dissolution has been prevented using a neutral salt aqueous solution containing CI, but in this aqueous solution, the number and dispersion of film defects on the surface, which are likely to cause etching pits on the hydroxide film, are insufficient, resulting in etching. The generation and growth of pits concentrates on localized areas on the surface, which not only reduces the surface area expansion effect but also causes a new problem of impairing the mechanical strength of the electrode foil. For this reason, when using electrode foils to downsize aluminum electrolytic capacitors, the effect of increasing the surface area is insufficient, which has been a problem.
本発明は上記の課題を解決するもので、電極箔の機械的
強度を保持しながら表面積拡大できるアルミ電解コンデ
ンサ用電極箔の製造方法を提供することを目的とする。The present invention solves the above-mentioned problems, and aims to provide a method for manufacturing an electrode foil for an aluminum electrolytic capacitor that can increase the surface area while maintaining the mechanical strength of the electrode foil.
課題を解決するための手段 この目的を達成するために本発明では、第1段。Means to solve problems In order to achieve this objective, the present invention provides the first stage.
第2段の2段階に分けてエツチングを行なう際に、第1
段エツチングを塩酸2〜15%と硫酸、蓚酸。When performing etching in two stages, the first
Stage etching with 2-15% hydrochloric acid, sulfuric acid, and oxalic acid.
リン酸からなる多孔質皮膜生成酸の内の少なくとも1種
を0.01〜5%含む水溶液中で直流エツチングを行な
った後、第2段エツチングをCl を含む中性塩、塩
化ナトリウム、塩化アンモニウム。After performing direct current etching in an aqueous solution containing 0.01 to 5% of at least one of porous film forming acids consisting of phosphoric acid, the second stage etching is performed using neutral salts containing Cl, sodium chloride, and ammonium chloride. .
塩化カリウムの内の少なくとも1種0.1〜1o%を含
む水溶液中で直流エツチングを行ない、この第2段エツ
チングの中間において沸酸、塩酸の内少なくとも1種を
0.01〜15%含む水溶液中でアルミ表面上の水酸化
皮膜を溶解させる中間処理を少なくとも1回以上行なう
ものである。Direct current etching is performed in an aqueous solution containing 0.1 to 10% of at least one of potassium chloride, and in the middle of this second stage etching, an aqueous solution containing 0.01 to 15% of at least one of hydrochloric acid and hydrochloric acid. In this process, an intermediate treatment for dissolving the hydroxide film on the aluminum surface is performed at least once.
作用
本発明によれば、エツチングの進行により表面溶解と機
械的強度を損失させることなしにエツチングピットを成
長させ、アルシミニウム溶解減量ト比例的に表面積を拡
大することができる。以下、各エツチング工程の作用に
ついて説明する。According to the present invention, etching pits can be grown as etching progresses without causing surface dissolution or loss of mechanical strength, and the surface area can be expanded in proportion to the aluminum dissolution loss. The effects of each etching process will be explained below.
(第1段エツチング)
エツチングピットを高密度かつ均一に生成させるために
適度な塩酸濃度と多孔質皮膜を生成し得る酸の適当な添
加が必要である。塩酸濃度は、2%未満であるとエツチ
ング効果が小さく、15%を越えると表面の全面溶解が
起こる。従って2〜15%の範囲で、特に好適なのは3
〜8%である。(First Stage Etching) In order to form etching pits with high density and uniformity, it is necessary to add an appropriate concentration of hydrochloric acid and an acid capable of forming a porous film. If the hydrochloric acid concentration is less than 2%, the etching effect will be small, and if it exceeds 15%, the entire surface will be dissolved. Therefore, it is in the range of 2 to 15%, and 3 is particularly preferable.
~8%.
