JP2638038B2 - Manufacturing method of electrode foil for aluminum electrolytic capacitor - Google Patents

Manufacturing method of electrode foil for aluminum electrolytic capacitor

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Publication number
JP2638038B2
JP2638038B2 JP3808888A JP3808888A JP2638038B2 JP 2638038 B2 JP2638038 B2 JP 2638038B2 JP 3808888 A JP3808888 A JP 3808888A JP 3808888 A JP3808888 A JP 3808888A JP 2638038 B2 JP2638038 B2 JP 2638038B2
Authority
JP
Japan
Prior art keywords
etching
acid
stage
aqueous solution
electrode foil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3808888A
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Japanese (ja)
Other versions
JPH01212423A (en
Inventor
哲夫 園田
克典 鈴木
隆雄 川口
涼一 島谷
信義 神崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3808888A priority Critical patent/JP2638038B2/en
Publication of JPH01212423A publication Critical patent/JPH01212423A/en
Application granted granted Critical
Publication of JP2638038B2 publication Critical patent/JP2638038B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 産業上の利用の分野 本発明はアルミ電解コンデンサ用電極箔の製造方法に
関するものである。
Description: FIELD OF THE INVENTION The present invention relates to a method for producing an electrode foil for an aluminum electrolytic capacitor.

従来の技術 従来、アルミ電解コンデンサ用電極箔は、コンデンサ
の小形化,低価格化を図るために、電極体となるアルミ
ニウム箔を電気化学的、あるいは化学的にエッチング処
理して表面積を拡大したものを使用している。
2. Description of the Related Art Conventionally, electrode foils for aluminum electrolytic capacitors have been obtained by electrochemically or chemically etching an aluminum foil serving as an electrode body to increase the surface area in order to reduce the size and cost of the capacitor. You are using

発明が解決しようとする課題 このアルミニウム電極箔の表面積を拡大するために種
々の方法が研究されているが、アルミニウム電極箔の機
械的強度を保持したまま表面積を拡大することは非常に
困難であった。すなわち、従来のエッチング技術では、
一般的に表面積を拡大するためにエッチング孔の密度を
増大させようとすると、同時にアルミニウム電極箔の表
面溶解も進行して期待出来る程表面積が増大しないばか
りか、アルミニウム電極箔の機械的強度も損なわれると
いう問題があった。
Problems to be Solved by the Invention Various methods have been studied to increase the surface area of this aluminum electrode foil, but it is very difficult to increase the surface area while maintaining the mechanical strength of the aluminum electrode foil. Was. That is, in the conventional etching technology,
In general, when an attempt is made to increase the density of etching holes to increase the surface area, the surface of the aluminum electrode foil also dissolves at the same time, so that not only does the surface area not increase as much as expected, but also the mechanical strength of the aluminum electrode foil is impaired. There was a problem that was.

本発明は、上記の問題点を解決するもので、アルミニ
ウム電極箔の機械的強度を保持しつつ、エッチング孔の
密度を増大させ、表面積を拡大出来るアルミ電解コンデ
ンサ用電極箔の製造方法を提供するものである。
The present invention solves the above problems, and provides a method for manufacturing an electrode foil for an aluminum electrolytic capacitor that can increase the density of etching holes and increase the surface area while maintaining the mechanical strength of the aluminum electrode foil. Things.

課題を解決するための手段 このような従来の問題点を解決するために本発明は、
塩化カリウム,塩化ナトリウム,塩化アンモニウムのう
ち少なくとも1種を0.1〜10%含む水溶液中で直流エッ
チングする第1段エッチング工程と、塩酸2〜15%に硫
酸,蓚酸,リン酸からなる多孔質皮膜生成酸のうち少な
くとも1種を5〜35%添加した水溶液中で直流エッチン
グする第2段エッチング工程とから構成するものであ
る。
Means for Solving the Problems In order to solve such conventional problems, the present invention provides
A first-stage etching step in which DC etching is performed in an aqueous solution containing 0.1 to 10% of at least one of potassium chloride, sodium chloride, and ammonium chloride, and formation of a porous film including sulfuric acid, oxalic acid, and phosphoric acid in 2 to 15% of hydrochloric acid A second-stage etching step in which DC etching is performed in an aqueous solution to which at least one kind of acid is added in an amount of 5 to 35%.

