JPH0158842B2 - - Google Patents
Info
- Publication number
- JPH0158842B2 JPH0158842B2 JP23421782A JP23421782A JPH0158842B2 JP H0158842 B2 JPH0158842 B2 JP H0158842B2 JP 23421782 A JP23421782 A JP 23421782A JP 23421782 A JP23421782 A JP 23421782A JP H0158842 B2 JPH0158842 B2 JP H0158842B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- carbon
- plate
- boron
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 32
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- 229910052796 boron Inorganic materials 0.000 claims description 25
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 229910052799 carbon Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 4
- 238000010292 electrical insulation Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 150000001638 boron Chemical class 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23421782A JPS58151001A (ja) | 1982-12-30 | 1982-12-30 | SiCサ−ミスタ素材とSiCサ−ミスタの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23421782A JPS58151001A (ja) | 1982-12-30 | 1982-12-30 | SiCサ−ミスタ素材とSiCサ−ミスタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58151001A JPS58151001A (ja) | 1983-09-08 |
JPH0158842B2 true JPH0158842B2 (fr) | 1989-12-13 |
Family
ID=16967528
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23421782A Granted JPS58151001A (ja) | 1982-12-30 | 1982-12-30 | SiCサ−ミスタ素材とSiCサ−ミスタの製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58151001A (fr) |
-
1982
- 1982-12-30 JP JP23421782A patent/JPS58151001A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58151001A (ja) | 1983-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6014073A (en) | Temperature sensor element, temperature sensor having the same and method for producing the same temperature sensor element | |
EP2721675B1 (fr) | Electrolyte solide pour batterie au lithium, comprenant au moins une zone en matériau vitrocéramique lithié et procédé de réalisation. | |
Saenger et al. | Lead zirconate titanate films produced by pulsed laser deposition | |
US10283691B2 (en) | Nano-composite thermo-electric energy converter and fabrication method thereof | |
JP2688872B2 (ja) | Pzt薄膜の作製方法及びスパッタリング装置 | |
JPH0158842B2 (fr) | ||
JPS61191954A (ja) | スズ酸化物薄膜ガスセンサ素子 | |
JP6115823B2 (ja) | サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ | |
JPS605233B2 (ja) | 高融点化合物薄膜の製造方法 | |
JP2015043410A (ja) | サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ | |
JPS6052562B2 (ja) | SiCサ−ミスタ素材及びSiCサ−ミスタの製造方法 | |
JP6319568B2 (ja) | サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ | |
US3382100A (en) | Rhenium thin film resistors | |
JP3428053B2 (ja) | 酸化物超電導テープ製造用加熱ヒータおよび酸化物超電導テープの製造方法 | |
JP3761055B2 (ja) | 石英ガラス黒色板状体 | |
JPH03174307A (ja) | 酸化物超電導体の製造方法 | |
JPH029450B2 (fr) | ||
JPH05263219A (ja) | セレン化銅インジウム薄膜の製造方法 | |
JPS59113174A (ja) | 薄膜形成方法および薄膜形成装置 | |
JPS62205267A (ja) | 酸化アルミニウム膜の製造方法 | |
JP3136764B2 (ja) | カルコパイライト薄膜の製造方法 | |
JP2951727B2 (ja) | 温度センサ素子とそれを有する温度センサおよび温度センサ素子の製造方法 | |
JP6115824B2 (ja) | サーミスタ用金属窒化物材料及びその製造方法並びにサーミスタセンサ | |
KR20120117587A (ko) | Se 저온 증착 열처리에 의한 CI(G)S 박막의 제조 방법 | |
JPH0544021A (ja) | 真空蒸着用kセル |