多孔質皮膜を生成し得る酸の添加量は、硫酸、蓚酸、リ
ン酸のいずれの場合もo、01%未満であると多孔質皮
膜の生成が不充分であり、5%を越えると皮膜形成反応
が強くなり、発生したエッチピットの長さ方向への成長
が抑制されてしまう。従って0.01〜6%の範囲で、
特に好適なのは0.05〜1%である。この様な好適範
囲内では、高密度かつ均一な孔を持つ多孔質皮膜がアル
ミ表面上に生成し、その孔の部分をr4 が侵食してエ
ツチングピットが形成されるが、一方エッチングピット
以外の部分は皮膜でおおわれているから表面溶解が抑制
され、結果的に高密度かつ均一なエツチングピットが生
成される。エツチング液温も重要な影響を及ぼし、60
0未満ではエツチング効果が小さく、100℃を越える
と表面の全面溶解が起こる。従って60〜100’Cの
範囲内で、特に好適なのは70〜90Cである。また電
流密度は3A/dm2未満ではエツチング効果が小さく
、70A/dm2を越えると表面の全面溶解が起こる。The amount of acid that can form a porous film, whether it is sulfuric acid, oxalic acid, or phosphoric acid, is less than 0.01%, the formation of a porous film is insufficient, and if it exceeds 5%, the film is not formed. The reaction becomes stronger, and the growth of the generated etch pits in the length direction is suppressed. Therefore, in the range of 0.01 to 6%,
Particularly preferred is 0.05-1%. Within this preferred range, a porous film with high-density and uniform pores is formed on the aluminum surface, and r4 erodes the pores to form etching pits. Since the portion is covered with a film, surface dissolution is suppressed, resulting in formation of highly dense and uniform etching pits. The temperature of the etching solution also has an important effect;
If it is less than 0, the etching effect will be small, and if it exceeds 100°C, the entire surface will be dissolved. Therefore, within the range of 60 to 100'C, particularly preferred is 70 to 90'C. Further, if the current density is less than 3 A/dm2, the etching effect will be small, and if it exceeds 70 A/dm2, the entire surface will be dissolved.
従って3〜70ム/ dm2の範囲内で、特に好適なの
は10〜40A/dm2である。Therefore, within the range of 3 to 70 A/dm2, particularly preferred is 10 to 40 A/dm2.
(第2段エツチング)
第2段エツチングは第1段エツチングの後を受けて、中
間処理と組み合わせて表面溶解を抑制しながら、更にエ
ツチングピットを発生させ、同時に第1段エツチングで
生成されたエツチングピットを成長させる。このため、
C1−を含む中性塩。(Second stage etching) The second stage etching is carried out after the first stage etching and is combined with an intermediate treatment to suppress surface dissolution while further generating etching pits. Grow the pit. For this reason,
Neutral salt containing C1-.
塩化ナトリウム、塩化アンモニウム、塩化カリウムの内
の少なくとも1種を含む水溶液中でのエツチングが必要
である。これらいずれの中性塩の水溶液の場合でも、そ
の濃度が0.1%未満ではエツチング効果が小さく、1
0%を越えると表面の全面溶解が起こる。従って、0.
1〜10%の範囲内で、特に好適なのは1〜3%である
。この様な好適範囲内で中間処理と組み合わすことによ
り表面溶解をほとんど起こすことなくエソチングピット
を新たに発生させることができ、同時に第1段エツチン
グで生成したエツチングビットを成長させることが可能
である。第2段エツチングでは、第1段エツチング同様
液温は50〜10O℃の範囲内で、特に好適なのは70
〜90℃であシ、電流密度は3〜70ム/dm2の範囲
内で、特に好適なのは4〜20ム/dm2である。Etching is required in an aqueous solution containing at least one of sodium chloride, ammonium chloride, and potassium chloride. In the case of an aqueous solution of any of these neutral salts, if the concentration is less than 0.1%, the etching effect is small;
If it exceeds 0%, total surface dissolution occurs. Therefore, 0.
Within the range of 1 to 10%, particularly preferred is 1 to 3%. By combining this with intermediate treatment within such a suitable range, it is possible to generate new etching pits with almost no surface dissolution, and at the same time it is possible to grow the etched bits generated in the first stage etching. be. In the second stage etching, as in the first stage etching, the liquid temperature is within the range of 50 to 100°C, and particularly preferably 70°C.
The current density is within the range of 3 to 70 μm/dm 2 , particularly preferably 4 to 20 μm/dm 2 .
(中間処理)
本発明では第2段エツチングの中間において中間処理を
行なう。この処理は、第1段エツチングで新し7いエツ
チングピントの発生知よシ表面積拡大がアルシミニウム
溶解減qに比例的に進行してきたものを受は継いで、第
2段エツチングにおいても表面積拡大をアルミ溶解減量
とともに飽和させること外く、更に比例して増加させる
ために行なう。これにより第2段エツチングで、エツチ
ングが集中してエツチングビットが必要以上に大きくな
りすぎたり、隣接するエツチングビットを破壊し/ζす
、あるいは表面溶解が起きないようにする作用をもつ。(Intermediate Processing) In the present invention, intermediate processing is performed in the middle of the second stage etching. This process continues the process in which a new etching focus was generated in the first stage of etching, and the surface area expansion progressed in proportion to the decrease in aluminum dissolution, and the second stage of etching also expanded the surface area. This is done not only to saturate the amount of aluminum melted but also to increase it proportionally. This has the effect of preventing the etching from concentrating in the second stage of etching, making the etching bits larger than necessary, destroying adjacent etching bits, or causing surface dissolution.
