JPH0183352U - - Google Patents

Info

Publication number
JPH0183352U
JPH0183352U JP1987180096U JP18009687U JPH0183352U JP H0183352 U JPH0183352 U JP H0183352U JP 1987180096 U JP1987180096 U JP 1987180096U JP 18009687 U JP18009687 U JP 18009687U JP H0183352 U JPH0183352 U JP H0183352U
Authority
JP
Japan
Prior art keywords
mosfet
solar cell
switching device
source
driving switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987180096U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987180096U priority Critical patent/JPH0183352U/ja
Publication of JPH0183352U publication Critical patent/JPH0183352U/ja
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Electronic Switches (AREA)

Description

【図面の簡単な説明】
第１図は本考案に係るスイツチング装置の等価
回路図、第２図は本考案の第１の実施例の構成図
、第３図は本考案の第２の実施例の構成図、第４
図は従来のＭＯＳＦＥＴを用いたスイツチング装
置の構成図、第５図は昇圧回路を用いた従来のＭ
ＯＳＦＥＴによるスイツチング装置の構成図であ
る。 １１：負荷、４０：ＭＯＳＦＥＴ、４１：高濃
度半導体領域、４２：低濃度エピタキシヤル層、
４３：ウエル領域、４４：ソース領域、４５：ウ
エル・コンタクト領域、４６：ソース電極、４７
：ゲート絶縁領域、４８：ドレイン電極、５０，
８０：多結晶シリコン太陽電池、５１，８１：ア
ノード領域、５２，８３：カソード領域、５３，
８４：カソード・コンタクト領域、６１：発光ダ
イオード、６２：発光ダイオード・バイアス用抵
抗、８２：低濃度多結晶シリコン領域。

Claims (1)

  1. 【実用新案登録請求の範囲】 ドレイン電極が電源に接続され、ソース電極が
    負荷を介して接地されるＭＯＳＦＥＴを備えた負
    荷駆動用スイツチング装置において、 前記ＭＯＳＦＥＴのゲート絶縁領域に形成され
    た太陽電池と、 該太陽電池に光を照射する発光素子とを具備し
    、太陽電池による起電力によりＭＯＳＦＥＴをタ
    ーンオンしてそのソース・ゲート間電圧を所定値
    に保持するようにしたことを特徴とするＭＯＳＦ
    ＥＴを用いた負荷駆動用スイツチング装置。
JP1987180096U 1987-11-25 1987-11-25 Pending JPH0183352U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987180096U JPH0183352U (ja) 1987-11-25 1987-11-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987180096U JPH0183352U (ja) 1987-11-25 1987-11-25

Publications (1)

Publication Number Publication Date
JPH0183352U true JPH0183352U (ja) 1989-06-02

Family

ID=31471627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987180096U Pending JPH0183352U (ja) 1987-11-25 1987-11-25

Country Status (1)

Country Link
JP (1) JPH0183352U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0463475A (ja) * 1990-07-03 1992-02-28 Toshiba Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0463475A (ja) * 1990-07-03 1992-02-28 Toshiba Corp 半導体装置

Similar Documents

Publication Publication Date Title
JPS553215A (en) Semiconductor switch circuit
JPH0183352U (ja)
JPS6439069A (en) Field-effect transistor
JPH0654796B2 (ja) 複合半導体装置
JPS5743455A (en) Complementary type semiconductor device
JPS6276557A (ja) 絶縁ゲ−ト型自己タ−ンオフ素子
JP2947592B2 (ja) 半導体装置
SE7905052L (sv) Effekttyristor, forfarande for dess framstellning samt anvendning av sadana tyristorer i stromriktarkopplingar
JPH0256438U (ja)
JPS6454765A (en) Semiconductor device
JPS6414960A (en) Semiconductor element
JPH0113232B2 (ja)
EP0237029A3 (en) A heterojunction field effect device operable at a high output current with a high withstand voltage
JPS5681970A (en) Semiconductor switching device
JPS54146545A (en) Constant current integrated circuit element
JPS62144357A (ja) スイツチング用半導体装置
JPH0936352A (ja) 半導体装置
JPH0513768A (ja) 絶縁ゲート型バイポーラトランジスタ
JPS551732A (en) Photo switch circuit
JPH01104050U (ja)
JP2687638B2 (ja) 半導体装置
JPH0225197U (ja)
JPH0221826U (ja)
JPS6397252U (ja)
JPS6322744U (ja)