JPH02105332A - Production of magnetic recording medium - Google Patents

Production of magnetic recording medium

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Publication number
JPH02105332A
JPH02105332A JP25696788A JP25696788A JPH02105332A JP H02105332 A JPH02105332 A JP H02105332A JP 25696788 A JP25696788 A JP 25696788A JP 25696788 A JP25696788 A JP 25696788A JP H02105332 A JPH02105332 A JP H02105332A
Authority
JP
Japan
Prior art keywords
film
coercive force
magnetic recording
recording medium
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25696788A
Other languages
Japanese (ja)
Other versions
JP2668994B2 (en
Inventor
Hideki Tamai
秀樹 玉井
Takayuki Takeda
武田 隆幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
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Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63256967A priority Critical patent/JP2668994B2/en
Publication of JPH02105332A publication Critical patent/JPH02105332A/en
Application granted granted Critical
Publication of JP2668994B2 publication Critical patent/JP2668994B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To increase reproduced output and recording density and to facilitate the production of a desired low-coercive force layer by providing the low- coercive force layer to the lower layer part of a perpendicular magnetic anisotropy film and providing a high-coercive force layer to the upper layer part. CONSTITUTION:Electric discharge is generated in gaseous Ar contg. a small amt. of an additive gas and the film having the low coercive force in a perpendicular direction is formed in an initial period at the time of forming the perpendicular anisotropy film by a sputtering method on a base film 3. The discharge is generated only in the gaseous Ar and the film having the high coercive force in the perpendicular direction is formed. The magnetic recording medium which is lower in coercive force in the lower layer part than in the upper layer part is obtd. in this way.

Description

【発明の詳細な説明】 し産業上の利用分野] 本発明は磁気テープ、磁気ディスク等の磁気記録媒体の
製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing magnetic recording media such as magnetic tapes and magnetic disks.

[従来の技術] 磁気記録技術においては、近年になって、従来より実用
化されている長手磁気記録方式を越える高密度記録技術
として垂直磁気記録方式が提案され、精力的に研究開発
か進められている。
[Prior Art] In the area of magnetic recording technology, in recent years, perpendicular magnetic recording has been proposed as a high-density recording technology that exceeds the longitudinal magnetic recording that has been put into practical use, and research and development has been carried out vigorously. ing.

この垂直磁気記録を実現するには、磁気記録媒体は、基
材上に形成された磁性膜面に対して垂直り向に記録され
た磁化を安定に存在させることが必要である。そこで磁
気記録媒体は、磁化を安定に存在させるために垂直磁気
異方性を高めると共に、できるだけ垂直方向の保磁力を
高めなCブればならない。
In order to realize this perpendicular magnetic recording, the magnetic recording medium must stably have magnetization recorded in a direction perpendicular to the surface of the magnetic film formed on the base material. Therefore, in order to maintain stable magnetization, the magnetic recording medium must have high perpendicular magnetic anisotropy and must have as high a coercive force in the perpendicular direction as possible.

[弁明か解決しようとする課題] 一方、磁気ヘッドから発生される記録磁界の強鳴は、磁
気記録媒体の表面から膜厚深さ方向に従って減少する。
[Explanation or Problem to be Solved] On the other hand, the intensity of the recording magnetic field generated by the magnetic head decreases from the surface of the magnetic recording medium in the direction of the film thickness.

従って、従来の磁気記録媒体のように垂直方向の保磁力
が膜厚の方向に−様な場合、その保磁力の増加に従って
再生出力は増加するが、ある一定の保磁力で極大値を示
し、その後は減少覆ル(金属表面技術、p、28〜37
.  VOl、35゜1984)。これは、前述したよ
うに磁気ヘッドから発生される記録磁界の強度が、磁気
記録媒体の表面から膜厚方向に従い減少するので、ある
一定の保磁力までは膜全体が記録されるが、さらに高い
保磁力になると磁気記録媒体の下層部では記録磁界が低
いので十分記録できないからである。
Therefore, when the perpendicular coercive force varies in the film thickness direction as in conventional magnetic recording media, the reproduction output increases as the coercive force increases, but reaches a maximum value at a certain coercive force. Then there is a reduction in covering (metal surface technology, p. 28-37).
.. VOl, 35°1984). This is because, as mentioned above, the strength of the recording magnetic field generated by the magnetic head decreases from the surface of the magnetic recording medium in the film thickness direction, so the entire film can be recorded up to a certain coercive force, but even higher This is because when the coercive force is reached, sufficient recording is not possible in the lower layer of the magnetic recording medium because the recording magnetic field is low.

