JPH021119B2 - - Google Patents

Info

Publication number
JPH021119B2
JPH021119B2 JP57031090A JP3109082A JPH021119B2 JP H021119 B2 JPH021119 B2 JP H021119B2 JP 57031090 A JP57031090 A JP 57031090A JP 3109082 A JP3109082 A JP 3109082A JP H021119 B2 JPH021119 B2 JP H021119B2
Authority
JP
Japan
Prior art keywords
crystal
silicon crystal
silicon
heat treatment
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57031090A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58151393A (ja
Inventor
Kunihiko Wada
Masamichi Yoshida
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3109082A priority Critical patent/JPS58151393A/ja
Publication of JPS58151393A publication Critical patent/JPS58151393A/ja
Publication of JPH021119B2 publication Critical patent/JPH021119B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP3109082A 1982-02-26 1982-02-26 シリコン結晶の製造方法 Granted JPS58151393A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3109082A JPS58151393A (ja) 1982-02-26 1982-02-26 シリコン結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3109082A JPS58151393A (ja) 1982-02-26 1982-02-26 シリコン結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS58151393A JPS58151393A (ja) 1983-09-08
JPH021119B2 true JPH021119B2 (cs) 1990-01-10

Family

ID=12321702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3109082A Granted JPS58151393A (ja) 1982-02-26 1982-02-26 シリコン結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS58151393A (cs)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61242984A (ja) * 1985-04-19 1986-10-29 Shinetsu Sekiei Kk シリコン単結晶引上げ用ルツボ
EP3635768A4 (en) * 2017-05-10 2021-02-24 McMahon, Shane Thomas THIN LAYER CRYSTALLIZATION PROCESS

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130897A (en) * 1979-03-30 1980-10-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Silicon single crystal
JPS5645894A (en) * 1979-09-25 1981-04-25 Nippon Telegr & Teleph Corp <Ntt> Reducing method for defect of silicon single crystal

Also Published As

Publication number Publication date
JPS58151393A (ja) 1983-09-08

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