作 用 この様な本発明の構成によれば、第1段エッチングに
塩化カリウム,塩化ナトリウム,塩化アンモニウムの中
性塩のうち少なくとも1種類を含む水溶液を用いている
ため、アルミニウム箔表面の化学的に活性な部分、すな
わち表面酸化皮膜の欠陥部等からまずエッチング孔が発
生する。続いて行なう第2段エッチングでは塩酸に、硫
酸,蓚酸,リン酸からなる多孔質皮膜生成酸のうち少な
くとも1種類を添加した水溶液を用いているため、第1
段エッチング孔が発生しなかった比較的欠陥部の少ない
表面にまず多孔質皮膜が生成し、その孔の部分を塩素イ
オンが侵食して更に多数のエッチング孔が発生する。そ
のため、表面溶解が少なく機械的強度を保持したまま、
エッチング孔を高密度でかつ均一な分布で発生させるこ
とが出来る。
According to the structure of the present invention, since the aqueous solution containing at least one of potassium chloride, sodium chloride, and neutral salt of ammonium chloride is used in the first stage etching, chemical etching of the aluminum foil surface is prevented. First, an etching hole is generated from an active portion, that is, a defective portion of the surface oxide film. In the subsequent second-stage etching, an aqueous solution obtained by adding at least one of a porous film-forming acid composed of sulfuric acid, oxalic acid and phosphoric acid to hydrochloric acid is used.
First, a porous film is formed on the surface having relatively few defective portions where the step etching holes are not generated, and the holes are eroded by chlorine ions to generate more etching holes. Therefore, while maintaining the mechanical strength with little surface dissolution,
Etching holes can be generated with high density and uniform distribution.

実施例 以下、本発明の実施例につき説明する。Examples Hereinafter, examples of the present invention will be described.

第1段エッチング工程,第2段エッチング工程につき
それぞれ具体的なエッチング条件を記述する。
Specific etching conditions are described for each of the first-stage etching process and the second-stage etching process.

第1段エッチング工程 エッチング孔を高密度かつ均一に生成させるために、
塩化カリウム,塩化ナトリウム,塩化アンモニウムのう
ちの少なくとも1種類を含む水溶液を用いた直流エッチ
ングが必要である。
First-stage etching process In order to generate etching holes with high density and uniformity,
DC etching using an aqueous solution containing at least one of potassium chloride, sodium chloride and ammonium chloride is required.

前述のいずれの中性塩の水溶液の場合でも、その濃度
が0.1%未満ではエッチング効果が小さく、10%を超え
ると表面の全面溶解が起こる。従って、0.1%〜10%の
範囲内で、特に1〜5%が好ましい。この様な好適範囲
内では、表面溶解をほとんど起こすことなく高密度かつ
均一なエッチング孔を発生させることが出来る。エッチ
ング液温も重要な影響を及ぼし、50℃未満ではエッチン
グ効果が小さく、100℃を超えると表面の全面溶解が起
こる。従って50〜100℃の範囲内で、特に70〜90℃が好
ましい。
In any of the above-mentioned aqueous solutions of neutral salts, if the concentration is less than 0.1%, the etching effect is small, and if it exceeds 10%, the entire surface is dissolved. Therefore, it is preferably in the range of 0.1% to 10%, particularly preferably 1% to 5%. Within such a preferable range, a high-density and uniform etching hole can be generated with almost no surface melting. The temperature of the etching solution also has an important effect. If the temperature is lower than 50 ° C., the etching effect is small. Therefore, the temperature is preferably in the range of 50 to 100 ° C, particularly 70 to 90 ° C.

また、電流密度は5A/dm2未満ではエッチング効果が小
さく、70A/dm2を超えると表面の全面溶解が起こる。従
って5〜70A/dm2の範囲内で、特に8〜30A/dm2が好まし
い。
When the current density is less than 5 A / dm 2 , the etching effect is small, and when the current density exceeds 70 A / dm 2 , the entire surface is dissolved. Thus within the scope of 5~70A / dm 2, in particular 8~30A / dm 2 is preferred.