本発明の目的は、上記したような従来の問題点を解決し
、再生出力を増加させると共に、記録密度を改善した磁
気記録媒体の製造方法を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a magnetic recording medium that solves the conventional problems as described above, increases reproduction output, and improves recording density.

[課題を解決するための手段] 本発明は、基材上にスパッタ法により垂直磁気異方性膜
を形成することよりなる磁気記録媒体の製造方法におい
て、垂直磁気異方性膜の形成初期においては少量の添加
ガスを含むArガス中で放電させ、その後、A rガス
のみの中で放電させて該垂直磁気異方性膜を形成するこ
とを特徴と覆る磁気記録媒体の製造方法である。
[Means for Solving the Problems] The present invention provides a method for manufacturing a magnetic recording medium comprising forming a perpendicular magnetic anisotropic film on a base material by sputtering, in which the perpendicular magnetic anisotropic film is formed at an early stage. is a method for producing a magnetic recording medium characterized by forming the perpendicular magnetic anisotropic film by causing discharge in Ar gas containing a small amount of additive gas, and then in Ar gas alone.

本発明において、垂直磁気異方性膜はCO系合金膜であ
ることを好適とし、また添加ガスは窒素または酸素であ
ることを好適とする。
In the present invention, the perpendicular magnetic anisotropy film is preferably a CO-based alloy film, and the additive gas is preferably nitrogen or oxygen.

[作用] 基材上にスパッタ法により垂直異方性膜を形成覆る際に
、その初期においては少量の添加ガスを含むArカス中
で放電させると、垂直方向の保磁力の低い膜が形成され
る。その後、Arカスのみの中で放電させると、垂直方
向の保磁力の高い膜か形成される。以上のことから、容
易に磁気記録媒体の下層部か上層部に比べて低保磁力と
なる磁気記録媒体か製造される。
[Function] When forming and covering a vertically anisotropic film on a substrate by sputtering, if discharge is performed in Ar gas containing a small amount of added gas at the initial stage, a film with low coercive force in the vertical direction is formed. Ru. Thereafter, by discharging only in Ar scum, a film with high coercive force in the vertical direction is formed. From the above, it is easy to manufacture a magnetic recording medium that has a lower coercive force than the lower or upper layer of the magnetic recording medium.

[実施例] 次に、本発明の実施例について図面を参照して詳細に説
明する。
[Example] Next, an example of the present invention will be described in detail with reference to the drawings.

第1図は本実施例に使用した連続成膜用スパッタ装置の
概略構成図である。同図において、1は真空チャンバ、
2は巻取りリール、3は基材(ベスフィルム)、4は基
板の走行方向、5は中間[]1−ル、6は巻出しリール
、7はマスク、8はタグットをぞれそれ示している。
FIG. 1 is a schematic diagram of a sputtering apparatus for continuous film formation used in this example. In the figure, 1 is a vacuum chamber;
2 is a take-up reel, 3 is a base material (base film), 4 is a running direction of the substrate, 5 is an intermediate []1-ru, 6 is an unwinding reel, 7 is a mask, and 8 is a taget. There is.

ます、垂直方向の低保磁力の作製条件を得るために、垂
直方向の保磁力の添加ガス依存性を調べた。添加ガスと
しては、酸素(02)および窒素(N2)を用い、その
成膜法は次の通りとした。
First, in order to obtain the manufacturing conditions for low coercive force in the vertical direction, we investigated the dependence of the vertical coercive force on the added gas. Oxygen (02) and nitrogen (N2) were used as additive gases, and the film formation method was as follows.

