JPH0154862B2 - - Google Patents

Info

Publication number
JPH0154862B2
JPH0154862B2 JP59166704A JP16670484A JPH0154862B2 JP H0154862 B2 JPH0154862 B2 JP H0154862B2 JP 59166704 A JP59166704 A JP 59166704A JP 16670484 A JP16670484 A JP 16670484A JP H0154862 B2 JPH0154862 B2 JP H0154862B2
Authority
JP
Japan
Prior art keywords
electronic circuit
lead
frame
substrate
metal powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59166704A
Other languages
Japanese (ja)
Other versions
JPS6143460A (en
Inventor
Eiji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59166704A priority Critical patent/JPS6143460A/en
Publication of JPS6143460A publication Critical patent/JPS6143460A/en
Publication of JPH0154862B2 publication Critical patent/JPH0154862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/4952—Additional leads the additional leads being a bump or a wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

PURPOSE:To contrive to prevent the electronic circuit of the titled device from shorting-circuit by a method wherein, when a microspot welding is performed on the lead wires from the substrate and the internal connecting parts of the external lead-out terminals, the scattering of fused metal powder to the lower direction is stopped on the shielding part and it is eliminated for the fused metal powder to scatter and stick to the wiring of the electronic circuit of the substrate, which is located in the lower direction of the connecting parts. CONSTITUTION:The base part of a frame 11 consisting of a molded object of synthetic resin and so forth is fitted into an integrated circuit substrate 1 and the base part is fixed with a bonding agent 3. External lead-out terminals 4 are led out penetrating one side part of this frame 11. A lead wire 5 is junctioned at each terminal part 1a of the electronic circuit of the substrate with a solder 6 and rises. A microspot welding is performed on the internal connecting parts 4a of the terminals 4 and the point parts 5a of the lead wires 5. In this case, by providing a shielding plate part 11a, which is protruded out in one body from the inner surface of the one side surface of the frame 11, this plate part 11a is made to protrude to the lower position of the connecting parts 4a and covers the wiring of the electronic circuit, which is located in the lower direction of the lower position. By this way, the scattering of fused metal powder to the lower direction, which is caused by the microspot welding, can be stopped on the plate part 11a.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、混成集積回路基板をフレーム下部
に固着し、基板からのリード線とフレームの外部
引出端子部とを内部で溶接接続した混成集積回路
装置に関する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention provides a hybrid integrated circuit in which a hybrid integrated circuit board is fixed to the lower part of a frame, and lead wires from the board and external lead terminals of the frame are internally connected by welding. Regarding equipment.

〔従来技術〕[Prior art]

従来のこの種の混成集積回路装置は、第１図に
縦断面図で示すようになつている。１は混成集積
回路基板（以下「基板」と称する）、２は合成樹
脂成形品などからなるフレームで、底部に基板１
をはめ込み接着剤３で固着している。４はフレー
ム２の側部を貫通し固着して出された外部引出端
子、５は基板１の電子回路（図示は略す）の端子
部１ａにはんだ６により接合され立上つたリード
線である。外部引出端子４の内部接続部４ａに、
リード線５の先端部５ａをマイクロスボツト溶接
により接続している。７はフレーム２上に接着さ
れ密封するカバーである。 A conventional hybrid integrated circuit device of this type is shown in a longitudinal sectional view in FIG. 1 is a hybrid integrated circuit board (hereinafter referred to as "substrate"), 2 is a frame made of a synthetic resin molded product, etc., with the board 1 on the bottom.
Insert and secure with adhesive 3. Reference numeral 4 designates an external lead-out terminal that penetrates through the side of the frame 2 and is fixed thereto, and reference numeral 5 designates a rising lead wire that is joined to the terminal portion 1a of the electronic circuit (not shown) of the board 1 by solder 6. In the internal connection part 4a of the external extraction terminal 4,
The tips 5a of the lead wires 5 are connected by microbot welding. 7 is a cover adhered onto the frame 2 to seal it.

上記従来の混成集積回路装置は、電子回路から
のリード線５と外部引出端子４との接続点が電子
回路上に位置しており、双方をマイクロスポツト
溶接したとき、溶融金属粉が飛散し電子回路の配
線間に付着し、短絡することがあり、品質上不具
合が生じていた。 In the conventional hybrid integrated circuit device described above, the connection point between the lead wire 5 from the electronic circuit and the external extraction terminal 4 is located on the electronic circuit, and when the two are micro-spot welded, molten metal powder is scattered and the electronic It could adhere between circuit wires and cause short circuits, causing quality problems.

（発明の概要〕 この発明は、フレームから出された外部引出端
子の内部接続部の下方位置に、フレームの側部内
面から遮へい板部を内方へ延ばし、基板からのリ
ード線と外部引出端子の内部接続部とのスポツト
溶接による溶融金属粉の下方への飛散を、遮へい
板部上に受止め、下方の基板の電子回路配線への
飛散付着をなくし、短絡を防止した信頼度の高い
混成集積回路装置を提供することを目的としてい
る。(Summary of the Invention) This invention provides a shielding plate portion extending inward from the inner surface of the side of the frame at a position below the internal connection portion of the external lead-out terminal extended from the frame, and a shielding plate portion extending inward from the inner surface of the side part of the frame to connect the lead wire from the board and the external lead-out terminal. A highly reliable composite that catches the downward scattering of molten metal powder caused by spot welding with the internal connection part of the board on the shield plate, eliminates scattering and adhesion to the electronic circuit wiring of the lower board, and prevents short circuits. The purpose is to provide integrated circuit devices.