第2段エッチング工程 表面溶解を抑制しながら、更にエッチング孔を発生、
増加させるために塩酸に硫酸,蓚酸,リン酸からなる多
孔質皮膜生成酸のうち少なくとも1種類を添加した水溶
液を用いた直流エッチングが必要である。塩酸濃度は2
%未満であるとエッチング効果が小さく、15%を超える
と表面の全面溶解が起こる。従って2〜15%の範囲内
で、特に3〜8%が好ましい。多孔質皮膜を生成し得る
酸の添加量については、硫酸,蓚酸,リン酸のいずれの
場合も5%未満であると多孔質皮膜の生成が不充分であ
り、35%を超えると皮膜生成反応よりむしろ溶解反応が
強くなって表面の全面溶解が起こる。従って5〜35%の
範囲内で、特に15〜25%が好ましい。この様な好適範囲
内では高密度かつ均一な孔を持つ多孔質皮膜がアルミ箔
表面に生成し、その孔の部分を塩素イオンが侵食してエ
ッチング孔が形成されるが、一方孔以外の部分は皮膜で
覆われているから表面溶解が抑制され、結果的に第1段
エッチングで出来たエッチング孔を破壊することなし
に、新たに均一なエッチング孔を発生させることが出来
る。
Second-stage etching process Further etching holes are generated while suppressing surface dissolution,
In order to increase the amount, direct current etching using an aqueous solution in which at least one of a porous film-forming acid composed of sulfuric acid, oxalic acid, and phosphoric acid is added to hydrochloric acid is required. Hydrochloric acid concentration is 2
%, The etching effect is small, and if it exceeds 15%, the entire surface is dissolved. Therefore, within the range of 2 to 15%, particularly 3 to 8% is preferable. Regarding the amount of acid that can form the porous film, if the amount of sulfuric acid, oxalic acid, or phosphoric acid is less than 5%, the formation of the porous film is insufficient. Rather, the dissolution reaction becomes stronger and the entire surface is dissolved. Therefore, within the range of 5 to 35%, particularly 15 to 25% is preferable. Within such a preferred range, a porous film having high density and uniform pores is formed on the surface of the aluminum foil, and the pores are eroded by chlorine ions to form etching holes. Since the surface is covered with the film, dissolution of the surface is suppressed, and as a result, a new uniform etching hole can be generated without destroying the etching hole formed by the first-stage etching.

第1段エッチングと同様の理由から液温は50〜100℃
の範囲が良く、特に70〜90℃が好ましい。
The liquid temperature is 50-100 ℃ for the same reason as the first stage etching
Is good, and 70 to 90 ° C. is particularly preferable.

また電流密度についても、第1段エッチングと同様5
〜70A/dm2の範囲が良いが、特に10〜40A/dm2が好まし
い。
In addition, the current density was 5 times as in the first stage etching.
~70A / dm 2 ranges good, especially 10~40A / dm 2 is preferred.

以下、比較例とともに本発明の具体的な実施例を示
す。
Hereinafter, specific examples of the present invention will be described together with comparative examples.

ただし、試料のアルミニウム箔は純度99.99%、厚さ1
00μmを焼鈍したものを用いた。
However, the aluminum foil of the sample has a purity of 99.99% and a thickness of 1
What was annealed at 00 μm was used.

(比較例1) 第1段エッチングを塩酸5%に硫酸25%を添加した液
温80℃の水溶液で電流密度30A/dm2の直流電流を120秒印
加して行なった後、第2段エッチングを塩酸7%に蓚酸
0.1%を添加した液温90℃の水溶液で電流密度10A/dm2
直流電流を380秒印加して行った。
(Comparative Example 1) The first-stage etching was performed by applying a direct current having a current density of 30 A / dm 2 for 120 seconds with an aqueous solution at a liquid temperature of 80 ° C in which 5% of hydrochloric acid and 25% of sulfuric acid were added, followed by the second-stage etching Oxalic acid in hydrochloric acid 7%
A direct current having a current density of 10 A / dm 2 was applied for 380 seconds using an aqueous solution at a liquid temperature of 90 ° C. to which 0.1% was added.

(比較例2) 第1段エッチングを塩化ナトリウム4%、液温80℃の
水溶液で電流密度15A/dm2の直流電流を240秒印加して行
った後、第2段エッチングを塩酸7%に蓚酸0.1%を添
加した液温90℃の水溶液で、電流密度10A/dm2の直流電
流を380秒印加して行った。
(Comparative Example 2) The first-stage etching was performed by applying a direct current having a current density of 15 A / dm 2 for 240 seconds using an aqueous solution of 4% sodium chloride and a liquid temperature of 80 ° C, and then the second-stage etching was performed to 7% hydrochloric acid. The test was performed by applying a direct current having a current density of 10 A / dm 2 for 380 seconds with an aqueous solution at a liquid temperature of 90 ° C. to which 0.1% of oxalic acid was added.