ターゲット8はφ8インチCoCr (Cr 18wt
%)合金ターゲット上にTaチップを配置したものであ
る。ベースフィルム3はポリイミドフィルムを用い、真
空チャンバ1にセット後、到達真空度1XIO−4pa
以下まで排気した。次に中間ロル5の温度を約100℃
に設定し、巻取りリール2および巻出しリール6を用い
、ベースフィルム3を1往復巻き戻しを行い、フィルム
に吸着している残留ガス(H20など)のガス出しを行
った。
Target 8 is φ8 inch CoCr (Cr 18wt
%) A Ta chip is placed on an alloy target. The base film 3 uses a polyimide film, and after setting it in the vacuum chamber 1, the ultimate vacuum degree is 1XIO-4pa.
Exhausted to below. Next, set the temperature of intermediate roll 5 to approximately 100°C.
The base film 3 was rewound back and forth once using the take-up reel 2 and the unwind reel 6, and residual gas (such as H20) adsorbed on the film was vented.

その後、再び1XIO−4Pa以下の真空度において、
Arガスと種々の添加量のガス(窒素、酸素)を導入し
、投入電力1kW、全ガス圧力1 mrorrのスパッ
タ条件で中間ロール5を回転させ、フィルムを矢印4の
方向に走行させながら連続的に膜厚0.1期で成膜した
。なあ、成膜中の中間ロール5の温度は約100℃と一
定(した。このようにして作製した膜について撮動試料
型磁力計により磁気特性を調べた。
After that, again at a vacuum level of 1XIO-4Pa or less,
Ar gas and various additive amounts of gases (nitrogen, oxygen) were introduced, and the intermediate roll 5 was rotated under sputtering conditions of input power 1 kW and total gas pressure 1 mrorr, and the film was continuously run while running in the direction of arrow 4. A film was formed at a film thickness of 0.1 stage. The temperature of the intermediate roll 5 during film formation was kept constant at about 100° C. The magnetic properties of the film thus produced were examined using a moving sample magnetometer.

その結果を第2図に示す。同図は垂直方向の保磁力H6
土の添加カス(窒素、酸素)分圧PN2、Po2依存性
を示したものである。本結果から窒素弁1)および酸素
弁IA−かそれぞれ2 X 10−6 rorr以上お
よび6 x 10−6 ’rorr以上において垂直方
向の保磁力が減少することかわかった。従って、第2図
を参考にして添加ガスの添加量を決め、任意の低保磁力
のものが作製できる。
The results are shown in FIG. The figure shows vertical coercive force H6
This figure shows the dependence of soil added residue (nitrogen, oxygen) partial pressure PN2 and Po2. From the present results, it was found that the vertical coercive force of the nitrogen valve 1) and the oxygen valve IA- decreased at 2 x 10-6 rorr or more and 6 x 10-6' rorr or more, respectively. Therefore, by determining the amount of additive gas to be added with reference to FIG. 2, it is possible to fabricate a material with an arbitrary low coercive force.

次に、本発明の磁気記録媒体の製造方法について述べる
。ます、添加カスとして窒素を用いた実施例について述
べる。成膜法は次の通りである。
Next, a method for manufacturing the magnetic recording medium of the present invention will be described. First, an example using nitrogen as the additive residue will be described. The film formation method is as follows.

なおフィルムのガス出しまでは上記と同様であるので略
す。
Note that the process up to gas release from the film is the same as above, so it is omitted here.

フィルムガス出し後、再び到達真空度を1xlO−4P
a以下に排気し、Arガスと添加量6 X 10−6 
Torrの窒素ガスを導入し、投入電力1kW、全ガス
圧力1mTorrのスパッタ条件で中間[コール5を回
転させ、フィルム3を矢印4の方向に走行させながら連
続的に膜厚0.1卯成膜した。
After releasing the film gas, reduce the final vacuum to 1xlO-4P again.
Evacuate to below a, add Ar gas and add amount 6 x 10-6
Torr of nitrogen gas was introduced, and a film of 0.1 μm thick was continuously formed while rotating the coal 5 and running the film 3 in the direction of arrow 4 under sputtering conditions of input power 1 kW and total gas pressure 1 mTorr. did.