〔発明の実施例〕[Embodiments of the invention]

第２図及び第３図はこの発明の一実施例による
混成集積回路装置の縦断面図及び平面図であり、
１，３〜７，１ａ，４ａ，５ａは上記従来装置と
同一のものである。１１は合成樹脂成形品などか
らなるフレーム、１１ａはこのフレームの側部内
面から一体に出された遮へい板部で、外部引出端
子４の接続部４ａの下方位置に突出し、下方の基
板１の電子回路配線部を覆つている。基板１から
のリード線５の先端部５ａと外部引出端子４の接
続部４ａとのマイクロスポツト溶接による溶融金
属粉の下方への飛散を、遮へい板部１１上に受止
める。これにより、下方の基板１の電子回路配線
部に溶融金属粉が飛散付着することが防止され
る。 2 and 3 are a longitudinal sectional view and a plan view of a hybrid integrated circuit device according to an embodiment of the present invention,
1, 3 to 7, 1a, 4a, and 5a are the same as those in the conventional device. 11 is a frame made of a synthetic resin molded product, etc.; 11a is a shielding plate portion integrally protruded from the side inner surface of this frame, which protrudes below the connection portion 4a of the external lead terminal 4; Covers the circuit wiring section. The downward scattering of molten metal powder due to micro spot welding between the tip end 5a of the lead wire 5 from the substrate 1 and the connection part 4a of the external lead terminal 4 is caught on the shielding plate part 11. This prevents molten metal powder from scattering and adhering to the electronic circuit wiring portion of the substrate 1 below.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、外部引出端
子の内部接続部の下方位置に、フレームの側部内
面から遮へい板部を突出して設けたので、基板か
らのリード線と外部引出端子の内部接続部との溶
接による溶融金属粉の下方への飛散が、遮へい板
部上に受止められ、下方の基板の電子回路配線へ
の飛散付着がなくなり短絡が防止され、品質が向
上される。 As described above, according to the present invention, since the shielding plate part is provided below the internal connection part of the external lead-out terminal and protrudes from the inner surface of the side part of the frame, the lead wire from the board and the inside of the external lead-out terminal are provided. The downward scattering of molten metal powder due to welding with the connection part is caught on the shield plate part, and the scattering and adhesion to the electronic circuit wiring of the lower board is eliminated, short circuits are prevented, and quality is improved.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の混成集積回路装置の縦断面図、
第２図及び第３図はこの発明の一実施例による混
成集積回路装置の縦断面図及び平面図である。 １……混成集積回路基板、４……外部引出端
子、４ａ……接続部、５……リード線、５ａ……
先端部、１１……フレーム、１１ａ……遮へい板
部。なお、図中同一符号は同一又は相当部分を示
す。 Figure 1 is a vertical cross-sectional view of a conventional hybrid integrated circuit device.
2 and 3 are a vertical sectional view and a plan view of a hybrid integrated circuit device according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...Mixed integrated circuit board, 4...External extraction terminal, 4a...Connection part, 5...Lead wire, 5a...
Tip part, 11...frame, 11a...shielding plate part. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] １ 上面の電子回路の端子部にリード線が接合さ
れて上方に延ばされた混成集積回路基板、この基
板を下部に固着し上部が開口しており、外部引出
端子が側部を貫通して出されたフレーム、及びこ
のフレームの上部側部内面から一体に内方に延ば
され、上記外部引出端子の内部接続部の下方位置
に突出し、下方の上記基板の電子回路配線部を覆
う遮へい板部を備え、上記リード線の先端部と上
記外部引出端子の内部接続部との溶接による溶融
金属粉の下方への飛散を、上記遮へい板部により
受止めたことを特徴とする混成集積回路装置。1 A hybrid integrated circuit board with lead wires connected to the terminals of the electronic circuit on the top surface and extended upwards, with this board fixed to the bottom and open at the top, with external lead-out terminals penetrating the sides. A shielding plate that integrally extends inward from the inner surface of the upper side of the extended frame, protrudes below the internal connection portion of the external lead-out terminal, and covers the electronic circuit wiring portion of the substrate below. a hybrid integrated circuit device, wherein the shielding plate portion catches downward scattering of molten metal powder due to welding between the tip of the lead wire and the internal connection portion of the external extraction terminal. .
JP59166704A 1984-08-07 1984-08-07 Hybrid integrated circuit device Granted JPS6143460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59166704A JPS6143460A (en) 1984-08-07 1984-08-07 Hybrid integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59166704A JPS6143460A (en) 1984-08-07 1984-08-07 Hybrid integrated circuit device

Publications (2)

Publication Number Publication Date
JPS6143460A JPS6143460A (en) 1986-03-03
JPH0154862B2 true JPH0154862B2 (en) 1989-11-21

Family

ID=15836208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59166704A Granted JPS6143460A (en) 1984-08-07 1984-08-07 Hybrid integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6143460A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295481A (en) * 1988-05-24 1989-11-29 Toshiba Corp Lead connecting method
JP2532665B2 (en) * 1989-06-14 1996-09-11 シーケーディ株式会社 Reed blade position detection device in reeding machine
JPH09137342A (en) * 1995-11-10 1997-05-27 Hashizume Kenkyusho:Kk Method for drawing warp in reed and high-precision reed drawing-in machine therefor

Also Published As

Publication number Publication date
JPS6143460A (en) 1986-03-03

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