(実施例) 第1段エッチングを塩化ナトリウム4%、液温80℃の
水溶液で電流密度15A/dm2の直流電流を240秒印加して行
った後、第2段エッチングを塩酸5%に硫酸25%を添加
した液温80℃の水溶液で、電流密度30A/dm2の直流電流
を120秒印加して行った。
(Example) First stage etching was performed by applying a direct current having a current density of 15 A / dm 2 for 240 seconds with an aqueous solution of sodium chloride 4% and a liquid temperature of 80 ° C., and then the second stage etching was performed using 5% hydrochloric acid and sulfuric acid. This was performed by applying a direct current having a current density of 30 A / dm 2 for 120 seconds using an aqueous solution at a liquid temperature of 80 ° C. to which 25% was added.

上記3例のエッチング箔をホウ酸系水溶液で370V化成
した後の静電容量と折り曲げ強度(1.0R,200g荷重,折
曲げ90゜により1往復で1回とする。)の測定した結果
を表−1に示す。
Table 3 shows the results of measuring the capacitance and bending strength of the etched foils of the above three examples after forming them at 370 V with a boric acid aqueous solution (1.0 R, 200 g load, bending 90 °, one round trip). -1.

発明の効果 以上のように本発明によれば、静電容量が大きく、か
つ機械的強度にも優れたアルミ電解コンデンサ用電極箔
を得ることが出来る。
Effects of the Invention As described above, according to the present invention, an electrode foil for an aluminum electrolytic capacitor having a large capacitance and excellent mechanical strength can be obtained.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 島谷 涼一 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (72)発明者 神崎 信義 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (56)参考文献 特開 昭57−66615(JP,A) 特開 昭60−63916(JP,A) 特開 昭60−219721(JP,A) 特開 平1−212428(JP,A) ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Ryoichi Shimatani 1006 Kazuma Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. In-company (56) References JP-A-57-66615 (JP, A) JP-A-60-63916 (JP, A) JP-A-60-219721 (JP, A) JP-A-1-212428 (JP, A) )

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】エッチング処理を第1段,第2段の2段階
に分けて行うものとし、第1段エッチングとして塩化カ
リウム,塩化ナトリウム,塩化アンモニウムのうち少な
くとも1種を0.1〜10%含む水溶液中で直流エッチング
し、第2段エッチングとして塩酸2〜15%に硫酸,蓚
酸,リン酸からなる多孔質皮膜生成酸のうち少なくとも
1種を5〜35%添加した水溶液中で直流エッチングする
ことを特徴とするアルミ電解コンデンサ用電極箔の製造
方法。
An etching treatment is performed in two stages, a first stage and a second stage. An aqueous solution containing 0.1 to 10% of at least one of potassium chloride, sodium chloride and ammonium chloride as the first stage etching. DC etching in a second step, and DC etching in an aqueous solution obtained by adding at least one of a porous film forming acid consisting of sulfuric acid, oxalic acid, and phosphoric acid to 2 to 15% of hydrochloric acid and 5 to 35% as a second stage etching. Characteristic method for manufacturing electrode foil for aluminum electrolytic capacitors.
【請求項2】エッチング液温が何れも50〜100℃である
請求項1記載のアルミ電解コンデンサ用電極箔の製造方
法。
2. The method according to claim 1, wherein the temperature of the etching solution is 50 to 100 ° C.
【請求項3】電流密度が何れも5〜70A/dm2である請求
項1記載のアルミ電解コンデンサ用電極箔の製造方法。
3. The method according to claim 1, wherein the current density is 5 to 70 A / dm 2 .
JP3808888A 1988-02-19 1988-02-19 Manufacturing method of electrode foil for aluminum electrolytic capacitor Expired - Lifetime JP2638038B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3808888A JP2638038B2 (en) 1988-02-19 1988-02-19 Manufacturing method of electrode foil for aluminum electrolytic capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3808888A JP2638038B2 (en) 1988-02-19 1988-02-19 Manufacturing method of electrode foil for aluminum electrolytic capacitor

Publications (2)

Publication Number Publication Date
JPH01212423A JPH01212423A (en) 1989-08-25
JP2638038B2 true JP2638038B2 (en) 1997-08-06

Family

ID=12515723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3808888A Expired - Lifetime JP2638038B2 (en) 1988-02-19 1988-02-19 Manufacturing method of electrode foil for aluminum electrolytic capacitor

Country Status (1)

Country Link
JP (1) JP2638038B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100361643B1 (en) * 2000-01-13 2002-11-21 한국과학기술원 Preparing Method for Anode Electrode for High Volt Electrolytic Capacitor
CN107591247A (en) * 2017-08-30 2018-01-16 南通海星电子股份有限公司 A kind of low contact resistance low-voltage aluminum electrolytic capacitor electrode foil corrosion method

Also Published As

Publication number Publication date
JPH01212423A (en) 1989-08-25

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