巻取りリール2および巻出しリール6を用いてベスフィ
ルム3の巻き戻しを行い、再び1×10″4Pa以下に
排気後、今度はArガスのみで同様にして0.2珈成膜
し、全体の膜厚を0.31mとした。
The base film 3 is rewound using the take-up reel 2 and the unwind reel 6, and after being evacuated again to 1×10″4 Pa or less, a film of 0.2 cm is formed in the same manner using only Ar gas, and the entire film is The film thickness was set to 0.31 m.

なお、成膜中の中間口〜ル5の温度は約100℃と一定
にし、また中間ロール5の回転速度を変えて目的の膜厚
を得た。このようにして作製したCoCrTa膜の垂直
方向の保磁力は膜厚0.1/fflまでは約600Q 
eであり、それ以上の膜厚では約1.3000eとなっ
て所望の下層部では低保磁力の媒体が得られた。また比
較のために従来と同様にArガスのみで0.3膜厚のC
0CrTa膜も作製した。この垂直方向の保磁力は膜厚
に依存せず約L 3000 eであった。
The temperature of the intermediate roll 5 during film formation was kept constant at about 100°C, and the rotational speed of the intermediate roll 5 was varied to obtain the desired film thickness. The vertical coercive force of the CoCrTa film produced in this way is approximately 600Q up to a film thickness of 0.1/ffl.
The film thickness was approximately 1.3000 e, and a medium with a low coercive force was obtained in the desired lower layer portion. Also, for comparison, as in the conventional case, a C film with a thickness of 0.3 using only Ar gas
A 0CrTa film was also produced. This perpendicular coercive force was approximately L 3000 e, independent of film thickness.

以上のように本発明の製造方法により作製したC0Cr
−[a膜および従来と同様の方法で作製したCoCrT
a膜についてそれぞれ記録再生特性を調べた。その結果
を第3図に示す。なお、ここで用いたヘッドはギャップ
長0.3庫のものであり、記録再生特性は再生出力V(
相対値)の記録密度り依存性を示したものである。本結
果から本発明の製造方法により作製したCoCrTa膜
が再生出力、記録密度共に従来の方法で製造した膜に比
べて改善されていることがわかった。
C0Cr produced by the production method of the present invention as described above
- [a film and CoCrT prepared by the same method as before
The recording and reproducing characteristics of each of the a-films were investigated. The results are shown in FIG. The head used here has a gap length of 0.3, and the recording and playback characteristics are as follows: playback output V (
This figure shows the dependence of the relative value on the recording density. The results show that the CoCrTa film produced by the production method of the present invention has improved reproduction output and recording density compared to films produced by the conventional method.

次に添加ガスとして酸素を用いた実施例についてjホペ
る。酸素の場合、第2図から上記窒素と同様な低保磁力
を得るために添加する量は2X10−510「rとし、
他のスパッタ条件は同様に作製した。
Next, an example using oxygen as the additive gas will be described. In the case of oxygen, from Figure 2, the amount added to obtain the same low coercive force as nitrogen is 2X10-510 "r,"
The other sputtering conditions were the same.

ぞの結果、第3図と同様に再生出力、記録密度が改善さ
れることかわかった。
As a result, it was found that the reproduction output and recording density were improved as shown in FIG.

上記の実施例において、ターゲット8はC0Cr合金タ
ーゲット上にTaチップを配置した複合ターゲットを用
いたが、000118合金ターゲツト等いずれのターゲ
ットでもよく、Cr粗成も18 wt%以外のものでも
よい。ベースフィルム3はポリイミドフィルムを用いた
が、ポリアミドフィルム、ポリエステルフィルム等信の
有機フィルムでもよい。また、スパッタ中において、投
入電力および全ガス圧はそれぞれ1.OkW、1mTo
rrとしたが他の値でもよく、中間ロール5の温度も約
100℃と設定したが他の温度でもよい。
In the above embodiment, the target 8 was a composite target in which Ta chips were placed on a C0Cr alloy target, but it may be any target such as a 000118 alloy target, and the Cr content may be other than 18 wt%. Although a polyimide film is used as the base film 3, it may be an organic film such as a polyamide film or a polyester film. During sputtering, the input power and total gas pressure are each 1. OKW, 1mTo
Although rr was used, other values may be used, and the temperature of the intermediate roll 5 was also set at approximately 100°C, but other temperatures may be used.