即ち第2段エツチングにおいても新しくエツチングビッ
トを均一に発生させ成長できるようにする。本発明では
、第2段エツチングでC1を含む中性塩の水溶液により
アルミ表面上に形成された水酸化皮膜が、従来より更に
エツチングビット発生起点となる皮膜欠陥を数多く均一
に分散して存在させることができるように第2段エツチ
ングの中間においてアルミニウム表面上に形成された水
酸化皮膜を溶解して、更に皮膜欠陥を生成し得る沸酸、
塩酸の化学的処理を行なう。処理液の濃度は0.01%
未満では表面水酸化皮膜の溶解効果が小さく、15%を
越えると表面水酸化皮膜が溶解されすぎて水酸化皮膜が
存在しなくなってしまい、次にエツチングした時、エツ
チングビットの発生起点が減少してしまう。従ってo、
01〜15%の範囲内で、特に好適なのは01〜6%で
ある。また液温は、20℃以下では表面水酸化皮膜の溶
解効果が小さく、90℃を越えると表面水酸化皮膜が溶
解されすぎてしまい、エツチングビット発生効果が少な
くなる。従って20〜90℃の範囲内で、特に好適なの
は40〜70℃である。That is, even in the second stage etching, new etching bits are uniformly generated and grown. In the present invention, the hydroxide film formed on the aluminum surface by an aqueous solution of a neutral salt containing C1 in the second stage etching causes a greater number of film defects, which are the starting points for etching bits, to exist in a more uniformly dispersed manner than in the past. buoyant acid, which can dissolve the hydroxide film formed on the aluminum surface during the second stage etching and further generate film defects;
Perform chemical treatment with hydrochloric acid. The concentration of the processing liquid is 0.01%
If it is less than 15%, the effect of dissolving the surface hydroxide film will be small, and if it exceeds 15%, the surface hydroxide film will be dissolved so much that no hydroxide film will exist, and the number of starting points for etching bits will decrease when etching is performed next time. It ends up. Therefore o,
Within the range of 01 to 15%, particularly preferred is 01 to 6%. Further, if the liquid temperature is below 20°C, the effect of dissolving the surface hydroxide film is small, and if it exceeds 90°C, the surface hydroxide film will be dissolved too much, and the effect of generating etching bits will be reduced. Therefore, within the range of 20 to 90°C, particularly preferred is 40 to 70°C.
ここで本発明による中間処理は、第2段エツチングの中
間において繰り返し実施することが可能であり、中間処
理を繰り返し実施することにより処理回数に比例して表
面積拡大効果を増加させることができる。Here, the intermediate treatment according to the present invention can be repeatedly performed in the middle of the second stage etching, and by repeatedly performing the intermediate treatment, the surface area enlarging effect can be increased in proportion to the number of times of treatment.
実施例 以下、本発明の実施例を比較例とともに説明する。Example Examples of the present invention will be described below along with comparative examples.
なお試料として、純度99.99%、厚さio。The sample has a purity of 99.99% and a thickness of io.
μmの高純度焼鈍アルミニウムを用いた。High-purity annealed aluminum with a diameter of μm was used.
〈比較例〉
第1段エツチングを塩酸7%硫酸を0.1%添加した液
温80℃の水溶液で、電流密度20ム/dm 2の直流
を90秒印加して行なった後、第2段エツチングを塩化
ナトリウム5%、液温80℃の水溶液で、電流密度1o
ム/ dv、2の直流を320秒印加して行なう。<Comparative example> After the first stage etching was carried out using an aqueous solution containing 7% hydrochloric acid and 0.1% sulfuric acid at a temperature of 80°C and applying a direct current with a current density of 20 μm/dm2 for 90 seconds, the second stage etching Etching was carried out using an aqueous solution containing 5% sodium chloride at a temperature of 80°C at a current density of 1o.
The test is carried out by applying a direct current of 2 pm/dv for 320 seconds.
〈実施例〉
第1段エツチングを比較例と同様に行なった後、第2段
エツチングを塩化ナトリウム5%、液温ao℃の水溶液
で、電流密度10ム/dm2の直流を120秒印加し、
次に塩酸1%、液温6ocの水溶液中で3秒浸漬処理を
行ない、更に再度第2段エツチングとして塩化ナトリウ
ム6%、液温80℃の水溶液で、電流密度10A/dm
2の直流を200秒印加して行なう。<Example> After the first stage etching was performed in the same manner as in the comparative example, the second stage etching was performed using an aqueous solution containing 5% sodium chloride and a liquid temperature of aoC, and applying a direct current at a current density of 10 μm/dm2 for 120 seconds.
Next, immersion treatment was performed for 3 seconds in an aqueous solution containing 1% hydrochloric acid at a temperature of 6°C, and then a second stage etching was performed again in an aqueous solution containing 6% sodium chloride at a temperature of 80°C at a current density of 10 A/d.
