JPH0157505B2 - - Google Patents
Info
- Publication number
- JPH0157505B2 JPH0157505B2 JP55004277A JP427780A JPH0157505B2 JP H0157505 B2 JPH0157505 B2 JP H0157505B2 JP 55004277 A JP55004277 A JP 55004277A JP 427780 A JP427780 A JP 427780A JP H0157505 B2 JPH0157505 B2 JP H0157505B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- base
- emitter
- resistance
- stage transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP427780A JPS56101772A (en) | 1980-01-17 | 1980-01-17 | Darlington transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP427780A JPS56101772A (en) | 1980-01-17 | 1980-01-17 | Darlington transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56101772A JPS56101772A (en) | 1981-08-14 |
| JPH0157505B2 true JPH0157505B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-12-06 |
Family
ID=11580038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP427780A Granted JPS56101772A (en) | 1980-01-17 | 1980-01-17 | Darlington transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56101772A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104165A (ja) * | 1982-12-06 | 1984-06-15 | Mitsubishi Electric Corp | 電力用トランジスタ |
-
1980
- 1980-01-17 JP JP427780A patent/JPS56101772A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56101772A (en) | 1981-08-14 |