ざらに、垂直磁気異方性膜の低保磁力層は、本実施例で
は一様の保磁力のものとしたが、垂直方向に連続的に、
あるいは段階的に保磁力が減少するようにしてもよく、
例えば膜の表面から順次、保磁力が減少するような構造
であってもよい。
Roughly speaking, the low coercive force layer of the perpendicular magnetic anisotropic film was made to have a uniform coercive force in this example, but it was made to have a uniform coercive force in the perpendicular direction.
Alternatively, the coercive force may be decreased in stages,
For example, the structure may be such that the coercive force decreases sequentially from the surface of the film.

−様の保磁力とする場合には、本実施例ではその膜厚を
0.1卯としたが、全膜厚の1/2程度以下であればい
かなる厚みであってもよく、全膜厚および膜表面の垂直
方向の保磁力も任意の値をとり得る。
In the case of a coercive force like -, the film thickness was set to 0.1 μm in this example, but any thickness may be used as long as it is about 1/2 or less of the total film thickness. The coercive force in the direction perpendicular to the film surface can also take any value.

また、本実施例では添加する窒素および酸素ガスはそれ
ぞれ5 X 10−6 Torrおよび2X1叶5 T
orrとしたが、第1図に示したように垂直方向の保磁
力の減少する他の圧力でもよい。さらにまた、本実施例
で連続成膜方式で媒体を作製したが、バッチ方式でもよ
く、その時基材3は上記有機フィルムの他、ガラス基板
、プラスチック基板、金属基板等でもよい。
In addition, in this example, the nitrogen and oxygen gases added were 5 x 10-6 Torr and 2 x 1 Torr, respectively.
orr, but other pressures that reduce the coercive force in the vertical direction as shown in FIG. 1 may be used. Furthermore, although the medium was produced by a continuous film forming method in this example, a batch method may also be used, in which case the base material 3 may be a glass substrate, a plastic substrate, a metal substrate, etc. in addition to the above-mentioned organic film.

さらに本実施例において、CoCrTa膜の作製にはR
Fマグネトロンスパッタ法を用いたが、「<[ニスバッ
タ払、DCスパッタ法、イオンビームスパッタ法、電子
ビーム蒸着法、抵抗加熱蒸着法、MBE法、CVD法、
メツキ法など従来公知のいずれのN膜形成技術も使用可
能である。また、本実施例では垂直磁気記録媒体として
C0Cr1’−a膜を用いたか、C0Cr膜等、他のC
o系合金膜あるいは他の金属膜でもよい。
Furthermore, in this example, R
F magnetron sputtering method was used, but "<[varnish batter removal, DC sputtering method, ion beam sputtering method, electron beam evaporation method, resistance heating evaporation method, MBE method, CVD method,
Any conventionally known N film forming technique such as plating method can be used. In addition, in this example, a C0Cr1'-a film was used as the perpendicular magnetic recording medium, or other C0Cr films such as a C0Cr film were used.
An o-based alloy film or other metal film may be used.