This is done by applying a direct current of 2 for 200 seconds.
上記比較例および本発明の実施例によるエツチング箔を
硼酸水溶液中で37Qv化成した後、各試料について静
電容量と折曲げ強度(1,oR。After etching foils according to the above comparative examples and examples of the present invention were subjected to 37Qv chemical conversion in a boric acid aqueous solution, the capacitance and bending strength (1, oR) of each sample were determined.
200、!?荷重、折曲げ角90’の条件下1往復で1
回とする)を測定した結果を第1表に示す。200! ? 1 in one round trip under load and bending angle of 90'
The results are shown in Table 1.
第1表
発明の効果
以上のように本発明の製造方法によれば、アルミニラム
溶解減量に比例して、高密度で適度なエツチングピット
径を有した均一なエツチングピットを生成させることが
でき、これにより表面積拡大効果の非常に大きいアルミ
電解コンデンサ用電極箔の製造が可能となる。Table 1 Effects of the Invention As described above, according to the manufacturing method of the present invention, uniform etching pits with a high density and an appropriate etching pit diameter can be produced in proportion to the weight loss of aluminum lamb melted. This makes it possible to manufacture electrode foil for aluminum electrolytic capacitors that has a very large surface area expansion effect.
Claims (3)
を行う際に、第2段エッチングの中間に、沸酸,塩酸の
内の少なくとも1種を0.01〜15%含む水溶液中で
アルミニウム表面上の水酸化皮膜を溶解させる中間処理
を少なくとも1回以上行なうことを特徴とするアルミ電
解コンデンサ用電極箔の製造方法。(1) When etching is performed in two or more stages, the first stage and the second stage, an aqueous solution containing 0.01 to 15% of at least one of hydrochloric acid and hydrochloric acid is added in the middle of the second stage etching. A method for manufacturing an electrode foil for an aluminum electrolytic capacitor, comprising performing at least one intermediate treatment for dissolving a hydroxide film on the aluminum surface.
酸,リン酸からなる多孔質皮膜生成酸の内の少なくとも
1種を0.01〜5%含む水溶液中での直流エッチング
である請求項1記載のアルミ電解コンデンサ用電極箔の
製造方法。(2) The first stage etching is direct current etching in an aqueous solution containing 2 to 15% hydrochloric acid and 0.01 to 5% of at least one of porous film forming acids consisting of sulfuric acid, oxalic acid, and phosphoric acid. A method for manufacturing an electrode foil for an aluminum electrolytic capacitor according to claim 1.
化ナトリウム,塩化アンモニウム,塩化カリウムの内の
少なくとも1種を0.1〜10%含む水溶液中での直流
エッチングである請求項1記載のアルミ電解コンデンサ
用電極箔の製造方法。(3) The second stage etching is direct current etching in an aqueous solution containing 0.1 to 10% of at least one of neutral salts containing Cl^-, sodium chloride, ammonium chloride, and potassium chloride. 1. The method for producing an electrode foil for an aluminum electrolytic capacitor according to 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26845288A JP2745575B2 (en) | 1988-10-25 | 1988-10-25 | Manufacturing method of electrode foil for aluminum electrolytic capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26845288A JP2745575B2 (en) | 1988-10-25 | 1988-10-25 | Manufacturing method of electrode foil for aluminum electrolytic capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02114620A true JPH02114620A (en) | 1990-04-26 |
JP2745575B2 JP2745575B2 (en) | 1998-04-28 |
Family
ID=17458704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26845288A Expired - Lifetime JP2745575B2 (en) | 1988-10-25 | 1988-10-25 | Manufacturing method of electrode foil for aluminum electrolytic capacitor |
Country Status (1)
Country | Link |
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JP (1) | JP2745575B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001102271A (en) * | 1999-09-29 | 2001-04-13 | Nippon Light Metal Co Ltd | Aluminum alloy foil for electrolytic capacitor |
KR100361643B1 (en) * | 2000-01-13 | 2002-11-21 | 한국과학기술원 | Preparing Method for Anode Electrode for High Volt Electrolytic Capacitor |
-
1988
- 1988-10-25 JP JP26845288A patent/JP2745575B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001102271A (en) * | 1999-09-29 | 2001-04-13 | Nippon Light Metal Co Ltd | Aluminum alloy foil for electrolytic capacitor |
KR100361643B1 (en) * | 2000-01-13 | 2002-11-21 | 한국과학기술원 | Preparing Method for Anode Electrode for High Volt Electrolytic Capacitor |
Also Published As
Publication number | Publication date |
---|---|
JP2745575B2 (en) | 1998-04-28 |
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