[発明の効果] 以上説明したように、本発明の製造方法により作製した
磁気記録媒体は、その垂直磁気異方性膜か下層部に低保
磁力層を持ち、上層部に高保磁力―を持つ構造を有して
いるので、従来に比べ、再生出力および記録密度が増加
する。また、低保磁力層については、添加ガスの添加量
により、任意の垂直方向の低保磁力が得られるので、所
望の低保磁力層が容易に作製可能である。
[Effects of the Invention] As explained above, the magnetic recording medium manufactured by the manufacturing method of the present invention has a low coercive force layer in the lower layer of the perpendicular magnetic anisotropic film and a high coercive force layer in the upper layer. structure, the reproduction output and recording density are increased compared to the conventional technology. Further, as for the low coercive force layer, a desired low coercive force layer can be easily produced because a low coercive force in any perpendicular direction can be obtained depending on the amount of additive gas added.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例で使用した連続成膜用スパッ
タ装置の概略構成図、第2図はC0CrTa膜について
垂直方向の保磁力H6土の添加ガス(酸素、窒素)分圧
依存性を示した図、第3図は本発明の方法によって得ら
れた磁気記録媒体についての再生出力V(相対値)の記
録密度り依存性を従来技術による場合と比較して示した
図である。 1・・・真空チャンバ    2・・・巻取りリール3
・・・基材(ベースフィルム) 4・・・走行方向      5・・・中間ロール6・
・・巻出しリール    7・・・マスク8・・・ター
ゲット
Fig. 1 is a schematic diagram of the sputtering apparatus for continuous film formation used in an embodiment of the present invention, and Fig. 2 shows the dependence of the vertical coercive force of H6 soil on the partial pressure of added gas (oxygen, nitrogen) for a C0CrTa film. FIG. 3 is a diagram illustrating the dependence of the reproduction output V (relative value) on the recording density for the magnetic recording medium obtained by the method of the present invention in comparison with that by the conventional technique. 1... Vacuum chamber 2... Take-up reel 3
... Base material (base film) 4 ... Running direction 5 ... Intermediate roll 6
...Unwinding reel 7...Mask 8...Target

Claims (3)

【特許請求の範囲】[Claims] (1)基材上にスパッタ法により垂直磁気異方性膜を形
成することよりなる磁気記録媒体の製造方法において、
垂直磁気異方性膜の形成初期においては少量の添加ガス
を含むArガス中で放電させ、その後、Arガスのみの
中で放電させて該垂直磁気異方性膜を形成することを特
徴とする磁気記録媒体の製造方法。
(1) A method for manufacturing a magnetic recording medium comprising forming a perpendicular magnetic anisotropic film on a base material by sputtering,
In the initial stage of forming the perpendicular magnetic anisotropic film, the perpendicular magnetic anisotropic film is formed by discharging in Ar gas containing a small amount of additive gas, and then discharging only in Ar gas. A method for manufacturing a magnetic recording medium.
(2)垂直磁気異方性膜がCo系合金膜である請求項(
1)記載の磁気記録媒体の製造方法。
(2) The perpendicular magnetic anisotropy film is a Co-based alloy film (
1) The method for manufacturing the magnetic recording medium described above.
(3)添加ガスが窒素または酸素である請求項(1)記
載の磁気記録媒体の製造方法。
(3) The method for manufacturing a magnetic recording medium according to claim (1), wherein the additive gas is nitrogen or oxygen.
JP63256967A 1988-10-14 1988-10-14 Manufacturing method of magnetic recording medium Expired - Lifetime JP2668994B2 (en)

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Application Number Priority Date Filing Date Title
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JPH02105332A true JPH02105332A (en) 1990-04-17
JP2668994B2 JP2668994B2 (en) 1997-10-27

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Country Link
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936326A (en) * 1982-08-23 1984-02-28 Fujitsu Ltd Vertically magnetized recording medium and its production
JPS61208623A (en) * 1985-03-13 1986-09-17 Toray Ind Inc Production of vertical magnetic recording medium
JPS62103851A (en) * 1985-10-31 1987-05-14 Toray Ind Inc Production of vertical magnetic recording medium
JPH01125723A (en) * 1987-11-11 1989-05-18 Toray Ind Inc Production of perpendicular magnetic recording medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936326A (en) * 1982-08-23 1984-02-28 Fujitsu Ltd Vertically magnetized recording medium and its production
JPS61208623A (en) * 1985-03-13 1986-09-17 Toray Ind Inc Production of vertical magnetic recording medium
JPS62103851A (en) * 1985-10-31 1987-05-14 Toray Ind Inc Production of vertical magnetic recording medium
JPH01125723A (en) * 1987-11-11 1989-05-18 Toray Ind Inc Production of perpendicular magnetic recording medium

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Publication number Publication date
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